Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division 1N6294HE3/54

Part No.:
1N6294HE3/54
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-201AA, DO-27, Axial
Datasheet:
Aetrix1N6294HE3/54.pdf
Description:
TVS DIODE 73.7VWM 131VC 1.5KE
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,695

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

1N6294HE3/54 from Vishay General Semiconductor is a unidirectional Transient Voltage Suppressor (TVS) diode designed for high-energy surge protection in DC power rails and signal lines. It features a 91 V breakdown voltage (VBR = 86.5–95.5 V at 1 mA), 1500 W peak pulse power (10/1000 µs), 125 V maximum clamping voltage at 12 A, and operates across –55 °C to +175 °C junction temperature. It is used to protect MOSFETs, ICs, and sensor interfaces against inductive switching transients and lightning-induced surges.

For engineers reviewing the 1N6294HE3/54 datasheet, 1N6294HE3/54 pinout, 1N6294HE3/54 application, or 1N6294HE3/54 equivalent, this part delivers verified clamping performance, AEC-Q101 qualification (HE3 suffix), RoHS-compliant matte tin leads, and JEDEC 1.5KE package compatibility - critical for automotive power supply protection, industrial I/O conditioning, and telecom line interface design.

Technical Context

This TVS diode employs a glass-passivated silicon junction optimized for fast response (<1 ns) and low incremental surge resistance. Its unidirectional polarity enables cathode-referenced clamping on positive-going transients, with a 77.8 V stand-off voltage (VWM) ensuring reliable blocking during normal operation while maintaining low leakage (<1 µA).

The device is rated for 200 A non-repetitive forward surge current (8.3 ms half-sine), supports 6.5 W steady-state power dissipation on infinite heatsink at 75 °C, and exhibits a temperature coefficient of VBR of +0.106 %/°C - enabling predictable voltage drift over wide thermal ranges in engine control units and motor drives.

Key Specifications

Parameter Value and Actual Design Meaning
Breakdown Voltage VBR86.5–95.5 V at 1 mA - defines precise clamping initiation threshold under transient stress
Stand-off Voltage VWM77.8 V - maximum continuous reverse voltage before leakage exceeds 1 µA
Peak Pulse Power PPPM1500 W (10/1000 µs) - sustains high-energy surges without failure in automotive load-dump events
Maximum Clamping Voltage VC125 V at 12 A IPPM - limits downstream voltage stress to safe levels for 3.3 V/5 V logic interfaces
Operating Temperature Range–55 °C to +175 °C - qualified for under-hood automotive and industrial motor drive environments
Surge Current IFSM200 A (8.3 ms half-sine) - withstands repetitive inductive kickback in relay and solenoid driver circuits
Thermal Resistance RθJL15.4 °C/W - enables efficient heat transfer to PCB copper pour or lead frame in compact layouts

Pinout & Package

1N6294HE3/54 uses the industry-standard JEDEC DO-201AD (Case Style 1.5KE) axial-leaded package. The cathode is marked by a color band on the body; the anode is unmarked. Leads are matte tin-plated and solderable per J-STD-002 and JESD 22-B102.

Pin/Terminal Circuit Role Design Meaning
Anode (unmarked end)Current entry point during forward conductionConnects to ground or low-side reference in unidirectional clamp configurations
Cathode (banded end)Current exit point during reverse-biased clampingConnects to protected line (e.g., 12 V rail or CAN_H) to shunt surge energy to ground

Key Features

Feature Design Value
Glass-passivated chip junctionEnsures stable VBR tolerance and long-term reliability under thermal cycling and humidity stress
AEC-Q101 qualification (HE3 suffix)Validated for automotive applications including powertrain and body electronics per stress test requirements
1500 W peak pulse power (10/1000 µs)Meets ISO 7637-2 Pulse 5a load-dump immunity for 12 V systems without external series impedance
Low clamping ratio (VC/VBR ≈ 1.33)Minimizes voltage overshoot during clamping, reducing risk of latch-up in downstream CMOS ICs
JESD 201 Class 2 whisker resistancePrevents tin whisker growth in high-reliability assemblies operating >10 years at elevated temperatures

Applications

Automotive Power Rail Protection Industrial Sensor Signal Line Protection

Use Scenario: Protecting 12 V battery-fed ECUs from load-dump transients up to 120 V lasting 400 ms.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery rail and input filter capacitor to clamp surges before LDO regulators.

Use Value: Limits peak voltage to ≤125 V at 12 A, preserving regulator input rating and preventing field returns due to overvoltage failure.

Use Scenario: Safeguarding analog outputs of pressure sensors exposed to ESD and cable discharge events in factory automation.

IC Role / Device Role / Timing Role: TVS mounted at connector interface to absorb 8/20 µs surges before signal conditioning op-amps.

Use Value: Sub-1 ns response ensures clamping initiates before ESD pulse couples into sensitive front-end circuitry.

Telecom Line Interface Protection MOSFET Gate Driver Protection

Use Scenario: Shielding RS-485 transceivers connected to outdoor wiring from induced lightning surges.

IC Role / Device Role / Timing Role: Bidirectional variant not applicable; this unidirectional part used on VCC side of isolated DC/DC converter powering transceiver.

Use Value: 77.8 V VWM allows full 48 V nominal operation while clamping transients above 91 V to prevent burnout of isolation barrier components.

Use Scenario: Preventing gate oxide rupture in high-side N-channel MOSFETs driven by microcontrollers during inductive turn-off spikes.

IC Role / Device Role / Timing Role: TVS placed between gate and source to clamp negative-going spikes below –20 V.

