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NXP Semiconductors 1PS70SB46,115
- Part No.:
- 1PS70SB46,115
- Manufacturer:
- NXP Semiconductors
- Category:
- Diode Arrays
- Package:
- -
- Datasheet:
-
1PS70SB46,115.pdf
- Description:
- DIODE SCHOTTKY 40V 120MA SOT323
- Quantity:
- Payment:
- Shipping:
Inventory:418,030
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Product details
Overview
1PS70SB46 from Nexperia is a general-purpose dual Schottky diode in SOT323 (SC-70) package, featuring common-anode configuration, 40 V reverse voltage rating, 120 mA forward current capability, and 380 mV typical forward voltage at 1 mA - used for ultra high-speed switching and voltage clamping in automotive signal conditioning circuits.
For engineers reviewing the 1PS70SB46 datasheet, 1PS70SB46 pinout, 1PS70SB46 application, or 1PS70SB46 equivalent, key selection criteria include AEC-Q101 qualification, low 5 pF capacitance at 0 V, sub-1 µA reverse leakage at 30 V, and thermal resistance of 625 K/W on FR4 PCB - critical for space-constrained automotive sensor interfaces and ESD-protected I/O stages.
Technical Context
This dual Schottky diode integrates two independent junctions sharing a common anode terminal, enabling compact bidirectional clamping or parallel current handling without cross-coupling. Its silicon epitaxial construction delivers fast recovery (ns-scale) and low forward conduction loss across -40 °C to +125 °C ambient range.
The device operates with zero minority-carrier storage, eliminating reverse recovery charge - essential for high-frequency (>10 MHz) transient suppression and rail-to-rail signal limiting. Thermal performance is defined for single-sided copper FR4 mounting, with junction temperature limited to 150 °C under pulsed or continuous DC conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 40 V - maximum blocking capability before breakdown; suitable for 3.3 V/5 V/12 V rail clamping |
| Forward Current (IF) | 120 mA continuous - supports sustained signal-level current in sensor biasing and logic interface protection |
| Forward Voltage (VF) | 380 mV @ 1 mA - enables low-loss clamping near logic thresholds without loading source drivers |
| Reverse Leakage (IR) | 1 µA @ 30 V - ensures minimal standby power impact in battery-backed automotive modules |
| Capacitance (Cd) | 5 pF @ 0 V, 1 MHz - preserves signal integrity up to ~300 MHz in high-speed data lines |
| Junction Temp (Tj) | 150 °C max - validated for under-hood automotive environments per AEC-Q101 stress testing |
| Thermal Resistance (Rth(j-a)) | 625 K/W - defines power derating on standard FR4; 120 mA @ 25 °C yields ~15 °C rise |
Pinout & Package
SOT323 (SC-70) plastic surface-mount package: 3-pin, 1.3 mm pitch, 2.0 mm × 1.25 mm × 0.95 mm body height, optimized for reflow soldering on fine-pitch PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (K1) | Cathode of Diode 1 | Provides dedicated cathode path for first Schottky junction; routed separately for asymmetric clamping |
| 2 (K2) | Cathode of Diode 2 | Independent cathode node enables dual-rail or differential clamping configurations |
| 3 (A1/A2) | Common Anode | Shared anode connection simplifies PCB layout for bidirectional TVS-like behavior with single supply tie |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive use including temperature cycling, HTRB, and ESD testing per JESD22 standards |
| Low forward voltage | 380 mV typ. at 1 mA enables clamping below logic-high thresholds without false triggering |
| High switching speed | No reverse recovery charge - supports >100 MHz transient suppression in CAN/LIN bus stubs |
| Low capacitance | 5 pF at 0 V minimizes signal distortion on USB 2.0, I²C, and SPI lines |
| Small footprint | SOT323 package saves >60% board area vs. SO-8 dual diodes while maintaining thermal reliability |
Applications
| Automotive Sensor Interface | Industrial I²C Bus Protection |
|---|---|
Use Scenario: Clamping ESD transients on analog outputs of ABS wheel speed sensors operating at 125 °C under hood. IC Role / Device Role / Timing Role: Dual-cathode Schottky clamp referenced to battery rail, absorbing ±8 kV contact discharge per ISO 10605. Use Value: Prevents op-amp input damage without adding RC delay; 5 pF capacitance avoids signal edge degradation at 10 kHz sensor output rate. |
Use Scenario: Protecting 3.3 V I²C SDA/SCL lines in programmable logic controllers exposed to factory EMI. IC Role / Device Role / Timing Role: Common-anode dual diode tied to VCC and GND, providing bidirectional rail-to-rail clamping. Use Value: Maintains I²C timing compliance (400 kHz) with <1 ns added propagation skew; 380 mV VF avoids false low-state detection. |
| USB 2.0 Data Line Clamp | Low-Power Microcontroller GPIO Protection |
Use Scenario: ESD protection on D+/D− lines of automotive infotainment USB ports subjected to hot-plug events. IC Role / Device Role / Timing Role: Two independent Schottky paths (K1→VCC, K2→GND) with shared anode grounded via 100 Ω series resistor. Use Value: 120 mA IF rating handles IEC 61000-4-2 surge currents; 5 pF Cd prevents eye diagram closure at 480 Mbps. |
