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Semtech Corporation 1N6476US
- Part No.:
- 1N6476US
- Manufacturer:
- Semtech Corporation
- Category:
- TVS Diodes
- Package:
- SQ-MELF, G
- Datasheet:
-
1N6476US.pdf
- Description:
- TVS DIODE 51.6VWM 78.5VC G-MELF
- Quantity:
- Payment:
- Shipping:
Inventory:2,712
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Product details
Overview
1N6476US from Semtech is a transient diverting suppressor (TDS) designed for high-energy EOS protection of 22V-rated power or I/O lines, featuring ±30kV IEC 61000-4-2 ESD immunity, 40A peak pulse current (8/20μs), 27.5–28V clamping voltage at 40A, and 20mΩ dynamic resistance. It protects USB PD, USB Type-C VBUS, and load switch inputs in industrial and portable electronics.
For engineers reviewing the 1N6476US datasheet, pinout, applications, or equivalent options, key selection criteria include clamping stability across temperature and current, low dynamic resistance for consistent voltage limiting, DFN-6 footprint compatibility, and compliance with IEC 61000-4-2/4-4/4-5 surge standards.
Technical Context
The 1N6476US uses a surge-rated FET as its primary protection element, activated by a precision trigger circuit that turns on the shunt path when transient voltage exceeds breakdown. Unlike conventional TVS diodes, its clamping voltage remains nearly constant - 27.5–28V across 24–40A and −40°C to +125°C - due to decreasing RDS(on) under surge conditions.
It operates with a 22V reverse stand-off voltage (VRWM), 25–27.9V breakdown (VBR at 1mA), and exhibits only 130–600nA leakage at VRWM. Its 175pF junction capacitance at 22V/1MHz and 0.5V forward voltage support low-interference protection without signal distortion in DC-coupled bus applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Stand-Off Voltage | 22 V - Maximum continuous operating voltage before clamping activation; matches 20V USB PD bus with 10% margin. |
| Clamping Voltage | 27.5–28 V at 40A (8/20μs) - Limits transient overvoltage to safe levels for downstream 30V-tolerant ICs like USB PD controllers. |
| Peak Pulse Current | 40 A (8/20μs) - Withstands industrial-level surges per IEC 61000-4-5, including ±1kV combo-wave (RS = 42Ω). |
| ESD Withstand | ±30 kV contact & air (IEC 61000-4-2) - Eliminates need for secondary ESD stages in handheld and connector-facing designs. |
| Dynamic Resistance | 20 mΩ - Ensures minimal voltage rise under increasing surge current, enabling stable clamping behavior. |
| Junction Capacitance | 175 pF at 22V/1MHz - Low enough to avoid signal integrity degradation on 22V power rails without filtering penalties. |
Pinout & Package
1N6476US is housed in a Pb-free, RoHS-compliant DFN-6 package measuring 1.6 mm × 1.6 mm × 0.55 mm with exposed thermal pad not required. All six terminals are electrically active: three parallel input pins and three parallel ground pins for low-inductance, high-current surge conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pins 1, 2, 3 | GND | Common ground return path; all three must be connected to minimize inductance and maximize 40A surge handling. |
| Pins 4, 5, 6 | IN | Parallel-connected protected line input; ties directly to VBUS or power rail requiring 22V EOS protection. |
Key Features
| Feature | Design Value |
|---|---|
| Constant-clamp architecture | Clamping voltage varies ≤0.5V across full 24–40A range and −40°C to +125°C - eliminates derating uncertainty in thermal designs. |
| FET-based shunt topology | Replaces traditional TVS junctions with low-RDS(on) MOSFET, reducing energy dissipation in silicon and improving reliability under repeated surges. |
| Low dynamic resistance | 20 mΩ enables near-linear current sharing across parallel pins, preserving voltage margin during multi-pulse events. |
| High EFT immunity | ±4 kV per IEC 61000-4-4 (5/50 ns, 5 kHz & 100 kHz) - protects against fast repetitive bursts common in motor drives and switching power supplies. |
Applications
| USB Type-C VBUS Protection | Industrial Load Switch Input Protection |
|---|---|
|
Use Scenario: Protecting 20V USB Power Delivery bus lines against lightning-induced surges and hot-plug ESD. IC Role / Device Role / Timing Role: Primary EOS shunt suppressor placed at Type-C connector, clamping transients before reaching PD controller and buck converter. Use Value: Maintains 27.5–28V clamping across temperature - avoids overvoltage damage to 30V-rated PD ICs where standard TVS would exceed 38V at 125°C. |
Use Scenario: Safeguarding enable and input pins of industrial-grade load switches (e.g., HS2950P) against 40A surges in remote meters and robotics. IC Role / Device Role / Timing Role: Front-end transient diverter that limits voltage seen by internal FET gate oxide and overvoltage protection circuitry. Use Value: Prevents latch-up or permanent gate oxide rupture by holding clamping below 30V - critical for switches with 30V absolute max ratings. |
| IoT Device Power Rail Protection | Notebook/Tablet DC Power Input |
|
Use Scenario: Securing 12–24V system rails in battery-powered IoT edge nodes exposed to ESD during field servicing or connector mating. IC Role / Device Role / Timing Role: Single-device solution replacing multi-stage TVS+filter networks, reducing BOM count and board area. Use Value: 1.6 mm × 1.6 mm DFN-6 saves >60% area vs. SOT-23 TVS while delivering higher surge rating and tighter clamping control. |
Use Scenario: Protecting 20V adapter input rails in ultrabooks and tablets against accidental AC line transients and ESD coupling through barrel jacks. IC Role / Device Role / Timing Role: First-line defense between input connector and DC-DC front-end, absorbing energy before it reaches input capacitors and regulators. Use Value: 175 pF capacitance avoids resonance or ripple amplification issues common with higher-capacitance TVS devices on sensitive power inputs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ22A | Standard unidirectional TVS diode; 35.1V clamping at 12.3A (8/20μs); no constant-clamp behavior; 1.5× higher clamping voltage at rated current. | Requires higher surge derating at elevated temperatures; less suitable for 30V-tolerant ICs in thermally constrained enclosures. | Select SMAJ22A only if cost sensitivity outweighs clamping precision and thermal stability requirements. |
| TDS2211P | Same functional family and pinout; identical 22V VRWM, 40A rating, and DFN-6 package; differs only in marking code and reel packaging (TDS2211P.C vs. 1N6476US). | No functional or layout difference; direct second-source option with identical electrical and thermal performance. | 1N6476US and TDS2211P are interchangeable in design - choose based on distributor availability and traceability preferences. |
Compared with SMAJ22A, 1N6476US delivers 10.6V lower clamping at full surge current and stable performance across temperature, while TDS2211P offers identical specs with alternate part numbering - making 1N6476US optimal for designs prioritizing voltage margin and thermal robustness.
