Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division 1N6295AHE3_B/C

Part No.:
1N6295AHE3_B/C
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-201AA, DO-27, Axial
Datasheet:
Aetrix1N6295AHE3_B/C.pdf
Description:
1.5KW,100V 5%,UNIDIR,AXIAL TVS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,286

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

1N6295AHE3_B/C from Vishay General Semiconductor is a unidirectional Transient Voltage Suppressor (TVS) diode designed for primary overvoltage protection in power rails and signal lines. It features a 95.0 V to 105 V breakdown voltage (VBR), 85.5 V maximum standoff voltage (VWM), 137 V clamping voltage at 10.9 A peak pulse current, 1500 W peak pulse power rating with 10/1000 µs waveform, and operates across –55 °C to +175 °C junction temperature range - used in automotive power supply input stages and industrial sensor interface protection.

For engineers reviewing the 1N6295AHE3_B/C datasheet, 1N6295AHE3_B/C pinout, 1N6295AHE3_B/C application, or 1N6295AHE3_B/C equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance data, JEDEC 1.5KE package dimensions, and direct alternative part comparisons for robust ESD and surge protection design-in.

Technical Context

This unidirectional TVS diode uses a glass passivated silicon junction optimized for fast transient response (<1 ns) and low incremental surge resistance. Its clamping behavior is defined by a 10/1000 µs pulse waveform with 0.01 % duty cycle, and it exhibits a temperature coefficient of VBR of +0.106 %/°C.

The device supports 200 A non-repetitive forward surge current (IFSM) at 8.3 ms half-sine, dissipates 6.5 W on infinite heatsink at TL = 75 °C, and maintains 1.0 µA max reverse leakage at VWM. Its RθJA is 75 °C/W and RθJL is 15.4 °C/W, confirming suitability for lead-mounted PCB-level surge suppression without active cooling.

Key Specifications

Parameter Value and Actual Design Meaning
VBR (min/max) 95.0 V / 105 V - ensures reliable conduction onset above normal operating voltage while avoiding false triggering
VWM 85.5 V - maximum continuous working voltage before leakage exceeds 1.0 µA, compatible with 72–80 V DC bus systems
VC @ IPPM 137 V - clamping voltage at 10.9 A peak pulse, limiting downstream IC stress during 1.5 kW transients
PPPM 1500 W - peak pulse power handling per 10/1000 µs waveform, meeting IEC 61000-4-5 Level 4 surge immunity
TJ Range –55 °C to +175 °C - enables deployment in under-hood automotive and industrial motor drive environments
AEC-Q101 Qualified - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing
Package JEDEC 1.5KE - axial-lead molded epoxy case (0.375" lead length), UL 94 V-0 rated, RoHS compliant

Pinout & Package

JEDEC 1.5KE package: axial-leaded, molded epoxy body with cathode band marking; matte tin-plated leads compliant with J-STD-002 and JESD 22-B102 solderability standards. Dimensions: 1.0" (25.4 mm) body length min., 0.375" (9.5 mm) lead length, 0.210"–0.285" (5.3–7.2 mm) body diameter.

Pin/Terminal Circuit Role Design Meaning
Anode Current entry point in forward bias Connected to protected circuit ground or low-side return path during clamping
Cathode (banded end) Current exit point in forward bias; high-impedance terminal in reverse standby Connected to line/voltage rail being protected; initiates avalanche conduction when VRM exceeded

Key Features

Feature Design Value
Glass passivated junction Enables stable VBR tolerance and long-term leakage stability under thermal cycling
1500 W 10/1000 µs pulse rating Supports IEC 61000-4-5 surge testing up to 4 kV open-circuit voltage with coupling network
0.106 %/°C VBR tempco Minimizes drift across automotive temperature range, ensuring consistent clamping threshold
AEC-Q101 qualified (HE3_B suffix) Validated for automotive powertrain and body electronics per stress test requirements
UL 94 V-0 molding compound Meets flammability safety requirement for enclosed industrial and transportation equipment

Applications

Automotive Power Input Protection Industrial Sensor Signal Line Clamp

Use Scenario: 12 V/24 V battery-fed ECUs exposed to load dump (ISO 16750-2) and jump-start surges.

IC Role / Device Role / Timing Role: Primary shunt clamp placed between battery rail and DC-DC converter input.

Use Value: Limits transient voltage to ≤137 V, preventing damage to 40 V-rated input MOSFETs and controller ICs.

Use Scenario: 4–20 mA analog sensor loop in factory automation subject to inductive switching noise.

IC Role / Device Role / Timing Role: Bidirectional-capable unidirectional TVS placed across signal and return lines near connector.

Use Value: Clamps common-mode transients to <140 V within <1 ns, preserving 12-bit ADC accuracy and isolator integrity.

Telecom AC/DC Adapter Surge Guard Consumer Appliance Motor Drive Bus Clamp

Use Scenario: Secondary-side 48 V output of telecom SMPS subjected to lightning-induced surges via Ethernet or PoE lines.

IC Role / Device Role / Timing Role: Unidirectional TVS connected from output rail to chassis ground, upstream of LDO regulators.

Use Value: Absorbs 1500 W pulses without degradation, maintaining regulated output during EN 61000-4-5 testing.

Use Scenario: DC bus in BLDC motor control module experiencing commutation spikes and back-EMF reversal.

IC Role / Device Role / Timing Role: TVS mounted directly across H-bridge DC link capacitor terminals.

