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Vishay General Semiconductor - Diodes Division 1N6287AHE3_B/C
- Part No.:
- 1N6287AHE3_B/C
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-201AA, DO-27, Axial
- Datasheet:
-
1N6287AHE3_B/C.pdf
- Description:
- 1.5KW,47V 5%,UNIDIR,AXIAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,469
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Product details
Overview
1N6287AHE3_B/C from Vishay General Semiconductor is a unidirectional Transient Voltage Suppressor (TVS) diode designed for primary overvoltage protection in DC power rails and signal lines. It features a 47 V breakdown voltage (VBR = 44.7–49.4 V at 1.0 mA), 40.2 V standoff voltage (VWM), 64.8 V clamping voltage (VC) at 23.1 A peak pulse current, 1500 W peak pulse power (10/1000 µs), and operates across –55 °C to +175 °C junction temperature range - deployed in automotive power supply inputs and industrial sensor interfaces.
For engineers reviewing the 1N6287AHE3_B/C datasheet, 1N6287AHE3_B/C pinout, 1N6287AHE3_B/C application, or 1N6287AHE3_B/C equivalent, this part delivers verified AEC-Q101 qualification, glass-passivated junction reliability, and low incremental surge resistance - critical for ESD and lightning transient suppression in safety-critical embedded systems requiring stable clamping performance under repetitive surge stress.
Technical Context
This unidirectional TVS diode uses a silicon planar junction structure with glass passivation to achieve sub-nanosecond response time (<1 ns) and stable clamping behavior under 10/1000 µs surge waveforms. Its thermal resistance (RθJL = 15.4 °C/W) enables effective heat transfer through leads during high-current transients.
The device complies with JEDEC standards for transient suppressors and supports 200 A non-repetitive forward surge current (IFSM) at 8.3 ms half-sine waveform. Its 0.101 %/°C temperature coefficient of VBR ensures predictable voltage threshold drift across operating temperature ranges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 44.7 V / 49.4 V at 1.0 mA - defines precise voltage threshold where clamping initiates, ensuring reliable protection above system nominal voltage |
| VWM | 40.2 V - maximum continuous reverse working voltage; must exceed normal circuit operating voltage to prevent leakage conduction |
| VC @ IPPM | 64.8 V at 23.1 A - peak clamped voltage during 1500 W surge; determines maximum stress imposed on downstream ICs |
| PPPM | 1500 W (10/1000 µs) - peak transient energy handling capacity; sufficient for ISO 7637-2 Pulse 1/2a/5a and IEC 61000-4-5 Level 3 surges |
| IFSM | 200 A (8.3 ms half-sine) - withstands high-energy inductive switch-off events without bond wire failure |
| TJ max. | +175 °C - supports operation in under-hood automotive environments and high-ambient industrial enclosures |
| AEC-Q101 | Qualified - validated for automotive-grade reliability including HTOL, TCT, and ESD testing per AEC specification |
Pinout & Package
Package: Case Style 1.5KE - molded epoxy body with matte tin-plated leads; RoHS-compliant and qualified to JESD 201 Class 2 whisker test (HE3 suffix). Cathode indicated by color band on unidirectional devices.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point during forward conduction | Connected to lower-potential side (e.g., ground or return path) in unidirectional clamp configuration |
| Cathode | Current exit point during forward conduction; clamping node in reverse bias | Connected to protected line (e.g., 48 V rail or CAN_H); color band identifies this terminal |
Key Features
| Feature | Design Value |
|---|---|
| Glass passivated chip junction | Enables stable leakage performance (<1.0 µA at VWM) and long-term reliability under humidity and thermal cycling |
| 1500 W peak pulse power (10/1000 µs) | Supports robust protection against load dump and inductive switching transients in 24 V/48 V automotive systems |
| AEC-Q101 qualification (HE3_B variant) | Validated for automotive electronics use including engine control units and ADAS power domains |
| Low incremental surge resistance | Minimizes VC overshoot during fast-rising transients, improving margin for 3.3 V/5 V logic interface protection |
| Solder dip rated 275 °C for 10 s | Compatible with standard lead-free reflow and wave soldering processes without degradation |
Applications
| Automotive Power Input Protection | Industrial Sensor Signal Line Clamp |
|---|---|
Use Scenario: Protecting 48 V battery-fed ECUs from load dump pulses per ISO 7637-2 Pulse 5a. IC Role / Device Role / Timing Role: Primary shunt clamping device placed directly at connector entry point before DC-DC converter input. Use Value: Limits transient voltage to ≤64.8 V, preventing damage to upstream MOSFETs and controller ICs rated for 80 V max. |
Use Scenario: Safeguarding analog output lines (e.g., 4–20 mA current loop) in factory automation sensors exposed to EFT bursts. IC Role / Device Role / Timing Role: Fast-response voltage clamp on transmitter output, placed adjacent to connector. Use Value: Sub-ns response ensures clamping occurs before sensitive op-amps or ADC drivers experience overvoltage stress. |
| Telecom DC Power Feed Protection | Consumer Device USB Port Surge Guard |
Use Scenario: Shielding PoE-powered equipment (e.g., IP cameras) from induced surges on 48 V DC feed lines. IC Role / Device Role / Timing Role: Unidirectional TVS on PSE-side DC input, coordinated with upstream fuse and common-mode choke. Use Value: 1500 W rating handles multiple repetitions of IEC 61000-4-5 Combination Wave (1.2/50 µs + 8/20 µs) without parametric shift. |
Use Scenario: Adding secondary-level surge immunity to USB-C power delivery circuits in portable monitors. IC Role / Device Role / Timing Role: Standoff-clamp device on VBUS line, positioned after EMI filter but before buck controller. Use Value: 40.2 V VWM allows full 20 V PD3.1 operation while clamping >64 V transients to protect GaN FETs and PMICs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ47A-E3/52 | DO-214AA package (smaller footprint), 47 V VBR, 77.4 V VC @ 19.4 A, 600 W PPPM | Limited to lower-energy transients (IEC 61000-4-2 contact discharge only); unsuitable for ISO 7637-2 load dump | Select when board space is constrained and surge energy is limited to <600 W; verify thermal derating at elevated ambient temperatures. |
| 1.5KE47AHE3_A | Same 1.5KE package and electrical specs, but HE3_A revision (earlier AEC-Q101 qualification level; no B/C revision traceability) | Acceptable for non-safety-critical industrial use; not approved for new automotive designs requiring latest qualification evidence | Prefer 1N6287AHE3_B/C for new automotive programs requiring documented B/C revision compliance and extended lifetime data. |
Compared with SMBJ47A-E3/52, the 1N6287AHE3_B/C provides 2.5× higher peak pulse power and automotive-grade traceability; compared with 1.5KE47AHE3_A, it offers updated AEC-Q101 documentation and enhanced process control for long-lifecycle deployments.
Availability
1N6287AHE3_B/C is available at Aetrix Electronics and suitable for automotive power modules, industrial sensor nodes, telecom DC feeds, and consumer USB-C PD systems requiring stable component supply with full AEC-Q101 traceability and long-term lifecycle support.
Supply support for 1N6287AHE3_B/C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for automotive, industrial, and computing markets.
The 1N6287AHE3_B/C belongs to Vishay's TRANSZORB® TVS family, engineered specifically for high-energy transient suppression in harsh-environment applications where clamping precision, speed, and qualification rigor are mandatory.
FAQ
What is the clamping voltage of the 1N6287AHE3_B/C at its rated peak pulse current?
The 1N6287AHE3_B/C has a maximum clamping voltage (VC) of 64.8 V at 23.1 A peak pulse current (IPPM) under a 10/1000 µs waveform. This value is measured per JEDEC standard and defines the upper voltage limit imposed on protected circuitry during worst-case surge events - critical for ensuring downstream ICs remain within absolute maximum ratings.
Is the 1N6287AHE3_B/C suitable for automotive applications?
Yes, the 1N6287AHE3_B/C is AEC-Q101 qualified (HE3_B revision), making it suitable for automotive applications including engine control units, body electronics, and ADAS power domains. Its –55 °C to +175 °C operating range, glass-passivated junction, and validated surge endurance meet stringent automotive reliability requirements.
How does the 1N6287AHE3_B/C differ from the standard 1.5KE47A part?
The 1N6287AHE3_B/C is the commercial designation for the same 1.5KE47A device but with HE3_B/C suffix indicating RoHS compliance, JESD 201 Class 2 whisker resistance, and AEC-Q101 qualification. The base 1.5KE47A lacks automotive qualification and may use older revision codes without traceable B/C process validation.
What is the standoff voltage rating for the 1N6287AHE3_B/C?
The 1N6287AHE3_B/C has a maximum working peak reverse voltage (VWM) of 40.2 V. This means it can be continuously applied across the device in reverse bias without significant leakage current (<1.0 µA), provided the circuit's normal operating voltage remains below this threshold - essential for stable operation in 36 V nominal systems.
Does the 1N6287AHE3_B/C have polarity marking, and how is it identified?
Yes, the 1N6287AHE3_B/C is unidirectional and features a cathode band (color band) on the molded epoxy case to identify the cathode terminal. This band must be oriented toward the higher-potential side of the protected line (e.g., connected to a 48 V rail), while the anode connects to ground or return path - correct orientation is required for proper clamping function.
1N6287AHE3_B/C Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-201AA, DO-27, Axial
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 40.2V
- Voltage - Breakdown (Min):
- 44.7V
- Voltage - Clamping (Max) @ Ipp:
- 64.8V
- Current - Peak Pulse (10/1000µs):
- 23.1A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 1.5KE
1N6287AHE3_B/C FAQ
1.How can I place an order for 1N6287AHE3_B/C through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6287AHE3_B/C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6287AHE3_B/C reliable?
The price and inventory of 1N6287AHE3_B/C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6287AHE3_B/C is usually 5 days.
3.What payment methods are accepted for 1N6287AHE3_B/C?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6287AHE3_B/C transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6287AHE3_B/C?
1N6287AHE3_B/C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6287AHE3_B/C order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6287AHE3_B/C?
For technical support, including 1N6287AHE3_B/C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6287AHE3_B/C requirements.
6.How does Aetrix verify that 1N6287AHE3_B/C is sourced from the original manufacturer or authorized distributors?
All 1N6287AHE3_B/C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6287AHE3_B/C meets industry standards.
7.What is the process for return or replacement of 1N6287AHE3_B/C?
All 1N6287AHE3_B/C units undergo pre-shipment inspection (PSI). If there is an issue with 1N6287AHE3_B/C, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6287AHE3_B/C part is unused and in its original packaging.
Return procedure for 1N6287AHE3_B/C:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6287AHE3_B/C Tags
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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