Semtech Corporation 1N6464
- Part No.:
- 1N6464
- Manufacturer:
- Semtech Corporation
- Category:
- TVS Diodes
- Package:
- Axial
- Datasheet:
-
1N6464.pdf
- Description:
- TVS DIODE 15VWM 26.5VC AXIAL
- Quantity:
- Payment:

- Shipping:

Inventory:7,108
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Product details
Overview
TDS2211P from Semtech is a transient diverting suppressor designed for high-energy EOS protection of 22V-rated I/O or power lines, featuring ±30kV IEC 61000-4-2 ESD immunity, 40A peak pulse current (8/20μs), and stable 27.5–28V clamping across temperature and current range - deployed in USB Type-C PD, industrial load switch inputs, and IoT device bus protection.
For engineers reviewing the TDS2211P datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, DFN-6 package layout guidance, functional role in shunt-based surge diversion, and real-world selection criteria versus conventional TVS diodes.
Technical Context
The TDS2211P uses a surge-rated FET as its primary protection element, activated by a precision trigger circuit when transient voltage exceeds breakdown - enabling near-constant clamping voltage independent of peak pulse current magnitude. Its dynamic resistance is 20mΩ (8/20μs), far lower than standard TVS diodes.
Unlike conventional TVS devices whose clamping voltage rises linearly with IPP due to fixed RDYN, the TDS2211P maintains ~27.6V clamping from 24A to 40A (1.2/50μs + 8/20μs combination waveform) and across –40°C to +125°C operating temperature - critical for USB PD and industrial equipment reliability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Voltage | 22V - defines maximum continuous DC bus voltage before leakage or conduction onset. |
| Clamping Voltage | 27.5–28V at 40A (8/20μs + 1.2/50μs combo wave) - ensures protected ICs (e.g., USB PD controllers) remain below damage threshold. |
| Peak Pulse Current | 40A (8/20μs) - meets IEC 61000-4-5 Level 4 surge immunity for industrial and USB PD applications. |
| ESD Withstand | ±30kV contact & air (IEC 61000-4-2) - exceeds automotive and industrial ESD requirements without external shielding. |
| Junction Capacitance | 175pF at 22V, 1MHz - low enough for 22V power rail protection without signal integrity impact on adjacent traces. |
| Dynamic Resistance | 20mΩ (8/20μs) - enables flat clamping curve and minimal voltage rise under high-current transients. |
| Reverse Leakage | 130–600nA at 22V - negligible power loss and thermal loading in always-on bus protection. |
Pinout & Package
Package: DFN 1.6mm × 1.6mm × 0.55mm, 6-lead, RoHS-compliant, UL 94V-0 molding compound, lead-free finish. Pin 1 marked with laser dot.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | GND | Common ground return path for surge current - all three pins must be connected to maximize current handling and minimize parasitic inductance. |
| 4, 5, 6 | IN | Protected line input - connects directly to VBus or data/power line requiring EOS suppression; parallel connection improves current sharing and thermal distribution. |
Key Features
| Feature | Design Value |
|---|---|
| FET-based shunt architecture | Enables <28V clamping across full 24–40A surge range - avoids voltage overshoot that damages USB PD controllers. |
| Constant clamping over temperature | Clamping remains stable from –40°C to +125°C - eliminates derating needed for TVS diodes in hot industrial enclosures. |
| Low dynamic resistance | 20mΩ minimizes IR drop during surge - ensures predictable clamping without current-dependent voltage rise. |
| High EFT immunity | ±4kV per IEC 61000-4-4 (5/50ns, 5kHz & 100kHz) - protects against repetitive fast transients in motor drives and PLCs. |
| Space-efficient DFN packaging | 1.6mm × 1.6mm footprint saves >60% board area vs. SO-8 TVS solutions - ideal for compact USB-C connectors and IoT modules. |
Applications
| USB Type-C Power Delivery Bus Protection | Industrial Load Switch Input Protection |
|---|---|
Use Scenario: Protecting 20V–22V VBus lines in USB-C PD ports against lightning surges, ESD, and connector hot-plug transients. IC Role / Device Role / Timing Role: Shunt-based transient diverter placed between VBus and GND, triggered within nanoseconds to clamp overvoltage before reaching PD controller. Use Value: Maintains 27.6V clamping at 40A and 125°C - prevents damage to USB PD controllers rated ≤30V absolute max, unlike TVS diodes that exceed 38V at same conditions. |
Use Scenario: Safeguarding enable and input pins of industrial-grade load switches (e.g., HS2950P) exposed to field wiring surges in remote meters or robotics. IC Role / Device Role / Timing Role: Primary front-end surge protector on VIN rail, limiting voltage seen by internal FET gate oxide and overvoltage protection circuitry. Use Value: Clamps below 28V at full 40A surge - keeps load switch's absolute maximum VIN rating (typically 30–36V) intact while avoiding thermal runaway from junction heating. |
| IoT Device Power Rail Protection | Storage Device 22V Backup Supply Protection |
Use Scenario: Securing 22V auxiliary power rails in battery-backed IoT gateways subjected to ESD during field servicing or EFT in factory automation environments. IC Role / Device Role / Timing Role: Standalone EOS suppressor on main DC input, operating continuously without bias or control signals. Use Value: 130–600nA leakage at 22V ensures minimal standby current drain - critical for multi-year battery life in edge sensors and wireless nodes. |
Use Scenario: Protecting 22V backup supply lines in NVMe SSDs or enterprise storage controllers against power-rail transients during hot-swap or PSU fault events. IC Role / Device Role / Timing Role: Low-capacitance (175pF), high-power shunt suppressor placed at connector entry point to prevent latch-up in PMICs and flash controllers. Use Value: 1120W peak pulse power rating handles high-energy surges without degradation - outperforms 600W-rated TVS diodes in sustained surge testing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ22A | Standard unidirectional TVS diode; 35.1V min clamping at 12.3A (8/20μs); higher RDYN causes clamping rise with current and temperature. | Limited to lower-energy surges; unsuitable for 40A IEC 61000-4-5 compliance or USB PD where clamping must stay ≤28V. | Use only where cost is primary constraint and surge energy is <10A; verify clamping margin at max operating temperature. |
