Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division 1N6283AHE3/51

Part No.:
1N6283AHE3/51
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-201AA, DO-27, Axial
Datasheet:
Aetrix1N6283AHE3/51.pdf
Description:
TVS DIODE 28.2VWM 45.7VC 1.5KE
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,370

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

1N6283AHE3/51 from Vishay General Semiconductor is a uni-directional Transient Voltage Suppressor (TVS) diode designed for primary overvoltage protection in DC power rails and signal lines. It features a 31.4 V to 34.7 V breakdown voltage range at 1 mA, 28.2 V stand-off voltage, 1.5 kW peak pulse power (10/1000 µs), 32.8 A maximum peak pulse current, and clamps transients to ≤45.7 V. It is used in automotive power supply inputs and industrial sensor interface circuits.

For engineers reviewing the 1N6283AHE3/51 datasheet, 1N6283AHE3/51 pinout, 1N6283AHE3/51 application, or 1N6283AHE3/51 equivalent, this page provides verified electrical parameters, AEC-Q101 qualification status, thermal resistance data, clamping behavior under surge conditions, and direct alternative part comparisons for ESD and lightning transient protection design.

Technical Context

This TVS diode operates as a voltage-clamped shunt protector with glass-passivated junction technology and fast sub-nanosecond response time. Its uni-directional polarity enables integration into DC-biased circuits where reverse conduction must be blocked until breakdown occurs.

The device delivers 1500 W peak pulse power handling per 10/1000 µs waveform with 0.01% duty cycle, and exhibits low incremental surge resistance for stable clamping performance across repetitive surges. It is rated for operation from –55 °C to +175 °C junction temperature and qualified to AEC-Q101 for automotive under-hood applications.

Key Specifications

Parameter Value and Actual Design Meaning
Breakdown Voltage VBR 31.4 V min / 34.7 V max at 1 mA - defines precise clamping onset threshold for overvoltage detection
Stand-off Voltage VWM 28.2 V - maximum continuous reverse working voltage before leakage exceeds 1 µA
Peak Pulse Power PPPM 1500 W (10/1000 µs) - sustains single high-energy transients without failure in automotive load-dump scenarios
Clamping Voltage VC ≤45.7 V at 32.8 A IPPM - limits downstream IC voltage stress during surge events
Peak Pulse Current IPPM 32.8 A - quantifies maximum surge current the device can safely divert to ground
Junction Temperature Range –55 °C to +175 °C - supports under-hood automotive and industrial environments without derating
AEC-Q101 Qualified Yes - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing

Pinout & Package

Package: DO-201AD (Case Style 1.5KE), axial leaded, molded epoxy body with matte tin-plated leads compliant to J-STD-002 and JESD 22-B102. Cathode indicated by color band.

Pin/Terminal Circuit Role Design Meaning
Anode Current entry point in forward bias; connected to protected circuit ground or low-side return path Enables uni-directional clamping when cathode is tied to positive rail; blocks reverse current below VWM
Cathode Current exit point in forward bias; marked with color band; connected to protected line or supply rail Serves as the high-side connection point for clamping transients to ground; defines polarity-sensitive placement

Key Features

Feature Design Value
Glass passivated chip junction Ensures stable VBR tolerance and long-term reliability under thermal cycling and humidity exposure
1500 W peak pulse power (10/1000 µs) Handles automotive load dump (ISO 7637-2 Pulse 5a) and industrial switching surges without degradation
AEC-Q101 qualification Validates suitability for automotive powertrain, body control, and ADAS modules requiring zero-defect reliability
Low incremental surge resistance Maintains tight clamping window (VC – VBR = 12.5 V typical) across full IPPM range
RoHS-compliant HE3 suffix Meets JESD 201 Class 2 whisker resistance and UL 94 V-0 flammability for safety-critical PCBs

Applications

Automotive Power Input Protection Industrial Sensor Signal Line Protection

Use Scenario: Protecting 24 V battery-fed ECUs from ISO 7637-2 Pulse 5a load dump transients up to 120 V.

IC Role / Device Role / Timing Role: Shunt TVS placed between power rail and chassis ground to clamp overvoltage within 1 ns.

Use Value: Limits rail voltage to ≤45.7 V during 32.8 A surge, preventing damage to downstream DC/DC converters and microcontrollers.

Use Scenario: Safeguarding 4–20 mA analog sensor outputs against ESD and inductive kickback in factory automation systems.

IC Role / Device Role / Timing Role: Uni-directional TVS connected across signal and return lines to absorb ±8 kV contact ESD per IEC 61000-4-2.

Use Value: Clamps transients before they reach precision op-amps or ADC inputs, preserving measurement accuracy and avoiding latch-up.

Telecom DC Power Feeds Consumer Power Adapter Outputs

Use Scenario: Protecting PoE-powered equipment (IEEE 802.3af/at) from induced surges on 48 V DC input lines.

IC Role / Device Role / Timing Role: Primary-level TVS on input side of DC/DC converter to suppress common-mode transients from Ethernet cabling.

Use Value: Withstands 1500 W surges while maintaining <1 µA leakage at 28.2 V, ensuring no standby power loss.

Use Scenario: Adding secondary-side overvoltage protection on 5 V/12 V USB-C and wall adapter outputs.

IC Role / Device Role / Timing Role: Low-leakage uni-directional TVS placed after regulator to prevent output overvoltage from damaging connected devices.

