Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division 1N6298A-E3/54

Part No.:
1N6298A-E3/54
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-201AA, DO-27, Axial
Datasheet:
Aetrix1N6298A-E3/54.pdf
Description:
TVS DIODE
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,354

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

1N6298A-E3/54 from Vishay General Semiconductor is a unidirectional Transient Voltage Suppressor (TVS) diode designed for primary-side overvoltage protection in DC power rails and signal lines. It features a 130 V breakdown voltage (VBR = 124–137 V), 111 V maximum working voltage (VWM), 179 V clamping voltage at 8.4 A peak pulse current, and 1500 W peak pulse power rating with 10/1000 µs waveform - used to safeguard MOSFETs, ICs, and sensor interfaces in industrial power supplies and automotive control modules.

For engineers reviewing the 1N6298A-E3/54 datasheet, 1N6298A-E3/54 pinout, 1N6298A-E3/54 application, or 1N6298A-E3/54 equivalent, this part delivers verified transient suppression performance in high-energy surge environments where fast response (<1 ns), low clamping ratio (VC/VWM ≈ 1.61), and AEC-Q101-qualified reliability are required.

Technical Context

This unidirectional TVS diode operates as a voltage-clamped shunt protector: it remains high-impedance below VWM (111 V), then avalanches sharply at VBR (min 124 V, max 137 V) to divert surge current away from downstream circuitry. Its glass-passivated junction ensures stable breakdown characteristics and low leakage (<1 µA at VWM).

It handles non-repetitive 10/1000 µs surges up to 8.4 A (IPPM), with clamping voltage VC = 179 V - limiting voltage stress on protected devices. Thermal resistance is RθJA = 75 °C/W and RθJL = 15.4 °C/W, supporting lead-mounted dissipation of 6.5 W at TL = 75 °C.

Key Specifications

Parameter Value and Actual Design Meaning
Breakdown Voltage VBR124–137 V at 1.0 mA test current - defines precise avalanche initiation threshold for reliable overvoltage triggering
Stand-off Voltage VWM111 V maximum - ensures no conduction during normal 110 VDC rail operation, minimizing standby leakage
Clamping Voltage VC179 V at 8.4 A IPPM - limits transient voltage seen by protected ICs to safe margin below absolute maximum ratings
Peak Pulse Power PPPM1500 W (10/1000 µs) - sustains high-energy lightning-induced surges without failure
Peak Pulse Current IPPM8.4 A - quantifies maximum surge current the device can safely shunt per event
Maximum Leakage ID<1 µA at VWM - prevents measurable power loss or false triggering in low-power circuits
Junction Temperature Range–55 °C to +175 °C - supports operation in under-hood automotive and industrial ambient extremes

Pinout & Package

Package: Case Style 1.5KE - molded epoxy body with matte tin-plated leads; RoHS-compliant (E3 suffix); 0.375" (9.5 mm) lead length; UL 94 V-0 rated.

Pin/Terminal Circuit Role Design Meaning
AnodeLow-side reference terminalConnected to ground or low-voltage return path; defines cathode-referenced clamping behavior
CathodeHigh-side surge input terminalConnected to protected line (e.g., 110 VDC bus); color band denotes this end per JEDEC standard

Key Features

Feature Design Value
Glass-passivated junctionEnsures stable VBR tolerance (±5%), low leakage, and long-term reliability under thermal cycling
1500 W peak pulse powerWithstands IEC 61000-4-5 Level 4 (4 kV) surges on 110 VDC systems without degradation
Sub-nanosecond response timeClamps transients within <1 ns - faster than MOVs or polymer-based protectors, preserving signal integrity
AEC-Q101 qualified option availableHE3 variant meets automotive-grade stress testing (temperature cycling, HTRB, etc.) for engine control units
Low incremental surge resistanceMinimizes voltage overshoot during fast-rising transients (e.g., inductive switch-off spikes)

Applications

Industrial Power Supply Protection Automotive Body Control Module

Use Scenario: 110 VDC input stage of programmable logic controller (PLC) power supply exposed to load dump and inductive switching noise.

IC Role / Device Role: Primary shunt TVS placed between input rail and chassis ground to clamp surges before they reach DC-DC converter ICs.

Use Value: Limits transient voltage to ≤179 V, preventing damage to 200 V-rated input capacitors and 150 V MOSFETs in the front-end rectifier stage.

Use Scenario: LIN bus interface in door module subjected to ESD and battery reverse-polarity events during service.

IC Role / Device Role: Unidirectional TVS on LIN data line referenced to vehicle ground, protecting transceiver IC inputs.

Use Value: Clamps 10/1000 µs surges to 179 V while maintaining <1 µA leakage at 12 V nominal - avoids false wake-up or communication errors.

Telecom Remote Terminal Unit Renewable Energy Inverter DC Link

Use Scenario: Outdoor DSLAM cabinet powered via PoE++ or remote 48 VDC feed, vulnerable to induced lightning surges on copper pairs.

IC Role / Device Role: First-stage TVS on DC input rail upstream of DC-DC isolation stage.

Use Value: Absorbs 1500 W surges without thermal runaway; RθJL = 15.4 °C/W enables direct PCB trace heatsinking without extra copper pour.

Use Scenario: DC link between PV array and MPPT controller in solar microinverter, subject to rapid voltage transients during partial shading transitions.

IC Role / Device Role: Bidirectional-capable unidirectional TVS (used anode-grounded) across DC+ and DC− to suppress common-mode surges.

