Vishay General Semiconductor - Diodes Division 1N6286AHE3/51
- Part No.:
- 1N6286AHE3/51
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-201AA, DO-27, Axial
- Datasheet:
-
1N6286AHE3/51.pdf
- Description:
- TVS DIODE 36.8VWM 59.3VC 1.5KE
- Quantity:
- Payment:

- Shipping:

Inventory:5,726
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N6286AHE3/51 from Vishay General Semiconductor is a unidirectional Transient Voltage Suppressor (TVS) diode designed for primary overvoltage protection in DC power rails and signal lines. It features a 40.9 V to 45.2 V breakdown voltage range at 1.0 mA test current, 36.8 V maximum standoff voltage, 1.0 µA max reverse leakage at VWM, 25.3 A peak pulse current (10/1000 µs), and clamps transients to 59.3 V at rated IPPM. It is used in automotive power supply inputs and industrial sensor interface circuits.
For engineers reviewing the 1N6286AHE3/51 datasheet, 1N6286AHE3/51 pinout, 1N6286AHE3/51 application, or 1N6286AHE3/51 equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance data, JEDEC 1.5KE package dimensions, and real-world protection use cases - all confirmed from Vishay's official Document Number 88301 (Rev. 11-Oct-16).
Technical Context
This unidirectional TVS diode operates as a fast-acting shunt clamp, activating within <1 ns when transient voltage exceeds its breakdown threshold. Its glass-passivated junction ensures stable VBR tolerance (±5%) and low incremental surge resistance, enabling precise clamping under repetitive 10/1000 µs surges up to 1500 W peak power.
It is rated for continuous operation from –55 °C to +175 °C junction temperature, with thermal resistance of 15.4 °C/W (junction-to-lead) and 75 °C/W (junction-to-ambient). The device meets JESD 201 Class 2 whisker resistance and is RoHS-compliant with matte tin-plated leads solderable per J-STD-002.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage VBR | 40.9 V min / 45.2 V max at 1.0 mA - defines precise clamping activation threshold for overvoltage events |
| Standoff Voltage VWM | 36.8 V max - ensures no conduction during normal 36 V DC rail operation |
| Peak Pulse Power PPPM | 1500 W (10/1000 µs) - sustains single high-energy lightning-induced surges without failure |
| Clamping Voltage VC | 59.3 V at 25.3 A IPPM - limits downstream IC voltage stress to safe levels during transient |
| Reverse Leakage ID | 1.0 µA max at VWM - negligible standby current draw in protected circuits |
| Junction Temperature Range | –55 °C to +175 °C - supports under-hood automotive and industrial ambient environments |
| AEC-Q101 Qualified | Yes - validated for automotive-grade reliability per stress test requirements |
Pinout & Package
Package: JEDEC-standard Case Style 1.5KE - molded epoxy body with axial leads, UL 94 V-0 rated, 0.375" (9.5 mm) lead length, 0.210" (5.3 mm) body diameter.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal in forward bias | Connected to lower-potential side (e.g., ground or return path) in unidirectional clamp configuration |
| Cathode | Current exit terminal in forward bias; marked with color band | Connected to protected line (e.g., 36 V rail); conducts surge current to ground when V > VBR |
Key Features
| Feature | Design Value |
|---|---|
| Glass passivated chip junction | Ensures stable VBR over lifetime and resistance to humidity/moisture-induced parameter drift |
| 1500 W peak pulse power (10/1000 µs) | Handles IEC 61000-4-5 Level 4 surge events (4 kV, 2 Ω source) without degradation |
| AEC-Q101 qualification | Validated for automotive powertrain and body electronics applications requiring zero field failures |
| Low incremental surge resistance | Minimizes voltage overshoot during fast-rising transients (<1 ns response), improving protection margin |
| Matte tin-plated leads | Enables reliable solder joint formation per J-STD-002; passes JESD 201 Class 2 whisker testing |
Applications
| Automotive Power Input Protection | Industrial Sensor Signal Line Protection |
|---|---|
Use Scenario: 12 V/24 V battery-fed ECUs exposed to load dump and alternator ripple. IC Role / Device Role / Timing Role: Unidirectional shunt TVS placed between power rail and chassis ground to clamp transients before they reach PMIC or MCU input pins. Use Value: Limits voltage to ≤59.3 V during 100 V/100 ms load dump, preventing gate oxide rupture in downstream MOSFETs and LDOs. |
Use Scenario: 4–20 mA current loop sensors in factory automation subject to ESD and inductive switching noise. IC Role / Device Role / Timing Role: TVS mounted across sensor output terminals to divert fast transients induced by relay coil de-energization. Use Value: Clamps 8/20 µs surges to <60 V within 1 ns, preserving analog front-end ADC accuracy and isolator integrity. |
| Telecom DC Power Feeds | Consumer Device USB Port Protection |
Use Scenario: -48 V telecom rectifier outputs feeding base station control boards. IC Role / Device Role / Timing Role: Primary overvoltage clamp on DC input, upstream of DC/DC converters and hot-swap controllers. Use Value: Absorbs 1500 W surges from lightning-induced coupling on long feeder lines while maintaining <1 µA leakage at -41 V nominal. |
Use Scenario: USB 2.0 VBUS line in portable medical monitors subjected to user-handling ESD. IC Role / Device Role / Timing Role: Standoff-rated TVS placed between VBUS and GND to suppress ±15 kV contact ESD per IEC 61000-4-2. Use Value: Clamps ESD event to 59.3 V in <1 ns, preventing latch-up in USB transceivers and preserving enumeration functionality. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ36A | Lower PPPM (600 W), smaller SMB package (vs. axial 1.5KE), 36 V VWM, 58.1 V VC @ 10.3 A | Better suited for space-constrained PCBs; insufficient for 1500 W IEC 61000-4-5 Level 4 compliance | Select only when board area is critical and surge energy is limited to ≤600 W |
| 1.5KE43A-E3/54 | Identical electrical specs and 1.5KE package; differs only in packaging suffix (E3/54 = tape-and-reel, 1400 pcs; HE3/51 = AEC-Q101 + tape-and-reel, 1400 pcs) | No functional difference; both meet same VBR, VC, and thermal specs | Choose 1.5KE43A-E3/54 for commercial-grade cost-sensitive designs; retain 1N6286AHE3/51 for automotive AEC-Q101 traceability |
Compared with SMBJ36A, 1N6286AHE3/51 delivers 2.5× higher surge power handling and proven AEC-Q101 reliability, while 1.5KE43A-E3/54 offers identical protection performance without automotive qualification - making 1N6286AHE3/51 the sole choice where automotive-grade validation and full 1500 W capability are mandatory.