Use Value: Provides fail-safe clamping at 45.7 V without affecting regulation stability or efficiency due to minimal capacitance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ33A Lower 600 W PPPM rating; SMA package (smaller footprint); 33 V nominal VBR (31.4–34.7 V same range); 5.0 V lower VC (40.7 V) Better suited for space-constrained consumer PCBs; not AEC-Q101 qualified; limited to commercial temperature range (–65 °C to +150 °C) Select SMBJ33A only for cost-sensitive, non-automotive designs where board area is critical and surge energy is ≤600 W.
1.5KE33A-E3/54 Same electrical specs and DO-201AD package; differs only in packaging (tape-and-reel vs. bulk/heatsink-mount variant); identical AEC-Q101 qualification No functional difference; used interchangeably in production where delivery format (reel vs. tube) drives logistics choice Choose 1.5KE33A-E3/54 if standard tape-and-reel delivery is required for SMT assembly; otherwise 1N6283AHE3/51 remains optimal for manual or selective soldering.

Compared with SMBJ33A, 1N6283AHE3/51 offers 2.5× higher surge power handling and automotive qualification; compared with 1.5KE33A-E3/54, it shares identical protection performance but uses HE3 suffix denoting enhanced whisker resistance and AEC-Q101 compliance traceability.

Availability

1N6283AHE3/51 is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor interfaces, telecom power feeds, and consumer power adapter outputs requiring stable component supply and long-term lifecycle support.

Supply support for 1N6283AHE3/51 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for automotive, industrial, and computing markets.

The 1N6283AHE3/51 belongs to Vishay's TRANSZORB® TVS family, engineered specifically for robust transient suppression in harsh environments where fast response, high energy absorption, and AEC-Q101 reliability are mandatory.

FAQ

What is the breakdown voltage tolerance of the 1N6283AHE3/51?

The 1N6283AHE3/51 has a specified breakdown voltage range of 31.4 V minimum to 34.7 V maximum at 1 mA test current. This ±5.2% tolerance ensures consistent clamping onset across production lots and supports reliable overvoltage detection in 24 V and 48 V systems without excessive margin overhead.

Is the 1N6283AHE3/51 suitable for automotive applications?

Yes, the 1N6283AHE3/51 is AEC-Q101 qualified and rated for junction temperatures from –55 °C to +175 °C. Its 1500 W peak pulse power and low clamping voltage make it appropriate for protecting automotive ECUs, body controllers, and ADAS sensors against load dump and ISO 16750-2 transients.

How does the clamping voltage of the 1N6283AHE3/51 compare to its breakdown voltage?

The 1N6283AHE3/51 clamps transients to ≤45.7 V at its rated 32.8 A peak pulse current, resulting in an incremental clamping voltage (VC – VBR) of approximately 12.5 V. This narrow spread ensures predictable voltage limiting and minimizes stress on downstream silicon during surge events.

What is the meaning of the HE3 suffix in 1N6283AHE3/51?

The HE3 suffix indicates RoHS-compliant construction with JESD 201 Class 2 whisker resistance, AEC-Q101 qualification, and UL 94 V-0 flammability-rated epoxy molding compound. It distinguishes this grade from commercial-only E3 variants and confirms suitability for automotive and industrial deployments.

Can the 1N6283AHE3/51 be used in bi-directional configurations?

No, the 1N6283AHE3/51 is strictly a uni-directional TVS diode, identified by its cathode band marking. For bi-directional protection, Vishay specifies the CA-suffixed variant (e.g., 1N6283CAHE3/51), which lacks polarity marking and clamps symmetrically in both directions.

1N6283AHE3/51 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-201AA, DO-27, Axial
Series:
TransZorb®
Packaging:
Bulk
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
28.2V
Voltage - Breakdown (Min):
31.4V
Voltage - Clamping (Max) @ Ipp:
45.7V
Current - Peak Pulse (10/1000µs):
32.8A
Power - Peak Pulse:
1500W (1.5kW)
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Through Hole
Supplier Device Package:
1.5KE

1N6283AHE3/51 FAQ

1.How can I place an order for 1N6283AHE3/51 through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N6283AHE3/51 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N6283AHE3/51 reliable?

The price and inventory of 1N6283AHE3/51 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6283AHE3/51 is usually 5 days.

3.What payment methods are accepted for 1N6283AHE3/51?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6283AHE3/51 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N6283AHE3/51?

1N6283AHE3/51 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N6283AHE3/51 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N6283AHE3/51?

For technical support, including 1N6283AHE3/51 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6283AHE3/51 requirements.

6.How does Aetrix verify that 1N6283AHE3/51 is sourced from the original manufacturer or authorized distributors?

All 1N6283AHE3/51 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6283AHE3/51 meets industry standards.

7.What is the process for return or replacement of 1N6283AHE3/51?

All 1N6283AHE3/51 units undergo pre-shipment inspection (PSI). If there is an issue with 1N6283AHE3/51, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N6283AHE3/51 part is unused and in its original packaging.

Return procedure for 1N6283AHE3/51:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

1N6283AHE3/51 Tags

  • 1N6283AHE3/51
  • 1N6283AHE3/51 PDF
  • 1N6283AHE3/51 Datasheet
  • 1N6283AHE3/51 Specifications
  • 1N6283AHE3/51 Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division 1N6283AHE3/51
  • Buy 1N6283AHE3/51
  • 1N6283AHE3/51 Price
  • 1N6283AHE3/51 Distributor
  • 1N6283AHE3/51 Supplier
  • 1N6283AHE3/51 Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER