Vishay General Semiconductor - Diodes Division 1N6301AHE3_B/C
- Part No.:
- 1N6301AHE3_B/C
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-201AA, DO-27, Axial
- Datasheet:
-
1N6301AHE3_B/C.pdf
- Description:
- 1.5KW,170V 5%,UNIDIR,AXIAL TVS
- Quantity:
- Payment:

- Shipping:

Inventory:2,962
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Product details
Overview
1N6301AHE3_B/C from Vishay General Semiconductor is a unidirectional Transient Voltage Suppressor (TVS) diode designed for primary-side overvoltage protection in power rails and signal lines. It features a 1500 W peak pulse power rating (10/1000 µs), 162–179 V breakdown voltage (VBR), 145 V stand-off voltage (VWM), 234 V clamping voltage at 6.4 A peak pulse current, and operates from –55 °C to +175 °C - deployed in automotive power supply inputs and industrial sensor interface protection.
For engineers reviewing the 1N6301AHE3_B/C datasheet, 1N6301AHE3_B/C pinout, 1N6301AHE3_B/C application, or 1N6301AHE3_B/C equivalent, this page delivers verified electrical parameters, JEDEC 1.5KE package details, AEC-Q101 qualification status, thermal resistance (RθJL = 15.4 °C/W), and direct alternative part comparisons for ESD and lightning surge protection design validation.
Technical Context
This TVS diode uses a glass-passivated silicon junction optimized for fast transient response (<1 ns) and low incremental surge resistance. Its unidirectional polarity enables cathode-referenced clamping on DC-biased lines, with a 3.5 V forward voltage at 100 A only applicable to devices ≤1.5KE220A - not relevant to 1N6301AHE3_B/C (≥1.5KE250A tier).
The device complies with UL 497B for protector classification and meets JESD 201 Class 2 whisker resistance (HE3 suffix). It is rated for 200 A non-repetitive forward surge (8.3 ms half-sine) and derates linearly above 25 °C ambient per Fig. 2, with thermal resistance from junction-to-lead (15.4 °C/W) enabling direct PCB copper pour heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR min/max | 162 V / 179 V at 1.0 mA test current - defines reliable conduction onset under surge conditions |
| VWM | 145 V - maximum continuous reverse operating voltage before leakage exceeds 1.0 µA |
| VC @ IPPM | 234 V at 6.4 A - clamped voltage seen by protected IC during full 1500 W transient event |
| PPPM | 1500 W (10/1000 µs waveform) - peak surge energy handling capacity without failure |
| TJ range | –55 °C to +175 °C - supports under-hood automotive and high-temp industrial environments |
| RθJL | 15.4 °C/W - enables thermal design using PCB copper as heatsink; limits junction rise to ≤99 °C at 6.5 W steady-state |
| AEC-Q101 | Qualified - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD |
Pinout & Package
Package: JEDEC DO-201AD (Case Style 1.5KE), molded epoxy body with matte tin-plated leads; RoHS-compliant and AEC-Q101 qualified (HE3 suffix); 0.375" lead length standard.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference node | Connected to ground or low-potential rail; conducts during reverse-transient clamp |
| Cathode | High-side surge input node | Marked with color band; connects to protected line (e.g., 12 V rail, CAN-H, sensor VCC) |
Key Features
| Feature | Design Value |
|---|---|
| Glass passivated junction | Ensures stable VBR tolerance and long-term leakage stability under humidity/thermal stress |
| 1500 W peak pulse power | Withstands IEC 61000-4-5 Level 4 (4 kV, 2 Ω source) surges without degradation |
| Fast response time (<1 ns) | Clamps transients before downstream MOSFET gate oxide or MCU I/O structures experience overstress |
| AEC-Q101 qualification | Validated for automotive powertrain and body electronics per stress test requirements |
| UL 497B recognition | Approved for use in telecom and industrial equipment requiring certified surge protection |
Applications
| Automotive Power Input Protection | Industrial Sensor Signal Line Clamp |
|---|---|
Use Scenario: 12 V battery rail in engine control unit exposed to load dump (ISO 7637-2 Pulse 5a, up to 60 V/100 ms) and alternator ripple. IC Role / Device Role: Primary overvoltage clamp placed between fused 12 V input and DC-DC converter input stage. Use Value: Limits transient voltage to ≤234 V, protecting 40 V-rated input MOSFETs and LDOs without crowbar action or reset dependency. | Use Scenario: 24 V analog sensor output (e.g., pressure transducer) routed across noisy factory floor with inductive motor switching nearby. IC Role / Device Role: Unidirectional TVS placed differential-mode across signal and return, referenced to local ground. Use Value: Clamps induced spikes ≤234 V while maintaining <1 µA leakage at 24 V, preserving 16-bit ADC accuracy and offset stability. |
| Telecom Line Interface Protection | Consumer Appliance Motor Drive Surge Absorption |
Use Scenario: DC power feed (48 V) to remote DSLAM card subjected to lightning-induced surges on long outdoor cable runs. IC Role / Device Role: First-stage unidirectional suppressor on power entry, upstream of π-filter and secondary TVS array. Use Value: Absorbs >90% of 1500 W surge energy per IEC 61000-4-5, reducing stress on downstream MOVs and polymer PTCs. | Use Scenario: 230 VAC-fed BLDC motor drive board where back-EMF spikes from commutation threaten gate drivers and MCU I/O. IC Role / Device Role: DC bus TVS on rectified output (e.g., ~325 V), clamping switch-node overshoot during turn-off. Use Value: Limits voltage overshoot to 234 V relative to rail, preventing gate oxide rupture in 600 V Si MOSFETs and false triggering of overvoltage flags. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ170A | Lower PPPM (600 W), smaller SMB package (vs. DO-201AD), higher VC/VBR ratio (1.37 vs. 1.44) | Not AEC-Q101 qualified; limited to commercial-grade consumer/industrial use | Select when space-constrained layouts require SMT mounting and 1500 W rating is not required |
