Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Semtech Corporation 1N6461US

Part No.:
1N6461US
Manufacturer:
Semtech Corporation
Category:
TVS Diodes
Package:
SQ-MELF, B
Datasheet:
Aetrix1N6461US.pdf
Description:
TVS DIODE 5VWM 9VC B AXIAL
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,096

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

1N6461US from Semtech is a transient diverting suppressor (TDS) designed for high-energy EOS protection of 22V-rated power or I/O lines, featuring ±30kV IEC 61000-4-2 ESD immunity, 40A peak pulse current (8/20μs), and stable 27.5–28V clamping across temperature and current range - deployed in USB Type-C PD input protection and industrial load switch inputs.

For engineers reviewing the 1N6461US datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, DFN-6 package layout guidance, real-world clamping behavior vs. conventional TVS, and direct alternatives for 22V bus protection with low dynamic resistance and minimal thermal drift.

Technical Context

The 1N6461US uses a surge-rated FET as its primary protection element, activated by a precision trigger circuit that turns on the shunt path when transient voltage exceeds breakdown. Unlike standard TVS diodes, its clamping voltage remains nearly constant due to decreasing RDS(on) under surge, not fixed RDYN.

It operates over –40°C to +125°C with 22V reverse stand-off, 27.9V typical breakdown, and 20mΩ dynamic resistance (measured 1–40A, 8/20μs). Its 175pF junction capacitance at 22V/1MHz supports moderate-speed interfaces without signal integrity compromise.

Key Specifications

Parameter Value and Actual Design Meaning
Working Voltage 22V - matches nominal USB PD bus and industrial 24V rail systems without derating.
Clamping Voltage 27.5–28V at 40A (8/20μs) - stays below 30V damage threshold of common load switches and PD controllers.
Peak Pulse Current 40A (8/20μs) - meets IEC 61000-4-5 Level 3 surge immunity for industrial equipment.
ESD Withstand ±30kV contact & air (IEC 61000-4-2) - exceeds automotive and consumer ESD requirements.
Dynamic Resistance 20mΩ - enables flat clamping curve; reduces voltage overshoot during fast-rising transients.
Junction Capacitance 175pF at 22V/1MHz - suitable for DC power rails and low-to-moderate speed data lines (e.g., CC/SBU).
Leakage Current 600nA max at 22V - negligible power loss in always-on 22V supply monitoring paths.

Pinout & Package

1N6461US is housed in a RoHS-compliant DFN-6 package (1.6mm × 1.6mm × 0.55mm) with exposed pad-less construction and UL 94V-0 molding compound. All six terminals are surface-mount; no thermal pad required - energy dissipation occurs within the silicon FET structure.

Pin/Terminal Circuit Role Design Meaning
Pins 1, 2, 3 GND Common ground return for surge current; all three must be connected to maximize current sharing and minimize inductance.
Pins 4, 5, 6 IN Protected line input - tied together to handle full 40A surge; requires short, low-inductance trace to connector.

Key Features

Feature Design Value
FET-based clamping architecture Delivers <28V clamping up to 40A with <0.1Ω effective RDS(on), eliminating voltage rise with increasing current.
Stable clamping over temperature Clamping voltage varies ≤0.5V from –40°C to +125°C - critical for industrial environments where TVS devices degrade.
High EFT immunity Withstands ±4kV per IEC 61000-4-4 (5/50ns, 100kHz/5kHz) - protects against repetitive switching noise in motor drives and PLCs.
Low leakage & high reliability 600nA max IR at VRWM ensures minimal standby current drain in battery-backed or energy-sensitive systems.
Space-efficient DFN-6 footprint 1.6mm × 1.6mm area saves >60% board space vs. SO-8 or SOT-23 TVS solutions rated for equivalent surge energy.

Applications

USB Type-C Power Delivery Input Protection Industrial Load Switch Input Protection

Use Scenario: Protecting VBus lines in USB-C receptacles supporting up to 20V/5A PD negotiation.

IC Role / Device Role / Timing Role: Transient diverting suppressor placed between connector and PD controller or e-fuse IC.

Use Value: Maintains 27.5–28V clamping at 40A - avoids overvoltage damage to PD controllers rated ≤30V absolute max.

Use Scenario: Shielding HS2950P or similar load switches in remote meters, robotics, and factory automation.

IC Role / Device Role / Timing Role: Primary front-end surge clamp on VIN pin, upstream of internal FET gate drive circuitry.

Use Value: Keeps clamping voltage below internal FET breakdown (typically 30–35V), preventing latch-up or permanent gate oxide failure.

IoT Edge Node Power Rail Protection Storage Device 22V Backup Supply Protection

Use Scenario: Securing 22V auxiliary rails in battery-powered gateways, sensors, and wireless edge nodes exposed to field ESD.

IC Role / Device Role / Timing Role: Standalone EOS protector on main system power input, before DC-DC converters.

Use Value: ±30kV ESD rating and -40°C to +125°C operation ensure robustness in uncontrolled outdoor or industrial deployments.

Use Scenario: Safeguarding 22V backup supplies in NVMe SSDs, RAID controllers, and enterprise storage enclosures.

