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Vishay General Semiconductor - Diodes Division 1N6289AHE3_B/C
- Part No.:
- 1N6289AHE3_B/C
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-201AA, DO-27, Axial
- Datasheet:
-
1N6289AHE3_B/C.pdf
- Description:
- 1.5KW,56V 5%,UNIDIR,AXIAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,206
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Product details
Overview
1N6289AHE3_B/C from Vishay General Semiconductor is a unidirectional Transient Voltage Suppressor (TVS) diode designed for primary overvoltage protection in DC power rails and signal lines. It features a 53.2–58.8 V breakdown voltage (VBR), 47.8 V maximum standoff voltage (VWM), 77.0 V clamping voltage at 19.5 A peak pulse current, 1500 W peak pulse power rating (10/1000 µs), and operates across –55 °C to +175 °C junction temperature range - deployed in automotive ECUs, industrial PLC I/O modules, and telecom power supplies.
For engineers reviewing the 1N6289AHE3_B/C datasheet, 1N6289AHE3_B/C pinout, 1N6289AHE3_B/C application, or 1N6289AHE3_B/C equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance (RθJL = 15.4 °C/W), JEDEC 1.5KE package dimensions, and direct alternative part comparisons - all validated against Vishay Document #88301 (Rev. 09-Aug-2022).
Technical Context
This unidirectional TVS diode uses a glass-passivated silicon junction optimized for fast transient response (<1 ns) and low incremental surge resistance. Its clamping behavior is defined by a 10/1000 µs waveform with 0.01% duty cycle, and it sustains 200 A non-repetitive forward surge current (8.3 ms half-sine) while maintaining VF ≤ 5.0 V at 100 A.
The device is rated for 6.5 W steady-state power dissipation on an infinite heatsink at TL = 75 °C, with thermal resistance from junction to lead of 15.4 °C/W. It meets JESD 201 Class 2 whisker testing (HE3 suffix) and UL 94 V-0 flammability requirements for molded epoxy encapsulation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 53.2 V / 58.8 V at 1.0 mA test current - defines precise voltage threshold where clamping initiates under transient stress |
| VWM | 47.8 V maximum - ensures reliable blocking of normal operating voltage without leakage or conduction |
| VC @ IPPM | 77.0 V at 19.5 A - limits downstream component voltage exposure during 1500 W transient events |
| PPPM | 1500 W (10/1000 µs waveform) - enables robust protection against lightning-induced surges and inductive switching spikes |
| IFSM | 200 A (8.3 ms half-sine) - supports high-energy single-event surge handling without bond wire failure |
| TJ range | –55 °C to +175 °C - allows deployment in under-hood automotive, industrial motor drives, and outdoor telecom enclosures |
| RθJL | 15.4 °C/W - enables predictable thermal design when mounted to PCB copper pour or chassis |
Pinout & Package
Package: JEDEC-standard Case Style 1.5KE - axial-leaded, molded epoxy body (UL 94 V-0), 0.375" (9.5 mm) lead length, matte tin-plated leads compliant with J-STD-002 and JESD 22-B102.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point during forward conduction | Connected to protected circuit ground or low-side return path; color band denotes cathode, not anode |
| Cathode | Current exit point during forward conduction; clamping node during reverse transients | Connected to line being protected (e.g., 48 V rail); absorbs surge energy into ground when VLINE exceeds VBR |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Ensures stable VBR tolerance (±5%) and long-term reliability under thermal cycling and humidity |
| AEC-Q101 qualified (HE3_B variant) | Validated for automotive applications including engine control, body electronics, and ADAS power domains |
| 1500 W peak pulse power (10/1000 µs) | Provides immunity to ISO 7637-2 Pulse 5a/b (load dump) and IEC 61000-4-5 Level 4 surges |
| Low clamping ratio (VC/VBR ≈ 1.33) | Minimizes overvoltage stress on downstream MOSFETs, regulators, and microcontrollers |
| JESD 201 Class 2 whisker resistance | Eliminates risk of tin whisker growth in high-reliability, long-life industrial and automotive deployments |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 48 V battery-connected ECUs from load dump transients up to 60 V sustained for 400 ms. IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery rail and input capacitor to clamp surges before they reach DC/DC converters and MCU power inputs. Use Value: Clamps 1500 W transients at 77.0 V, limiting stress on 65 V-rated input stages and enabling compliance with ISO 16750-2. |
Use Scenario: Shielding 24 V analog sensor outputs (e.g., pressure, temperature) from ESD and cable discharge events in factory automation. IC Role / Device Role / Timing Role: TVS installed at connector entry point to shunt fast transients (<1 ns rise time) directly to chassis ground before reaching op-amp front-end. Use Value: Sub-1 ns response prevents latch-up in precision ADC drivers and maintains signal integrity under IEC 61000-4-2 ±8 kV contact discharge. |
| Telecom DC Power Input Protection | Motor Drive Control Signal Protection |
Use Scenario: Safeguarding -48 V telecom rectifier outputs against lightning-induced surges entering via long feeder lines. IC Role / Device Role / Timing Role: Unidirectional TVS connected between -48 V rail and system ground to absorb common-mode surges coupled onto power bus. Use Value: Withstands 200 A surge current and dissipates 1500 W pulses, meeting Telcordia GR-1089-CORE Level 3 surge immunity. |
Use Scenario: Protecting isolated gate driver enable lines in 3-phase inverters from cross-talk and ground bounce during high-dI/dt switching. IC Role / Device Role / Timing Role: TVS placed on logic-level signal path between controller and gate driver IC to suppress sub-100 ns ringing and overshoot. Use Value: Low capacitance and fast clamping prevent false triggering of gate drivers while preserving PWM timing accuracy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ58A-E3/52 | DO-214AA (SMB) package; lower PPPM = 600 W; VBR = 64.4–71.2 V; VC = 93.6 V @ 6.4 A | Compact surface-mount alternative for space-constrained PCBs; unsuitable for 1500 W surge events | Select when board area is critical and surge energy is limited to IEC 61000-4-5 Level 2 (1 kV/2 kA) |
| 1.5KE56AHE3_A | Same 1.5KE package and electrical specs; HE3_A suffix indicates earlier revision (Class 1A whisker test vs. Class 2) | Identical performance in automotive and industrial use; differs only in whisker test compliance level | Prefer 1N6289AHE3_B/C for new designs requiring JESD 201 Class 2 reliability in extended-temperature environments |
Compared with SMBJ58A-E3/52, the 1N6289AHE3_B/C delivers 2.5× higher surge power handling and tighter VC margin, making it suitable for harsher transients; versus 1.5KE56AHE3_A, it offers enhanced whisker resistance for long-life deployments without sacrificing electrical performance.
Availability
1N6289AHE3_B/C is available at Aetrix Electronics and suitable for automotive power distribution, industrial sensor interfaces, telecom DC inputs, and motor drive signal protection requiring stable component supply and full AEC-Q101 traceability.
Supply support for 1N6289AHE3_B/C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability, power efficiency, and automotive-grade qualification.
The 1N6289AHE3_B/C belongs to Vishay's TRANSZORB® TVS family, engineered specifically for high-energy transient suppression in demanding environments where clamping speed, power density, and long-term stability are critical.
FAQ
What is the breakdown voltage tolerance for 1N6289AHE3_B/C?
The 1N6289AHE3_B/C has a specified breakdown voltage range of 53.2 V to 58.8 V at 1.0 mA test current, representing a ±5% tolerance around the nominal 56 V rating. This tight VBR window ensures consistent clamping onset across production lots and supports reliable overvoltage margining in 48 V systems. The 1N6289AHE3_B/C datasheet (Vishay Doc #88301) confirms this range under TA = 25 °C conditions.
Is 1N6289AHE3_B/C AEC-Q101 qualified?
Yes, the 1N6289AHE3_B/C is AEC-Q101 qualified per Vishay Document #88301 (Rev. 09-Aug-2022), specifically under the HE3_B suffix designation. Qualification covers temperature cycling, high-temperature operating life, and mechanical shock testing required for automotive under-hood and chassis applications. The 1N6289AHE3_B/C meets JESD 201 Class 2 whisker resistance, distinguishing it from commercial-grade variants.
What is the clamping voltage of 1N6289AHE3_B/C at its rated peak pulse current?
The 1N6289AHE3_B/C clamps to a maximum of 77.0 V at its rated peak pulse current of 19.5 A (10/1000 µs waveform). This value is measured per standard test conditions in Vishay's datasheet and reflects the actual voltage seen by downstream components during worst-case transient events. The low clamping ratio (VC/VBR ≈ 1.33) makes the 1N6289AHE3_B/C especially effective for protecting 65 V-rated power stages.
Can 1N6289AHE3_B/C be used in bidirectional configurations?
No, the 1N6289AHE3_B/C is a unidirectional TVS diode, indicated by the "A" suffix and absence of "CA" in its part number. Bidirectional variants (e.g., 1N6289CAHE3_B/C) exist in the same family but are distinct orderables. Using the 1N6289AHE3_B/C in reverse-biased AC applications would result in forward conduction and potential failure; always verify polarity marking - the band denotes the cathode end for correct orientation.
What is the thermal resistance from junction to lead (RθJL) for 1N6289AHE3_B/C?
The 1N6289AHE3_B/C has a typical junction-to-lead thermal resistance (RθJL) of 15.4 °C/W, as specified in Vishay Document #88301. This parameter enables accurate thermal modeling when the device is soldered to PCB copper or mounted to a metal chassis. Combined with its 175 °C max junction temperature, the 1N6289AHE3_B/C supports high-power transient absorption without thermal runaway in properly heatsinked layouts.
1N6289AHE3_B/C Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-201AA, DO-27, Axial
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 47.8V
- Voltage - Breakdown (Min):
- 53.2V
- Voltage - Clamping (Max) @ Ipp:
- 77V
- Current - Peak Pulse (10/1000µs):
- 19.5A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 1.5KE
1N6289AHE3_B/C FAQ
1.How can I place an order for 1N6289AHE3_B/C through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6289AHE3_B/C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6289AHE3_B/C reliable?
The price and inventory of 1N6289AHE3_B/C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6289AHE3_B/C is usually 5 days.
3.What payment methods are accepted for 1N6289AHE3_B/C?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6289AHE3_B/C transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6289AHE3_B/C?
1N6289AHE3_B/C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6289AHE3_B/C order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6289AHE3_B/C?
For technical support, including 1N6289AHE3_B/C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6289AHE3_B/C requirements.
6.How does Aetrix verify that 1N6289AHE3_B/C is sourced from the original manufacturer or authorized distributors?
All 1N6289AHE3_B/C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6289AHE3_B/C meets industry standards.
7.What is the process for return or replacement of 1N6289AHE3_B/C?
All 1N6289AHE3_B/C units undergo pre-shipment inspection (PSI). If there is an issue with 1N6289AHE3_B/C, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6289AHE3_B/C part is unused and in its original packaging.
Return procedure for 1N6289AHE3_B/C:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6289AHE3_B/C Tags
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