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NXP Semiconductors 1PS301,115

Part No.:
1PS301,115
Manufacturer:
NXP Semiconductors
Category:
Diode Arrays
Package:
-
Datasheet:
Aetrix1PS301,115.pdf
Description:
DIODE ARRAY 80V 160MA SOT323
Quantity:
Payment:
Payment
Shipping:
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Inventory:258,000

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Product details

Overview

1PS301,115 from Nexperia is a dual high-speed switching diode in SOT323 (SC-70) package, featuring trr ≤ 4 ns, Cd ≤ 1.5 pF, and VRRM ≤ 85 V. It integrates two anodes sharing a common cathode for compact signal routing in space-constrained high-frequency circuits such as USB 2.0 data line protection and RF front-end switching.

For engineers reviewing the 1PS301,115 datasheet, 1PS301,115 pinout, 1PS301,115 application, or 1PS301,115 equivalent, key selection criteria include reverse recovery time under 4 ns, low junction capacitance at 1.5 pF, AEC-Q101 qualification for automotive use, and dual-diode topology with shared cathode configuration.

Technical Context

The 1PS301,115 implements a monolithic dual-diode structure with isolated P-N junctions sharing a single cathode terminal (Pin 3), enabling independent forward conduction paths from Pin 1 and Pin 2 while minimizing parasitic inductance in high-speed switching nodes. Its design targets fast transient response in bidirectional signal clamping and polarity-selective routing.

Thermal resistance Rth(j-a) of 415 K/W and Rth(j-sp) of 200 K/W reflect optimized thermal path design for FR4 PCB mounting, supporting continuous operation up to 150 °C junction temperature. The device operates within ambient temperatures from −55 °C to +150 °C, validated per IEC 60134 absolute maximum rating system.

Key Specifications

Parameter Value and Actual Design Meaning
trr ≤ 4 ns - Enables sub-10 ns switching transitions in 50 MHz+ digital signal paths.
Cd ≤ 1.5 pF at 1 MHz, VR = 0 V - Minimizes signal loading on high-impedance RF or high-speed data lines.
VRRM 85 V - Supports transient suppression in 24 V automotive power domains and industrial control I/O.
IFRM 500 mA peak - Handles surge currents during hot-swap or ESD event recovery without degradation.
VF @ 10 mA 740 mV typical - Ensures low forward drop for minimal voltage loss in bias and level-shifting circuits.
IR @ 80 V 0.5 µA max - Guarantees leakage below 1 µA in battery-backed or ultra-low-power standby modes.
Ptot 300 mW at Tamb ≤ 25 °C - Defines thermal derating envelope for sustained operation on standard FR4 PCBs.

Pinout & Package

SOT323 (SC-70) plastic surface-mounted package with 3 leads; dimensions: 2.2 mm × 1.35 mm × 0.95 mm (L × W × H), 0.65 mm lead pitch, tin-plated terminations compatible with standard reflow profiles.

Pin/Terminal Circuit Role Design Meaning
1 Anode (Diode 1) Forward current entry point for first diode; used for unidirectional signal steering or clamping.
2 Anode (Diode 2) Independent forward current entry for second diode; enables dual-path routing or redundancy.
3 Common Cathode Shared return path for both diodes; reduces PCB trace count and improves layout symmetry.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive-grade reliability including temperature cycling, humidity bias, and mechanical shock testing.
trr ≤ 4 ns Enables clean edge integrity in 100 Mbps+ serial interfaces without overshoot or ringing artifacts.
Cd ≤ 1.5 pF Preserves signal rise/fall times in >1 GHz small-signal applications like antenna switch control.
Common-cathode dual-diode topology Reduces component count and board area by 33% versus discrete diode pairs in bidirectional protection schemes.
IFRM = 500 mA Supports short-duration current surges during ESD events per IEC 61000-4-2 Level 4 (8 kV contact).

Applications

USB 2.0 Data Line Protection Automotive CAN Bus Transceiver Clamping

Use Scenario: Bidirectional ESD protection on D+ and D− lines of USB 2.0 host/device ports.

IC Role / Device Role / Timing Role: Dual-diode clamping network with common cathode tied to VBUS or ground reference.

Use Value: 4 ns trr ensures no data corruption during 480 Mbps packet transmission; 1.5 pF capacitance avoids signal integrity degradation.

Use Scenario: Transient voltage suppression on CAN_H and CAN_L lines in automotive body control modules.

IC Role / Device Role / Timing Role: High-speed clamp diode pair referenced to common ground, absorbing ISO 7637-2 pulse 1/2/5a transients.

Use Value: AEC-Q101 qualification guarantees operation across −40 °C to +125 °C ambient; 85 V VRRM covers load-dump overvoltage margins.

RF Antenna Switch Control Industrial Sensor Signal Conditioning

Use Scenario: DC blocking and RF path selection in LTE/5G front-end modules using PIN diode replacement.

IC Role / Device Role / Timing Role: Fast-switching diode pair controlling RF signal routing between antenna and transceiver paths.

