Nexperia USA Inc. 1PS76SB10-QF

Overview

1PS76SB10-QF from Nexperia is a planar Schottky barrier single diode with integrated guard ring for stress protection, housed in an SOD323 surface-mount package. It delivers 400 mV forward voltage at 10 mA, 30 V reverse voltage rating, and 10 pF capacitance at 1 V/1 MHz - optimized for ultra-high-speed switching and reverse polarity protection in automotive power rails.

For engineers reviewing the 1PS76SB10-QF datasheet, 1PS76SB10-QF pinout, 1PS76SB10-QF application, or 1PS76SB10-QF equivalent, key selection criteria include its AEC-Q101 qualification, low VF across 0.1–100 mA operating range, thermal resistance of 450 K/W, and SOD323 footprint compatibility with high-density PCB layouts.

Technical Context

This Schottky diode employs a planar silicon structure with an integrated guard ring to enhance robustness against electrical overstress and transient voltage spikes. Its low-junction-capacitance design (10 pF @ 1 V) and sub-400 mV forward drop at 10 mA support fast edge-rate signal integrity in termination and clamping circuits.

The device operates within −55 °C to +125 °C ambient range and supports pulsed forward currents up to 600 mA (non-repetitive), with junction temperature limited to 125 °C. Thermal performance is characterized on FR4 PCB with single-sided copper, yielding R_th(j-a) = 450 K/W.

Key Specifications

Pinout & Package

Encapsulated in the SOD323 plastic surface-mount package (1.7 mm × 1.25 mm × 0.95 mm body, 1.3 mm lead pitch), this diode uses a two-terminal configuration with cathode marked by a bar on the package top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with NSR0230HT1G and VS-1EQH03-M3/84A, the 1PS76SB10-QF offers the lowest capacitance (10 pF) and tightest V_F consistency across temperature - making it optimal for space-constrained, high-frequency automotive signal integrity roles where layout parasitics must be minimized.

Availability

1PS76SB10-QF is available at Aetrix Electronics and suitable for automotive power rail protection, high-speed signal termination, and voltage clamping applications requiring stable component supply, AEC-Q101 compliance, and SOD323 footprint consistency.

Supply support for 1PS76SB10-QF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and advanced packaging technologies.

The 1PS76SB10-QF belongs to Nexperia's AEC-Q101-qualified Schottky diode portfolio, engineered specifically for automotive subsystems demanding low-loss, fast-switching, and robust transient protection in compact form factors.

FAQ

Is the 1PS76SB10-QF suitable for continuous 200 mA DC operation?

No - the 200 mA rating is the absolute maximum steady-state forward current. Continuous operation at that level exceeds thermal limits given R_th(j-a) = 450 K/W and T_j(max) = 125 °C. At 25 °C ambient, sustained I_F should be limited to ≤150 mA to maintain safe junction temperature. Derating is required above 25 °C ambient.

What does the "S0" marking on the device indicate?

The "S0" laser marking on the top surface of the SOD323 package is the manufacturer-specific code for the 1PS76SB10-QF type number, per Table 4 of the datasheet. The bar adjacent to pin 1 denotes the cathode terminal, confirming polarity orientation during placement.

How does the integrated guard ring improve reliability in automotive environments?

The guard ring mitigates edge breakdown under high electric field stress, significantly improving resistance to ESD (≥8 kV HBM) and repetitive transients (e.g., ISO 7637-2 Pulse 1/2a). This prevents parametric drift and premature failure during load dump or jump-start events common in 12 V vehicle systems.

Can the 1PS76SB10-QF replace a standard silicon diode in reverse polarity protection?

Yes - its 30 V V_R and 400 mV V_F enable direct substitution for 1N4148 or 1N400x in low-voltage, high-efficiency reverse polarity circuits. However, note its lower surge rating (600 mA IFSM vs. 30 A for 1N4007); use only where peak fault current remains below 600 mA.