My Inquiry
My Account
Vishay General Semiconductor - Diodes Division 1N6376HE3/51
- Part No.:
- 1N6376HE3/51
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-201AA, DO-27, Axial
- Datasheet:
-
1N6376HE3/51.pdf
- Description:
- TVS DIODE 12VWM 16.5VC 1.5KE
- Quantity:
- Payment:
- Shipping:
Inventory:9,380
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N6376HE3/51 from Vishay General Semiconductor is a bi-directional TransZORB® transient voltage suppressor (TVS) diode in the 1.5KE package, designed for clamping voltage transients on signal or power lines. It features a 12.0 V stand-off voltage (VWM), 14.1 V minimum breakdown voltage (VBR), 16.1 V maximum clamping voltage at 1.0 A, 1500 W peak pulse power (10/1000 µs), and AEC-Q101 qualification for automotive-grade reliability.
For engineers reviewing the 1N6376HE3/51 datasheet, 1N6376HE3/51 pinout, 1N6376HE3/51 application, or 1N6376HE3/51 equivalent, key selection criteria include its bi-directional clamping capability, low incremental surge resistance, fast response time, and suitability for protecting MOSFETs, sensor signal lines, and industrial control interfaces against inductive switching surges and ESD events.
Technical Context
The 1N6376HE3/51 operates as a bi-directional avalanche diode with symmetrical clamping in both polarities, enabling protection of AC-coupled or floating signal paths without polarity constraints. Its glass-passivated junction ensures stable breakdown characteristics and robust surge handling under repetitive 10/1000 µs transients at 0.01% duty cycle.
It delivers 16.1 V clamping at 1.0 A and 16.5 V at 10 A, with a clamping factor of 1.20 at 50% rated power - confirming tight voltage regulation during surge events. The device is rated for TJ = –55 °C to +175 °C and meets JESD 201 Class 2 whisker resistance requirements via its HE3 suffix.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 12.0 V - Maximum continuous reverse operating voltage before conduction begins; defines safe working margin for 12 V nominal systems. |
| VBR (min) | 14.1 V at 1.0 mA - Guaranteed avalanche initiation threshold; ensures predictable turn-on during overvoltage events. |
| VC @ 1.0 A | 16.1 V - Clamped voltage seen by protected circuit at low-surge current; critical for safeguarding logic-level inputs. |
| VC @ 10 A | 16.5 V - Clamped voltage under high-energy surge; confirms low dynamic impedance and effective energy absorption. |
| PPPM | 1500 W (10/1000 µs) - Peak transient power handling capacity; supports IEC 61000-4-5 Level 4 surge immunity compliance. |
| TJ max | +175 °C - Maximum junction temperature; enables operation in under-hood automotive or high-ambient industrial environments. |
| AEC-Q101 | Qualified - Validated for automotive electronic modules per stress test requirements including HTGB, HTRB, and TCT. |
Pinout & Package
Package: 1.5KE molded epoxy case (JEDEC DO-201AD), axial-leaded, RoHS-compliant, matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. No polarity marking - bi-directional operation confirmed.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode / Cathode (symmetrical) | Bi-directional avalanche junction | No functional distinction between leads; either terminal serves as cathode or anode depending on transient polarity. |
| Lead 1 | Current path input/output | Carries full surge current bidirectionally; requires ≥0.375" (9.5 mm) lead length for thermal relief per datasheet layout guidance. |
| Lead 2 | Current path input/output | Electrically identical to Lead 1; symmetric construction eliminates orientation dependency during PCB placement. |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated chip junction | Ensures stable VBR tolerance and long-term reliability under thermal cycling and humidity exposure. |
| 1500 W peak pulse power (10/1000 µs) | Supports robust protection against lightning-induced surges and inductive kickback in motor drives and power supplies. |
| AEC-Q101 qualification | Validates suitability for automotive body electronics, infotainment, and ADAS sensor interfaces requiring zero-failure field performance. |
| Low clamping factor (1.20 @ 50% PPPM) | Minimizes voltage overshoot during partial-power transients, preserving margin for 3.3 V or 5 V logic components. |
| JESD 201 Class 2 whisker resistance | Prevents tin whisker growth in high-reliability applications, eliminating risk of latent short circuits in sealed assemblies. |
Applications
| Automotive Sensor Protection | Industrial PLC I/O Protection |
|---|---|
Use Scenario: Protecting CAN/LIN bus transceivers and analog sensor outputs (e.g., pressure, temperature) from load-dump and jump-start transients. IC Role / Device Role / Timing Role: Bi-directional voltage clamp placed across differential signal pairs or supply rails upstream of interface ICs. Use Value: Maintains signal integrity below 16.5 V clamping limit during 10 A surges, preventing latch-up or damage to 12 V-rated transceivers. |
Use Scenario: Safeguarding digital input modules in programmable logic controllers exposed to relay coil flyback and EMI from nearby VFDs. IC Role / Device Role / Timing Role: Standoff-connected TVS across 24 V DC input terminals to shunt inductive energy before it reaches optocoupler input stages. Use Value: Absorbs 1500 W pulses without degradation, enabling >100,000 surge cycles per IEC 61000-4-5 compliance testing. |
| Telecom Line Interface | Consumer Power Adapter Input |
Use Scenario: Secondary-side surge suppression on Ethernet PHY power rails and RS-485 termination networks in base stations and edge routers. IC Role / Device Role / Timing Role: Bi-directional clamping element referenced to local ground, placed adjacent to connector entry points. Use Value: Responds in <1 ps to transients, limiting voltage excursion to ≤16.5 V and preserving ±10 V common-mode range of RS-485 receivers. |