Use Value: Suppresses >100 V spikes within nanoseconds, reducing gate driver fault rate and extending MOSFET lifetime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ85AHE3/52 Lower PPPM (600 W), smaller SMB package (surface-mount), VBR = 94.4–104.4 V, VC = 137 V @ 4.4 A Not AEC-Q101 qualified; suited for space-constrained consumer PCBs, not under-hood automotive Select when board area is limited and surge energy is ≤600 W; requires re-layout due to SMD footprint
1.5KE100AHE3_A Same 1.5KE package and core specs, but HE3_A revision lacks AEC-Q101 certification per Doc. 88301 Note (2) Approved for commercial/industrial use only; excluded from automotive production BOMs requiring Q101 traceability Acceptable for cost-sensitive industrial controls where automotive qualification is not mandated

Compared with 1N6295AHE3_B/C, SMBJ85AHE3/52 trades peak power and qualification for compactness, while 1.5KE100AHE3_A matches form/fit/function but omits AEC-Q101 validation - making 1N6295AHE3_B/C the sole choice for automotive Tier-1 power rail protection requiring full compliance traceability.

Availability

1N6295AHE3_B/C is available at Aetrix Electronics and suitable for automotive electronic control units, industrial programmable logic controllers, and telecom power supply designs requiring stable component supply with full AEC-Q101 documentation and lot-level traceability.

Supply support for 1N6295AHE3_B/C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability and automotive-grade qualification.

The 1N6295AHE3_B/C belongs to the TRANSZORB® 1.5KE family, engineered specifically for high-energy transient suppression in harsh-environment power systems where failure is not an option.

FAQ

What is the clamping voltage of the 1N6295AHE3_B/C and how is it measured?

The 1N6295AHE3_B/C has a maximum clamping voltage (VC) of 137 V, measured at its rated peak pulse current (IPPM) of 10.9 A using a standardized 10/1000 µs double-exponential waveform. This value reflects the voltage seen across the 1N6295AHE3_B/C terminals during worst-case surge events and is critical for ensuring downstream components remain within their absolute maximum ratings.

Is the 1N6295AHE3_B/C suitable for automotive applications?

Yes - the 1N6295AHE3_B/C carries the HE3_B suffix, indicating full AEC-Q101 qualification per Vishay Document 88301 Note (2). It has undergone temperature cycling, highly accelerated life testing (HALT), and ESD validation required for under-hood and powertrain modules, making it appropriate for production automotive use where reliability is mandated.

How does the 1N6295AHE3_B/C differ from the standard 1N6295A?

The 1N6295AHE3_B/C adds RoHS compliance (E3), AEC-Q101 qualification (HE3_B), and enhanced whisker resistance (JESD 201 Class 2) versus the base 1N6295A. The "_B/C" denotes tape-and-reel packaging (1400 pcs per 13" reel), whereas the base part lacks automotive qualification and may ship in bulk or different packaging formats.

What is the thermal resistance of the 1N6295AHE3_B/C and why does it matter?

The 1N6295AHE3_B/C has a typical junction-to-ambient thermal resistance (RθJA) of 75 °C/W and junction-to-lead resistance (RθJL) of 15.4 °C/W. These values determine how effectively heat from surge dissipation transfers to the PCB and ambient air - critical for sustaining repeated 1500 W pulses without exceeding the 175 °C maximum junction temperature.

Can the 1N6295AHE3_B/C be used in bidirectional configurations?

No - the 1N6295AHE3_B/C is a unidirectional TVS diode, identified by its cathode band marking and specified VBR/VWM values for reverse-bias operation only. For bidirectional protection, Vishay offers the 1N6295CAHE3_B/C variant (not this part), which provides symmetrical clamping in both polarities and no polarity marking.

1N6295AHE3_B/C Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-201AA, DO-27, Axial
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
85.5V
Voltage - Breakdown (Min):
95V
Voltage - Clamping (Max) @ Ipp:
137V
Current - Peak Pulse (10/1000µs):
10.9A
Power - Peak Pulse:
1500W (1.5kW)
Power Line Protection:
No
Applications:
Telecom
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Through Hole
Supplier Device Package:
1.5KE

1N6295AHE3_B/C FAQ

1.How can I place an order for 1N6295AHE3_B/C through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N6295AHE3_B/C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N6295AHE3_B/C reliable?

The price and inventory of 1N6295AHE3_B/C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6295AHE3_B/C is usually 5 days.

3.What payment methods are accepted for 1N6295AHE3_B/C?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6295AHE3_B/C transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N6295AHE3_B/C?

1N6295AHE3_B/C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N6295AHE3_B/C order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N6295AHE3_B/C?

For technical support, including 1N6295AHE3_B/C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6295AHE3_B/C requirements.

6.How does Aetrix verify that 1N6295AHE3_B/C is sourced from the original manufacturer or authorized distributors?

All 1N6295AHE3_B/C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6295AHE3_B/C meets industry standards.

7.What is the process for return or replacement of 1N6295AHE3_B/C?

All 1N6295AHE3_B/C units undergo pre-shipment inspection (PSI). If there is an issue with 1N6295AHE3_B/C, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N6295AHE3_B/C part is unused and in its original packaging.

Return procedure for 1N6295AHE3_B/C:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

1N6295AHE3_B/C Tags

  • 1N6295AHE3_B/C
  • 1N6295AHE3_B/C PDF
  • 1N6295AHE3_B/C Datasheet
  • 1N6295AHE3_B/C Specifications
  • 1N6295AHE3_B/C Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division 1N6295AHE3_B/C
  • Buy 1N6295AHE3_B/C
  • 1N6295AHE3_B/C Price
  • 1N6295AHE3_B/C Distributor
  • 1N6295AHE3_B/C Supplier
  • 1N6295AHE3_B/C Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER