Vishay General Semiconductor - Diodes Division 1N6283-E3/73
- Part No.:
- 1N6283-E3/73
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-201AA, DO-27, Axial
- Datasheet:
-
1N6283-E3/73.pdf
- Description:
- TVS DIODE 26.8VWM 47.7VC 1.5KE
- Quantity:
- Payment:

- Shipping:

Inventory:9,153
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N6283-E3/73 from Vishay General Semiconductor is a unidirectional Transient Voltage Suppressor (TVS) diode designed for primary overvoltage protection in DC power rails and signal lines. It features a 33 V breakdown voltage (VBR = 31.4–34.7 V at 1.0 mA), 28.2 V maximum working peak reverse voltage (VWM), 45.7 V clamping voltage (VC) at 32.8 A peak pulse current, and 1500 W peak pulse power rating with 10/1000 µs waveform - used to safeguard MOSFETs, ICs, and sensor interfaces in industrial and automotive electronics.
For engineers reviewing the 1N6283-E3/73 datasheet, 1N6283-E3/73 pinout, 1N6283-E3/73 application, or 1N6283-E3/73 equivalent, this part delivers verified transient suppression performance for 24 V and 32 V system rails, with RoHS-compliant matte tin-plated leads, JEDEC 1.5KE package, and AEC-Q101 qualification available in HE3 variants - critical for reliability-critical ESD and lightning surge protection design.
Technical Context
This unidirectional TVS diode operates as a voltage-clamped shunt protector: when transient voltage exceeds its 31.4–34.7 V breakdown threshold, it avalanches rapidly (<1 ns response) to divert surge current away from downstream components. Its 1500 W peak pulse power rating is defined under standardized 10/1000 µs waveform conditions with 0.01% duty cycle, and thermal performance is characterized by RθJA = 75 °C/W and RθJL = 15.4 °C/W.
The device exhibits low incremental surge resistance and excellent clamping ratio (VC/VWM ≈ 1.62), enabling effective protection of 28 V nominal systems. Its glass-passivated junction ensures stable leakage (<1.0 µA at VWM) and robustness against humidity and mechanical stress, while the molded epoxy case meets UL 94 V-0 flammability rating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 31.4 V / 34.7 V at 1.0 mA - defines precise avalanche initiation window for reliable overvoltage triggering |
| VWM | 28.2 V - maximum continuous reverse operating voltage; sets safe DC rail margin for 24–32 V systems |
| VC @ IPPM | 45.7 V at 32.8 A - clamping voltage during 10/1000 µs surge; determines protected circuit's maximum transient exposure |
| PPPM | 1500 W - peak pulse power handling capacity; enables single-device protection against IEC 61000-4-5 Level 4 surges |
| IPPM | 32.8 A - peak pulse current capability; supports >30 A surge events without degradation |
| Junction temp. range | –55 °C to +175 °C - wide operating envelope suitable for under-hood automotive and industrial environments |
| Leakage @ VWM | <1.0 µA - negligible standby power loss and no interference with high-impedance sensor biasing |
Pinout & Package
Package: JEDEC-standard 1.5KE molded epoxy case (Case Style 1.5KE), axial-leaded, RoHS-compliant matte tin-plated terminals. Cathode indicated by color band on body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference terminal | Connected to ground or lowest potential node; completes clamping path during reverse avalanche |
| Cathode (banded end) | High-side transient sensing node | Connected to protected line (e.g., 24 V rail); avalanche initiates when voltage exceeds VBR relative to anode |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Ensures long-term stability of VBR and leakage under thermal cycling and humidity stress |
| 1500 W peak pulse power (10/1000 µs) | Supports single-device compliance with IEC 61000-4-5 surge immunity up to 4 kV (line-earth) |
| Clamping voltage ≤45.7 V | Keeps protected ICs (e.g., CAN transceivers, microcontrollers) safely below absolute maximum ratings during transients |
| Response time <1 ns | Faster than MOVs or polymer-based protectors - prevents voltage overshoot before clamping engages |
| AEC-Q101 qualified variant available | Validated for automotive-grade reliability including temperature cycling, HAST, and mechanical shock |
Applications
| Industrial Motor Control | Automotive Body Control Module |
|---|---|
Use Scenario: Protection of 24 V DC supply rails feeding gate drivers and position sensors in servo drives. IC Role / Device Role / Timing Role: Shunt clamping element placed across input rail to clamp inductive switching spikes from contactor coils and relay back-EMF. Use Value: Limits transient excursions to ≤45.7 V, preventing latch-up or oxide rupture in 36 V-rated MOSFET drivers and Hall-effect sensors. |
Use Scenario: Surge protection on LIN bus lines and power inputs of door module ECUs exposed to load dump and jump-start events. IC Role / Device Role / Timing Role: Primary overvoltage clamp on 12 V/24 V auxiliary power inputs and bidirectional data lines. Use Value: Withstands repetitive 10/1000 µs surges up to 32.8 A while maintaining sub-1 µA leakage - preserving bus integrity and sleep-mode current budgets. |
| Telecom Power Supply Input | Consumer Appliance Mainboard |
Use Scenario: Input-stage protection for AC/DC adapters and PoE-powered equipment subjected to lightning-induced surges on AC mains or Ethernet cables. IC Role / Device Role / Timing Role: First-line defense upstream of bridge rectifier and bulk capacitor, absorbing energy before it reaches regulation circuitry. Use Value: 1500 W rating enables coordination with upstream fuses and varistors to achieve Class II/III surge immunity per IEC 61000-4-5 Ed. 3. |
Use Scenario: Protection of microcontroller I/O pins and display backlight drivers in washing machines and HVAC controllers exposed to ESD and relay noise. IC Role / Device Role / Timing Role: Localized point-of-use clamping on 5 V, 12 V, and 24 V internal rails and sensor interfaces. Use Value: Low clamping voltage (45.7 V) and fast response prevent damage to 5 V logic-level peripherals without requiring additional series impedance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ33A-E3/52 (Vishay) | Same VBR range (31.4–34.7 V), but SMC package (smaller footprint, lower PPPM = 600 W) | Lower power handling limits use to <1 kV IEC 61000-4-2 ESD or low-energy transients; unsuitable for 4 kV surge | Select when board space is constrained and surge threat level is limited to ESD or low-energy switching noise. |
| 1.5KE33A-E3/54 (Vishay) | Identical electrical specs and 1.5KE package; differs only in tape-and-reel packaging (54 vs. 73) and base quantity (1400 vs. 750 units) | No functional or application difference - fully interchangeable in circuit design and layout | Choose based on procurement logistics: 1N6283-E3/73 offers smaller reels (750 pcs) for prototyping and low-volume production. |
Compared with SMBJ33A-E3/52, the 1N6283-E3/73 provides 2.5× higher surge power margin for industrial surge immunity; compared with 1.5KE33A-E3/54, it offers identical protection performance with optimized reel size for flexible inventory management.
