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Vishay General Semiconductor - Diodes Division 1N6303AHE3_B/C
- Part No.:
- 1N6303AHE3_B/C
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-201AA, DO-27, Axial
- Datasheet:
-
1N6303AHE3_B/C.pdf
- Description:
- 1.5KW,200V 5%,UNIDIR,AXIAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,063
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Product details
Overview
1N6303AHE3_B/C from Vishay General Semiconductor is a unidirectional Transient Voltage Suppressor (TVS) diode designed for primary-side overvoltage protection in power rails and signal lines. It features a 190 V to 210 V breakdown voltage (VBR), 171 V maximum standoff voltage (VWM), 274 V clamping voltage at 5.5 A peak pulse current, 1500 W peak pulse power rating (10/1000 µs), and operates across -55 °C to +175 °C junction temperature. It is used to protect MOSFETs, ICs, and sensor interfaces against lightning-induced transients and inductive switching surges.
For engineers reviewing the 1N6303AHE3_B/C datasheet, 1N6303AHE3_B/C pinout, 1N6303AHE3_B/C application, or 1N6303AHE3_B/C equivalent, this device serves as a high-energy, fast-response (≤1 ns), glass-passivated unidirectional TVS with AEC-Q101 qualification, RoHS-compliant matte tin leads, and UL 94 V-0 molded epoxy package - critical for automotive power supply rail protection, industrial I/O conditioning, and telecom line interface hardening.
Technical Context
This device implements a silicon avalanche junction structure optimized for low incremental surge resistance and stable clamping under repetitive 10/1000 µs transients. Its unidirectional polarity enables cathode-referenced placement on DC-biased lines, with a 3.5 V forward voltage at 100 A surge and 15.4 °C/W junction-to-lead thermal resistance enabling direct PCB trace heat sinking.
The 1N6303AHE3_B/C is rated for 200 A non-repetitive forward surge current (8.3 ms half-sine), supports 6.5 W steady-state power dissipation at TL = 75 °C, and exhibits a +0.108 %/°C temperature coefficient of VBR, ensuring predictable voltage margin shift across automotive and industrial temperature ranges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 190 V / 210 V - defines minimum guaranteed clamping onset and maximum allowable deviation before catastrophic failure |
| VWM | 171 V - maximum continuous reverse operating voltage without significant leakage; sets safe DC bias margin |
| VC @ IPPM | 274 V - clamped voltage during 5.5 A 10/1000 µs transient; determines protected circuit's peak stress level |
| PPPM | 1500 W - peak transient energy absorption capacity; enables protection against IEC 61000-4-5 Level 4 surges |
| IFSM | 200 A - single-cycle surge current handling; supports robustness against motor commutation spikes |
| TJ max. | +175 °C - extended junction temperature rating allows use in under-hood automotive and high-ambient industrial environments |
| Package | Case Style 1.5KE - axial-leaded DO-201AD package with 0.375" lead length; compatible with through-hole wave soldering |
Pinout & Package
Package: DO-201AD (Case Style 1.5KE), axial-leaded, molded epoxy body meeting UL 94 V-0; matte tin-plated leads compliant with J-STD-002 and JESD 22-B102; cathode indicated by color band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to lower-potential side of protected line; carries full surge current during clamping |
| Cathode | Avalanche breakdown terminal | Marked with color band; referenced to system ground or higher-potential rail; defines clamping polarity |
Key Features
| Feature | Design Value |
|---|---|
| Glass passivated junction | Enables stable long-term leakage performance and resistance to humidity-induced degradation in harsh environments |
| 1500 W peak pulse power (10/1000 µs) | Supports IEC 61000-4-5 surge immunity up to 4 kV open-circuit voltage with appropriate series impedance |
| AEC-Q101 qualified | Validated for automotive powertrain and chassis applications requiring zero defect reliability and extended temperature operation |
| Low incremental surge resistance | Minimizes voltage overshoot during fast-rising transients (<1 ns response), preserving timing margins in high-speed circuits |
| RoHS-compliant HE3 suffix | Indicates AEC-Q101 qualification and JESD 201 Class 2 whisker resistance - suitable for high-reliability solder joints |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: 12 V/24 V battery-connected ECUs exposed to load dump and alternator ripple. IC Role / Device Role: Primary overvoltage clamp placed between input rail and ground, upstream of DC-DC converters. Use Value: Clamps transients to ≤274 V within nanoseconds, preventing damage to 36 V-rated regulators and microcontrollers. |
Use Scenario: 4–20 mA current loop inputs in PLC analog modules subjected to field wiring ESD and surge coupling. IC Role / Device Role: Unidirectional shunt protector across input terminals, referenced to system ground. Use Value: Limits induced voltage to safe levels while maintaining <1 µA leakage at 171 V, preserving loop accuracy. |
| Telecom Line Interface Hardening | Motor Drive Gate Driver Protection |
Use Scenario: RS-485 transceivers connected to outdoor cabling vulnerable to lightning-induced common-mode surges. IC Role / Device Role: Rail-to-rail TVS pair (with complementary bidirectional device) protecting differential bus lines. Use Value: Absorbs 1500 W pulses without degradation, enabling compliance with ITU-T K.20/21 immunity requirements. |
Use Scenario: High-side gate driver supply rails in BLDC inverters experiencing Miller-induced voltage spikes during switching. IC Role / Device Role: Clamp on VDD rail of isolated gate driver IC, referenced to local ground. Use Value: Prevents gate oxide rupture by limiting VDD overshoot to 274 V during 5.5 A transient events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ200A | DO-214AA package (SMB), 200 V VWM, 324 V VC @ 4.6 A, 600 W PPPM | Lower peak power and higher clamping voltage; suited for space-constrained PCBs where 1500 W is not required | Select SMBJ200A when board area is limited and surge threat level is ≤IEC 61000-4-5 Level 3 |
| 1.5KE200A-E3/54 | Same electrical specs and DO-201AD package, but commercial-grade (non-AEC-Q101), E3 suffix only (JESD 201 Class 1A) | Lacks automotive qualification and enhanced whisker resistance; intended for consumer/industrial use only | Choose 1.5KE200A-E3/54 for cost-sensitive non-automotive designs where AEC-Q101 is not mandated |
Compared with SMBJ200A, the 1N6303AHE3_B/C delivers 2.5× higher surge power and 50 V lower clamping, enabling stronger protection in high-threat environments; versus 1.5KE200A-E3/54, it adds AEC-Q101 qualification and Class 2 whisker resistance - essential for automotive production and long-life industrial deployments.
