Vishay General Semiconductor - Diodes Division 1N6285AHE3/51
- Part No.:
- 1N6285AHE3/51
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-201AA, DO-27, Axial
- Datasheet:
-
1N6285AHE3/51.pdf
- Description:
- TVS DIODE 33.3VWM 53.9VC 1.5KE
- Quantity:
- Payment:

- Shipping:

Inventory:2,544
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N6285AHE3/51 from Vishay General Semiconductor is a uni-directional Transient Voltage Suppressor (TVS) diode designed for primary overvoltage protection in DC power rails and signal lines. It features a 39 V breakdown voltage (VBR min/max = 37.1–41.0 V at 1.0 mA), 33.3 V stand-off voltage (VWM), 53.9 V clamping voltage (VC) at 27.8 A peak pulse current, and 1500 W peak pulse power rating with 10/1000 µs waveform - used to safeguard MOSFETs, ICs, and sensor interfaces in automotive and industrial control systems.
For engineers reviewing the 1N6285AHE3/51 datasheet, 1N6285AHE3/51 pinout, 1N6285AHE3/51 application, or 1N6285AHE3/51 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C max junction temperature, RoHS-compliant HE3 suffix (JESD 201 Class 2 whisker test), unidirectional polarity with cathode band marking, and compatibility with 1.5KE case-style PCB layouts requiring robust surge immunity up to 200 A IFSM.
Technical Context
This TVS diode operates as a voltage-clamped shunt protector: under transient overvoltage, it avalanches rapidly (<1 ns response) to divert surge current away from downstream circuitry while maintaining clamped voltage below system withstand limits. Its glass-passivated junction ensures stable VBR tolerance (±5%) and low incremental surge resistance.
Rated for 1500 W non-repetitive pulse power (10/1000 µs), it supports 200 A single-half-sine surge (8.3 ms) and dissipates 6.5 W continuously on infinite heatsink at TL = 75 °C. Thermal resistance is 15.4 °C/W junction-to-lead, enabling effective heat transfer through PCB copper pours or lead-frame conduction.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 37.1 V / 41.0 V at 1.0 mA - defines precise avalanche initiation threshold for reliable triggering before system damage |
| VWM | 33.3 V - maximum continuous reverse operating voltage; ensures no leakage conduction during normal 33 V rail operation |
| VC @ IPPM | 53.9 V at 27.8 A - clamped voltage during full 1500 W transient; must stay below protected device's absolute max rating |
| PPPM | 1500 W - peak pulse power handling capability with 10/1000 µs waveform; validates suitability for lightning/inductive-switching surges |
| IFSM | 200 A - peak forward surge current rating (8.3 ms half-sine); supports high-energy transients without bond-wire failure |
| TJ max | +175 °C - maximum junction temperature; enables operation in under-hood automotive or high-ambient industrial environments |
| Package | Case Style 1.5KE - axial-leaded DO-201AD package (0.375" lead length); compatible with standard through-hole wave-solder processes |
Pinout & Package
1N6285AHE3/51 uses the standard DO-201AD (Case Style 1.5KE) axial-leaded package: matte tin-plated leads, molded epoxy body meeting UL 94 V-0, cathode indicated by color band. Lead spacing is 0.210–0.285 inch (5.3–7.2 mm); body diameter 0.190–0.210 inch (4.8–5.3 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / surge return path | Connected to ground or low-impedance return plane; carries full transient current during clamping |
| Cathode | Avalanche voltage reference / protected line connection | Connected to protected node (e.g., 33 V rail); voltage referenced to anode during breakdown |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Ensures stable VBR tolerance (±5%), low leakage (<1 µA at VWM), and long-term reliability under thermal cycling |
| AEC-Q101 qualification | Validated for automotive applications including engine control units, body electronics, and ADAS sensors requiring zero-failure robustness |
| 1500 W peak pulse power | Withstands IEC 61000-4-5 Level 4 (4 kV surge) and ISO 7637-2 Pulse 5a/b when properly mounted with low-inductance layout |
| HE3 suffix | RoHS-compliant with JESD 201 Class 2 whisker resistance - eliminates tin whisker risk in high-reliability industrial and automotive assemblies |
| 175 °C junction rating | Enables use in high-temperature zones (e.g., near power converters or under-hood ECUs) without derating penalties |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 33 V supply rails in engine control modules against load dump and alternator transients per ISO 7637-2. IC Role / Device Role / Timing Role: Shunt-type transient suppressor placed directly across input rail and chassis ground. Use Value: Clamps 1500 W surges to ≤53.9 V within <1 ns, preventing damage to MCU, CAN transceivers, and voltage regulators. |
Use Scenario: Safeguarding analog inputs of pressure/temperature sensors in factory automation PLCs exposed to relay coil kickback. IC Role / Device Role / Timing Role: Uni-directional TVS connected between sensor signal line and local ground, referenced to 3.3/5 V supply. Use Value: Limits induced spikes to <54 V while maintaining <1 µA leakage at 33.3 V stand-off, preserving signal integrity and ADC accuracy. |
| Telecom DC Feeder Protection | Consumer Power Adapter Output Protection |
Use Scenario: Shielding PoE-powered equipment front-ends from lightning-induced surges on 48 V DC feeder lines. IC Role / Device Role / Timing Role: Primary-level TVS on DC input stage upstream of DC-DC converter and isolation barrier. Use Value: Absorbs 10/1000 µs surges up to 27.8 A without degradation, meeting ITU-T K.21 Basic Protection requirements. |
Use Scenario: Overvoltage protection on secondary-side 33 V output of wall-mounted AC/DC adapters for smart home hubs. IC Role / Device Role / Timing Role: Final-stage clamp between output rail and ground, after filtering and before connector. Use Value: Prevents output overvoltage events (e.g., feedback loop failure) from damaging connected devices, with fail-safe short-circuit behavior. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ36A-E3/52 | Lower PPPM (600 W), smaller SMB package (surface-mount), VBR = 40–44.2 V, VC = 58.1 V @ 10.3 A | Designed for space-constrained PCBs; lacks AEC-Q101 qualification and 200 A IFSM rating | Select when board area is critical and surge energy is ≤600 W; verify thermal pad layout for SMB footprint. |
| 1.5KE39AHE3_A | Same electrical specs and 1.5KE package; differs only in revision code ("A" vs "X") and packaging (tape/reel vs bulk) | Identical functional performance; identical AEC-Q101 qualification and HE3 whisker compliance | Direct form-fit-function replacement; preferred for automated SMT assembly with 13" tape-and-reel delivery. |
Compared with SMBJ36A-E3/52, 1N6285AHE3/51 delivers 2.5× higher surge power handling and automotive-grade reliability; compared with 1.5KE39AHE3_A, it shares identical protection characteristics but differs in packaging format and reel configuration - making it optimal for manual or selective soldering in low-volume industrial repair and prototyping.
