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Vishay General Semiconductor - Diodes Division 1N6284AHE3_B/C
- Part No.:
- 1N6284AHE3_B/C
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-201AA, DO-27, Axial
- Datasheet:
-
1N6284AHE3_B/C.pdf
- Description:
- 1.5KW,36V 5%,UNIDIR,AXIAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:9,518
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Product details
Overview
1N6284AHE3_B/C from Vishay General Semiconductor is a unidirectional Transient Voltage Suppressor (TVS) diode designed for primary overvoltage protection of DC power rails and signal lines. It features a 34.2 V to 37.8 V breakdown voltage (VBR) at 1.0 mA test current, 30.8 V maximum standoff voltage (VWM), 49.9 V clamping voltage (VC) at 30.1 A peak pulse current, and 1500 W peak pulse power rating with 10/1000 µs waveform - used in automotive power supply inputs and industrial sensor interfaces.
For engineers reviewing the 1N6284AHE3_B/C datasheet, 1N6284AHE3_B/C pinout, 1N6284AHE3_B/C application, or 1N6284AHE3_B/C equivalent, this device is selected for robust transient suppression in 24 V and 36 V systems where fast response (<1 ns), low clamping ratio (VC/VWM ≈ 1.62), and AEC-Q101 qualification (HE3 suffix) are required.
Technical Context
This unidirectional TVS diode operates as a voltage-clamped shunt protector, entering avalanche conduction when reverse voltage exceeds its specified VBR range. Its glass-passivated junction ensures stable breakdown characteristics and low leakage (<1.0 µA at VWM), while the 1500 W peak pulse power rating is validated under JEDEC-standard 10/1000 µs waveform with 0.01% duty cycle.
The device exhibits a temperature coefficient of +0.099 %/°C for VBR, enabling predictable derating above 25 °C ambient, and supports surge currents up to 200 A (8.3 ms half-sine) in unidirectional configuration. Its thermal resistance (RθJL = 15.4 °C/W) allows effective heat dissipation through PCB copper and lead frames without external heatsinking in typical board-mount applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 34.2 V / 37.8 V at 1.0 mA - defines precise avalanche onset window for reliable triggering in 36 V nominal systems |
| VWM | 30.8 V - maximum continuous reverse operating voltage before leakage exceeds 1.0 µA; sets safe DC rail margin |
| VC @ IPPM | 49.9 V at 30.1 A - clamping voltage during 10/1000 µs transient; limits downstream IC stress to ≤50 V |
| PPPM | 1500 W - peak pulse power handling capability enables protection against IEC 61000-4-5 Level 4 surges (4 kV/2 Ω) |
| IFSM | 200 A (8.3 ms half-sine) - single-event surge current rating supports automotive load-dump immunity per ISO 7637-2 |
| TJ max. | +175 °C - high junction temperature rating permits operation in under-hood automotive environments |
| AEC-Q101 | Qualified (HE3 suffix) - certified for automotive-grade reliability including HTOL, TC, and UHAST testing |
Pinout & Package
Package: Case Style 1.5KE, molded epoxy body with matte tin-plated leads; RoHS-compliant and AEC-Q101 qualified (HE3 suffix). Dimensions: 5.6 mm × 5.2 mm × 9.5 mm (L × W × H), lead spacing 2.54 mm, lead length 9.5 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal in forward bias; connected to system ground or low-side reference | Provides low forward voltage drop (VF = 3.5 V @ 100 A) during fault conditions; must be routed with low-inductance path to ground plane |
| Cathode | Current exit terminal in forward bias; marked by color band; connected to protected line | Reverse-biased during normal operation; avalanche conduction initiates here when VPROTECTED > VBR; requires short, wide trace to minimize clamping overshoot |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Ensures stable, repeatable breakdown voltage with <±5% tolerance and minimal drift over lifetime and temperature |
| 1500 W peak pulse power (10/1000 µs) | Supports IEC 61000-4-5 surge immunity up to 4 kV open-circuit voltage with 2 Ω source impedance |
| AEC-Q101 qualification (HE3) | Validated for automotive use including temperature cycling (-40 °C to +125 °C), humidity testing, and mechanical shock |
| Low clamping ratio (VC/VWM = 1.62) | Minimizes overvoltage exposure to downstream components such as CAN transceivers and microcontrollers |
| Fast response time (<1 ns) | Clamps transients before sensitive ICs experience destructive overvoltage - critical for protecting 3.3 V/5 V logic |
Applications
| Automotive Power Input Protection | Industrial Sensor Signal Line Protection |
|---|---|
Use Scenario: 24 V battery-fed ECUs exposed to ISO 7637-2 load dump and jump-start surges. IC Role / Device Role: Primary shunt clamp on main power rail upstream of DC/DC converter input. Use Value: Limits transient voltage to ≤50 V, preventing damage to buck controller ICs rated for 45 V absolute maximum input. |
Use Scenario: 4–20 mA current loop interface in factory automation PLC modules subjected to EFT bursts. IC Role / Device Role: Bidirectional protection (when paired with companion device) or unidirectional rail clamp on analog front-end. Use Value: Clamps induced spikes to <50 V while maintaining sub-1 µA leakage at 30.8 V, preserving loop accuracy. |
| Telecom DC Power Feeds | Consumer Appliance Motor Drive Inputs |
Use Scenario: -48 V telecom rectifier outputs feeding base station RF modules vulnerable to lightning-induced surges. IC Role / Device Role: Unidirectional TVS placed between rectifier output and hot-swap controller input. Use Value: Absorbs 1500 W pulses without degradation, enabling compliance with GR-1089-CORE surge requirements. |
