Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division 1N6281A-E3/51

Part No.:
1N6281A-E3/51
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-201AA, DO-27, Axial
Datasheet:
Aetrix1N6281A-E3/51.pdf
Description:
TVS DIODE 23.1VWM 37.5VC 1.5KE
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,826

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

1N6281A-E3/51 from Vishay General Semiconductor is a unidirectional Transient Voltage Suppressor (TVS) diode designed for primary overvoltage protection in power rails and signal lines. It features a 27 V breakdown voltage (VBR min/max: 25.7–28.4 V), 23.1 V stand-off voltage (VWM), 37.5 V clamping voltage (VC) at 40 A peak pulse current, 1500 W peak pulse power (10/1000 µs), and operates across –55 °C to +175 °C junction temperature. It protects MOSFETs and ICs against inductive switching transients in industrial power supplies.

For engineers reviewing the 1N6281A-E3/51 datasheet, 1N6281A-E3/51 pinout, 1N6281A-E3/51 application, or 1N6281A-E3/51 equivalent, this page delivers verified electrical parameters, JEDEC 1.5KE package details, clamping performance under standardized surge waveforms, thermal derating behavior, and direct alternatives for circuit protection redesigns.

Technical Context

This unidirectional TVS diode uses a glass-passivated silicon junction optimized for fast transient response (<1 ns) and low incremental surge resistance. Its clamping action begins at 25.7 V and limits voltage to ≤37.5 V under 40 A 10/1000 µs pulses, enabling robust protection of 24 V DC systems without false triggering during normal operation.

The device complies with JEDEC standard 1.5KE case outline, supports 200 A non-repetitive forward surge (8.3 ms half-sine), and exhibits 0.096 %/°C temperature coefficient of VBR. It is RoHS-compliant (E3 suffix), commercial-grade, and rated for 6.5 W steady-state power dissipation at TL = 75 °C.

Key Specifications

Parameter Value and Actual Design Meaning
VBR (min/max) 25.7 V / 28.4 V - Ensures reliable conduction onset above 24 V nominal rail while avoiding nuisance tripping during tolerance drift.
VWM 23.1 V - Maximum continuous reverse voltage before leakage exceeds 1 µA; compatible with 24 V system operating margins.
VC @ IPPM 37.5 V @ 40 A - Clamped voltage during 10/1000 µs surge; keeps protected ICs below absolute maximum ratings.
PPPM 1500 W - Peak pulse power handling per single 10/1000 µs transient; sufficient for IEC 61000-4-5 Level 4 surges.
IFSM 200 A - Non-repetitive forward surge rating (8.3 ms); supports high-energy inductive kickback events.
TJ max +175 °C - High-temperature junction rating enables use in under-hood automotive or enclosed industrial enclosures.
RθJA 75 °C/W - Thermal resistance from junction to ambient; informs heatsinking requirements for sustained power dissipation.

Pinout & Package

Package: JEDEC 1.5KE molded epoxy case (Case Style 1.5KE), axial-leaded, RoHS-compliant matte tin-plated leads. Cathode indicated by color band.

Pin/Terminal Circuit Role Design Meaning
Anode Forward current entry / Reverse surge return path Connected to ground or lower-potential node in unidirectional clamp configuration.
Cathode Clamping output / Surge current sink Connected to protected line (e.g., 24 V rail); conducts surge current to anode when VAK ≥ VBR.

Key Features

Feature Design Value
Glass passivated junction Enables stable VBR and low leakage (<1 µA at VWM) over lifetime and temperature cycling.
1500 W peak pulse power (10/1000 µs) Meets IEC 61000-4-5 surge immunity requirements for industrial equipment up to Level 4 (4 kV line-earth).
Fast response time (<1 ns) Clamps transients before sensitive downstream components experience overvoltage stress.
Low incremental surge resistance Minimizes VC overshoot during high di/dt events, improving clamping precision.
AEC-Q101 qualified variants available HE3 suffix versions support automotive applications; 1N6281A-E3/51 is commercial grade only.

Applications

Industrial Power Supply Protection Automotive Body Control Module (BCM)

Use Scenario: Protecting 24 V input rails in programmable logic controllers (PLCs) against relay coil flyback and load dump.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between 24 V rail and chassis ground to shunt inductive energy within nanoseconds.

Use Value: Limits transient voltage to ≤37.5 V, preventing damage to DC-DC controllers and microcontrollers rated for 40 V absolute max.

Use Scenario: Safeguarding LIN bus transceivers and sensor inputs in BCMs exposed to battery load dump (ISO 7637-2 Pulse 5a).

IC Role / Device Role / Timing Role: Standoff-rated TVS on 12 V supply line clamps surges before they reach analog front-end ICs.

Use Value: Withstands 200 A surge (8.3 ms) and maintains <1 µA leakage at 13.5 V, ensuring low quiescent current compliance.

Telecom Remote Terminal Unit (RTU) Consumer Appliance Motor Drive

Use Scenario: Shielding RS-485 interface power pins in outdoor RTUs subjected to lightning-induced surges on long cable runs.

IC Role / Device Role / Timing Role: Primary protection stage upstream of polymeric PTC and secondary TVS, absorbing bulk surge energy.

Use Value: 1500 W rating handles multi-kV induced transients; 175 °C TJ rating ensures reliability in unventilated enclosures.

Use Scenario: Clamping back-EMF from brushed DC motors in washing machine control boards during commutation.

IC Role / Device Role / Timing Role: Unidirectional suppressor across motor terminals, referenced to main 24 V supply rail.