Availability
1N6303AHE3_B/C is available at Aetrix Electronics and suitable for automotive power distribution units, industrial programmable logic controllers, telecom base station interfaces, and motor control systems requiring stable component supply with guaranteed long-term continuity.
Supply support for 1N6303AHE3_B/C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The 1N6303AHE3_B/C belongs to Vishay's TRANSZORB® TVS family, engineered specifically for high-energy transient suppression in safety-critical and high-temperature environments - emphasizing robustness, consistency, and qualification rigor.
FAQ
What is the clamping voltage of the 1N6303AHE3_B/C under a standard 10/1000 µs surge?
The 1N6303AHE3_B/C clamps to a maximum of 274 V when subjected to its rated 5.5 A peak pulse current under the 10/1000 µs waveform. This value is measured per JEDEC standards and represents the upper limit of voltage seen by downstream circuitry during worst-case transient events. The 1N6303AHE3_B/C maintains this clamping performance across its full operating temperature range and after repeated surges, provided derating guidelines are followed.
Is the 1N6303AHE3_B/C suitable for automotive applications?
Yes, the 1N6303AHE3_B/C is AEC-Q101 qualified and manufactured with JESD 201 Class 2 whisker-resistant matte tin plating, making it suitable for automotive powertrain, body electronics, and ADAS modules. Its -55 °C to +175 °C operating junction temperature range, glass-passivated junction, and UL 94 V-0 molding compound meet stringent automotive environmental and safety requirements. The 1N6303AHE3_B/C is explicitly listed in Vishay's AEC-Q101 qualified product matrix for the 1.5KE family.
How does the 1N6303AHE3_B/C differ from the standard 1.5KE200A part?
The 1N6303AHE3_B/C shares identical electrical specifications with 1.5KE200A (VBR: 190–210 V, VWM: 171 V, VC: 274 V) but differs in qualification and marking: the HE3_B/C suffix denotes AEC-Q101 qualification, JESD 201 Class 2 whisker resistance, and RoHS compliance, whereas 1.5KE200A-E3/54 is commercial-grade only. Both use the same DO-201AD package and share mechanical dimensions, but the 1N6303AHE3_B/C is designated for automotive and high-reliability industrial use.
What is the maximum steady-state power dissipation for the 1N6303AHE3_B/C?
The 1N6303AHE3_B/C has a maximum steady-state power dissipation (PD) of 6.5 W when mounted on an infinite heatsink at a lead temperature (TL) of 75 °C. This rating assumes optimal thermal path design - typically achieved using ≥0.5 oz copper pour and ≥2 cm² pad area connected to internal ground planes. Derating is required above 75 °C lead temperature per Figure 5 in the Vishay datasheet 88301, with zero dissipation at 175 °C junction temperature.
Does the 1N6303AHE3_B/C have bidirectional capability?
No, the 1N6303AHE3_B/C is a unidirectional TVS diode, indicated by the "A" suffix and presence of a cathode band. Bidirectional variants in the same voltage class use the "CA" suffix (e.g., 1.5KE200CA). The 1N6303AHE3_B/C conducts only in reverse breakdown and blocks forward current up to 3.5 V at 100 A; it must be oriented with cathode toward the higher-potential side of the protected line. Using it in bidirectional configurations requires pairing with a second device or selecting a CA-series part.
1N6303AHE3_B/C Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-201AA, DO-27, Axial
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 171V
- Voltage - Breakdown (Min):
- 190V
- Voltage - Clamping (Max) @ Ipp:
- 274V
- Current - Peak Pulse (10/1000µs):
- 5.5A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 1.5KE
1N6303AHE3_B/C FAQ
1.How can I place an order for 1N6303AHE3_B/C through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6303AHE3_B/C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6303AHE3_B/C reliable?
The price and inventory of 1N6303AHE3_B/C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6303AHE3_B/C is usually 5 days.
3.What payment methods are accepted for 1N6303AHE3_B/C?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6303AHE3_B/C transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6303AHE3_B/C?
1N6303AHE3_B/C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6303AHE3_B/C order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6303AHE3_B/C?
For technical support, including 1N6303AHE3_B/C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6303AHE3_B/C requirements.
6.How does Aetrix verify that 1N6303AHE3_B/C is sourced from the original manufacturer or authorized distributors?
All 1N6303AHE3_B/C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6303AHE3_B/C meets industry standards.
7.What is the process for return or replacement of 1N6303AHE3_B/C?
All 1N6303AHE3_B/C units undergo pre-shipment inspection (PSI). If there is an issue with 1N6303AHE3_B/C, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6303AHE3_B/C part is unused and in its original packaging.
Return procedure for 1N6303AHE3_B/C:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6303AHE3_B/C Tags
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