Availability
1N6286AHE3/51 is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor interfaces, and telecom DC power feeds requiring stable component supply with guaranteed AEC-Q101 compliance and full traceability.
Supply support for 1N6286AHE3/51 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The 1N6286AHE3/51 belongs to Vishay's TRANSZORB® TVS family, engineered specifically for robust, standardized transient suppression in harsh environments where failure is not an option - especially in AEC-Q101-certified automotive subsystems.
FAQ
What is the breakdown voltage tolerance of the 1N6286AHE3/51?
The 1N6286AHE3/51 has a specified breakdown voltage range of 40.9 V minimum to 45.2 V maximum at 1.0 mA test current, corresponding to a ±5% tolerance about the nominal 43 V rating. This tight VBR window ensures consistent clamping behavior across production lots and enables predictable system-level overvoltage protection design without derating overhead.
Is the 1N6286AHE3/51 suitable for automotive applications?
Yes, the 1N6286AHE3/51 is AEC-Q101 qualified per Vishay Document Number 88301, confirming it has passed stress tests including HTGB, HTRB, TCT, and mechanical shock required for automotive under-hood and chassis-mounted electronics. Its –55 °C to +175 °C operating range and JESD 201 Class 2 whisker resistance further validate suitability for automotive power distribution modules and body control units.
How does the clamping voltage of the 1N6286AHE3/51 compare to its breakdown voltage?
The 1N6286AHE3/51 clamps at 59.3 V when subjected to its rated 25.3 A peak pulse current (10/1000 µs), which is approximately 32% above its maximum VBR of 45.2 V. This incremental clamping voltage (ΔVC = 14.1 V) reflects low dynamic impedance, ensuring minimal overshoot during fast transients - critical for protecting sensitive 3.3 V or 5 V logic downstream of the protected rail.
What is the thermal resistance of the 1N6286AHE3/51, and why does it matter?
The 1N6286AHE3/51 has a typical junction-to-lead thermal resistance (RθJL) of 15.4 °C/W and junction-to-ambient (RθJA) of 75 °C/W. RθJL is critical for surge duty-cycle calculations: during repetitive 10/1000 µs pulses, heat must conduct efficiently from the die into the PCB copper pour or heatsink via leads. High RθJA confirms the axial 1.5KE package relies on lead conduction - not ambient convection - for thermal management during transient events.
Can the 1N6286AHE3/51 be used in bi-directional configurations?
No, the 1N6286AHE3/51 is strictly unidirectional, as indicated by the "A" suffix and presence of a cathode band. Bi-directional variants (e.g., 1N6286CA) exist in the same family but are separate part numbers. Using 1N6286AHE3/51 in AC or floating-bus applications would result in forward conduction during negative half-cycles, causing failure. Always verify polarity marking and select CA-suffix parts for true bi-directional protection.
1N6286AHE3/51 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-201AA, DO-27, Axial
- Series:
- TransZorb®
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 36.8V
- Voltage - Breakdown (Min):
- 40.9V
- Voltage - Clamping (Max) @ Ipp:
- 59.3V
- Current - Peak Pulse (10/1000µs):
- 25.3A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 1.5KE
1N6286AHE3/51 FAQ
1.How can I place an order for 1N6286AHE3/51 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6286AHE3/51 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6286AHE3/51 reliable?
The price and inventory of 1N6286AHE3/51 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6286AHE3/51 is usually 5 days.
3.What payment methods are accepted for 1N6286AHE3/51?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6286AHE3/51 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6286AHE3/51?
1N6286AHE3/51 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6286AHE3/51 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6286AHE3/51?
For technical support, including 1N6286AHE3/51 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6286AHE3/51 requirements.
6.How does Aetrix verify that 1N6286AHE3/51 is sourced from the original manufacturer or authorized distributors?
All 1N6286AHE3/51 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6286AHE3/51 meets industry standards.
7.What is the process for return or replacement of 1N6286AHE3/51?
All 1N6286AHE3/51 units undergo pre-shipment inspection (PSI). If there is an issue with 1N6286AHE3/51, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6286AHE3/51 part is unused and in its original packaging.
Return procedure for 1N6286AHE3/51:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6286AHE3/51 Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

