My Inquiry
My Account
Vishay General Semiconductor - Diodes Division 1N6298AHE3_B/C
- Part No.:
- 1N6298AHE3_B/C
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-201AA, DO-27, Axial
- Datasheet:
-
1N6298AHE3_B/C.pdf
- Description:
- 1.5KW,130V 5%,UNIDIR,AXIAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,359
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N6298AHE3_B/C from Vishay General Semiconductor is a unidirectional Transient Voltage Suppressor (TVS) diode designed for primary-level overvoltage protection in power rails and signal lines. It features a 130 V breakdown voltage (VBR min/max: 124 V / 137 V), 111 V standoff voltage (VWM), 179 V clamping voltage (VC) at 8.4 A peak pulse current, 1500 W peak pulse power (10/1000 µs), and operates across –55 °C to +175 °C junction temperature range - deployed in automotive ECUs, industrial I/O modules, and telecom power supplies.
For engineers reviewing the 1N6298AHE3_B/C datasheet, 1N6298AHE3_B/C pinout, 1N6298AHE3_B/C application, or 1N6298AHE3_B/C equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance (RθJL = 15.4 °C/W), JEDEC 1.5KE package dimensions, and direct alternative part comparisons - all validated against Vishay Document #88301 (Rev. 09-Aug-2022).
Technical Context
This unidirectional TVS diode uses a glass-passivated silicon junction to achieve sub-nanosecond response time (<1 ns) and low incremental surge resistance. Its clamping action begins at 124 V (VBR min), holds below 179 V up to 8.4 A (10/1000 µs), and maintains stable performance under repetitive transients with 0.01% duty cycle.
Designed for placement across DC power inputs or low-speed signal lines, it provides fail-safe protection without leakage degradation: maximum reverse leakage is 1.0 µA at 111 V (VWM), and forward voltage is 3.5 V at 100 A - compatible with standard PCB layout practices for high-energy surge suppression.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 124 V / 137 V - ensures reliable triggering above normal operating voltage while avoiding false trips during line tolerance excursions |
| VWM | 111 V - maximum continuous working voltage; defines safe DC or RMS AC operating limit before leakage rises |
| VC @ IPPM | 179 V at 8.4 A - clamping voltage under 10/1000 µs surge; determines protected circuit's maximum transient exposure level |
| PPPM | 1500 W - peak pulse power handling capability; supports IEC 61000-4-5 Level 4 (4 kV/2 Ω) surge testing |
| IFSM | 200 A - non-repetitive forward surge rating (8.3 ms half-sine); enables robustness against inrush or fault currents |
| TJ max. | +175 °C - extended junction temperature rating allows use in under-hood automotive or high-ambient industrial environments |
| RθJL | 15.4 °C/W - low junction-to-lead thermal resistance enables effective heat dissipation through PCB copper pours or lead frames |
Pinout & Package
1N6298AHE3_B/C is housed in the industry-standard JEDEC DO-201AD (Case Style 1.5KE) axial-leaded package: molded epoxy body, matte tin-plated leads, RoHS-compliant, AEC-Q101 qualified (HE3 suffix), with cathode indicated by color band. Dimensions: 1.0" (25.4 mm) length × 0.210" (5.3 mm) diameter body, 0.375" (9.5 mm) lead length.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point in forward bias | Connected to lower-potential side of protected line (e.g., GND or return path); critical for correct polarity orientation |
| Cathode (banded end) | Current exit point in forward bias; clamping node in reverse bias | Connected to higher-potential side (e.g., VIN or signal line); absorbs transient energy when voltage exceeds VBR |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Enables stable VBR tolerance (±5%), low leakage (<1 µA), and long-term reliability under thermal cycling |
| 1500 W peak pulse power (10/1000 µs) | Supports high-energy surge standards including IEC 61000-4-5 and ISO 7637-2 without derating at TA ≤ 25 °C |
| AEC-Q101 qualified (HE3 suffix) | Validated for automotive applications including engine control, body electronics, and ADAS power domains |
| Low RθJL = 15.4 °C/W | Allows >80% of surge energy to conduct into PCB copper or chassis, reducing localized heating and improving lifetime |
| Solderable per J-STD-002/JESD 22-B102 | Ensures consistent wetting and mechanical bond strength during wave or reflow soldering processes |
Applications
| Automotive Power Rail Protection | Industrial PLC Digital Input Protection |
|---|---|
Use Scenario: Protecting 12 V/24 V battery-fed microcontroller power supplies in engine control units against load dump (ISO 7637-2 Pulse 5a/b) and alternator transients. IC Role / Device Role: Primary clamping device placed between VBAT and GND, upstream of DC-DC converter input. Use Value: Limits transient voltage to ≤179 V, preventing damage to downstream LDOs and MCU VCC pins while maintaining AEC-Q101 compliance. |
Use Scenario: Safeguarding 24 V digital input channels on programmable logic controllers exposed to inductive switching noise from solenoids and contactors. IC Role / Device Role: Parallel-connected TVS on each input channel, referenced to common ground. Use Value: Clamps fast-rising spikes (<1 ns response) to <180 V, preserving optocoupler integrity and eliminating false triggering in field I/O stages. |
| Telecom DC Power Feeds | Consumer Appliance Motor Drive Protection |
Use Scenario: Overvoltage suppression on –48 V DC power distribution boards in central office equipment subjected to lightning-induced surges. IC Role / Device Role: Unidirectional TVS installed across power rail and return, rated for continuous –48 V operation. Use Value: Withstands 111 V reverse standoff and clamps to 179 V, ensuring compatibility with telecom rectifier output tolerances and surge immunity requirements. |
Use Scenario: Protecting microcontroller GPIOs and gate drivers in washing machine motor control boards from back-EMF generated by brushed DC motors. IC Role / Device Role: Localized TVS on motor driver supply lines and H-bridge sense nodes. Use Value: Fast clamping (≤1 ns) prevents latch-up in logic ICs; 200 A IFSM rating handles repeated commutation transients without degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ130A-E3/52 | Lower PPPM (600 W), smaller SMB package (JEDEC DO-214AA), VC = 211 V @ 2.8 A | Not AEC-Q101 qualified; suited for space-constrained consumer or computing designs where 1500 W is not required | Select when board area is limited and surge threat level is ≤IEC 61000-4-5 Level 2; verify thermal margin due to higher RθJA. |
| 1.5KE130AHE3_B/C | Same electrical specs and AEC-Q101 qualification; identical 1.5KE package; differs only in part numbering convention (1.5KE vs. 1N prefix) | No functional or application difference - dual-marking variant used interchangeably in Vishay's production and logistics systems | Direct form-fit-function replacement; no design change required; preferred for BOM consolidation where both prefixes appear in legacy documentation. |
Compared with 1N6298AHE3_B/C, SMBJ130A-E3/52 offers reduced footprint but sacrifices 60% peak power handling and automotive qualification; 1.5KE130AHE3_B/C delivers identical protection performance and qualification in the same package - making it the only true drop-in alternative for AEC-Q101-critical designs.
Availability
1N6298AHE3_B/C is available at Aetrix Electronics and suitable for automotive ECU power conditioning, industrial PLC I/O protection, and telecom DC feed surge suppression requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for 1N6298AHE3_B/C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability, power efficiency, and automotive-grade validation.
The 1N6298AHE3_B/C belongs to Vishay's TRANSZORB® TVS diode family - engineered specifically for high-energy transient suppression in harsh environments where AEC-Q101 qualification, 1500 W pulse capability, and stable clamping performance are mandatory.
FAQ
What is the breakdown voltage tolerance for 1N6298AHE3_B/C?
The 1N6298AHE3_B/C has a specified breakdown voltage range of 124 V (minimum) to 137 V (maximum) at 1.0 mA test current, corresponding to a ±5% tolerance around the nominal 130 V rating. This tight VBR window ensures predictable clamping onset across production lots and temperature extremes from –55 °C to +175 °C, as confirmed in Vishay Document #88301 Table on page 2.
Is 1N6298AHE3_B/C AEC-Q101 qualified?
Yes, 1N6298AHE3_B/C is AEC-Q101 qualified - explicitly stated in Vishay Document #88301 footnote (2) on page 3, which confirms AEC-Q101 qualification applies to "1.5KE6.8AHE3_B to 1.5KE220AHE3_B" and includes 1N6298AHE3_B/C as the 1N-series equivalent of 1.5KE130AHE3_B. The HE3 suffix denotes both RoHS compliance and AEC-Q101 qualification.
What is the clamping voltage of 1N6298AHE3_B/C at its rated peak pulse current?
The 1N6298AHE3_B/C clamps to a maximum of 179 V at its rated peak pulse current of 8.4 A, measured using the standardized 10/1000 µs double-exponential waveform. This value is guaranteed across temperature and represents the upper limit of voltage seen by downstream circuitry during worst-case surge events, as published in the Electrical Characteristics table on page 2 of Vishay Document #88301.
Can 1N6298AHE3_B/C be used in bidirectional configurations?
No, 1N6298AHE3_B/C is strictly unidirectional - indicated by the "A" suffix (not "CA") and confirmed by its single-color-band marking and absence from the bidirectional voltage range (6.8 V–220 V) listed in the PRIMARY CHARACTERISTICS section. For bidirectional operation at ~130 V, the functionally matched part is 1N6298CAHE3_B/C, which is not interchangeable with 1N6298AHE3_B/C without circuit redesign.
What package type does 1N6298AHE3_B/C use, and what are its key mechanical dimensions?
1N6298AHE3_B/C uses the JEDEC DO-201AD (Case Style 1.5KE) axial-leaded package: 1.0 inch (25.4 mm) overall length, 0.210 inch (5.3 mm) body diameter, 0.375 inch (9.5 mm) lead length, with matte tin-plated leads compliant to J-STD-002. These dimensions are shown in the Package Outline Drawing on page 5 of Vishay Document #88301 and enable compatibility with standard axial insertion and wave solder tooling.
1N6298AHE3_B/C Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-201AA, DO-27, Axial
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 111V
- Voltage - Breakdown (Min):
- 124V
- Voltage - Clamping (Max) @ Ipp:
- 179V
- Current - Peak Pulse (10/1000µs):
- 8.4A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 1.5KE
1N6298AHE3_B/C FAQ
1.How can I place an order for 1N6298AHE3_B/C through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6298AHE3_B/C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6298AHE3_B/C reliable?
The price and inventory of 1N6298AHE3_B/C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6298AHE3_B/C is usually 5 days.
3.What payment methods are accepted for 1N6298AHE3_B/C?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6298AHE3_B/C transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6298AHE3_B/C?
1N6298AHE3_B/C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6298AHE3_B/C order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6298AHE3_B/C?
For technical support, including 1N6298AHE3_B/C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6298AHE3_B/C requirements.
6.How does Aetrix verify that 1N6298AHE3_B/C is sourced from the original manufacturer or authorized distributors?
All 1N6298AHE3_B/C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6298AHE3_B/C meets industry standards.
7.What is the process for return or replacement of 1N6298AHE3_B/C?
All 1N6298AHE3_B/C units undergo pre-shipment inspection (PSI). If there is an issue with 1N6298AHE3_B/C, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6298AHE3_B/C part is unused and in its original packaging.
Return procedure for 1N6298AHE3_B/C:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6298AHE3_B/C Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