| TPD2E001DRYR | Low-capacitance (12pF) dual-channel ESD protector; 15A peak pulse; 15V working voltage; not rated for 22V bus or 40A surges. | Designed for high-speed data lines (USB 2.0, HDMI), not power rails; insufficient voltage rating and energy handling for VBus protection. | Applicable only for DP/DM or CC lines in USB-C; never substitute for TDS2211P on VBus or load switch inputs. |
Compared with SMAJ22A and TPD2E001DRYR, the TDS2211P uniquely delivers 22V working voltage with sub-28V clamping at 40A and full temperature range - making it the only viable option for robust, space-constrained 22V power rail EOS protection in USB PD and industrial systems.
Availability
TDS2211P is available at Aetrix Electronics and suitable for USB Type-C PD interfaces, industrial load switch inputs, and IoT device power rail protection requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for TDS2211P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Semtech Corporation is a U.S.-based fabless semiconductor company specializing in analog and mixed-signal ICs for precision sensing, power management, and transient protection.
The TDS product line targets high-reliability EOS protection for next-generation interfaces like USB PD and industrial power systems - replacing legacy TVS solutions with FET-based architectures for stable clamping and thermal resilience.
FAQ
What is the primary protection mechanism used in the TDS2211P?
The TDS2211P uses a surge-rated FET as its main protection element, activated by a precision trigger circuit when transient voltage exceeds breakdown. This shunt architecture provides near-constant clamping voltage - unlike TVS diodes whose clamping rises with current. The TDS2211P achieves this via low RDS(on), ensuring reliable 27.5–28V clamping at 40A and across –40°C to +125°C.
Can the TDS2211P replace a standard TVS diode in a 22V USB PD design?
Yes - the TDS2211P is specifically engineered for 22V USB PD bus protection and offers superior performance over standard TVS diodes. It clamps at 27.6V at 40A and 125°C, whereas typical 22V TVS diodes exceed 38V under same conditions. The TDS2211P also maintains stable clamping across temperature, eliminating derating concerns that complicate TVS selection in USB PD designs.
What is the recommended PCB layout for optimal surge performance of the TDS2211P?
Place the TDS2211P as close as possible to the connector entry point. Connect all IN pins (4,5,6) via a single short, wide trace to the protected line, and tie all GND pins (1,2,3) directly to a solid ground plane using multiple vias. Avoid thermal pads - energy is dissipated internally. This layout minimizes parasitic inductance and ensures full 40A surge capability, as validated in Semtech's application notes for the TDS2211P.
Does the TDS2211P require any external bias or control signals to operate?
No - the TDS2211P is a fully passive, self-triggering device. It requires no external power, enable signals, or configuration. The internal trigger circuit activates the shunt FET automatically when transient voltage exceeds its threshold. This makes the TDS2211P ideal for always-on protection of 22V power rails in USB-C, industrial, and IoT applications without adding system complexity.
How does the TDS2211P compare to TVS diodes in terms of EFT immunity?
The TDS2211P delivers ±4kV EFT immunity per IEC 61000-4-4 (5/50ns, 5kHz and 100kHz), exceeding most standard TVS diodes rated for ≤2kV. Its FET-based architecture responds faster to repetitive fast transients and sustains performance without parameter drift. This makes the TDS2211P especially suitable for industrial PLCs, motor drives, and metering equipment where EFT stress is frequent and severe.
1N6464 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Semtech Corporation
- Package/Case:
- Axial
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 15V
- Voltage - Breakdown (Min):
- 16.4V
- Voltage - Clamping (Max) @ Ipp:
- 26.5V
- Current - Peak Pulse (10/1000µs):
- 19A
- Power - Peak Pulse:
- 500W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- Axial
1N6464 FAQ
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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
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6.How does Aetrix verify that 1N6464 is sourced from the original manufacturer or authorized distributors?
All 1N6464 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6464 meets industry standards.
7.What is the process for return or replacement of 1N6464?
All 1N6464 units undergo pre-shipment inspection (PSI). If there is an issue with 1N6464, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6464 part is unused and in its original packaging.
Return procedure for 1N6464:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6464 Tags

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ESD9B5.0ST5G
onsemi

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DESD3V3E1BL-7B
Diodes Incorporated

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ESD5Z3.3T1G
onsemi

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D5V0H1B2LP-7B
Diodes Incorporated

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D5V0P1B2LP-7B
Diodes Incorporated

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DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

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PESD2V0Y1BSFYL
Nexperia USA Inc.

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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

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D5V0L1B2WS-7
Diodes Incorporated
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