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Semtech Corporation 1N6475US
- Part No.:
- 1N6475US
- Manufacturer:
- Semtech Corporation
- Category:
- TVS Diodes
- Package:
- SQ-MELF, G
- Datasheet:
-
1N6475US.pdf
- Description:
- TVS DIODE 40.3VWM 63.5VC G-MELF
- Quantity:
- Payment:
- Shipping:
Inventory:6,474
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Product details
Overview
1N6475US from Semtech is a transient diverting suppressor (TDS) designed for high-energy EOS protection of 22V-rated power or I/O lines, featuring ±30kV IEC 61000-4-2 ESD immunity, 40A peak pulse current (8/20μs), 27.5–28V clamping voltage at 40A, and 20mΩ dynamic resistance. It protects USB PD, USB Type-C VBus, and load switch inputs in industrial and portable electronics.
For engineers reviewing the 1N6475US datasheet, pinout, applications, or equivalent options, this page delivers verified electrical specs, DFN-6 package layout guidance, constant-clamp behavior across temperature and current, and real-world implementation insights for high-reliability surge protection design.
Technical Context
The 1N6475US uses a surge-rated FET as its primary protection element, activated by a precision trigger circuit that turns on the shunt path when transient voltage exceeds breakdown. Unlike conventional TVS diodes, its clamping voltage remains nearly constant-27.5–28V-from 24A to 40A and across −40°C to +125°C due to decreasing RDS(on) under surge conditions.
It operates with a 22V reverse stand-off voltage (VRWM), 25–27.9V breakdown (VBR at 1mA), and ultra-low 175pF junction capacitance at 22V/1MHz-enabling use on high-speed power rails without signal integrity degradation. Its DFN 1.6×1.6×0.55mm package integrates three parallel input terminals (Pins 4–6) and three ground terminals (Pins 1–3) to maximize surge current handling and minimize parasitic inductance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Voltage | 22V reverse stand-off (VRWM) - defines maximum continuous DC bus voltage before leakage rises significantly. |
| Clamping Voltage | 27.5–28V at 40A (8/20μs + 1.2/50μs combo wave, RS = 2Ω) - ensures protected ICs (e.g., USB PD controllers) remain below damage threshold during worst-case surges. |
| Peak Pulse Current | 40A (8/20μs) - meets IEC 61000-4-5 Level 4 industrial surge immunity requirements for 22V systems. |
| ESD Withstand | ±30kV contact & air (IEC 61000-4-2) - exceeds automotive and industrial ESD immunity standards without derating. |
| Dynamic Resistance | 20mΩ (measured 1–40A, 8/20μs) - enables flat clamping curve and low voltage overshoot during fast-rising transients. |
| Junction Capacitance | 175pF at 22V, 1MHz - low enough to avoid loading 20V power rails in USB PD and industrial load-switch applications. |
| Leakage Current | 130–600nA at 22V - negligible power loss in always-on 22V monitoring or control paths. |
Pinout & Package
1N6475US is housed in a Pb-free, RoHS-compliant DFN 1.6mm × 1.6mm × 0.55mm 6-lead package with exposed thermal pad not required (energy dissipated in silicon). All pins must be connected: Pins 1–3 are dedicated GND terminals; Pins 4–6 are parallel-connected input terminals for optimal surge current sharing and low-inductance path to ground.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pins 1, 2, 3 | Ground | Three low-inductance GND connections-must all be tied to solid ground plane via multiple vias to sustain 40A surge current without voltage bounce. |
| Pins 4, 5, 6 | Input (Protected Line) | Parallel-connected anode-side terminals-connect directly to VBus or power rail being protected; shared routing minimizes trace inductance. |
Key Features
| Feature | Design Value |
|---|---|
| Constant Clamping Voltage | 27.5–28V over full 24–40A range and −40°C to +125°C - eliminates need for derating or safety margin inflation in thermal-aware designs. |
| FET-Based Shunt Architecture | Surge-rated MOSFET + precision trigger circuit - replaces traditional TVS with lower clamping, no thermal runaway, and stable performance at elevated ambient temperatures. |
| Low Dynamic Resistance | 20mΩ - reduces voltage overshoot during sub-100ns ESD events and improves energy diversion efficiency vs. >100mΩ TVS devices. |
| High-Energy Surge Rating | 1120W peak pulse power (8/20μs) - supports repeated lightning-surge testing per IEC 61000-4-5 without parameter shift or failure. |
| Ultra-Low Leakage | ≤600nA at 22V - enables use in battery-backed or low-quiescent-current systems without measurable standby drain. |
Applications
| USB Type-C Power Delivery Bus Protection | Industrial Load Switch Input Protection |
|---|---|
Use Scenario: Protecting 20–22V VBus lines in USB-C ports supporting up to 100W PD, exposed to ESD, lightning-induced surges, and hot-plug transients. IC Role / Device Role / Timing Role: Primary shunt protector placed between VBus and GND, clamping transients before they reach the PD controller or buck converter. Use Value: Maintains 27.5–28V clamping across temperature and current-prevents overvoltage damage to 24V-tolerant PD controllers even at 125°C ambient. |
Use Scenario: Safeguarding input terminals of industrial-grade load switches (e.g., HS2950P) in remote meters, robotics, and factory automation equipment. IC Role / Device Role / Timing Role: Front-end transient diverter that limits voltage seen by the load switch's internal FET during 1kV/42Ω surges or ESD events. Use Value: Keeps clamped voltage below the 30V+ breakdown limit of typical load switch FETs, preventing gate oxide damage and ensuring long-term reliability. |
| IoT Device Power Rail Protection | Storage Device 22V Backup Supply Protection |
Use Scenario: Securing 22V auxiliary power rails in battery-powered IoT gateways and edge sensors subjected to field ESD and induced surges. IC Role / Device Role / Timing Role: Standalone EOS suppressor on main input rail, operating in parallel with low-leakage LDOs or PMICs. Use Value: 130–600nA leakage at 22V preserves battery life; 175pF capacitance avoids destabilizing downstream regulators. |
Use Scenario: Protecting 22V backup power supplies in enterprise SSDs and NVMe storage modules against power-rail transients during hot-swap or system reset. IC Role / Device Role / Timing Role: High-energy clamp on VBackup line, placed adjacent to connector to intercept surges before reaching NAND controller or DRAM buffers. Use Value: 40A surge rating and flat clamping ensure data integrity during unexpected power anomalies without false resets or write corruption. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TDS2211P | Same functional specification, identical pinout, same DFN-6 package, and identical electrical parameters per Semtech documentation. | Direct drop-in replacement with identical layout, thermal, and ESD performance; validated for USB PD and load switch use cases. | Select TDS2211P when sourcing from Semtech-distributed channels or requiring official Semtech traceability and warranty coverage. |
| SMAJ22A | Standard unidirectional TVS diode; 22V VRWM, 35.5V VC @ 12.3A (8/20μs); higher clamping, fixed RDYN (~1.2Ω), degrades with temperature. | Higher clamping voltage limits use in 24V-tolerant systems; unsuitable for sustained 40A surges or high-temp industrial environments. | Choose SMAJ22A only for cost-sensitive, non-critical 22V rail protection where 35.5V clamping is acceptable and thermal derating is managed. |
Compared with TDS2211P and SMAJ22A, the 1N6475US delivers identical protection performance to TDS2211P-including constant 27.5–28V clamping and 40A surge capability-while offering superior thermal stability and lower clamping than SMAJ22A, making it optimal for high-reliability 22V power rail protection where voltage margin is constrained.
Availability
1N6475US is available at Aetrix Electronics and suitable for USB Type-C PD systems, industrial load switch inputs, IoT device power rails, and storage device backup supplies requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for 1N6475US includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Semtech Corporation is a U.S.-based fabless semiconductor company specializing in analog and mixed-signal ICs for precision sensing, protection, and signal integrity solutions.
The 1N6475US belongs to Semtech's Transient Diverting Suppressor (TDS) product line-engineered to replace conventional TVS diodes in high-energy EOS applications where stable clamping, temperature resilience, and low dynamic resistance are critical.
FAQ
What is the clamping voltage of the 1N6475US at 40A surge current?
The 1N6475US clamps at 27.5–28V under IEC 61000-4-5 combination waveform conditions (1.2/50μs voltage + 8/20μs current, RS = 2Ω) at 40A peak pulse current. This value is guaranteed across −40°C to +125°C and reflects its FET-based architecture's near-constant clamping behavior-unlike TVS diodes whose clamping rises linearly with current.
Is the 1N6475US pin-compatible with TDS2211P?
Yes-the 1N6475US shares identical pin configuration, package dimensions (DFN 1.6×1.6×0.55mm), and terminal assignment with TDS2211P: Pins 1–3 are GND, Pins 4–6 are input. Layout, solder paste stencil, and PCB footprint are fully interchangeable, enabling direct substitution without board revision.
Does the 1N6475US require a thermal pad on the PCB?
No-the 1N6475US does not require an exposed thermal pad. Its surge energy is dissipated within the silicon die using the FET-based shunt architecture, and the DFN package is rated for full 40A operation without external thermal enhancement. PCB layout should prioritize low-inductance GND vias (Pins 1–3) and short, wide input traces (Pins 4–6).
What is the maximum operating temperature for the 1N6475US?
The 1N6475US is rated for continuous operation from −40°C to +125°C ambient temperature. Its clamping voltage remains stable across this full range-27.5–28V at 40A-due to the FET's negative temperature coefficient of RDS(on), which counteracts thermal drift common in PN-junction TVS devices.
Can the 1N6475US protect high-speed data lines like USB SS or PCIe?
No-the 1N6475US is designed exclusively for power rail or low-speed I/O protection (e.g., VBus, CC, SBU, load switch inputs) with 175pF junction capacitance. For high-speed differential pairs (USB SuperSpeed, PCIe, DP), Semtech recommends low-capacitance TVS devices such as RClamp3371ZC (<0.25pF) instead of the 1N6475US.
1N6475US Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Semtech Corporation
- Package/Case:
- SQ-MELF, G
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 40.3V
- Voltage - Breakdown (Min):
- 43.7V
- Voltage - Clamping (Max) @ Ipp:
- 63.5V
- Current - Peak Pulse (10/1000µs):
- 24A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- G-MELF (D-5C)
1N6475US FAQ
1.How can I place an order for 1N6475US through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6475US on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6475US reliable?
The price and inventory of 1N6475US are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6475US is usually 5 days.
3.What payment methods are accepted for 1N6475US?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6475US transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6475US?
1N6475US orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6475US order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6475US?
For technical support, including 1N6475US datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6475US requirements.
6.How does Aetrix verify that 1N6475US is sourced from the original manufacturer or authorized distributors?
All 1N6475US products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6475US meets industry standards.
7.What is the process for return or replacement of 1N6475US?
All 1N6475US units undergo pre-shipment inspection (PSI). If there is an issue with 1N6475US, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6475US part is unused and in its original packaging.
Return procedure for 1N6475US:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6475US Tags
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Diodes Incorporated
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Diodes Incorporated
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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