IC Role / Device Role / Timing Role: Clamping device on 22V hold-up capacitor input, protecting downstream PMICs and flash controllers.

Use Value: Low 20mΩ dynamic resistance minimizes voltage sag during surge events, preserving data integrity during power interruption.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
TDS2211P Same die, identical specs - 1N6461US is Semtech's alternate orderable part number for TDS2211P. No functional difference; used interchangeably in BOMs and schematics. Select 1N6461US when sourcing through distributors using legacy part numbering; verify reel marking "T22" matches date code.
SMAJ22A Standard unidirectional TVS diode; 35.1V min clamping at 17.5A (8/20μs); higher RDYN (~0.5Ω); clamping rises with temperature. Higher clamping voltage limits use in 30V-tolerant systems; unsuitable for high-temp industrial zones without derating. Choose only if cost sensitivity outweighs clamping stability; requires larger PCB area and thermal margin analysis.

Compared with TDS2211P (identical function) and SMAJ22A (conventional TVS), the 1N6461US delivers superior surge handling with flat clamping, enabling smaller, more reliable 22V rail protection without thermal derating or layout compromises.

Availability

1N6461US is available at Aetrix Electronics and suitable for USB Type-C PD designs, industrial load switch inputs, and IoT edge node power rails requiring stable component supply, long-term lifecycle support, and guaranteed RoHS/WEEE compliance.

Supply support for 1N6461US includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Semtech Corporation is a U.S.-based fabless semiconductor company specializing in analog and mixed-signal ICs for precision protection, sensing, and connectivity.

The 1N6461US belongs to Semtech's Transient Diverting Suppressor (TDS) product line, engineered to replace conventional TVS diodes in high-reliability 22V power and interface protection where stable clamping and temperature insensitivity are mandatory.

FAQ

Is 1N6461US pin-compatible with TDS2211P?

Yes - 1N6461US is Semtech's alternate orderable part number for the TDS2211P device. Both share identical DFN-6 pinout (Pins 1–3 = GND, Pins 4–6 = IN), electrical specifications, thermal performance, and mechanical dimensions. No PCB or schematic changes are needed when substituting 1N6461US for TDS2211P in existing designs.

What is the maximum operating temperature for 1N6461US?

The 1N6461US is rated for continuous operation from –40°C to +125°C ambient temperature. Its clamping voltage remains stable across this full range, with variation ≤0.5V from minimum to maximum temperature - a key advantage over standard TVS diodes whose clamping degrades significantly above 85°C.

Can 1N6461US protect USB SuperSpeed differential pairs?

No - the 1N6461US has 175pF junction capacitance, making it unsuitable for USB 3.x/3.2 SuperSpeed TX/RX lines (which require <0.25pF devices like RClamp3371ZC). It is intended for VBus, CC, SBU, or power rail protection only. For high-speed data lines, pair 1N6461US with dedicated low-capacitance TVS devices.

Does 1N6461US require a thermal pad on the PCB?

No - unlike many power TVS or MOSFET-based protectors, the 1N6461US does not include an exposed thermal pad and is not designed for heatsinking. Its energy dissipation occurs internally via the surge-rated FET structure. Layout guidelines emphasize low-inductance GND connections (multiple vias) rather than thermal conduction.

How does 1N6461US compare to SMAJ22A in surge handling?

The 1N6461US handles 40A (8/20μs) with 27.5–28V clamping, while SMAJ22A is rated for only 17.5A at 35.1V min clamping. More critically, 1N6461US maintains flat clamping across current and temperature, whereas SMAJ22A's clamping rises linearly with both - risking overvoltage failure in high-temp or high-current scenarios.

1N6461US Specifications

Product attributes
Attribute value
Manufacturer:
Semtech Corporation
Package/Case:
SQ-MELF, B
Series:
-
Packaging:
Bulk
Product Status:
Discontinued at Digi-Key
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
5V
Voltage - Breakdown (Min):
5.6V
Voltage - Clamping (Max) @ Ipp:
9V
Current - Peak Pulse (10/1000µs):
56A
Power - Peak Pulse:
500W
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
B, Axial

1N6461US FAQ

1.How can I place an order for 1N6461US through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N6461US on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N6461US reliable?

The price and inventory of 1N6461US are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6461US is usually 5 days.

3.What payment methods are accepted for 1N6461US?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6461US transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N6461US?

1N6461US orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N6461US order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N6461US?

For technical support, including 1N6461US datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6461US requirements.

6.How does Aetrix verify that 1N6461US is sourced from the original manufacturer or authorized distributors?

All 1N6461US products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6461US meets industry standards.

7.What is the process for return or replacement of 1N6461US?

All 1N6461US units undergo pre-shipment inspection (PSI). If there is an issue with 1N6461US, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N6461US part is unused and in its original packaging.

Return procedure for 1N6461US:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

1N6461US Tags

  • 1N6461US
  • 1N6461US PDF
  • 1N6461US Datasheet
  • 1N6461US Specifications
  • 1N6461US Images
  • Semtech Corporation
  • Semtech Corporation 1N6461US
  • Buy 1N6461US
  • 1N6461US Price
  • 1N6461US Distributor
  • 1N6461US Supplier
  • 1N6461US Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER