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Vishay General Semiconductor - Diodes Division 1N6297AHE3_B/C
- Part No.:
- 1N6297AHE3_B/C
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-201AA, DO-27, Axial
- Datasheet:
-
1N6297AHE3_B/C.pdf
- Description:
- 1.5KW,120V 5%,UNIDIR,AXIAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:3,452
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Product details
Overview
1N6297AHE3_B/C from Vishay General Semiconductor is a unidirectional Transient Voltage Suppressor (TVS) diode designed for primary-side overvoltage protection in power rails and signal lines. It features a 120 V breakdown voltage (VBR = 114–126 V at 1 mA), 102 V maximum working voltage (VWM), 165 V clamping voltage (VC) at 9.1 A peak pulse current, and 1500 W peak pulse power rating with 10/1000 µs waveform - used to safeguard MOSFETs, ICs, and sensor interfaces against lightning-induced surges and inductive switching transients.
For engineers reviewing the 1N6297AHE3_B/C datasheet, 1N6297AHE3_B/C pinout, 1N6297AHE3_B/C application, or 1N6297AHE3_B/C equivalent, this device is evaluated for robust transient suppression in automotive power distribution modules, industrial PLC I/O protection, and telecom line interface circuits where AEC-Q101 qualification, low clamping ratio, and stable thermal performance up to 175 °C junction temperature are required.
Technical Context
This TVS diode operates as a silicon avalanche clamp, responding in <1 ns to transient overvoltages and diverting surge current away from protected circuitry via its low incremental surge resistance. Its glass-passivated junction ensures stable VBR tolerance (±5 %) and repeatable clamping behavior under repetitive 10/1000 µs pulses at 0.01 % duty cycle.
The 1N6297AHE3_B/C is rated for 200 A non-repetitive forward surge current (IFSM) and exhibits a maximum reverse leakage of 1 µA at VWM, enabling low standby power loss in always-on protection schemes. Its thermal resistance (RθJL = 15.4 °C/W) supports reliable operation when mounted on PCB copper pours or leads with ≥0.375" (9.5 mm) length.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 114 V / 126 V at 1 mA - defines precise avalanche onset threshold for predictable clamping initiation |
| VWM | 102 V - maximum continuous DC or RMS voltage the device blocks without leakage exceeding 1 µA |
| VC @ IPPM | 165 V at 9.1 A - clamping voltage during 1500 W transient, limiting downstream stress to safe levels |
| PPPM | 1500 W - peak pulse power handling capability with 10/1000 µs waveform, validated per JEDEC standards |
| TJ max. | +175 °C - enables use in under-hood automotive and high-ambient industrial environments |
| IFSM | 200 A - single half-sine surge rating (8.3 ms), supporting protection against high-energy inductive kickback |
| RθJL | 15.4 °C/W - low junction-to-lead thermal resistance allows effective heat dissipation through PCB traces or heatsinks |
Pinout & Package
Package: Case Style 1.5KE - molded epoxy body with matte tin-plated leads, RoHS-compliant and AEC-Q101 qualified (HE3 suffix). Dimensions: 0.375" (9.5 mm) lead length, 0.210" × 0.190" (5.3 mm × 4.8 mm) body cross-section, 0.042" (1.07 mm) lead diameter.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point during forward conduction | Connected to ground or low-side reference in unidirectional clamp configuration |
| Cathode | Current exit point during forward conduction; marked by color band | Connected to protected line (e.g., +12 V rail); conducts surge current to ground when VIN exceeds VBR |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Ensures ±5 % VBR tolerance and long-term stability under thermal cycling and humidity exposure |
| 1500 W peak pulse power (10/1000 µs) | Supports IEC 61000-4-5 Level 4 surge immunity (4 kV line-earth) without derating in standard layouts |
| AEC-Q101 qualified (HE3_B/C) | Validated for automotive powertrain and body electronics applications requiring zero defect reliability |
| Low clamping ratio (VC/VBR ≈ 1.38) | Minimizes overvoltage overshoot during fast transients, reducing risk of gate oxide rupture in protected MOSFETs |
| 1 µA max reverse leakage @ VWM | Enables use in battery-backed or energy-harvesting systems where quiescent current must remain sub-µA |
Applications
| Automotive Power Distribution | Industrial PLC Digital I/O |
|---|---|
Use Scenario: Protection of 12 V/24 V supply rails in engine control units (ECUs) against load dump and alternator transients. IC Role / Device Role: Primary overvoltage clamp placed between battery input and upstream DC-DC converter input. Use Value: Clamps 120 V transients to ≤165 V within 1 ns, preventing damage to buck controller ICs rated for 36 V absolute max input. |
Use Scenario: Input protection for 24 V digital inputs on programmable logic controller (PLC) modules exposed to field wiring surges. IC Role / Device Role: Unidirectional TVS connected between input terminal and common ground, shunting induced lightning energy. Use Value: Withstands repeated 1 kV/500 A surges per IEC 61000-4-5 while maintaining <1 µA leakage at 24 V nominal operation. |
| Telecom Line Interface | Consumer Appliance Motor Control |
Use Scenario: Surge protection on POTS (Plain Old Telephone Service) line interface cards in VoIP gateways. IC Role / Device Role: Secondary protection stage after gas discharge tube (GDT), absorbing residual energy from 10/700 µs telecom surges. Use Value: Low VC/VBR ratio ensures line voltage stays below 165 V during ring-trip events, preserving codec IC integrity. |
Use Scenario: Protection of microcontroller GPIOs and gate drivers in washing machine motor inverters subjected to brush-commutator noise. IC Role / Device Role: Local clamp across H-bridge high-side driver supply pins to suppress inductive spikes from motor windings. Use Value: Fast response (<1 ns) prevents latch-up in 3.3 V logic ICs; AEC-Q101 qualification supports extended product lifetime in harsh appliance environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ120A-E3/52 | DO-214AA package (smaller footprint), 120 V VBR, 1000 W PPPM, higher VC/VBR ratio (1.45) | Limited to lower-energy surges; unsuitable for IEC 61000-4-5 Level 4 without parallel staging | Select when board space is constrained and peak surge energy is ≤1000 W; verify thermal margin with RθJA = 50 °C/W |
| 1.5KE120AHE3_A | Same 1.5KE package and electrical specs, but HE3_A revision lacks AEC-Q101 qualification per note (2) in datasheet | Not approved for automotive safety-critical modules requiring AEC-Q101 compliance | Acceptable for commercial/industrial use where qualification is not mandated; avoid in automotive OEM designs |
Compared with 1N6297AHE3_B/C, SMBJ120A-E3/52 offers smaller size but reduced surge capacity and thermal robustness, while 1.5KE120AHE3_A matches form-fit-function but omits AEC-Q101 validation - making 1N6297AHE3_B/C the only choice for automotive-grade 1500 W clamping with full qualification traceability.