Availability
1N6283-E3/73 is available at Aetrix Electronics and suitable for industrial motor control, automotive body electronics, telecom power supplies, and consumer appliance designs requiring stable component supply and traceable RoHS-compliant sourcing.
Supply support for 1N6283-E3/73 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability, power efficiency, and ruggedized packaging.
The 1N6283-E3/73 belongs to Vishay's TRANSZORB® TVS family - engineered specifically for high-energy transient suppression in harsh environments, with focus on automotive, industrial, and telecom infrastructure applications.
FAQ
What is the breakdown voltage tolerance of the 1N6283-E3/73?
The 1N6283-E3/73 has a specified breakdown voltage range of 31.4 V to 34.7 V at 1.0 mA test current, representing ±5.2% tolerance around the nominal 33 V rating. This tight VBR window ensures consistent clamping behavior across production lots and supports predictable overvoltage protection margins in 24 V and 32 V systems where the 1N6283-E3/73 is commonly deployed.
Is the 1N6283-E3/73 suitable for bidirectional transient protection?
No, the 1N6283-E3/73 is a unidirectional TVS diode, intended for DC rail protection where polarity is fixed. For bidirectional applications (e.g., AC lines or differential buses), Vishay offers the 1N6283CA variant - which shares identical VBR, VC, and PPPM specs but uses symmetrical avalanche structure. The 1N6283-E3/73 must be installed with cathode toward the protected line and anode to ground to function correctly.
What is the maximum clamping voltage of the 1N6283-E3/73 under surge conditions?
The 1N6283-E3/73 clamps to a maximum of 45.7 V when subjected to its rated peak pulse current of 32.8 A under the standard 10/1000 µs waveform. This value is measured at the device terminals and represents the upper bound of voltage seen by downstream circuitry during worst-case surge events - critical for verifying compatibility with 48 V-tolerant ICs or selecting appropriate series impedance for coordinated protection.
Does the 1N6283-E3/73 meet automotive qualification standards?
The base 1N6283-E3/73 is commercial-grade and RoHS-compliant. However, Vishay offers the AEC-Q101 qualified variant as 1N6283HE3_B (with "B" revision code), which undergoes extended stress testing including temperature cycling, HAST, and mechanical shock. For automotive applications requiring qualification evidence, specify the HE3_B suffix - the 1N6283-E3/73 itself is not AEC-Q101 certified.
How does the thermal resistance of the 1N6283-E3/73 affect PCB layout?
The 1N6283-E3/73 has RθJL = 15.4 °C/W (junction-to-lead) and RθJA = 75 °C/W (junction-to-ambient), meaning thermal performance depends heavily on copper pour area and lead soldering quality. To maintain TJ < 175 °C during repetitive surges, use ≥100 mm² of 2 oz. copper connected to both leads, avoid narrow traces, and ensure full-solder fillets - especially critical when deploying the 1N6283-E3/73 in enclosed industrial enclosures.
1N6283-E3/73 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-201AA, DO-27, Axial
- Series:
- TransZorb®
- Packaging:
- Tape & Box (TB)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 26.8V
- Voltage - Breakdown (Min):
- 29.7V
- Voltage - Clamping (Max) @ Ipp:
- 47.7V
- Current - Peak Pulse (10/1000µs):
- 31.4A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 1.5KE
1N6283-E3/73 FAQ
1.How can I place an order for 1N6283-E3/73 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6283-E3/73 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6283-E3/73 reliable?
The price and inventory of 1N6283-E3/73 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6283-E3/73 is usually 5 days.
3.What payment methods are accepted for 1N6283-E3/73?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6283-E3/73 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6283-E3/73?
1N6283-E3/73 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6283-E3/73 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6283-E3/73?
For technical support, including 1N6283-E3/73 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6283-E3/73 requirements.
6.How does Aetrix verify that 1N6283-E3/73 is sourced from the original manufacturer or authorized distributors?
All 1N6283-E3/73 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6283-E3/73 meets industry standards.
7.What is the process for return or replacement of 1N6283-E3/73?
All 1N6283-E3/73 units undergo pre-shipment inspection (PSI). If there is an issue with 1N6283-E3/73, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6283-E3/73 part is unused and in its original packaging.
Return procedure for 1N6283-E3/73:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6283-E3/73 Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