| 1.5KE170A-E3/54 | Same electrical specs and DO-201AD package, but commercial-grade (E3) - no AEC-Q101 qualification or JESD 201 Class 2 whisker testing | Lacks automotive qualification; unsuitable for under-hood or safety-critical modules | Select only for cost-sensitive non-automotive designs where AEC-Q101 is not mandated |
Compared with 1N6301AHE3_B/C, SMBJ170A trades peak power and qualification for footprint reduction, while 1.5KE170A-E3/54 matches performance but omits automotive reliability validation - making 1N6301AHE3_B/C the sole choice when AEC-Q101 compliance and 1500 W surge immunity are co-required.
Availability
1N6301AHE3_B/C is available at Aetrix Electronics and suitable for automotive power systems, industrial sensor interfaces, and telecom power feed applications requiring stable component supply, long-lifecycle support, and traceable AEC-Q101 qualified parts.
Supply support for 1N6301AHE3_B/C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and application-specific performance.
The 1N6301AHE3_B/C belongs to Vishay's TRANSZORB® TVS family, engineered for robust transient suppression in harsh environments - particularly targeting automotive, industrial, and telecom infrastructure where sustained surge immunity and qualification compliance are mandatory.
FAQ
What is the breakdown voltage range for the 1N6301AHE3_B/C?
The 1N6301AHE3_B/C has a guaranteed breakdown voltage (VBR) range of 162 V to 179 V at 1.0 mA test current, measured per JEDEC standards. This tight tolerance ensures predictable clamping onset across production lots and temperature extremes, critical for protecting 150 V-rated downstream components. The 1N6301AHE3_B/C maintains this specification under full AEC-Q101 stress screening.
Is the 1N6301AHE3_B/C suitable for automotive applications?
Yes, the 1N6301AHE3_B/C is AEC-Q101 qualified and specifically tested for automotive use, including temperature cycling, high-temperature reverse bias, and mechanical shock. Its DO-201AD package, 175 °C max junction temperature, and JESD 201 Class 2 whisker resistance make it appropriate for engine bay, body control module, and ADAS power rail protection - unlike non-qualified variants such as 1.5KE170A-E3/54.
What is the clamping voltage of the 1N6301AHE3_B/C at its rated peak pulse current?
The 1N6301AHE3_B/C clamps to a maximum of 234 V at its rated peak pulse current (IPPM) of 6.4 A, defined by the 10/1000 µs waveform. This value is measured per Fig. 7 in the Vishay datasheet and represents the worst-case voltage imposed on protected circuitry during a full 1500 W transient - a key parameter for validating margin against downstream component voltage ratings in the 1N6301AHE3_B/C design-in.
Does the 1N6301AHE3_B/C have bidirectional capability?
No, the 1N6301AHE3_B/C is a unidirectional TVS diode, indicated by the "A" suffix (vs. "CA" for bidirectional). It conducts only when cathode voltage exceeds anode by ≥VBR, making it suitable for DC-biased lines like automotive 12 V/24 V rails or sensor power feeds. For AC or floating signal lines, a bidirectional variant such as 1N6301CAHE3_B/C would be required - which is not offered in this specific part number.
What packaging and plating does the 1N6301AHE3_B/C use?
The 1N6301AHE3_B/C uses JEDEC DO-201AD (Case Style 1.5KE) packaging with matte tin-plated leads compliant with J-STD-002 and JESD 22-B102 solderability standards. The HE3 suffix confirms RoHS compliance, AEC-Q101 qualification, and JESD 201 Class 2 whisker resistance - distinguishing it from commercial-grade E3 variants that lack automotive validation.
1N6301AHE3_B/C Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-201AA, DO-27, Axial
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 145V
- Voltage - Breakdown (Min):
- 162V
- Voltage - Clamping (Max) @ Ipp:
- 234V
- Current - Peak Pulse (10/1000µs):
- 6.4A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 1.5KE
1N6301AHE3_B/C FAQ
1.How can I place an order for 1N6301AHE3_B/C through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6301AHE3_B/C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6301AHE3_B/C reliable?
The price and inventory of 1N6301AHE3_B/C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6301AHE3_B/C is usually 5 days.
3.What payment methods are accepted for 1N6301AHE3_B/C?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6301AHE3_B/C transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6301AHE3_B/C?
1N6301AHE3_B/C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6301AHE3_B/C order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6301AHE3_B/C?
For technical support, including 1N6301AHE3_B/C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6301AHE3_B/C requirements.
6.How does Aetrix verify that 1N6301AHE3_B/C is sourced from the original manufacturer or authorized distributors?
All 1N6301AHE3_B/C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6301AHE3_B/C meets industry standards.
7.What is the process for return or replacement of 1N6301AHE3_B/C?
All 1N6301AHE3_B/C units undergo pre-shipment inspection (PSI). If there is an issue with 1N6301AHE3_B/C, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6301AHE3_B/C part is unused and in its original packaging.
Return procedure for 1N6301AHE3_B/C:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6301AHE3_B/C Tags

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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