Availability
1N6476US is available at Aetrix Electronics and suitable for USB Type-C power delivery systems, industrial load switch interfaces, and IoT device power rails requiring stable component supply, long-term lifecycle support, and guaranteed RoHS/WEEE compliance.
Supply support for 1N6476US includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Semtech Corporation is a U.S.-based fabless semiconductor company specializing in high-performance analog and mixed-signal ICs for power management, protection, and signal integrity.
The 1N6476US belongs to Semtech's Transient Diverting Suppressor (TDS) product line, engineered to replace conventional TVS diodes in high-reliability 22V power rail protection where clamping stability and surge endurance are critical.
FAQ
What is the maximum operating temperature range for the 1N6476US?
The 1N6476US is rated for continuous operation from −40°C to +125°C ambient temperature. Its clamping voltage remains stable across this full range - varying by less than 0.5V from −40°C to +125°C at 40A - unlike conventional TVS diodes whose clamping rises significantly with temperature. This makes the 1N6476US especially suitable for automotive under-hood or industrial enclosure applications where thermal margins are tight.
Does the 1N6476US require a thermal pad on the PCB?
No, the 1N6476US does not require a thermal pad. Its DFN-6 package dissipates surge energy primarily through its low-inductance pin connections - pins 1–3 (GND) and 4–6 (IN) - rather than through substrate conduction. The datasheet explicitly states "no thermal pad is needed" because transient energy is handled via metal routing and bond wire paths, not junction heating. PCB layout should prioritize short, wide traces and multiple vias to ground plane instead of thermal relief.
How does the 1N6476US differ from standard TVS diodes in clamping behavior?
The 1N6476US uses a triggered FET shunt architecture, resulting in nearly constant clamping voltage (27.5–28V) across its full 24–40A surge range and entire −40°C to +125°C operating temperature range. In contrast, standard TVS diodes follow VC = VBR + IPP × RDYN, causing clamping to rise linearly with current and temperature - e.g., a typical 22V TVS may clamp above 38V at 125°C and 24A. This makes the 1N6476US more predictable and safer for protecting 30V-tolerant ICs.
Can the 1N6476US be used on data lines such as USB SuperSpeed differential pairs?
No, the 1N6476US is not suitable for high-speed data lines like USB SuperSpeed (TX/RX), DisplayPort, or HDMI. Its 175pF junction capacitance would severely degrade signal integrity on >5 Gbps links. It is specifically designed for DC-coupled power rails and low-frequency I/O lines (e.g., VBUS, CC, SBU, enable pins). For data line protection, Semtech recommends low-capacitance devices like RClamp3371ZC (<0.25pF) alongside the 1N6476US in complete interface solutions.
Is the 1N6476US pin-compatible with other Semtech TDS devices?
The 1N6476US shares the same DFN-6 (1.6 mm × 1.6 mm) package and identical pin configuration (pins 1–3 = GND, pins 4–6 = IN) with TDS2211P and other members of the TDS22xx family. However, voltage ratings differ across the family - e.g., TDS1211P is rated for 12V VRWM. So while mechanical layout is identical, electrical substitution requires verification of working voltage, clamping level, and surge rating for the target application.
1N6476US Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Semtech Corporation
- Package/Case:
- SQ-MELF, G
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 51.6V
- Voltage - Breakdown (Min):
- 54V
- Voltage - Clamping (Max) @ Ipp:
- 78.5V
- Current - Peak Pulse (10/1000µs):
- 19A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- G-MELF (D-5C)
1N6476US FAQ
1.How can I place an order for 1N6476US through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6476US on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6476US reliable?
The price and inventory of 1N6476US are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6476US is usually 5 days.
3.What payment methods are accepted for 1N6476US?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6476US transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6476US?
1N6476US orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6476US order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6476US?
For technical support, including 1N6476US datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6476US requirements.
6.How does Aetrix verify that 1N6476US is sourced from the original manufacturer or authorized distributors?
All 1N6476US products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6476US meets industry standards.
7.What is the process for return or replacement of 1N6476US?
All 1N6476US units undergo pre-shipment inspection (PSI). If there is an issue with 1N6476US, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6476US part is unused and in its original packaging.
Return procedure for 1N6476US:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6476US Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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