Use Scenario: Primary-side transient suppression on AC-DC adapter inputs subjected to mains-borne surges and capacitor discharge events. IC Role / Device Role / Timing Role: Parallel-connected TVS across bridge rectifier output to clamp voltage spikes before bulk capacitor charging. Use Value: Handles 200 A non-repetitive forward surge (IFSM), surviving repeated 170 VAC line swells without parametric shift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ12CA | DO-214AA package (SMB), 600 W PPPM, 19.9 V VC @ 10 A, lower surge rating than 1N6376HE3/51. | Better suited for space-constrained PCBs but insufficient for 1500 W IEC 61000-4-5 Level 4 compliance. | Select when board area is critical and surge energy is limited to ≤600 W. |
| 1N6376HE3_A | Same electrical specs and 1.5KE package; differs only in packaging format (reel vs. ammo pack) and revision code "A". | Identical functional performance; no design impact - only logistics and traceability distinction. | Choose based on procurement channel preference; fully interchangeable in circuit design and layout. |
Compared with SMBJ12CA and 1N6376HE3_A, the 1N6376HE3/51 uniquely combines AEC-Q101 qualification, 1500 W surge capacity, and bi-directional 12 V clamping in the rugged 1.5KE through-hole package - making it optimal for automotive and industrial applications demanding highest reliability and energy-handling margin.
Availability
1N6376HE3/51 is available at Aetrix Electronics and suitable for automotive sensor interfaces, industrial PLC I/O modules, telecom line protection, and consumer power adapter designs requiring stable component supply and AEC-Q101 assurance.
Supply support for 1N6376HE3/51 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The 1N6376HE3/51 belongs to Vishay's TransZORB® TVS family, engineered specifically for high-energy transient suppression in automotive, industrial, and communications infrastructure where failure modes must be eliminated under harsh electrical stress.
FAQ
What is the polarity configuration of the 1N6376HE3/51?
The 1N6376HE3/51 is a bi-directional TVS diode with symmetrical avalanche characteristics in both directions. It has no polarity marking on the package, and either lead may serve as anode or cathode depending on transient polarity. This enables use in AC-coupled or floating signal paths without orientation constraints during assembly.
Is the 1N6376HE3/51 qualified for automotive applications?
Yes, the 1N6376HE3/51 carries the HE3 suffix, which denotes AEC-Q101 qualification per Vishay's documentation. It has passed stress tests including high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), and temperature cycling (TCT), validating its suitability for under-hood and chassis-mounted automotive electronics.
What is the maximum clamping voltage of the 1N6376HE3/51 at 10 A surge current?
The 1N6376HE3/51 has a maximum clamping voltage (VC) of 16.5 V at 10 A peak pulse current with a 10/1000 µs waveform. This value is guaranteed per JEDEC-registered data and reflects the device's low dynamic impedance during high-energy transients, ensuring downstream components remain within safe operating voltage limits.
Does the 1N6376HE3/51 require heatsinking for standard operation?
No external heatsink is required for the 1N6376HE3/51 under typical transient conditions, as its 6.5 W steady-state power dissipation rating applies only to continuous DC loading - not pulsed surge events. The device is designed to absorb energy thermally within its junction during short-duration transients without exceeding TJ = 175 °C.
How does the 1N6376HE3/51 differ from the uni-directional 1N6376E3/51?
The 1N6376HE3/51 is bi-directional with symmetrical clamping, while the 1N6376E3/51 is uni-directional and features a cathode band marking. Their VWM, VBR, and VC values differ slightly due to internal structure - the bi-directional version has higher VBR (14.1 V min) and no polarity-dependent forward conduction behavior, making it appropriate for AC or differential signal protection.
1N6376HE3/51 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-201AA, DO-27, Axial
- Series:
- TransZorb®
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 12V
- Voltage - Breakdown (Min):
- 14.1V
- Voltage - Clamping (Max) @ Ipp:
- 16.5V
- Current - Peak Pulse (10/1000µs):
- 70A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 1.5KE
1N6376HE3/51 FAQ
1.How can I place an order for 1N6376HE3/51 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6376HE3/51 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6376HE3/51 reliable?
The price and inventory of 1N6376HE3/51 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6376HE3/51 is usually 5 days.
3.What payment methods are accepted for 1N6376HE3/51?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6376HE3/51 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6376HE3/51?
1N6376HE3/51 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6376HE3/51 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6376HE3/51?
For technical support, including 1N6376HE3/51 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6376HE3/51 requirements.
6.How does Aetrix verify that 1N6376HE3/51 is sourced from the original manufacturer or authorized distributors?
All 1N6376HE3/51 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6376HE3/51 meets industry standards.
7.What is the process for return or replacement of 1N6376HE3/51?
All 1N6376HE3/51 units undergo pre-shipment inspection (PSI). If there is an issue with 1N6376HE3/51, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6376HE3/51 part is unused and in its original packaging.
Return procedure for 1N6376HE3/51:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6376HE3/51 Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