Use Value: Sub-4 ns recovery time prevents RF carrier leakage during state transitions; low 1.5 pF capacitance maintains impedance match at 2.6 GHz.

Use Scenario: Input protection and polarity correction for analog sensor outputs (e.g., thermocouple, RTD) interfacing with precision ADCs.

IC Role / Device Role / Timing Role: Low-leakage (0.5 µA max) dual clamp limiting input voltage excursions beyond supply rails.

Use Value: 740 mV VF at 10 mA ensures minimal offset error in millivolt-level sensor signals; 150 °C Tj rating supports operation near hot industrial enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual high-speed switching diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
BAT54C,215 trr = 5 ns (typ), Cd = 10 pF (typ), VRRM = 30 V, non-AEC-Q101 Limited to 30 V systems; higher capacitance degrades >100 MHz performance Select when cost sensitivity outweighs speed/capacitance requirements in non-automotive consumer designs.
NSR0230HT1G trr = 3 ns (typ), Cd = 1.2 pF (typ), VRRM = 30 V, AEC-Q101 qualified Lower VRRM restricts use to 3.3 V/5 V logic domains; lacks dual-anode topology Prefer for ultra-high-speed <1 ns edge applications where single-diode isolation is acceptable and voltage range permits.

Compared with BAT54C,215 and NSR0230HT1G, the 1PS301,115 uniquely balances 85 V VRRM, 4 ns trr, 1.5 pF Cd, and AEC-Q101 compliance in a dual-anode/common-cathode SOT323 package-making it the only option meeting all four criteria simultaneously for automotive and industrial high-voltage, high-speed switching.

Availability

1PS301,115 is available at Aetrix Electronics and suitable for USB 2.0 interface protection, automotive CAN bus clamping, and RF antenna switching requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 1PS301,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET devices with focus on efficiency, miniaturization, and automotive-grade quality.

The 1PS301,115 belongs to Nexperia's high-speed switching diode product line, engineered specifically for ESD protection, signal routing, and transient suppression in automotive, industrial, and high-data-rate communication systems.

FAQ

What is the maximum junction temperature for continuous operation of the 1PS301,115?

The 1PS301,115 has a maximum junction temperature (Tj) rating of 150 °C, verified per IEC 60134 limiting values. This allows uninterrupted operation in under-hood automotive environments and industrial enclosures where ambient temperatures reach +125 °C, provided thermal resistance to ambient (Rth(j-a) = 415 K/W) and power dissipation remain within derated limits.

Is the 1PS301,115 suitable for bidirectional signal clamping applications?

Yes-the 1PS301,115 supports bidirectional clamping via its dual-anode/common-cathode configuration: connecting Pin 1 to positive rail and Pin 2 to negative rail (or vice versa) enables symmetrical voltage limiting across differential signal pairs such as USB D+/D− or CAN_H/CAN_L, with matched trr and Cd characteristics ensuring balanced transient response.

How does the 1PS301,115 differ from standard Schottky diodes in high-speed switching roles?

Unlike Schottky diodes, the 1PS301,115 uses silicon P-N junction technology to achieve lower reverse leakage (0.5 µA at 80 V vs. typical Schottky µA–mA range) and higher VRRM (85 V vs. typically ≤40 V), while maintaining competitive trr (≤4 ns) and Cd (≤1.5 pF). This makes it preferable where low IR and high reverse voltage tolerance are critical, such as in 24 V industrial I/O protection.

Can the 1PS301,115 be used in place of two separate SOT23 diodes?

Yes-its SOT323 footprint occupies ~40% less board area than two discrete SOT23 diodes, and the shared cathode eliminates one PCB trace. However, substitution requires verifying that circuit topology accommodates the common-cathode constraint (e.g., both anodes must connect to different signal sources feeding the same return node), unlike independent dual-diode configurations.

1PS301,115 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Diode Configuration:
-
Technology:
-
Voltage - DC Reverse (Vr) (Max):
-
Current - Average Rectified (Io) (per Diode):
-
Voltage - Forward (Vf) (Max) @ If:
-
Speed:
-
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
-
Operating Temperature - Junction:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

1PS301,115 FAQ

1.How can I place an order for 1PS301,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for 1PS301,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1PS301,115 reliable?

The price and inventory of 1PS301,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1PS301,115 is usually 5 days.

3.What payment methods are accepted for 1PS301,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1PS301,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1PS301,115?

1PS301,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1PS301,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1PS301,115?

For technical support, including 1PS301,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1PS301,115 requirements.

6.How does Aetrix verify that 1PS301,115 is sourced from the original manufacturer or authorized distributors?

All 1PS301,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1PS301,115 meets industry standards.

7.What is the process for return or replacement of 1PS301,115?

All 1PS301,115 units undergo pre-shipment inspection (PSI). If there is an issue with 1PS301,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1PS301,115 part is unused and in its original packaging.

Return procedure for 1PS301,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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