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Microchip Technology 1N6630US
- Part No.:
- 1N6630US
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, E
- Datasheet:
-
1N6630US.pdf
- Description:
- DIODE GEN PURP 900V 1.4A D-5B
- Quantity:
- Payment:
- Shipping:
Inventory:3,216
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Product details
Overview
1N6630US from Microsemi is an ultrafast recovery glass rectifier diode in a hermetically sealed voidless surface-mount package (D-5B/E), rated for 900 V working peak reverse voltage, 1.4 A average forward current at 25°C, and 50 ns high-current reverse recovery time. It serves as a robust power conversion element in radiation-hardened military switching power supplies requiring low forward loss and controlled avalanche capability.
For engineers reviewing the 1N6630US datasheet, 1N6630US pinout, 1N6630US application, or 1N6630US equivalent, this part delivers verified ultrafast switching performance (trr = 50 ns @ 2 A), MIL-PRF-19500/590 qualification (JANTXV level), and hermetic reliability for high-reliability embedded power systems where failure tolerance is non-negotiable.
Technical Context
This diode employs a Category I metallurgical bond and triple-layer passivation to ensure stable junction behavior under thermal cycling and radiation exposure. Its voidless hard-glass construction with tungsten slugs and copper endcaps enables low thermal resistance (RθJEC = 6.5°C/W) and high surge survivability (75 A @ 8.3 ms).
The device operates across –65°C to +150°C junction temperature range and exhibits tightly specified electrical parameters: VF = 1.40 V @ 1.4 A (25°C), IR ≤ 2.0 µA @ 900 V, and capacitance of 40 pF @ 10 V - all validated per MIL-STD-750 test methods.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 900 V - Maximum sustainable reverse voltage across full operating temperature range without breakdown. |
| IF(AV) @ TA=25°C | 1.40 A - Continuous forward current rating on PCB with controlled thermal resistance; derates 0.80%/°C above 25°C. |
| trr (High Current) | 50 ns - Reverse recovery time measured at IF = 2 A, di/dt = 100 A/µs; enables >1 MHz switching in SMPS designs. |
| VF @ 1.4 A | 1.40 V - Forward voltage drop at nominal DC load; determines conduction loss and thermal dissipation in rectification stage. |
| RθJEC | 6.5°C/W - Junction-to-endcap thermal resistance; supports direct heatsinking via endcaps in high-power density layouts. |
| IRM (rec) | 4.2 A - Peak reverse recovery current during commutation; critical for snubber design and EMI filtering. |
| Capacitance @ 10 V | 40 pF - Junction capacitance affecting high-frequency noise coupling and switching speed in resonant topologies. |
Pinout & Package
Package: Hermetically sealed voidless glass D-5B (also designated Package "E"), with copper endcaps having Sn/Pb finish and cathode band marking. Dimensions: BL = 5.08–5.72 mm, BD = 3.48–3.76 mm, ECT = 0.48–0.711 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to input side of bridge or converter stage; must withstand peak surge currents up to 75 A. |
| Cathode | Forward current exit / reverse blocking terminal | Marked by visible band; handles full VRWM (900 V) and supports controlled avalanche during transients. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal delamination risk and moisture ingress, enabling >20-year field life in space-grade environments. |
| Category I metallurgical bond | Guarantees mechanical integrity of die attach under shock/vibration and thermal stress per MIL-PRF-19500/590. |
| Triple-layer passivation | Prevents surface leakage and ion migration, maintaining IR ≤ 2.0 µA @ 900 V over lifetime and radiation exposure. |
| JANTXV qualification | Fully screened to MIL-PRF-19500/590 Level V, including burn-in, temperature cycling, and lot acceptance testing. |
| Controlled avalanche capability | Rated peak reverse power handling enables safe clamping during inductive turn-off without catastrophic failure. |
Applications
| Military Switching Power Supply | Aerospace DC-DC Converter |
|---|---|
Use Scenario: Primary-side rectification in 28 V or 115 V AC-DC converters deployed in airborne avionics bays. IC Role / Device Role / Timing Role: Ultrafast power rectifier handling 900 V reverse stress and 2 A nominal output current. Use Value: 50 ns trr minimizes switching losses at 200–500 kHz operation; hermetic seal ensures reliability in wide-temperature, high-vibration environments. |
Use Scenario: Output rectification in radiation-tolerant isolated DC-DC modules for satellite bus regulation. IC Role / Device Role / Timing Role: High-reliability output diode in synchronous or asymmetrical half-bridge topologies. Use Value: Inherent radiation hardness (per MicroNote 050) and 6.5°C/W RθJEC enable stable operation without derating in vacuum thermal conditions. |
| Tactical Vehicle Power System | Undersea Sonar Transmitter Supply |
Use Scenario: Input rectification in ruggedized 270 V DC-DC front-ends for armored vehicle electronics. IC Role / Device Role / Timing Role: Surge-tolerant rectifier subjected to load dump transients and EMP-like events. Use Value: 75 A peak forward surge rating and controlled avalanche behavior prevent failure during 120 V/100 ms transients. |
