Semtech Corporation 1N6467US

Overview

1N6467US from Semtech is a transient diverting suppressor (TDS) designed for high-energy EOS protection of 22V-rated power or I/O lines, featuring ±30kV IEC 61000-4-2 ESD immunity, 40A peak pulse current (8/20μs), 27.5–28V clamping voltage at 40A, and 20mΩ dynamic resistance. It protects USB PD, USB Type-C VBUS, and load switch inputs in industrial and portable electronics.

For engineers reviewing the 1N6467US datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, DFN-6 package layout guidance, clamping stability across temperature and current, and real-world implementation context for EOS-critical bus protection.

Technical Context

The 1N6467US uses a surge-rated FET as its primary protection element, activated by a precision trigger circuit that turns on the shunt path when transient voltage exceeds breakdown. Unlike conventional TVS diodes, its clamping voltage remains nearly constant-27.5–28V-from 24A to 40A due to decreasing R_DS(on) under surge conditions.

It operates over –40°C to +125°C with stable 22V reverse stand-off voltage, <600nA leakage at VRWM, and 175pF junction capacitance at 22V/1MHz. Its functional architecture enables superior thermal and current-handling consistency compared to junction-based TVS devices.

Key Specifications

Pinout & Package

1N6467US is housed in a RoHS-compliant DFN-6 package measuring 1.6mm × 1.6mm × 0.55mm with exposed thermal pad not required. All six terminals are electrically active: three GND pins (1–3) and three IN pins (4–6), requiring parallel connection for full 40A rating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Compared with TDS2211P and SMAJ22A, the 1N6467US delivers identical performance to TDS2211P in clamping stability, surge capacity, and thermal resilience, while offering a clear advantage over SMAJ22A in high-current, wide-temperature, and high-reliability applications where consistent sub-28V protection is mandatory.

Availability

1N6467US is available at Aetrix Electronics and suitable for USB Type-C PD systems, industrial load switch inputs, notebook VBUS rails, and IoT power rail protection requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for 1N6467US includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Semtech Corporation is a U.S.-based fabless semiconductor company specializing in high-performance analog and mixed-signal ICs for precision sensing, protection, and signal integrity.

The 1N6467US belongs to Semtech's Transient Diverting Suppressor (TDS) product line, engineered specifically to replace conventional TVS diodes in high-reliability 22V power rail protection where flat clamping, temperature stability, and 40A surge handling are critical.

FAQ

What is the primary function of the 1N6467US in a circuit?

The 1N6467US functions as a transient diverting suppressor that shunts high-energy EOS events-such as ESD, EFT, and lightning surges-to ground before they damage downstream components. Unlike standard TVS diodes, it uses a triggered FET architecture to maintain a near-constant 27.5–28V clamping voltage across its full 40A surge range and operating temperature span, making the 1N6467US ideal for protecting 22V power rails in USB-C PD and industrial systems.

Does the 1N6467US require external bias or control signals to operate?

No, the 1N6467US is fully autonomous and requires no external bias, enable signals, or configuration. Its internal precision trigger circuit activates the shunt FET automatically when transient voltage exceeds the breakdown threshold. This self-contained operation makes the 1N6467US suitable for simple, robust placement directly at connectors or power inputs without additional support circuitry.

How does the 1N6467US differ from traditional TVS diodes like SMAJ22A?

The 1N6467US differs fundamentally in architecture and performance: it uses a surge-rated FET with dynamic R_DS(on) reduction under surge, yielding flat 27.5–28V clamping up to 40A and across –40°C to +125°C. In contrast, SMAJ22A is a junction-based TVS with rising clamping (35.5V @ 12.3A) and significant temperature-dependent derating. The 1N6467US thus provides superior protection margin and reliability in demanding applications.

What PCB layout practices are recommended for optimal performance of the 1N6467US?

For optimal 1N6467US performance, place it within 2mm of the protected connector or entry point. Connect all three IN pins (4–6) via a single short, wide trace to the protected line, and tie all three GND pins (1–3) directly to a solid ground plane using ≥3 vias. Avoid thermal pads or solder mask openings beneath the device - energy is dissipated internally, and parasitic inductance, not thermal mass, governs surge response.

Is the 1N6467US compliant with industry environmental and safety standards?

Yes, the 1N6467US is Pb-free, halogen-free, and RoHS/WEEE compliant. Its molding compound meets UL 94V-0 flammability rating, and it is qualified per IEC 61000-4-2 (±30kV ESD), IEC 61000-4-4 (±4kV EFT), and IEC 61000-4-5 (40A/8/20μs, ±1kV/42Ω). These certifications confirm its suitability for commercial, industrial, and portable electronics requiring certified EOS resilience.