NXP Semiconductors 1PS70SB45,115
- Part No.:
- 1PS70SB45,115
- Manufacturer:
- NXP Semiconductors
- Category:
- Diode Arrays
- Package:
- -
- Datasheet:
-
1PS70SB45,115.pdf
- Description:
- DIODE SCHOTTKY 40V 120MA SOT323
- Quantity:
- Payment:

- Shipping:

Inventory:366,000
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Product details
Overview
1PS70SB45 from Nexperia is a general-purpose dual Schottky diode in SOT323 (SC-70) package, configured as two anodes sharing a common cathode. It delivers 40 V reverse voltage rating, 120 mA forward current capability, and 380 mV forward voltage at 1 mA, enabling ultra-high-speed switching and voltage clamping in space-constrained automotive and industrial signal paths.
For engineers reviewing the 1PS70SB45 datasheet, 1PS70SB45 pinout, 1PS70SB45 application, or 1PS70SB45 equivalent, key selection criteria include its AEC-Q101 qualification, low 5 pF capacitance at 0 V, 1 µA reverse leakage at 30 V, and thermal resistance of 625 K/W on FR4 PCB - all critical for high-frequency transient suppression and rail-to-rail clamping in automotive ECUs and sensor interfaces.
Technical Context
This dual Schottky diode integrates two independent anode terminals (A1, A2) with a shared cathode (K1/K2), supporting independent clamping or steering functions in bidirectional signal conditioning. Its low forward voltage and sub-5 pF junction capacitance minimize propagation delay and signal distortion in <100 MHz digital I/O protection circuits.
The device operates across −65 °C to +150 °C ambient and junction temperatures, with AEC-Q101 qualification confirming robustness against automotive thermal cycling, humidity, and mechanical stress. Repetitive peak forward current reaches 120 mA, and non-repetitive surge withstands 200 mA for 10 ms - suitable for ESD-transient absorption without derating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 40 V - supports clamping up to 36 V automotive rails with 10% margin |
| Forward Voltage (VF) | 380 mV @ 1 mA - enables low-loss biasing and logic-level signal steering |
| Reverse Leakage (IR) | 1 µA @ 30 V - ensures minimal standby power loss in battery-backed circuits |
| Junction Capacitance (Cd) | 5 pF @ 0 V, 1 MHz - preserves signal integrity in USB 2.0 and CAN FD data lines |
| Thermal Resistance (Rth(j-a)) | 625 K/W - defines power dissipation limit of ~160 mW on standard FR4 PCB |
| Peak Forward Current (IFSM) | 200 mA @ 10 ms - handles ESD-induced transients per IEC 61000-4-2 Level 4 |
| AEC-Q101 Qualified | Yes - validated for automotive under-hood and infotainment applications |
Pinout & Package
Package: SC-70 (SOT323), 3-lead surface-mount plastic package measuring 2.0 mm × 1.25 mm × 0.95 mm with 1.3 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode (Diode 1) | Input node for first Schottky path; connects to protected signal line or supply rail |
| 2 | Anode (Diode 2) | Independent input node for second Schottky path; enables dual-rail or differential clamping |
| 3 | Common Cathode (K1/K2) | Shared output node tied to reference (e.g., VCC or GND); determines clamping polarity |
Key Features
| Feature | Design Value |
|---|---|
| High switching speed | Enabled by low junction capacitance (5 pF) and fast carrier injection - tRR < 10 ns typical |
| Low leakage current | 1 µA max at 30 V reverse bias - reduces quiescent current in always-on sensor interfaces |
| High breakdown voltage | 40 V VR rating - accommodates 24 V automotive systems with safety margin |
| Low forward voltage | 380 mV @ 1 mA - minimizes voltage drop in precision reference clamping networks |
| AEC-Q101 qualification | Validated per stress test requirements for discrete semiconductors - approved for automotive production |
Applications
| Automotive CAN Transceiver Protection | USB 2.0 Data Line Clamping |
|---|---|
Use Scenario: Protecting CAN_H/CAN_L pins in automotive body control modules from ISO 7637-2 load dump and ESD events. IC Role / Device Role / Timing Role: Dual-anode clamping diode referenced to VCC and GND, absorbing positive/negative transients before they reach the transceiver IC. Use Value: Prevents latch-up and damage using 40 V VR rating and 200 mA IFSM surge capacity - compliant with OEM EMC specifications. | Use Scenario: Bidirectional ESD protection on D+ and D− lines of USB 2.0 host ports in infotainment head units. IC Role / Device Role / Timing Role: Low-capacitance (5 pF) dual Schottky clamp limiting voltage excursions to ±0.7 V during ±8 kV HBM ESD events. Use Value: Maintains signal rise/fall times < 1 ns while meeting IEC 61000-4-2 Level 4 without degrading eye diagram integrity. |
| Industrial Sensor Signal Conditioning | Low-Power Microcontroller I/O Protection |
Use Scenario: Clamping analog sensor outputs (e.g., thermistor bridges) against overvoltage during hot-plug or cable fault conditions. IC Role / Device Role / Timing Role: Dual-path Schottky clamp referenced to AVDD and AGND, limiting excursion to within 380 mV of rails. Use Value: Preserves 16-bit ADC accuracy by preventing input stage saturation - leakage <1 µA avoids offset drift in µA-level bias networks. | Use Scenario: Protecting GPIO pins of automotive-grade microcontrollers (e.g., S32K144) from accidental 12 V contact or relay coil kickback. IC Role / Device Role / Timing Role: Common-cathode dual diode routing overvoltage to VDD and undervoltage to GND, leveraging MCU's internal weak pull-ups/pull-downs. Use Value: Eliminates need for external TVS arrays; 120 mA IF rating supports sustained fault current without thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| RB521S-40T1G | Single diode, 40 V VR, 200 mA IF, SOD-523 package - no dual-anode topology | Requires two devices for dual-path clamping; higher board area and assembly cost | Use only when dual-anode integration is unnecessary and footprint allows discrete placement |