Use Value: Fast clamping prevents voltage spikes >40 V from reaching H-bridge gate drivers, reducing MOSFET failure risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ28A DO-214AA package, 28 V VBR, 45.4 V VC @ 33.1 A, 600 W PPPM Lower peak power and higher clamping voltage; suited for space-constrained PCBs where 1500 W is not required. Select SMBJ28A when board area is limited and surge threat level is ≤IEC 61000-4-5 Level 3.
1.5KE27A Same 1.5KE package, identical VBR/VWM/VC specs, E3 suffix but different reel packaging (e.g., -E3/54) No functional difference; differs only in tape-and-reel configuration (54 vs. 51) and traceability coding. 1.5KE27A is functionally identical and interchangeable with 1N6281A-E3/51 in all electrical and mechanical respects.

Compared with 1N6281A-E3/51, SMBJ28A offers smaller footprint but reduced surge capacity and higher clamping, while 1.5KE27A provides identical protection performance with alternate packaging-making it a drop-in replacement where reel logistics permit.

Availability

1N6281A-E3/51 is available at Aetrix Electronics and suitable for industrial power supplies, automotive body electronics, telecom remote terminal units, and consumer appliance motor drives requiring stable component supply and long-term obsolescence management.

Supply support for 1N6281A-E3/51 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability and ruggedness.

The 1N6281A-E3/51 belongs to Vishay's TRANSZORB® TVS family, engineered specifically for high-energy transient suppression in harsh environments including industrial automation and transportation systems.

FAQ

What is the breakdown voltage range of the 1N6281A-E3/51?

The 1N6281A-E3/51 has a guaranteed breakdown voltage (VBR) range of 25.7 V to 28.4 V at 1.0 mA test current. This specification ensures consistent clamping onset across manufacturing lots and temperature extremes, critical for predictable protection in 24 V systems. The 1N6281A-E3/51 meets JEDEC 1.5KE standards and is validated per Vishay Document 88301.

Is the 1N6281A-E3/51 bidirectional or unidirectional?

The 1N6281A-E3/51 is a unidirectional TVS diode, indicated by the "A" suffix and presence of a cathode band. It conducts only in reverse bias above VBR and blocks forward current up to 3.5 V at 100 A. Bidirectional variants (e.g., 1N6281CA) exist but are distinct part numbers; the 1N6281A-E3/51 must be used in polarity-aware layouts with correct anode/cathode orientation.

What is the clamping voltage of the 1N6281A-E3/51 under surge conditions?

The 1N6281A-E3/51 clamps to a maximum of 37.5 V at 40 A peak pulse current using the standardized 10/1000 µs waveform. This value reflects worst-case VC under full-rated surge, ensuring protected circuits remain within safe operating limits. The 1N6281A-E3/51 achieves this with low dynamic impedance, verified in Vishay's Fig. 7 and Table on page 2 of Document 88301.

Can the 1N6281A-E3/51 replace the 1.5KE27A in a design?

Yes-the 1N6281A-E3/51 and 1.5KE27A are electrically and mechanically identical, sharing the same 1.5KE package, VBR, VWM, VC, and thermal specifications. The difference lies solely in part numbering convention and reel packaging (e.g., /51 vs. /54). The 1N6281A-E3/51 functions as a direct replacement for 1.5KE27A in all circuit implementations.

What is the maximum operating temperature for the 1N6281A-E3/51?

The 1N6281A-E3/51 has a maximum junction temperature (TJ) rating of +175 °C and operates from –55 °C to +175 °C. This wide range supports deployment in high-ambient environments such as engine compartments or sealed industrial enclosures. Derating curves in Vishay Document 88301 Fig. 2 and Fig. 5 define safe power limits above 25 °C ambient.

1N6281A-E3/51 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-201AA, DO-27, Axial
Series:
TransZorb®
Packaging:
Bulk
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
23.1V
Voltage - Breakdown (Min):
25.7V
Voltage - Clamping (Max) @ Ipp:
37.5V
Current - Peak Pulse (10/1000µs):
40A
Power - Peak Pulse:
1500W (1.5kW)
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
1.5KE

1N6281A-E3/51 FAQ

1.How can I place an order for 1N6281A-E3/51 through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N6281A-E3/51 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N6281A-E3/51 reliable?

The price and inventory of 1N6281A-E3/51 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6281A-E3/51 is usually 5 days.

3.What payment methods are accepted for 1N6281A-E3/51?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6281A-E3/51 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N6281A-E3/51?

1N6281A-E3/51 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N6281A-E3/51 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N6281A-E3/51?

For technical support, including 1N6281A-E3/51 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6281A-E3/51 requirements.

6.How does Aetrix verify that 1N6281A-E3/51 is sourced from the original manufacturer or authorized distributors?

All 1N6281A-E3/51 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6281A-E3/51 meets industry standards.

7.What is the process for return or replacement of 1N6281A-E3/51?

All 1N6281A-E3/51 units undergo pre-shipment inspection (PSI). If there is an issue with 1N6281A-E3/51, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N6281A-E3/51 part is unused and in its original packaging.

Return procedure for 1N6281A-E3/51:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

1N6281A-E3/51 Tags

  • 1N6281A-E3/51
  • 1N6281A-E3/51 PDF
  • 1N6281A-E3/51 Datasheet
  • 1N6281A-E3/51 Specifications
  • 1N6281A-E3/51 Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division 1N6281A-E3/51
  • Buy 1N6281A-E3/51
  • 1N6281A-E3/51 Price
  • 1N6281A-E3/51 Distributor
  • 1N6281A-E3/51 Supplier
  • 1N6281A-E3/51 Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER