Nexperia USA Inc. 1PS10SB82,315

Overview

1PS10SB82 from Nexperia is a Schottky barrier diode in a DFN1006-2 (SOD882) leadless package, rated for 15 V reverse voltage, 30 mA forward current, and 700 mV forward voltage at 30 mA. It delivers low diode capacitance (1 pF at 0 V), low differential resistance (12 Ω at 5 mA), and operates up to 150 °C junction temperature. It is used in UHF mixers and sampling circuits where fast switching and minimal signal distortion are critical.

For engineers reviewing the 1PS10SB82 datasheet, 1PS10SB82 pinout, 1PS10SB82 application, or 1PS10SB82 equivalent, key selection criteria include its ultra-small 1.0 mm × 0.6 mm footprint, 1 pF capacitance at 1 MHz, 700 mV VF at 30 mA, cathode-marked top-side identification, and suitability for high-frequency RF signal routing in space-constrained mobile devices.

Technical Context

This epitaxial Schottky diode leverages a metal-semiconductor junction to achieve near-zero reverse recovery time and minimal stored charge-critical for RF mixing and phase detection. Its low 1 pF capacitance and 12 Ω differential resistance at 5 mA enable stable impedance matching across UHF bands without parasitic resonance.

The device is ESD-sensitive (HBM Class 1B per JESD22-A114) and requires handling precautions. Thermal resistance of 500 K/W (junction-to-ambient, FR4 PCB, single-sided copper) defines its power derating envelope under continuous DC or pulsed operation (δ ≤ 0.02, tp ≤ 300 µs).

Key Specifications

Pinout & Package

Package: DFN1006-2 (SOD882), leadless ultra-small plastic package measuring 1.0 mm × 0.6 mm × 0.48 mm with 0.65 mm pitch and 1.17 mm² board area.

Key Features

Applications

Availability

1PS10SB82 is available at Aetrix Electronics and suitable for UHF mixers, sampling circuits, and mobile device RF subsystems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for 1PS10SB82 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-performance, energy-efficient components for automotive, industrial, and consumer applications, with leadership in discrete and logic devices.

The 1PS10SB82 belongs to Nexperia's Schottky diode product line, engineered specifically for high-frequency signal conditioning in space-constrained wireless infrastructure and portable electronics.

FAQ

What is the maximum continuous forward current rating for the 1PS10SB82?

The 1PS10SB82 is rated for 30 mA continuous forward current under recommended operating conditions. This rating assumes ambient temperature ≤ 85 °C and proper PCB thermal relief; at 150 °C ambient, derating to ≤ 15 mA is required per thermal resistance data (500 K/W) and junction temperature limit (150 °C).

How is cathode identification implemented on the 1PS10SB82 package?

The cathode is identified by a visible marking bar on the top surface of the DFN1006-2 package. Pin 1 (cathode) is located at the end of the package with this bar, as confirmed in the official Nexperia pinning diagram and package outline drawing (Figure 5). No silkscreen or solder mask marker is required due to this physical feature.

Does the 1PS10SB82 meet automotive qualification standards?

Yes-the 1PS10SB82 is qualified to AEC-Q101 for automotive applications. Its 150 °C maximum junction temperature, robust ESD tolerance (HBM Class 1B), and stable parametric performance across -55 °C to +150 °C ambient make it suitable for infotainment RF modules and telematics antenna switching, though not for safety-critical systems without additional system-level validation.

Can the 1PS10SB82 replace the 1PS79SB82 in an existing design?

No-the 1PS79SB82 has a higher 30 V reverse voltage rating and different VF/Cd trade-offs (VF = 800 mV typ, Cd = 0.8 pF). Substituting the 1PS10SB82 (15 V VR) risks reverse breakdown in 24 V bias networks. Electrical revalidation-including leakage, capacitance, and thermal margin-is mandatory before any interchange.