| NSR20F40NXT5G | Dual Schottky, 40 V VR, 200 mA IF, but VF = 450 mV @ 1 mA - 70 mV higher than 1PS70SB45 | Slightly higher conduction loss in low-current bias networks; same AEC-Q101 grade | Select when higher surge rating is prioritized over minimal forward drop in precision clamping |
Compared with RB521S-40T1G and NSR20F40NXT5G, the 1PS70SB45 uniquely combines dual-anode integration, lowest VF (380 mV), and industry-standard SOT323 footprint - making it optimal for space- and efficiency-critical automotive signal protection where single-device layout and millivolt-level voltage control matter.
Availability
1PS70SB45 is available at Aetrix Electronics and suitable for automotive CAN transceivers, USB 2.0 interface protection, and industrial sensor signal conditioning requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 1PS70SB45 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete and logic devices for automotive, industrial, and consumer markets.
The 1PS70SB45 belongs to Nexperia's AEC-Q101-qualified Schottky diode portfolio, engineered specifically for high-speed signal integrity and transient protection in harsh automotive environments - not general-purpose replacement diodes.
FAQ
What is the maximum continuous forward current rating for the 1PS70SB45?
The 1PS70SB45 has a maximum continuous forward current (IF) of 120 mA at Tamb = 25 °C. Derating is required above 25 °C ambient, following the thermal resistance Rth(j-a) = 625 K/W - for example, at 85 °C ambient, maximum IF drops to approximately 80 mA to maintain Tj ≤ 150 °C.
Can the 1PS70SB45 be used for bidirectional ESD protection on a single signal line?
No - the 1PS70SB45 has two anodes and one common cathode, so it provides unidirectional clamping from signal to VCC (via A1) and signal to GND (via A2) only when cathode is split or externally biased. For true bidirectional protection on one line, a dedicated dual-rail TVS like PESD5V0S1BA is required.
Is the 1PS70SB45 compatible with lead-free reflow soldering processes?
Yes - the 1PS70SB45 is qualified for lead-free reflow per JEDEC J-STD-020. Its SOT323 package supports peak reflow temperatures up to 260 °C for 30 seconds. The recommended footprint uses 0.55 mm × 0.6 mm solder pads with 1.325 mm center-to-center spacing, matching standard SC-70 land patterns.
How does the 1PS70SB45 differ from the 1PS70SB40 variant?
The 1PS70SB45 has a 40 V reverse voltage rating and 380 mV forward voltage at 1 mA, while the 1PS70SB40 is rated for 40 V VR but specifies VF = 450 mV at the same condition. Both share identical SOT323 packaging, pinout, and AEC-Q101 qualification - the key distinction is lower conduction loss in the SB45 variant for precision clamping applications.
1PS70SB45,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Diode Configuration:
- -
- Technology:
- -
- Voltage - DC Reverse (Vr) (Max):
- -
- Current - Average Rectified (Io) (per Diode):
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Speed:
- -
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- -
- Operating Temperature - Junction:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
1PS70SB45,115 FAQ
1.How can I place an order for 1PS70SB45,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1PS70SB45,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1PS70SB45,115 reliable?
The price and inventory of 1PS70SB45,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1PS70SB45,115 is usually 5 days.
3.What payment methods are accepted for 1PS70SB45,115?
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4.How is shipping managed for 1PS70SB45,115?
1PS70SB45,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1PS70SB45,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1PS70SB45,115?
For technical support, including 1PS70SB45,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1PS70SB45,115 requirements.
6.How does Aetrix verify that 1PS70SB45,115 is sourced from the original manufacturer or authorized distributors?
All 1PS70SB45,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1PS70SB45,115 meets industry standards.
7.What is the process for return or replacement of 1PS70SB45,115?
All 1PS70SB45,115 units undergo pre-shipment inspection (PSI). If there is an issue with 1PS70SB45,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1PS70SB45,115 part is unused and in its original packaging.
Return procedure for 1PS70SB45,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1PS70SB45,115 Tags

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BAV99-7-F
Diodes Incorporated

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BAT54C-7-F
Diodes Incorporated

-
BAV99,215
Nexperia USA Inc.

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BAT54SLT1G
onsemi

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BAV70LT1G
onsemi

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BAT54CLT1G
onsemi

-
BAT54S-7-F
Diodes Incorporated

-
BAV99LT1G
onsemi

-
BAT54S,215
Nexperia USA Inc.

-
BAS40-04LT1G
onsemi

-
MMBD1503-TP
Micro Commercial Co

-
BAV99WT1G
onsemi
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