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Semtech Corporation 1N6470US
- Part No.:
- 1N6470US
- Manufacturer:
- Semtech Corporation
- Category:
- TVS Diodes
- Package:
- SQ-MELF, G
- Datasheet:
-
1N6470US.pdf
- Description:
- TVS DIODE 6VWM 11VC G-MELF
- Quantity:
- Payment:
- Shipping:
Inventory:3,669
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Product details
Overview
1N6470US from Semtech is a transient diverting suppressor (TDS) designed for high-energy EOS protection of 22V-rated power or I/O lines, featuring ±30kV IEC 61000-4-2 ESD immunity, 40A peak pulse current (8/20μs), 27.5–28V clamping voltage at 40A, and 20mΩ dynamic resistance. It protects USB PD, USB Type-C VBus, and load switch inputs in industrial and portable electronics.
For engineers reviewing the 1N6470US datasheet, pinout, applications, or equivalent options, key selection criteria include clamping stability across temperature and current, low dynamic resistance for consistent voltage limiting, DFN-6 package layout constraints, and compatibility with 22V bus systems requiring robust surge immunity per IEC 61000-4-5.
Technical Context
The 1N6470US uses a surge-rated FET as its primary protection element, activated by a precision trigger circuit that turns on the shunt path when transient voltage exceeds breakdown. Unlike conventional TVS diodes, its clamping voltage remains nearly constant-27.5–28V-from 24A to 40A and across –40°C to +125°C due to decreasing RDS(on) under surge conditions.
It operates as a three-terminal bidirectional device: pins 4–6 serve as the protected input (IN), pins 1–3 as ground (GND), and it delivers 1120W peak pulse power with 175pF junction capacitance at 22V. Its solid-state architecture avoids junction heating limitations typical of avalanche diodes, enabling stable performance in high-temperature industrial environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Voltage | 22V - defines maximum continuous DC or RMS operating voltage on protected line without leakage or degradation |
| Clamping Voltage | 27.5–28V at 40A (8/20μs) - ensures downstream 24V-rated ICs (e.g., USB PD controllers) remain below damage threshold during surge |
| Peak Pulse Current | 40A (8/20μs) - meets IEC 61000-4-5 Level 4 surge immunity for industrial equipment and USB PD interfaces |
| ESD Withstand | ±30kV contact & air (IEC 61000-4-2) - exceeds automotive and industrial ESD requirements without derating |
| Dynamic Resistance | 20mΩ - enables flat clamping curve; limits voltage rise to <0.8V per 40A increase, critical for precision rail protection |
| Junction Capacitance | 175pF at 22V, 1MHz - compatible with DC power rails and low-speed control lines; not suitable for >100MHz signal paths |
Pinout & Package
1N6470US is housed in a RoHS-compliant DFN-6 package measuring 1.6mm × 1.6mm × 0.55mm with exposed thermal pad (no internal thermal pad required; energy dissipated in silicon). All six terminals must be connected-three GND pins for low-inductance return path, three IN pins for parallel surge current handling-to achieve rated 40A performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pins 1, 2, 3 | Ground (GND) | Low-inductance return path; all three must be soldered to solid ground plane with multiple vias to minimize impedance during 40A transients |
| Pins 4, 5, 6 | Input (IN) | Protected line connection; parallel routing required to equally share 40A surge current and prevent current crowding |
Key Features
| Feature | Design Value |
|---|---|
| Constant clamping voltage | 27.5–28V across full 24–40A range and –40°C to +125°C - eliminates need for thermal derating or current-margin oversizing |
| FET-based shunt architecture | Replaces avalanche diode with low-RDS(on) MOSFET triggered by precision reference - avoids junction heating failure mode of TVS |
| High EFT immunity | ±4kV per IEC 61000-4-4 (5/50ns, 5kHz & 100kHz) - protects against repetitive fast transients in motor drives and PLC I/O |
| Ultra-low dynamic resistance | 20mΩ - reduces clamping voltage delta to <1V over 40A, enabling tighter margin design vs. 30–40V TVS solutions |
Applications
| USB Type-C Power Delivery Bus Protection | Industrial Load Switch Input Protection |
|---|---|
Use Scenario: Protecting 20–22V VBus lines in USB-C receptacles against lightning-induced surges and hot-plug ESD events. IC Role / Device Role / Timing Role: Primary EOS shunt protector placed directly at connector, clamping transients before reaching PD controller or e-fuse. Use Value: Maintains 27.5–28V clamping at 40A and 125°C-well below 30V damage threshold of common USB PD controllers like TUSB73x or CYPD3177. |
Use Scenario: Safeguarding input of high-side load switches (e.g., HS2950P) in remote meters and robotics against 1kV/42Ω surges. IC Role / Device Role / Timing Role: Front-end transient limiter preventing gate oxide damage and overvoltage latch-up in integrated FET load switches. Use Value: Limits voltage seen by load switch VIN pin to ≤28V during 40A transients, avoiding internal FET avalanche and ensuring reliable OVP/UVLO operation. |
| IoT Device Power Rail Protection | Storage Device 22V Backup Supply Protection |
Use Scenario: Securing 22V auxiliary power rails in battery-backed IoT gateways exposed to field ESD and induced surges. IC Role / Device Role / Timing Role: Solid-state transient diverter replacing bulkier TVS arrays, minimizing board space while delivering higher surge rating. Use Value: 1.6mm × 1.6mm footprint saves >60% area vs. SOD-123 TVS solutions with comparable 40A rating, critical for compact edge nodes. |
Use Scenario: Protecting 22V backup supplies in NVMe SSDs and enterprise storage controllers from system-level EOS events. IC Role / Device Role / Timing Role: Low-capacitance (175pF), low-leakage (≤600nA) rail clamp ensuring no impact on standby current or signal integrity. Use Value: Enables direct integration on 22V supply path without filtering or buffering-unlike high-capacitance TVS diodes that risk destabilizing LDOs or buck converters. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TDS2211P | Same manufacturer, identical electrical specs and DFN-6 package; 1N6470US is Semtech's alternate ordering code for TDS2211P | No functional difference; used interchangeably in BOMs and layouts | Select based on distributor stock or tape-and-reel configuration preference |
| SMAJ22A | Standard unidirectional TVS diode; 22V VRWM, 35.5V VC @ 12.3A, 1000W PPPK; higher clamping, no temperature stability | Limited to lower-energy surges; clamping rises to ~42V at 125°C, risking PD controller damage | Only suitable where 40A surge rating and flat clamping are not required; requires larger SMC package |
Compared with TDS2211P (identical function) and SMAJ22A (higher-clamp TVS), the 1N6470US delivers superior surge margin in thermally demanding USB PD and industrial applications due to its FET-based constant-voltage clamping and 40A rating-enabling smaller footprints and eliminating thermal derating calculations.
Availability
1N6470US is available at Aetrix Electronics and suitable for USB Type-C power delivery interfaces, industrial load switch inputs, and IoT 22V rail protection requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for 1N6470US includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Semtech Corporation is a U.S.-based fabless semiconductor company specializing in high-performance analog and mixed-signal ICs for precision protection, sensing, and signal integrity.
The 1N6470US belongs to Semtech's Transient Diverting Suppressor (TDS) product line, engineered to replace conventional TVS diodes in high-reliability 22V power rail and interface protection where stable clamping across temperature and current is mandatory.
FAQ
What is the exact package type and dimensions of the 1N6470US?
The 1N6470US uses a 6-pin DFN package measuring 1.6mm × 1.6mm × 0.55mm with exposed copper pad. Pin 1 is marked by a laser dot; pins 1–3 are GND, pins 4–6 are IN. The land pattern follows Semtech's recommended layout with multiple vias to ground and straight trace routing for optimal surge current sharing.
Does the 1N6470US require external bias or control signals to operate?
No, the 1N6470US is fully autonomous and requires no external bias, enable signals, or configuration. It operates passively: the internal trigger circuit activates the shunt FET only during overvoltage transients exceeding its breakdown threshold, returning to high-impedance standby state afterward.
How does the clamping voltage of the 1N6470US compare to standard TVS diodes at elevated temperature?
At 125°C, the 1N6470US maintains 27.5–28V clamping across 24–40A, whereas standard TVS diodes like SMAJ22A exhibit rising clamping-up to ~42V at 125°C-due to positive temperature coefficient of VBR. This makes the 1N6470US uniquely suited for high-ambient industrial deployments.
Can the 1N6470US be used on bidirectional data lines such as USB DP/DM?
No-the 1N6470US is optimized for unidirectional 22V power rails and high-current I/O lines. Its 175pF capacitance and lack of differential or low-capacitance variants make it unsuitable for high-speed data lines. For USB SuperSpeed lanes, Semtech recommends RClamp3371ZC (<0.25pF).
Is the 1N6470US pin-compatible with other Semtech TDS devices like TDS2411P?
No-1N6470US (TDS2211P) has a 22V working voltage and specific DFN-6 pinout (3×GND / 3×IN); TDS2411P is a 24V variant with identical package and pinout but different internal trigger and clamping thresholds. They are not drop-in replacements without verifying system voltage margins.
1N6470US Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Semtech Corporation
- Package/Case:
- SQ-MELF, G
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 6V
- Voltage - Breakdown (Min):
- 6.5V
- Voltage - Clamping (Max) @ Ipp:
- 11V
- Current - Peak Pulse (10/1000µs):
- 137A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- G-MELF (D-5C)
1N6470US FAQ
1.How can I place an order for 1N6470US through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6470US on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6470US reliable?
The price and inventory of 1N6470US are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6470US is usually 5 days.
3.What payment methods are accepted for 1N6470US?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6470US transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6470US?
1N6470US orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6470US order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6470US?
For technical support, including 1N6470US datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6470US requirements.
6.How does Aetrix verify that 1N6470US is sourced from the original manufacturer or authorized distributors?
All 1N6470US products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6470US meets industry standards.
7.What is the process for return or replacement of 1N6470US?
All 1N6470US units undergo pre-shipment inspection (PSI). If there is an issue with 1N6470US, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6470US part is unused and in its original packaging.
Return procedure for 1N6470US:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6470US Tags
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Toshiba Semiconductor and Storage
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