Use Value: 125 V clamping at 12 A ensures gate-source voltage stays within ±20 V absolute max rating even during 100 V drain spikes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ90ADO-214AA package (SMB), 90 V VBR, 600 W PPPM, lower clamping (123 V @ 4.3 A)Lower power handling; suited for space-constrained PCBs where 1500 W is not requiredSelect SMBJ90A when board area is limited and surge energy is <50 J; verify thermal derating for repeated pulses.
1.5KE91ASame 1.5KE package, identical VBR/VC specs, but E3 suffix only (commercial grade, no AEC-Q101)Lacks automotive qualification; unsuitable for production vehicles or safety-critical modulesChoose 1.5KE91A only for cost-sensitive industrial prototypes where AEC-Q101 is not mandated.

Compared with 1N6294HE3/54, SMBJ90A offers smaller footprint but reduced surge capacity, while 1.5KE91A matches electrical performance but lacks automotive qualification - making 1N6294HE3/54 the sole option when both high-power clamping and AEC-Q101 compliance are mandatory.

Availability

1N6294HE3/54 is available at Aetrix Electronics and suitable for automotive power distribution, industrial sensor interface, and telecom infrastructure requiring stable component supply with traceable sourcing and lifecycle continuity.

Supply support for 1N6294HE3/54 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, efficiency, and automotive-grade validation.

The 1N6294HE3/54 belongs to Vishay's TRANSZORB® TVS family, engineered specifically for robust transient suppression in harsh environments - targeting automotive, industrial, and telecom applications demanding high pulse power and extended temperature operation.

FAQ

What is the exact breakdown voltage range for 1N6294HE3/54?

The 1N6294HE3/54 has a guaranteed breakdown voltage (VBR) range of 86.5 V to 95.5 V at a test current of 1 mA, measured per JEDEC standard. This tight tolerance ensures consistent clamping behavior across production lots and supports reliable system-level surge margin calculations in designs using the 1N6294HE3/54.

Is 1N6294HE3/54 suitable for automotive applications?

Yes, the HE3 suffix confirms that the 1N6294HE3/54 is AEC-Q101 qualified, meeting stress test requirements for automotive use including temperature cycling, humidity bias, and mechanical shock. It is deployed in engine control units, body controllers, and ADAS power supplies where sustained operation up to +175 °C and load-dump immunity are required - all validated for the 1N6294HE3/54.

How does the clamping voltage of 1N6294HE3/54 compare to its breakdown voltage?

The 1N6294HE3/54 clamps to a maximum of 125 V at 12 A peak pulse current (IPPM), yielding a clamping ratio (VC/VBR) of approximately 1.33. This low ratio reflects efficient junction design and ensures minimal overvoltage stress on downstream components during transient events - a key performance metric confirmed in the official 1N6294HE3/54 datasheet.

What package type does 1N6294HE3/54 use, and is it lead-free?

The 1N6294HE3/54 uses the JEDEC DO-201AD (Case Style 1.5KE) axial-leaded package with matte tin-plated leads. It is RoHS compliant (E3/HE3 designation), fully lead-free, and meets JESD 201 Class 2 whisker resistance - verified for long-term reliability in high-temperature, high-humidity environments where the 1N6294HE3/54 is deployed.

Can 1N6294HE3/54 be used in bidirectional configurations?

No, the 1N6294HE3/54 is a unidirectional TVS diode, identified by the "A" suffix and cathode band marking. For bidirectional protection, Vishay offers the 1N6294CA variant (not 1N6294HE3/54). Using the 1N6294HE3/54 in reverse-biased AC applications would result in forward conduction and potential failure - always confirm polarity alignment per the 1N6294HE3/54 datasheet.

1N6294HE3/54 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-201AA, DO-27, Axial
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
73.7V
Voltage - Breakdown (Min):
81.9V
Voltage - Clamping (Max) @ Ipp:
131V
Current - Peak Pulse (10/1000µs):
11.5A
Power - Peak Pulse:
1500W (1.5kW)
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Through Hole
Supplier Device Package:
1.5KE

1N6294HE3/54 FAQ

1.How can I place an order for 1N6294HE3/54 through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N6294HE3/54 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N6294HE3/54 reliable?

The price and inventory of 1N6294HE3/54 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6294HE3/54 is usually 5 days.

3.What payment methods are accepted for 1N6294HE3/54?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6294HE3/54 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N6294HE3/54?

1N6294HE3/54 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N6294HE3/54 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N6294HE3/54?

For technical support, including 1N6294HE3/54 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6294HE3/54 requirements.

6.How does Aetrix verify that 1N6294HE3/54 is sourced from the original manufacturer or authorized distributors?

All 1N6294HE3/54 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6294HE3/54 meets industry standards.

7.What is the process for return or replacement of 1N6294HE3/54?

All 1N6294HE3/54 units undergo pre-shipment inspection (PSI). If there is an issue with 1N6294HE3/54, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N6294HE3/54 part is unused and in its original packaging.

Return procedure for 1N6294HE3/54:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

1N6294HE3/54 Tags

  • 1N6294HE3/54
  • 1N6294HE3/54 PDF
  • 1N6294HE3/54 Datasheet
  • 1N6294HE3/54 Specifications
  • 1N6294HE3/54 Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division 1N6294HE3/54
  • Buy 1N6294HE3/54
  • 1N6294HE3/54 Price
  • 1N6294HE3/54 Distributor
  • 1N6294HE3/54 Supplier
  • 1N6294HE3/54 Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER