Microchip Technology 1N6675

Overview

1N6675 from Microsemi is a hermetically sealed 0.2 A Schottky barrier rectifier with 20 V reverse voltage rating, 0.37 V forward voltage at 20 mA, and 50 pF reverse capacitance at 1.0 MHz. It operates from –65°C to +125°C and is used in low-loss DC-DC converter output stages and EMI-sensitive RF power supply rails.

For engineers reviewing the 1N6675 datasheet, 1N6675 pinout, 1N6675 application, or 1N6675 equivalent, key selection criteria include its low VF at light load, hermetic DO-35 package, thermal resistance of 250 °C/W, and guaranteed reverse leakage ≤5.0 µA at +25°C - critical for high-reliability aerospace and military power conditioning.

Technical Context

The 1N6675 uses a metallurgically bonded double-plug construction to achieve stable Schottky junction characteristics across temperature. Its cathode-banded polarity and copper-clad steel leads with tin/lead finish support reliable soldering and long-term hermeticity in harsh environments.

Rated for 0.2 A average rectified forward current at TL = +100°C (with 3/8″ lead length), it derates linearly at 8.0 mA/°C above that temperature. Reverse capacitance remains tightly controlled at 50 pF @ VR = 0 V, f = 1.0 MHz - enabling predictable high-frequency filtering behavior.

Key Specifications

Pinout & Package

Package: Hermetically sealed DO-35 glass axial package with cathode band marking; lead material is copper-clad steel, finished with tin/lead.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with DSB0.2A20 and 1N6676, the 1N6675 provides optimal balance of PIV margin, low-leakage integrity, and legacy qualification pedigree - making it preferred for space-constrained, high-reliability 20 V rectification where derating to 12 V is acceptable.

Availability

1N6675 is available at Aetrix Electronics and suitable for avionics power supplies, military radio bias rails, and satellite payload DC-DC converters requiring stable component supply with full MIL-PRF-19500/610 traceability.

Supply support for 1N6675 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.

The 1N6675 belongs to Microsemi's legacy MIL-qualified Schottky rectifier family, engineered specifically for high-stability, hermetic power conversion in mission-critical systems where parameter drift and long-term reliability are non-negotiable.

FAQ

What is the maximum average forward current rating for the 1N6675?

The 1N6675 is rated for 0.2 A average rectified forward current at a lead temperature (TL) of +100°C with 3/8″ lead length. Above +100°C, it derates linearly at 8.0 mA per degree Celsius. This rating reflects its use in thermally constrained, high-reliability applications where sustained conduction must remain within verified thermal limits - a key constraint in the 1N6675 design.

Is the 1N6675 suitable for surface-mount assembly?

No, the 1N6675 uses a through-hole DO-35 axial glass package with radial copper-clad steel leads. It is not compatible with SMT reflow or wave soldering processes. The 1N6675 requires axial through-hole mounting and hand- or selective-soldering - consistent with its heritage in ruggedized military and aerospace PCBs where mechanical robustness is prioritized over density.

Does the 1N6675 have radiation hardness certification?

The 1N6675 is not individually radiation-hardened, but it is qualified per MIL-PRF-19500/610 and has been widely deployed in radiation-tolerant systems due to its hermetic DO-35 construction and stable Schottky junction. Radiation performance data for the 1N6675 must be derived from system-level testing - not specified in its base qualification. This applies equally to all variants in the 1N6675–1N6677 series.

What is the thermal resistance from junction to lead for the 1N6675?

The 1N6675 has a maximum junction-to-lead thermal resistance (RθJL) of 250 °C/W at L = 0.375 inch. This value is measured under standardized test conditions and is used to model worst-case junction temperature rise during continuous conduction. Accurate thermal design using the 1N6675 requires applying this RθJL alongside actual power dissipation and ambient thermal environment.

Can the 1N6675 replace a standard silicon rectifier in an existing design?

Yes, the 1N6675 can directly replace silicon rectifiers in low-voltage, low-current applications where its 20 V VRWM and 0.37 V VF at 20 mA provide measurable efficiency gains - especially in battery-powered or thermally limited systems. However, designers must verify reverse leakage compatibility and confirm that the 1N6675's lower PIV does not compromise transient margin. The 1N6675 is not a drop-in substitute for higher-voltage silicon diodes.