Availability
1N6297AHE3_B/C is available at Aetrix Electronics and suitable for automotive ECU protection, industrial PLC I/O hardening, and telecom line interface surge suppression requiring stable component supply across multi-year production cycles.
Supply support for 1N6297AHE3_B/C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for demanding industrial and automotive applications.
The 1N6297AHE3_B/C belongs to Vishay's TRANSZORB® TVS family, engineered specifically for high-power transient suppression in harsh environments where fast response, stable clamping, and AEC-Q101 reliability are mandatory.
FAQ
What is the breakdown voltage tolerance of the 1N6297AHE3_B/C?
The 1N6297AHE3_B/C has a breakdown voltage (VBR) range of 114 V to 126 V at 1 mA test current, corresponding to a ±5 % tolerance. This tight specification is achieved via glass passivation and precision wafer-level sorting, ensuring consistent clamping behavior across production lots and temperature ranges from –55 °C to +175 °C.
Is the 1N6297AHE3_B/C suitable for bidirectional transient protection?
No, the 1N6297AHE3_B/C is a unidirectional TVS diode, indicated by the "A" suffix and cathode band marking. For bidirectional protection, Vishay specifies part numbers ending in "CA" (e.g., 1.5KE120CA). Using 1N6297AHE3_B/C in reverse-biased configurations risks permanent failure due to lack of symmetric avalanche structure.
How does the AEC-Q101 qualification impact the use of 1N6297AHE3_B/C in automotive designs?
The AEC-Q101 qualification of 1N6297AHE3_B/C confirms it has passed stress tests including HTGB, HTRB, TCT, and mechanical shock - validating suitability for automotive powertrain, chassis, and body electronics. This certification is mandatory for Tier 1 suppliers and OEMs requiring zero-defect reliability in safety-related subsystems.
What is the maximum clamping voltage of the 1N6297AHE3_B/C under surge conditions?
The 1N6297AHE3_B/C clamps to a maximum of 165 V when subjected to its rated 9.1 A peak pulse current (IPPM) with a 10/1000 µs waveform. This value is measured per JEDEC standard and represents worst-case overvoltage seen by downstream components during a full 1500 W transient event.
Can the 1N6297AHE3_B/C be used in parallel to increase surge handling capacity?
Yes, multiple 1N6297AHE3_B/C devices can be paralleled to distribute surge current, but matching VBR (within ±2 %) and symmetrical PCB layout (equal trace inductance) are essential to ensure current sharing. Derating total PPPM by 15 % per additional device is recommended to account for thermal coupling and parameter spread.
1N6297AHE3_B/C Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-201AA, DO-27, Axial
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 102V
- Voltage - Breakdown (Min):
- 114V
- Voltage - Clamping (Max) @ Ipp:
- 165V
- Current - Peak Pulse (10/1000µs):
- 9.1A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 1.5KE
1N6297AHE3_B/C FAQ
1.How can I place an order for 1N6297AHE3_B/C through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6297AHE3_B/C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6297AHE3_B/C reliable?
The price and inventory of 1N6297AHE3_B/C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6297AHE3_B/C is usually 5 days.
3.What payment methods are accepted for 1N6297AHE3_B/C?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6297AHE3_B/C transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6297AHE3_B/C?
1N6297AHE3_B/C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6297AHE3_B/C order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6297AHE3_B/C?
For technical support, including 1N6297AHE3_B/C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6297AHE3_B/C requirements.
6.How does Aetrix verify that 1N6297AHE3_B/C is sourced from the original manufacturer or authorized distributors?
All 1N6297AHE3_B/C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6297AHE3_B/C meets industry standards.
7.What is the process for return or replacement of 1N6297AHE3_B/C?
All 1N6297AHE3_B/C units undergo pre-shipment inspection (PSI). If there is an issue with 1N6297AHE3_B/C, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6297AHE3_B/C part is unused and in its original packaging.
Return procedure for 1N6297AHE3_B/C:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6297AHE3_B/C Tags
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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