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Vishay General Semiconductor - Diodes Division 1N6285AHE3_B/C
- Part No.:
- 1N6285AHE3_B/C
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-201AA, DO-27, Axial
- Datasheet:
-
1N6285AHE3_B/C.pdf
- Description:
- 1.5KW,39V 5%,UNIDIR,AXIAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,974
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Product details
Overview
1N6285AHE3_B/C from Vishay General Semiconductor is a unidirectional Transient Voltage Suppressor (TVS) diode designed for primary-side overvoltage protection in power rails and signal lines. It features a 39 V breakdown voltage (VBR = 37.1–41.0 V at 1.0 mA), 33.3 V stand-off voltage (VWM), 53.9 V clamping voltage (VC) at 27.8 A peak pulse current, and 1500 W peak pulse power rating with 10/1000 µs waveform - used to safeguard MOSFETs, ICs, and sensor interfaces in automotive and industrial power supplies.
For engineers reviewing the 1N6285AHE3_B/C datasheet, 1N6285AHE3_B/C pinout, 1N6285AHE3_B/C application, or 1N6285AHE3_B/C equivalent, this device delivers verified AEC-Q101 qualification (HE3 suffix), RoHS-compliant matte tin-plated leads, UL 94 V-0 molded epoxy package, and glass passivated junction for stable surge performance in harsh environments.
Technical Context
This unidirectional TVS diode operates as a voltage-clamped shunt protector: when transient voltage exceeds VWM (33.3 V), it avalanches rapidly (<1 ns response) to clamp the line at ≤53.9 V, diverting up to 27.8 A (10/1000 µs) away from downstream circuitry. Its low incremental surge resistance ensures minimal voltage overshoot during fast transients.
Designed for single-pulse and low-duty-cycle repetitive surges, the 1N6285AHE3_B/C sustains 6.5 W steady-state power dissipation on infinite heatsink at TL = 75 °C and handles 200 A non-repetitive forward surge (8.3 ms half-sine). Junction temperature range spans −55 °C to +175 °C, supporting under-hood automotive and industrial control applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 37.1 V / 41.0 V at 1.0 mA - defines precise avalanche initiation threshold for reliable overvoltage triggering |
| VWM | 33.3 V - maximum continuous working voltage before leakage rises; sets safe operating margin below VBR |
| VC @ IPPM | 53.9 V at 27.8 A - clamping voltage during 10/1000 µs surge; determines protected circuit's maximum stress level |
| PPPM | 1500 W - peak pulse power handling capacity; enables robust protection against lightning-induced or inductive-switching transients |
| IFSM | 200 A (8.3 ms half-sine) - surge current capability without bond-wire fusing; critical for motor drive or relay coil suppression |
| TJ max. | +175 °C - extended junction temperature rating allows placement near heat sources in engine control units or power converters |
| Package | Case Style 1.5KE - industry-standard DO-201AD axial leaded package (0.375" lead length); compatible with through-hole reflow and wave soldering |
Pinout & Package
Package: DO-201AD (Case Style 1.5KE), molded epoxy body with matte tin-plated axial leads; cathode indicated by color band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point during reverse-biased clamping | Connected to protected line; conducts surge current to ground when VLINE > VC |
| Cathode (banded end) | Reference terminal for avalanche breakdown | Typically tied to system ground or low-impedance return path; defines polarity-sensitive clamping direction |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronics per stress test requirements - supports deployment in ECU, ADAS, and body control modules |
| Glass passivated junction | Stable VBR tolerance and low leakage (<1.0 µA at VWM) across temperature and lifetime |
| 1500 W peak pulse power | Withstands high-energy transients (e.g., ISO 7637-2 Pulse 5a) without degradation in automotive 12 V/24 V systems |
| UL 94 V-0 flammability rating | Mold compound self-extinguishes under flame exposure - meets safety standards for enclosed industrial equipment |
| JESD 201 class 2 whisker resistance | HE3 suffix confirms enhanced reliability for long-term storage and thermal cycling in mission-critical applications |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 12 V battery-fed microcontroller power inputs from load dump and alternator ripple transients in vehicle ECUs. IC Role / Device Role: Shunt clamping element placed between VCC and chassis ground to limit voltage excursions to ≤53.9 V. Use Value: Prevents latch-up or permanent damage to 3.3 V/5 V logic ICs during ISO 16750-2 compliant 35 V/100 ms load dump events. | Use Scenario: Safeguarding analog outputs of pressure/temperature sensors connected to PLC analog input cards. IC Role / Device Role: Bidirectional-capable unidirectional TVS (used with series resistor) suppresses ESD and field-induced surges on 4–20 mA loop lines. Use Value: Maintains signal integrity by limiting transients to <54 V while adding <1 µA leakage at 33.3 V - no impact on 16-bit ADC accuracy. |
| DC-DC Converter Input Stage | Motor Drive Gate Driver Protection |
Use Scenario: Clamping input voltage spikes on buck converter front-end caused by cable inductance during hot-plug or battery connection. IC Role / Device Role: Primary overvoltage clamp placed across input capacitor to absorb energy before it reaches controller IC. Use Value: Enables use of lower-voltage-rated input capacitors and reduces need for oversized input filtering due to predictable 53.9 V clamping ceiling. | Use Scenario: Protecting high-side N-channel MOSFET gate drivers from Miller-induced voltage spikes during fast switching in BLDC inverters. IC Role / Device Role: Unidirectional TVS from gate-to-source, referenced to driver ground, clamps negative-going transients. Use Value: Prevents gate oxide breakdown by limiting VGS to ≤53.9 V during dV/dt-induced coupling - preserves MOSFET reliability at 100 kHz switching. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ36A | DO-214AA package (SMB), 36 V VWM, 58.1 V VC at 25.4 A, 600 W PPPM | Lower power rating and smaller footprint; suited for space-constrained PCBs but insufficient for 1500 W transients | Select when board area is limited and surge energy is ≤600 W (e.g., USB port protection). |
| 1.5KE39A-E3/54 | Same electrical specs and DO-201AD package, but commercial-grade (non-AEC-Q101), E3 suffix only (JESD 201 class 1A) | Lacks automotive qualification and reduced whisker resistance; acceptable for industrial/commercial power supplies | Choose for cost-sensitive non-automotive designs where AEC-Q101 is not mandated. |
Compared with SMBJ36A and 1.5KE39A-E3/54, the 1N6285AHE3_B/C uniquely combines AEC-Q101 qualification, 1500 W clamping capacity, and JESD 201 class 2 whisker resistance in the proven DO-201AD package - making it the only option qualified for high-reliability automotive power rail protection.
Availability
1N6285AHE3_B/C is available at Aetrix Electronics and suitable for automotive electronic control units, industrial programmable logic controllers, and DC-DC converter input stages requiring stable component supply and long-term lifecycle support.
Supply support for 1N6285AHE3_B/C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability and automotive-grade validation.
The 1N6285AHE3_B/C belongs to Vishay's TRANSZORB® TVS family, engineered specifically for high-energy transient suppression in demanding environments including automotive, industrial, and telecom infrastructure.
FAQ
What is the breakdown voltage tolerance of the 1N6285AHE3_B/C?
The 1N6285AHE3_B/C has a specified breakdown voltage range of 37.1 V to 41.0 V at 1.0 mA test current. This ±5.3% tolerance ensures consistent clamping behavior across production lots and supports robust design margins in automotive and industrial applications where precise overvoltage thresholds are required.
Is the 1N6285AHE3_B/C suitable for bidirectional transient protection?
No, the 1N6285AHE3_B/C is a unidirectional TVS diode, identified by the "A" suffix and cathode band marking. For bidirectional protection, Vishay offers the 1N6285CA variant. Using the 1N6285AHE3_B/C in bidirectional configurations requires external circuitry such as back-to-back diodes or series resistors to avoid forward conduction during negative transients.
Does the 1N6285AHE3_B/C meet automotive qualification standards?
Yes, the 1N6285AHE3_B/C is AEC-Q101 qualified, as confirmed by the HE3 suffix and documentation in Vishay's 88301 datasheet. This qualification covers stress tests including high-temperature operating life, temperature cycling, and unbiased highly accelerated stress testing - validating its suitability for under-hood and chassis-mounted automotive electronics.
What is the maximum clamping voltage of the 1N6285AHE3_B/C under surge conditions?
The 1N6285AHE3_B/C clamps to a maximum of 53.9 V at its rated peak pulse current of 27.8 A (10/1000 µs waveform). This value is measured per JEDEC standard and represents the upper limit of voltage seen by protected circuitry during worst-case transient events, enabling accurate downstream component voltage rating selection.
How does the HE3 suffix differ from the E3 suffix in the 1N6285AHE3_B/C part number?
HE3 denotes RoHS compliance plus AEC-Q101 qualification and JESD 201 class 2 whisker resistance, whereas E3 indicates RoHS compliance and JESD 201 class 1A only. The "H" prefix in HE3 explicitly signals automotive-grade reliability; the "B/C" denotes tape-and-reel packaging (1400 pcs per 13″ reel), not a functional variant.
1N6285AHE3_B/C Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-201AA, DO-27, Axial
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 33.3V
- Voltage - Breakdown (Min):
- 37.1V
- Voltage - Clamping (Max) @ Ipp:
- 53.9V
- Current - Peak Pulse (10/1000µs):
- 27.8A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 1.5KE
1N6285AHE3_B/C FAQ
1.How can I place an order for 1N6285AHE3_B/C through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6285AHE3_B/C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6285AHE3_B/C reliable?
The price and inventory of 1N6285AHE3_B/C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6285AHE3_B/C is usually 5 days.
3.What payment methods are accepted for 1N6285AHE3_B/C?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6285AHE3_B/C transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6285AHE3_B/C?
1N6285AHE3_B/C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6285AHE3_B/C order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6285AHE3_B/C?
For technical support, including 1N6285AHE3_B/C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6285AHE3_B/C requirements.
6.How does Aetrix verify that 1N6285AHE3_B/C is sourced from the original manufacturer or authorized distributors?
All 1N6285AHE3_B/C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6285AHE3_B/C meets industry standards.
7.What is the process for return or replacement of 1N6285AHE3_B/C?
All 1N6285AHE3_B/C units undergo pre-shipment inspection (PSI). If there is an issue with 1N6285AHE3_B/C, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6285AHE3_B/C part is unused and in its original packaging.
Return procedure for 1N6285AHE3_B/C:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6285AHE3_B/C Tags
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Toshiba Semiconductor and Storage
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