Use Scenario: Brushed DC motor driver boards in smart appliances experiencing commutation-induced transients. IC Role / Device Role: Clamp across H-bridge supply rails to suppress inductive kickback during PWM switching. Use Value: Withstands 200 A surge current (8.3 ms) and clamps to 49.9 V, protecting MOSFETs with 60 V VDSS. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ36A-E3/52 | Lower PPPM (600 W), smaller SMB package (3.6 mm × 2.5 mm), VBR = 40–44.2 V, VC = 58.1 V @ 10.3 A | Targeted at space-constrained consumer electronics; insufficient for ISO 7637-2 load dump in automotive | Select when board area is limited and surge energy is ≤600 W; verify clamping voltage compatibility with downstream IC ratings. |
| 1.5KE36CAHE3_B/C | Bidirectional variant with same VBR/VWM/VC specs but symmetrical clamping in both polarities; identical package and AEC-Q101 qualification | Required for AC-coupled or floating signal lines (e.g., RS-485, CAN bus) where polarity reversal occurs | Choose for bidirectional protection needs; not interchangeable with 1N6284AHE3_B/C due to polarity and circuit topology differences. |
Compared with SMBJ36A-E3/52, the 1N6284AHE3_B/C delivers 2.5× higher surge power handling and lower clamping ratio, making it suitable for demanding automotive and industrial rails. Against 1.5KE36CAHE3_B/C, it offers superior unidirectional efficiency and lower leakage but cannot protect AC signals without external polarity control.
Availability
1N6284AHE3_B/C is available at Aetrix Electronics and suitable for automotive electronic control units, industrial programmable logic controllers, and telecom power distribution systems requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant surge protection.
Supply support for 1N6284AHE3_B/C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and automotive-grade qualification.
The 1N6284AHE3_B/C belongs to the TRANSZORB® 1.5KE family - engineered specifically for high-energy transient suppression in harsh environments, including engine compartments and factory floors.
FAQ
What is the breakdown voltage tolerance for 1N6284AHE3_B/C?
The 1N6284AHE3_B/C has a guaranteed breakdown voltage range of 34.2 V to 37.8 V at 1.0 mA test current, representing ±5.3% tolerance around the nominal 36 V rating. This tight VBR window ensures consistent triggering behavior across production lots and temperature extremes, critical for predictable protection in 24 V/36 V systems.
Is 1N6284AHE3_B/C suitable for protecting CAN bus lines?
No - the 1N6284AHE3_B/C is unidirectional and intended for DC rail protection, not bidirectional data lines. For CAN FD or classical CAN, a bidirectional TVS like 1.5KE36CAHE3_B/C or dedicated CAN-optimized devices (e.g., SMAJ24CA) are required to handle signal polarity reversals without forward conduction.
Does 1N6284AHE3_B/C meet AEC-Q101 requirements?
Yes - the HE3 suffix explicitly denotes AEC-Q101 qualification per the Vishay datasheet revision 09-Aug-2022. This includes stress testing for high-temperature operating life, temperature cycling, unbiased highly accelerated stress test (UHAST), and mechanical shock, confirming suitability for automotive under-hood applications.
What is the maximum clamping voltage of 1N6284AHE3_B/C at rated peak pulse current?
The 1N6284AHE3_B/C clamps to a maximum of 49.9 V at its rated peak pulse current of 30.1 A (10/1000 µs waveform). This value is measured per JEDEC standard and represents the worst-case voltage seen by downstream components during a full-rated surge event.
Can 1N6284AHE3_B/C be used in parallel to increase surge handling capacity?
While possible, paralleling multiple 1N6284AHE3_B/C devices is not recommended without careful matching and layout balancing. Variations in VBR and dynamic impedance can cause current imbalance, leading to premature failure of one unit. For higher energy requirements, select a higher-rated part (e.g., 3KP36A) instead.
1N6284AHE3_B/C Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-201AA, DO-27, Axial
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 30.8V
- Voltage - Breakdown (Min):
- 34.2V
- Voltage - Clamping (Max) @ Ipp:
- 49.9V
- Current - Peak Pulse (10/1000µs):
- 30.1A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 1.5KE
1N6284AHE3_B/C FAQ
1.How can I place an order for 1N6284AHE3_B/C through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6284AHE3_B/C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6284AHE3_B/C reliable?
The price and inventory of 1N6284AHE3_B/C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6284AHE3_B/C is usually 5 days.
3.What payment methods are accepted for 1N6284AHE3_B/C?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6284AHE3_B/C transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6284AHE3_B/C?
1N6284AHE3_B/C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6284AHE3_B/C order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6284AHE3_B/C?
For technical support, including 1N6284AHE3_B/C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6284AHE3_B/C requirements.
6.How does Aetrix verify that 1N6284AHE3_B/C is sourced from the original manufacturer or authorized distributors?
All 1N6284AHE3_B/C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6284AHE3_B/C meets industry standards.
7.What is the process for return or replacement of 1N6284AHE3_B/C?
All 1N6284AHE3_B/C units undergo pre-shipment inspection (PSI). If there is an issue with 1N6284AHE3_B/C, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6284AHE3_B/C part is unused and in its original packaging.
Return procedure for 1N6284AHE3_B/C:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6284AHE3_B/C Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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