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Vishay General Semiconductor - Diodes Division 1N6299AHE3_B/C
- Part No.:
- 1N6299AHE3_B/C
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-201AA, DO-27, Axial
- Datasheet:
-
1N6299AHE3_B/C.pdf
- Description:
- 1.5KW,150V 5%,UNIDIR,AXIAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:6,808
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Product details
Overview
1N6299AHE3_B/C from Vishay General Semiconductor is a unidirectional Transient Voltage Suppressor (TVS) diode designed for primary-side overvoltage protection in power rails and signal lines. It features a 1500 W peak pulse power rating (10/1000 µs), 143–158 V breakdown voltage (VBR), 128 V stand-off voltage (VWM), 207 V maximum clamping voltage (VC) at 7.2 A peak pulse current, and operates across –55 °C to +175 °C junction temperature range - deployed in automotive power supply inputs and industrial sensor interface protection.
For engineers reviewing the 1N6299AHE3_B/C datasheet, 1N6299AHE3_B/C pinout, 1N6299AHE3_B/C application, or 1N6299AHE3_B/C equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance (RθJL = 15.4 °C/W), RoHS-compliant matte tin plating, and JEDEC 1.5KE package mechanical data - all critical for ESD/lightning transient design validation and BOM continuity planning.
Technical Context
This unidirectional TVS diode uses a glass-passivated silicon junction to achieve sub-nanosecond response time (<1 ns), enabling effective suppression of fast-rising transients from inductive switching or lightning-induced surges. Its low incremental surge resistance and excellent clamping ratio (VC/VBR ≈ 1.45) ensure minimal overshoot during 1500 W pulse events.
The device complies with AEC-Q101 stress test requirements and supports soldering per J-STD-002/JESD 22-B102, with JESD 201 Class 2 whisker resistance (HE3 suffix). Thermal performance is characterized by RθJA = 75 °C/W and RθJL = 15.4 °C/W, confirming suitability for lead-mounted PCB layouts without heatsinking under moderate duty cycles.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 143 V / 158 V at 1.0 mA - defines precise voltage threshold where clamping initiates; critical for coordination with downstream IC overvoltage limits |
| VWM | 128 V - maximum continuous reverse operating voltage; ensures no leakage conduction during normal 120 VAC-derived DC bus operation |
| VC @ IPPM | 207 V at 7.2 A - clamped voltage during full 1500 W transient; determines peak stress on protected circuitry |
| PPPM | 1500 W (10/1000 µs waveform) - peak surge energy handling capacity; validates robustness against IEC 61000-4-5 Level 4 surges |
| TJ max. | +175 °C - enables reliable operation in under-hood automotive environments and high-ambient industrial enclosures |
| RθJL | 15.4 °C/W - low junction-to-lead thermal resistance supports stable power dissipation in leaded through-hole mounting |
| AEC-Q101 | Qualified - confirms reliability for automotive electronics per stress test requirements including HTGB, HTRB, and TCT |
Pinout & Package
1N6299AHE3_B/C is housed in the standard JEDEC DO-201AD (Case Style 1.5KE) axial-leaded package with cathode indicated by a color band. Leads are matte tin-plated and compliant with J-STD-002 solderability standards.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / transient return path | Connected to ground or low-impedance return plane; forms low-inductance path for surge current diversion |
| Cathode | Clamping node / protected line connection | Connected to the line being protected (e.g., 12 V rail); conducts when VAK exceeds VBR |
Key Features
| Feature | Design Value |
|---|---|
| Glass passivated junction | Enables stable VBR tolerance (±5 %) and long-term parameter stability under thermal cycling and humidity stress |
| 1500 W peak pulse power (10/1000 µs) | Supports IEC 61000-4-5 combination wave testing up to 4 kV open-circuit / 2 kA short-circuit |
| AEC-Q101 qualified (HE3_B variant) | Validates suitability for automotive powertrain and body control modules requiring extended lifetime reliability |
| Low clamping ratio (VC/VBR ≈ 1.45) | Minimizes overvoltage overshoot during fast transients, reducing risk of gate oxide damage in protected MOSFETs |
| JESD 201 Class 2 whisker resistance | Prevents tin whisker growth under high-temperature/humidity conditions, ensuring long-term solder joint integrity |
Applications
| Automotive Power Input Protection | Industrial Sensor Signal Line Protection |
|---|---|
Use Scenario: 12 V battery-fed ECUs exposed to load dump (ISO 16750-2) and alternator ripple transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between power rail and chassis ground to clamp positive-going surges before they reach LDOs or microcontrollers. Use Value: Clamps 12 V rail to ≤207 V during 1500 W pulses, preventing latch-up or permanent damage to 3.3 V/5 V logic supplies downstream. |
Use Scenario: 4–20 mA current loop interfaces in PLC analog input modules subjected to field wiring ESD and inductive kickback. IC Role / Device Role / Timing Role: TVS connected across signal and return lines to shunt transients before reaching precision op-amps or ADC front-ends. Use Value: Sub-nanosecond response ensures clamping occurs before sensitive analog components experience destructive overvoltage. |
| Telecom AC/DC Adapter Input Stage | Consumer Appliance Motor Drive Power Supply |
Use Scenario: Secondary-side DC output of offline SMPS powering VoIP phones or base stations, subject to conducted surges from shared building wiring. IC Role / Device Role / Timing Role: TVS installed across DC output terminals to suppress common-mode transients coupled from mains input via transformer parasitics. Use Value: 128 V VWM allows safe operation with 12 V nominal outputs while clamping surges above 143 V within spec. |
Use Scenario: 24 V DC bus feeding BLDC motor drivers in smart home appliances, exposed to commutation spikes and ESD from user interfaces. IC Role / Device Role / Timing Role: TVS placed at motor driver power input to protect gate drivers and half-bridge FETs from inductive flyback energy. Use Value: 207 V clamping voltage provides margin above 24 V bus + 100 V flyback peaks, avoiding unintended conduction during normal operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ150A-E3/52 | Lower PPPM (600 W), smaller SMB package (surface-mount), VBR = 167–185 V, VC = 243 V @ 2.5 A | Not AEC-Q101 qualified; limited surge current handling; suited for space-constrained consumer PCBs, not under-hood automotive | Select when board space is constrained and surge energy is ≤600 W; verify layout thermal relief for SMB footprint. |
| 1.5KE150AHE3_B | Identical electrical specs and AEC-Q101 qualification; same DO-201AD package; differs only in packaging code (B vs B/C) and reel configuration | No functional or application difference; both rated for identical automotive and industrial use cases | Direct form-fit-function replacement; B/C denotes tape-and-reel variant with 1400-unit quantity - confirm reel compatibility with pick-and-place equipment. |
Compared with SMBJ150A-E3/52, 1N6299AHE3_B/C delivers 2.5× higher surge power handling and automotive qualification, while 1.5KE150AHE3_B offers identical protection performance in an interchangeable packaging format - making 1N6299AHE3_B/C optimal for high-energy, mission-critical transient suppression where reliability and legacy through-hole compatibility are required.
