Vishay General Semiconductor - Diodes Division 1N6281AHE3_B/C
- Part No.:
- 1N6281AHE3_B/C
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-201AA, DO-27, Axial
- Datasheet:
-
1N6281AHE3_B/C.pdf
- Description:
- 1.5KW,27V 5%,UNIDIR,AXIAL TVS
- Quantity:
- Payment:

- Shipping:

Inventory:3,162
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Product details
Overview
1N6281AHE3_B/C from Vishay General Semiconductor is a unidirectional Transient Voltage Suppressor (TVS) diode designed for primary overvoltage protection in DC power rails and signal lines. It features a 27 V breakdown voltage (VBR = 25.7–28.4 V at 1.0 mA), 1500 W peak pulse power rating (10/1000 µs), clamping voltage of 37.5 V at 40.0 A, and operates across -55 °C to +175 °C junction temperature range - used in automotive power supply input stages and industrial sensor interface protection.
For engineers reviewing the 1N6281AHE3_B/C datasheet, 1N6281AHE3_B/C pinout, 1N6281AHE3_B/C application, or 1N6281AHE3_B/C equivalent, key selection criteria include verified unidirectional polarity, AEC-Q101 qualification (per HE3 suffix), 1.5KE package thermal resistance (RθJL = 15.4 °C/W), and compliance with UL 497B surge protector classification.
Technical Context
This TVS diode employs a glass-passivated silicon junction optimized for fast transient response (<1 ns) and low incremental surge resistance. Its clamping behavior is defined by a 10/1000 µs waveform test condition, with derating above 25 °C per Fig. 2 and thermal resistance from junction to lead fixed at 15.4 °C/W.
The device supports unidirectional operation only (cathode marked by color band), delivers 37.5 V clamping at 40.0 A peak pulse current, and maintains 23.1 V stand-off voltage (VWM) with ≤1.0 µA reverse leakage - enabling reliable hold-off during normal operation while triggering rapidly under ESD or lightning-induced surges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 25.7 V / 28.4 V at 1.0 mA - defines precise breakdown threshold for predictable turn-on during transients |
| VWM | 23.1 V - maximum continuous working voltage before leakage exceeds 1.0 µA |
| VC @ IPPM | 37.5 V at 40.0 A - clamping voltage limiting downstream component stress during 1500 W surge |
| PPPM | 1500 W - peak pulse power handling capability with 10/1000 µs waveform, 0.01 % duty cycle |
| TJ max. | +175 °C - enables use in under-hood automotive environments without thermal derating penalties |
| RθJL | 15.4 °C/W - low junction-to-lead thermal resistance supports high-reliability soldering and power dissipation |
| AEC-Q101 | Qualified - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing |
Pinout & Package
1N6281AHE3_B/C uses the industry-standard Case Style 1.5KE molded epoxy package (DO-201AD), with axial leads and cathode indicated by a color band. The device has two terminals: anode and cathode - no internal circuitry or multi-pin configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point in forward bias | Connected to lower-potential side of protected line; must be routed with low-inductance path for effective clamping |
| Cathode | Current exit point in forward bias; marked with color band | Connected to higher-potential rail (e.g., VCC or signal reference); determines unidirectional conduction direction |
Key Features
| Feature | Design Value |
|---|---|
| Glass passivated junction | Enables stable VBR tolerance and long-term reliability under thermal cycling and humidity exposure |
| 1500 W peak pulse power | Withstands IEC 61000-4-5 Level 4 surges (4 kV line-to-earth) without degradation when properly mounted |
| AEC-Q101 qualified (HE3 suffix) | Validated for automotive powertrain and body electronics applications requiring zero defect field performance |
| UL 497B recognized | Approved as a surge protector component for telecom and industrial equipment meeting safety-critical isolation requirements |
| Matte tin-plated leads | Ensures solderability per J-STD-002 and JESD 22-B102, with JESD 201 Class 2 whisker resistance |
Applications
| Automotive Power Input Protection | Industrial Sensor Signal Line Protection |
|---|---|
Use Scenario: Protecting 24 V battery-fed ECUs against load dump transients up to 120 V and ISO 7637-2 Pulse 5a. IC Role / Device Role / Timing Role: Primary shunt clamp placed between VBAT and ground, absorbing energy before it reaches LDOs or microcontrollers. Use Value: Limits voltage seen by downstream ICs to ≤37.5 V during 1500 W surges, preventing latch-up or gate oxide rupture in 3.3 V/5 V logic. | Use Scenario: Safeguarding 4–20 mA current loop transmitters connected to field-mounted pressure/temperature sensors. IC Role / Device Role / Timing Role: Unidirectional TVS on signal return path, clamping induced surges from nearby motor switching or lightning coupling. Use Value: Maintains <1.0 µA leakage at 23.1 V operating voltage, preserving loop accuracy while responding in <1 ns to >1 kV transients. |
| Telecom DC Power Feeds | Consumer Appliance Motor Drive Inputs |
Use Scenario: Overvoltage protection on -48 V DC distribution boards in central office equipment exposed to AC mains coupling. IC Role / Device Role / Timing Role: Standoff-rated TVS on feed line input, conducting only during surge events exceeding 23.1 V. Use Value: Withstands repetitive 10/1000 µs surges at 0.01 % duty cycle without parameter drift, supporting 20+ year telecom infrastructure lifetimes. | Use Scenario: Input-stage protection for BLDC motor controllers in washing machines subjected to relay contact bounce and inductive kickback. IC Role / Device Role / Timing Role: Clamp across bridge rectifier output, diverting stored inductor energy away from gate drivers and MCU power pins. Use Value: Delivers 40.0 A peak pulse current capacity at 37.5 V clamping, reducing MOSFET avalanche stress and improving system MTBF. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ28A | Lower PPPM (600 W), smaller SMB package (RθJL = 25 °C/W), same VBR range (26.6–29.4 V) | Not AEC-Q101 qualified; limited to commercial-grade consumer/industrial use | Select when board space is constrained and automotive qualification is not required |
| 1.5KE27AHE3_A | Same electrical specs and 1.5KE package, but HE3_A revision lacks documented AEC-Q101 validation per datasheet note (2) | Acceptable for non-automotive industrial designs where full AEC-Q101 traceability is not mandated | Choose only if cost sensitivity outweighs need for certified automotive reliability |
Compared with SMBJ28A and 1.5KE27AHE3_A, the 1N6281AHE3_B/C provides verified AEC-Q101 qualification, superior thermal performance (RθJL = 15.4 °C/W), and UL 497B recognition - making it the preferred choice for safety-critical automotive and telecom infrastructure applications demanding long-term surge immunity.
Availability
1N6281AHE3_B/C is available at Aetrix Electronics and suitable for automotive ECU power inputs, industrial 4–20 mA sensor interfaces, and telecom -48 V DC distribution systems requiring stable component supply across extended production lifecycles.
Supply support for 1N6281AHE3_B/C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The 1N6281AHE3_B/C belongs to Vishay's TRANSZORB® TVS family, engineered specifically for robust, standardized overvoltage protection in harsh environments where fast response, high surge capacity, and long-term stability are mandatory.
FAQ
What is the breakdown voltage tolerance of the 1N6281AHE3_B/C?
The 1N6281AHE3_B/C has a specified breakdown voltage range of 25.7 V to 28.4 V at 1.0 mA test current, representing ±5 % tolerance around the nominal 27 V rating. This tight VBR window ensures consistent clamping behavior across production lots and supports precise system-level surge margining in designs such as automotive power modules where overvoltage thresholds must be tightly controlled.
Is the 1N6281AHE3_B/C bidirectional or unidirectional?
The 1N6281AHE3_B/C is a unidirectional TVS diode, as confirmed by its part number suffix "A" (not "CA") and explicit documentation stating bidirectional types begin at 1.5KE6.8CA and end at 1.5KE220CA. Its cathode is marked with a color band, and it conducts only when the cathode is at higher potential than the anode - making it suitable for DC rail protection where polarity is fixed.
Does the 1N6281AHE3_B/C meet automotive reliability standards?
Yes, the 1N6281AHE3_B/C carries the HE3 suffix, which per Vishay Document 88301 Note (2) indicates AEC-Q101 qualification for the 1.5KE6.8AHE3_B to 1.5KE220AHE3_B series. This includes stress testing for high-temperature reverse bias, temperature cycling, and mechanical shock - validating its suitability for under-hood and chassis-mounted automotive electronics.
What is the clamping voltage of the 1N6281AHE3_B/C at rated peak pulse current?
The 1N6281AHE3_B/C clamps to 37.5 V at its rated peak pulse current of 40.0 A (10/1000 µs waveform). This value is measured per standard test conditions and represents the maximum voltage imposed on protected circuitry during worst-case surge events - critical for ensuring downstream components like 3.3 V microcontrollers or 5 V analog front-ends remain within absolute maximum ratings.
Can the 1N6281AHE3_B/C be used in parallel for higher surge current handling?
While the 1N6281AHE3_B/C datasheet notes TVS diodes "can be used in series or parallel to increase peak power ratings," parallel operation requires careful matching of VBR and dynamic impedance to ensure current sharing. For the 1N6281AHE3_B/C, mismatched units may cause one device to absorb disproportionate energy and fail prematurely; Vishay recommends using a single higher-rated device (e.g., 1.5KE33A) instead of paralleling 1N6281AHE3_B/C units unless matched binning and layout symmetry are implemented.
1N6281AHE3_B/C Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-201AA, DO-27, Axial
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 23.1V
- Voltage - Breakdown (Min):
- 25.7V
- Voltage - Clamping (Max) @ Ipp:
- 37.5V
- Current - Peak Pulse (10/1000µs):
- 40A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 1.5KE
1N6281AHE3_B/C FAQ
1.How can I place an order for 1N6281AHE3_B/C through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6281AHE3_B/C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6281AHE3_B/C reliable?
The price and inventory of 1N6281AHE3_B/C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6281AHE3_B/C is usually 5 days.
3.What payment methods are accepted for 1N6281AHE3_B/C?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6281AHE3_B/C transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6281AHE3_B/C?
1N6281AHE3_B/C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6281AHE3_B/C order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6281AHE3_B/C?
For technical support, including 1N6281AHE3_B/C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6281AHE3_B/C requirements.
6.How does Aetrix verify that 1N6281AHE3_B/C is sourced from the original manufacturer or authorized distributors?
All 1N6281AHE3_B/C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6281AHE3_B/C meets industry standards.
7.What is the process for return or replacement of 1N6281AHE3_B/C?
All 1N6281AHE3_B/C units undergo pre-shipment inspection (PSI). If there is an issue with 1N6281AHE3_B/C, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6281AHE3_B/C part is unused and in its original packaging.
Return procedure for 1N6281AHE3_B/C:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6281AHE3_B/C Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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