Use Scenario: High-voltage pulse charging circuit for piezoelectric transducers in deep-ocean sonar arrays. IC Role / Device Role / Timing Role: Fast-recovery switch in capacitor-charging discharge paths requiring precise timing control. Use Value: Low 40 pF junction capacitance and 12 V VFRM limit ringing and timing jitter during microsecond-scale pulses. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6629US | Lower VRWM (800 V), identical trr (50 ns), same package and screening level. | Suitable where system peak reverse voltage stays below 800 V; offers same reliability and thermal performance. | Select when design margin allows 100 V lower reverse rating to reduce cost or improve availability. |
| 1N6631US | Higher VRWM (1000 V), longer trr (60 ns), higher VF (1.60 V @ 1.4 A), same JANTXV qualification. | Used in 1 kV-class systems where slower recovery is acceptable for improved avalanche energy handling. | Choose when reverse voltage margin exceeds 900 V and slightly reduced switching speed is acceptable for enhanced ruggedness. |
Compared with 1N6629US and 1N6631US, the 1N6630US uniquely balances 900 V VRWM, 50 ns trr, and 1.40 V VF - making it optimal for 270–400 V DC-link rectification where both voltage headroom and switching efficiency are constrained.
Availability
1N6630US is available at Aetrix Electronics and suitable for military switching power supplies, aerospace DC-DC converters, and tactical vehicle power systems requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for 1N6630US includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and defense-grade analog and discrete components.
The 1N6630US belongs to Microsemi's legacy ultrafast rectifier family designed specifically for MIL-PRF-19500/590-compliant applications demanding hermetic reliability, controlled avalanche, and extended temperature operation.
FAQ
What is the maximum working peak reverse voltage for the 1N6630US?
The 1N6630US has a specified working peak reverse voltage (VRWM) of 900 V, validated across its full operating junction temperature range (–65°C to +150°C). This rating reflects sustained reverse bias capability without breakdown under MIL-PRF-19500/590 test conditions and is distinct from transient or avalanche limits.
Is the 1N6630US qualified to MIL-PRF-19500/590, and what level?
Yes, the 1N6630US is qualified to MIL-PRF-19500/590 at JANTXV level, which includes full screening for burn-in, temperature cycling, and lot acceptance testing. The "US" suffix denotes the surface-mount D-5B package variant meeting the same military reliability requirements as axial-leaded equivalents.
What is the reverse recovery time of the 1N6630US, and how is it measured?
The 1N6630US has a high-current reverse recovery time (trr) of 50 ns, measured per MIL-STD-750 Method 4031 Condition D at IF = 2 A and di/dt = 100 A/µs. A separate low-current trr of 50 ns is also specified under IF = 0.5 A conditions, confirming consistent ultrafast behavior across operating ranges.
Does the 1N6630US have radiation hardness certification?
Yes, the 1N6630US is inherently radiation-hardened as documented in Microsemi MicroNote 050. Its voidless glass construction, Category I bond, and triple-layer passivation provide proven tolerance to total ionizing dose (TID) and displacement damage, supporting use in space and nuclear environments without additional shielding.
What is the thermal resistance junction-to-endcap (RθJEC) for the 1N6630US, and why does it matter?
The 1N6630US has a thermal resistance of 6.5°C/W from junction to endcap (RθJEC), enabling direct thermal path conduction through its copper endcaps. This value is critical for high-power-density designs where PCB copper alone cannot dissipate heat - allowing integration with metal-core substrates or chassis-mounted heatsinks without solder joint fatigue.
1N6630US Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, E
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 900 V
- Current - Average Rectified (Io):
- 1.4A
- Voltage - Forward (Vf) (Max) @ If:
- 1.7 V @ 3 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 50 ns
- Current - Reverse Leakage @ Vr:
- 4 µA @ 100 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D-5B
- Operating Temperature - Junction:
- -65°C ~ 150°C
1N6630US FAQ
1.How can I place an order for 1N6630US through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6630US on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6630US reliable?
The price and inventory of 1N6630US are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6630US is usually 5 days.
3.What payment methods are accepted for 1N6630US?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6630US transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6630US?
1N6630US orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6630US order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6630US?
For technical support, including 1N6630US datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6630US requirements.
6.How does Aetrix verify that 1N6630US is sourced from the original manufacturer or authorized distributors?
All 1N6630US products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6630US meets industry standards.
7.What is the process for return or replacement of 1N6630US?
All 1N6630US units undergo pre-shipment inspection (PSI). If there is an issue with 1N6630US, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6630US part is unused and in its original packaging.
Return procedure for 1N6630US:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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