Availability
1N6299AHE3_B/C is available at Aetrix Electronics and suitable for automotive electronic control units, industrial programmable logic controllers, telecom power adapters, and consumer appliance motor drives requiring stable component supply across multi-year production cycles.
Supply support for 1N6299AHE3_B/C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and passive components with emphasis on reliability, power handling, and automotive-grade qualification.
The 1N6299AHE3_B/C belongs to Vishay's TRANSZORB® TVS diode family, engineered specifically for high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom infrastructure where failure due to voltage surges must be eliminated.
FAQ
What is the breakdown voltage tolerance for 1N6299AHE3_B/C?
The 1N6299AHE3_B/C has a specified breakdown voltage (VBR) range of 143 V to 158 V at 1.0 mA test current, representing a ±5 % tolerance about the nominal 150 V rating. This tight tolerance ensures predictable clamping onset and simplifies coordination with system-level overvoltage thresholds in automotive and industrial designs.
Is 1N6299AHE3_B/C qualified for automotive applications?
Yes, 1N6299AHE3_B/C carries the HE3 suffix, indicating it is AEC-Q101 qualified per Vishay documentation. This certification covers stress tests including high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), and temperature cycling (TCT), validating its use in automotive powertrain, body electronics, and infotainment systems.
What is the maximum clamping voltage of 1N6299AHE3_B/C and at what current does it occur?
The maximum clamping voltage (VC) of 1N6299AHE3_B/C is 207 V, measured at the peak pulse current (IPPM) of 7.2 A under a 10/1000 µs waveform. This value defines the upper voltage limit imposed on protected circuitry during worst-case transient events and is critical for ensuring downstream components remain within absolute maximum ratings.
Does 1N6299AHE3_B/C have RoHS compliance and lead-free plating?
Yes, the "HE3" suffix in 1N6299AHE3_B/C confirms RoHS compliance and matte tin-plated leads that meet J-STD-002 solderability requirements. The device also satisfies JESD 201 Class 2 whisker resistance, making it suitable for high-reliability applications where long-term interconnect integrity is essential.
How does the thermal resistance of 1N6299AHE3_B/C affect PCB layout decisions?
With a junction-to-lead thermal resistance (RθJL) of 15.4 °C/W and junction-to-ambient (RθJA) of 75 °C/W, 1N6299AHE3_B/C relies on adequate copper pour and lead length (≥9.5 mm) for heat dissipation. Layouts should avoid narrow traces on anode/cathode leads and provide ≥250 mil² copper area per lead to maintain TJ < 175 °C during repetitive surge events.
1N6299AHE3_B/C Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-201AA, DO-27, Axial
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 128V
- Voltage - Breakdown (Min):
- 143V
- Voltage - Clamping (Max) @ Ipp:
- 207V
- Current - Peak Pulse (10/1000µs):
- 7.2A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 1.5KE
1N6299AHE3_B/C FAQ
1.How can I place an order for 1N6299AHE3_B/C through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6299AHE3_B/C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6299AHE3_B/C reliable?
The price and inventory of 1N6299AHE3_B/C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6299AHE3_B/C is usually 5 days.
3.What payment methods are accepted for 1N6299AHE3_B/C?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6299AHE3_B/C transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6299AHE3_B/C?
1N6299AHE3_B/C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6299AHE3_B/C order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6299AHE3_B/C?
For technical support, including 1N6299AHE3_B/C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6299AHE3_B/C requirements.
6.How does Aetrix verify that 1N6299AHE3_B/C is sourced from the original manufacturer or authorized distributors?
All 1N6299AHE3_B/C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6299AHE3_B/C meets industry standards.
7.What is the process for return or replacement of 1N6299AHE3_B/C?
All 1N6299AHE3_B/C units undergo pre-shipment inspection (PSI). If there is an issue with 1N6299AHE3_B/C, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6299AHE3_B/C part is unused and in its original packaging.
Return procedure for 1N6299AHE3_B/C:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6299AHE3_B/C Tags
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ESD9B5.0ST5G
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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