Use Value: Withstands repetitive 8.4 A pulses at 0.01% duty cycle - protects 600 V IGBT gate drivers from overvoltage latch-up.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ130ASame VWM (111 V) and VC (179 V), but lower PPPM (600 W) and smaller SMB package (RθJA = 110 °C/W)Suitable only for lower-energy surges (IEC 61000-4-5 Level 2); not recommended for 110 VDC industrial mains inputSelect 1N6298A-E3/54 when 1500 W surge handling and lead-mounted thermal performance are mandatory.
1.5KE130AIdentical electrical specs and case style; differs only in packaging (bulk vs. tape-and-reel E3/54) and marking conventionNo functional difference; both meet same JEDEC 1.5KE mechanical and electrical standards1N6298A-E3/54 is the exact same device as 1.5KE130A - dual-marking per Vishay's cross-reference table (Document 88301, p.2).

Compared with SMBJ130A, 1N6298A-E3/54 provides 2.5× higher surge power margin and superior thermal dissipation for sustained surge events; compared with 1.5KE130A, it is functionally identical but supplied in 13" paper tape (54 per reel) with RoHS-compliant E3 finish - enabling automated SMT placement and traceable sourcing.

Availability

1N6298A-E3/54 is available at Aetrix Electronics and suitable for industrial power supplies, automotive body electronics, telecom remote terminals, and renewable energy inverters requiring stable component supply and full traceability.

Supply support for 1N6298A-E3/54 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and application-specific performance.

The 1N6298A-E3/54 belongs to Vishay's TRANSZORB® TVS family - engineered for robust, high-power transient suppression in harsh environments including automotive, industrial, and telecom infrastructure.

FAQ

What is the breakdown voltage tolerance of the 1N6298A-E3/54?

The 1N6298A-E3/54 has a specified breakdown voltage range of 124 V to 137 V at 1.0 mA test current, representing a ±5% tolerance around the nominal 130 V rating. This tight VBR window ensures consistent clamping behavior across production lots and supports predictable system-level surge margin design without over-engineering downstream protection.

Is the 1N6298A-E3/54 suitable for automotive applications?

The 1N6298A-E3/54 itself is commercial-grade; however, its AEC-Q101-qualified variant - 1N6298AHE3_B - is explicitly certified for automotive use. Engineers designing for under-hood or body control modules should specify the HE3_B suffix version to ensure compliance with temperature cycling, humidity bias, and high-temperature reverse bias requirements defined in AEC-Q101.

How does the clamping voltage of the 1N6298A-E3/54 compare to its working voltage?

The 1N6298A-E3/54 clamps at 179 V (VC) when subjected to its rated 8.4 A peak pulse current, while its maximum working voltage (VWM) is 111 V. This yields a clamping ratio of ~1.61, indicating efficient voltage limiting - critical for protecting 200 V-rated components without excessive derating or cascaded protection stages.

What is the thermal resistance of the 1N6298A-E3/54 and how does it affect layout?

The 1N6298A-E3/54 has a typical junction-to-lead thermal resistance (RθJL) of 15.4 °C/W and junction-to-ambient (RθJA) of 75 °C/W. This means effective heat removal relies primarily on copper traces connected to its leads - not just pad area. Layouts should use ≥0.5 mm wide, 2 oz copper traces extending ≥10 mm from each lead to act as thermal vias and heatsinks.

Can the 1N6298A-E3/54 be used in bidirectional configurations?

No - the 1N6298A-E3/54 is a unidirectional TVS diode, identifiable by its cathode band marking. For bidirectional protection at comparable voltage levels, Vishay offers the 1N6298CA (or 1.5KE130CA), which provides symmetrical clamping in both polarities. Using the unidirectional 1N6298A-E3/54 in reverse-biased AC applications risks permanent failure due to forward conduction.

1N6298A-E3/54 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-201AA, DO-27, Axial
Series:
TransZorb®
Packaging:
Bulk
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
111V
Voltage - Breakdown (Min):
124V
Voltage - Clamping (Max) @ Ipp:
179V
Current - Peak Pulse (10/1000µs):
8.4A
Power - Peak Pulse:
1500W (1.5kW)
Power Line Protection:
No
Applications:
Telecom
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Through Hole
Supplier Device Package:
1.5KE

1N6298A-E3/54 FAQ

1.How can I place an order for 1N6298A-E3/54 through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N6298A-E3/54 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N6298A-E3/54 reliable?

The price and inventory of 1N6298A-E3/54 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6298A-E3/54 is usually 5 days.

3.What payment methods are accepted for 1N6298A-E3/54?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6298A-E3/54 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N6298A-E3/54?

1N6298A-E3/54 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N6298A-E3/54 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N6298A-E3/54?

For technical support, including 1N6298A-E3/54 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6298A-E3/54 requirements.

6.How does Aetrix verify that 1N6298A-E3/54 is sourced from the original manufacturer or authorized distributors?

All 1N6298A-E3/54 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6298A-E3/54 meets industry standards.

7.What is the process for return or replacement of 1N6298A-E3/54?

All 1N6298A-E3/54 units undergo pre-shipment inspection (PSI). If there is an issue with 1N6298A-E3/54, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N6298A-E3/54 part is unused and in its original packaging.

Return procedure for 1N6298A-E3/54:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

1N6298A-E3/54 Tags

  • 1N6298A-E3/54
  • 1N6298A-E3/54 PDF
  • 1N6298A-E3/54 Datasheet
  • 1N6298A-E3/54 Specifications
  • 1N6298A-E3/54 Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division 1N6298A-E3/54
  • Buy 1N6298A-E3/54
  • 1N6298A-E3/54 Price
  • 1N6298A-E3/54 Distributor
  • 1N6298A-E3/54 Supplier
  • 1N6298A-E3/54 Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER