NXP Semiconductors 1PS193,135

Overview

1PS193 from Nexperia is a high-speed switching diode in SC59 SMD package, with 4 ns reverse recovery time, 85 V repetitive peak reverse voltage, and 500 mA repetitive peak forward current. It serves as a fast signal path switch in surface-mounted logic and timing circuits.

For engineers reviewing the 1PS193 datasheet, 1PS193 pinout, 1PS193 application, or 1PS193 equivalent, key selection criteria include reverse recovery time, junction-to-ambient thermal resistance (500 K/W), low diode capacitance (1.5 pF at 0 V), and n.c. terminal isolation in compact SC59 layout.

Technical Context

The 1PS193 employs planar silicon technology to achieve sub-4 ns trr with controlled minority-carrier lifetime. Its anode–cathode–n.c. pinning enables unidirectional signal routing while minimizing parasitic coupling in high-frequency paths.

Thermal performance is defined for FR4 PCB mounting: Rth j-a = 500 K/W and Rth j-tp = 250 K/W. Electrical behavior is specified at Tj = 25 °C, with IR ≤ 0.5 μA at VR = 80 V and VF ≤ 1.2 V at IF = 100 mA.

Key Specifications

Pinout & Package

Package: SC59 - 3-pin small-outline plastic SMD package (3.1 × 1.7 × 1.3 mm), marked F3T, optimized for automated placement and reflow.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed diode applications.

Compared with BAT54S,215 and 1N4148W,115, the 1PS193 uniquely combines 85 V VRRM, 4 ns trr, SC59 size, and a dedicated n.c. pin-making it optimal for space-constrained, high-frequency, single-diode applications where terminal isolation reduces crosstalk.

Availability

1PS193 is available at Aetrix Electronics and suitable for logic-level clamping, RF signal detection, and PWM snubber applications requiring stable component supply across automotive infotainment, industrial PLC I/O modules, and portable medical sensor designs.

Supply support for 1PS193 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.

The 1PS193 belongs to Nexperia's high-speed diode product line, engineered specifically for signal integrity-critical roles in surface-mounted digital and RF circuits where speed, low capacitance, and layout flexibility are essential.

FAQ

What is the maximum reverse recovery time (trr) specification for the 1PS193?

The 1PS193 has a maximum reverse recovery time of 4 ns under test conditions of IF = 10 mA switched to IR = 10 mA, RL = 100 Ω, measured at IR = 1 mA. This value is guaranteed across the full operating temperature range and is critical for maintaining signal fidelity in high-frequency switching applications. The 1PS193 achieves this performance via optimized planar silicon processing and precise carrier lifetime control.

Does the 1PS193 have a pin that is not internally connected, and how should it be handled on the PCB?

Yes, Pin 2 of the 1PS193 is explicitly designated "not connected" in the official Nexperia datasheet. It must remain electrically floating-no trace, pad, or solder mask opening should connect to it. This isolation reduces parasitic coupling in high-density layouts. The 1PS193's SC59 package marking code F3T confirms this pinning configuration, and violating the n.c. requirement may degrade high-speed performance.

What is the thermal resistance from junction to ambient (Rth j-a) for the 1PS193, and under what conditions is it specified?

The 1PS193 has a junction-to-ambient thermal resistance of 500 K/W, specified with the device mounted on a standard FR4 printed-circuit board per Nexperia's test methodology. This value assumes natural convection cooling and no added copper pour or thermal vias. Designers should use this figure to calculate maximum allowable power dissipation at target ambient temperatures-e.g., at 75 °C ambient, Ptot must stay below ~150 mW to maintain Tj ≤ 150 °C.

Can the 1PS193 be used in RF detector applications, and what electrical parameters support that use case?

Yes, the 1PS193 is suitable for RF detector applications due to its low diode capacitance (1.5 pF max at 0 V, 1 MHz), low reverse current (30 nA at VR = 25 V, 25 °C), and fast switching (4 ns trr). These parameters enable efficient envelope detection up to 10 MHz with minimal signal loss or distortion. The 1PS193's planar construction and SC59 package also minimize parasitic inductance, further supporting RF performance in compact sensor front-ends.

What are the absolute maximum ratings for continuous reverse voltage (VR) and repetitive peak reverse voltage (VRRM) for the 1PS193?

The 1PS193 has a maximum continuous reverse voltage (VR) of 80 V and a maximum repetitive peak reverse voltage (VRRM) of 85 V, both defined per IEC 60134 Absolute Maximum Rating System. These values reflect steady-state and transient reverse-bias limits respectively. Exceeding either rating-even briefly-may cause irreversible junction breakdown. Designers must ensure system-level voltage transients remain within the 85 V VRRM limit, especially in inductive load switching environments where the 1PS193 is commonly deployed.