Availability
1N6285AHE3/51 is available at Aetrix Electronics and suitable for automotive ECU design, industrial PLC I/O protection, and telecom DC power systems requiring stable component supply, long-lifecycle support, and AEC-Q101-qualified surge immunity.
Supply support for 1N6285AHE3/51 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The 1N6285AHE3/51 belongs to Vishay's TRANSZORB® TVS family - engineered specifically for robust, millisecond-scale transient suppression in harsh environments where failure is not an option.
FAQ
What is the breakdown voltage tolerance of the 1N6285AHE3/51?
The 1N6285AHE3/51 has a specified breakdown voltage range of 37.1 V to 41.0 V at 1.0 mA test current, representing a ±5% tolerance around the nominal 39 V rating. This tight VBR window ensures consistent clamping behavior across production lots and supports reliable margining against protected device absolute maximum ratings in designs using the 1N6285AHE3/51.
Is the 1N6285AHE3/51 suitable for automotive applications?
Yes, the 1N6285AHE3/51 is AEC-Q101 qualified and explicitly rated for automotive use, including under-hood engine control units and body electronics. Its 175 °C maximum junction temperature, glass-passivated junction, and HE3 whisker-resistant plating meet stringent automotive reliability requirements - making the 1N6285AHE3/51 appropriate for ISO 7637-2 load dump and pulse testing in vehicle systems.
How does the 1N6285AHE3/51 differ from bi-directional TVS diodes like 1N6285CAHE3/51?
The 1N6285AHE3/51 is uni-directional, with a cathode band marking and forward voltage drop (~3.5 V at 100 A), intended for DC rail protection where polarity is fixed. In contrast, 1N6285CAHE3/51 is bi-directional, symmetric in both directions, and used in AC or floating signal lines. The 1N6285AHE3/51 cannot substitute for bi-directional types without circuit redesign due to polarity dependence and asymmetric IV characteristics.
What is the thermal resistance of the 1N6285AHE3/51, and how does it affect layout?
The 1N6285AHE3/51 has a typical junction-to-lead thermal resistance (RθJL) of 15.4 °C/W. This means efficient heat transfer relies on direct conduction through its axial leads into PCB copper pours or chassis ground. For sustained surge duty, designers should use wide copper traces (>250 mils) tied to internal ground planes - critical because the 1N6285AHE3/51's RθJA is 75 °C/W, making lead conduction the dominant cooling path.
Does the 1N6285AHE3/51 require external series impedance for optimal protection?
No, the 1N6285AHE3/51 functions as a self-limiting shunt device and does not require series impedance to operate. However, adding a small series resistor or ferrite bead upstream improves energy distribution during multi-pulse events and reduces di/dt stress on the 1N6285AHE3/51. Layout best practices - such as minimizing trace inductance between the 1N6285AHE3/51 and protected node - are more critical than external components for achieving its rated 53.9 V clamping performance.
1N6285AHE3/51 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-201AA, DO-27, Axial
- Series:
- TransZorb®
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 33.3V
- Voltage - Breakdown (Min):
- 37.1V
- Voltage - Clamping (Max) @ Ipp:
- 53.9V
- Current - Peak Pulse (10/1000µs):
- 27.8A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 1.5KE
1N6285AHE3/51 FAQ
1.How can I place an order for 1N6285AHE3/51 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6285AHE3/51 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6285AHE3/51 reliable?
The price and inventory of 1N6285AHE3/51 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6285AHE3/51 is usually 5 days.
3.What payment methods are accepted for 1N6285AHE3/51?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6285AHE3/51 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6285AHE3/51?
1N6285AHE3/51 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6285AHE3/51 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6285AHE3/51?
For technical support, including 1N6285AHE3/51 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6285AHE3/51 requirements.
6.How does Aetrix verify that 1N6285AHE3/51 is sourced from the original manufacturer or authorized distributors?
All 1N6285AHE3/51 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6285AHE3/51 meets industry standards.
7.What is the process for return or replacement of 1N6285AHE3/51?
All 1N6285AHE3/51 units undergo pre-shipment inspection (PSI). If there is an issue with 1N6285AHE3/51, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6285AHE3/51 part is unused and in its original packaging.
Return procedure for 1N6285AHE3/51:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6285AHE3/51 Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