Use Scenario: Input protection for 1.8 V GPIO pins on automotive body control modules with intermittent 12 V exposure. IC Role / Device Role / Timing Role: Cathode-to-VCC and cathode-to-GND clamping diodes sharing MCU VDD as common anode reference. Use Value: 40 V VR withstands load-dump spikes; 1 µA IR at 30 V prevents battery drain in sleep mode (<10 nA total leakage). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSR20F40NXT5G | Higher IF (200 mA), higher VF (450 mV @ 1 mA), same SOT-323 package | Better suited for higher-current clamping but increases logic-low margin by 70 mV | Select when peak surge current exceeds 120 mA and VF tolerance >450 mV is acceptable |
| Diodes Inc. BAV99W-7-F | Lower VR (70 V), higher IR (5 µA @ 30 V), same pinout, AEC-Q101 qualified | Higher leakage may affect battery-life-critical low-power sleep states | Prefer where higher reverse margin is needed and leakage <1 µA is not mandatory |
Compared with 1PS70SB46, NSR20F40NXT5G trades lower forward voltage for higher current capacity, while BAV99W-7-F offers greater reverse voltage headroom at the cost of increased leakage - making 1PS70SB46 optimal for balanced low-leakage, low-VF, AEC-Q101-compliant designs.
Availability
1PS70SB46 is available at Aetrix Electronics and suitable for automotive sensor interfaces, industrial I²C bus protection, USB 2.0 data line clamping, and low-power microcontroller GPIO protection requiring stable component supply across extended temperature ranges and AEC-Q101 compliance.
Supply support for 1PS70SB46 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and advanced packaging technologies.
The 1PS70SB46 belongs to Nexperia's general-purpose Schottky diode product line, engineered specifically for AEC-Q101-compliant signal integrity and ESD protection in space-constrained automotive and industrial control systems.
FAQ
Is 1PS70SB46 suitable for bidirectional ESD protection on a 3.3 V I²C bus?
Yes - its common-anode configuration allows direct connection between SDA/SCL and VCC/GND rails, clamping both positive and negative transients. With 5 pF capacitance and 380 mV forward voltage, it maintains I²C timing integrity at 400 kHz while meeting IEC 61000-4-2 Level 4 (±8 kV contact) requirements when combined with appropriate series impedance.
What is the maximum continuous power dissipation for 1PS70SB46 on a standard FR4 PCB?
Based on Rth(j-a) = 625 K/W and Tj(max) = 150 °C at Tamb = 25 °C, the maximum continuous power is (150 − 25) / 625 = 200 mW. At 120 mA forward current, this corresponds to a maximum sustainable VF of 1.67 V - well above its 1 V max at 40 mA, confirming safe DC operation within rated IF.
Can 1PS70SB46 replace BAS40 in existing designs?
No - BAS40 is a single Schottky diode in SOT23; 1PS70SB46 is a dual-diode common-anode device in smaller SOT323. Pin compatibility is absent (BAS40: anode-cathode-anode; 1PS70SB46: cathode-cathode-anode), and circuit function differs fundamentally. Redesign is required to leverage its dual-clamp topology.
Does the 1 µA reverse leakage specification apply at elevated temperatures?
No - the 1 µA value is specified at VR = 30 V and Tamb = 25 °C. At 125 °C, typical IR rises to ~10 µA (per Fig. 2), and at 150 °C junction temperature, it may reach 50 µA. For battery-powered sleep-mode applications, design margins must account for this exponential increase using the published IR vs. VR/Tamb curves.
1PS70SB46,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Diode Configuration:
- -
- Technology:
- -
- Voltage - DC Reverse (Vr) (Max):
- -
- Current - Average Rectified (Io) (per Diode):
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Speed:
- -
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- -
- Operating Temperature - Junction:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
1PS70SB46,115 FAQ
1.How can I place an order for 1PS70SB46,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1PS70SB46,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1PS70SB46,115 reliable?
The price and inventory of 1PS70SB46,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1PS70SB46,115 is usually 5 days.
3.What payment methods are accepted for 1PS70SB46,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1PS70SB46,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1PS70SB46,115?
1PS70SB46,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1PS70SB46,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1PS70SB46,115?
For technical support, including 1PS70SB46,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1PS70SB46,115 requirements.
6.How does Aetrix verify that 1PS70SB46,115 is sourced from the original manufacturer or authorized distributors?
All 1PS70SB46,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1PS70SB46,115 meets industry standards.
7.What is the process for return or replacement of 1PS70SB46,115?
All 1PS70SB46,115 units undergo pre-shipment inspection (PSI). If there is an issue with 1PS70SB46,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1PS70SB46,115 part is unused and in its original packaging.
Return procedure for 1PS70SB46,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1PS70SB46,115 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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