Nexperia USA Inc. 1PS76SB21Z

Overview

1PS76SB21Z from Nexperia is a planar Schottky barrier diode with integrated guard ring for stress protection, rated at 40 V reverse voltage and 200 mA forward current, featuring 550 mV forward voltage at 200 mA, 40–50 pF capacitance at 0 V, and housed in an SOD323 (SC-76) package. It serves as a low-loss, ultra-high-speed switching element in compact power management and signal line protection circuits.

For engineers reviewing the 1PS76SB21Z datasheet, 1PS76SB21Z pinout, 1PS76SB21Z application, or 1PS76SB21Z equivalent, key selection criteria include forward voltage drop at 200 mA, reverse leakage at 30 V/100 °C, junction-to-ambient thermal resistance, diode capacitance at 1 MHz, and SOD323 footprint compatibility with high-density PCB layouts.

Technical Context

This Schottky diode employs a planar silicon structure with an integrated guard ring to suppress edge breakdown and improve ruggedness under transient stress. Its low forward voltage (300 mV at 10 mA, 550 mV at 200 mA) and low capacitance (typ. 40 pF) enable fast switching with minimal signal distortion.

The device operates across –65 °C to 150 °C ambient temperature and supports pulsed forward currents up to 1 A (8.3 ms half-sine). Thermal resistance of 450 K/W (junction-to-ambient, FR4, single-sided copper) defines its power dissipation limits in unheatsinked surface-mount applications.

Key Specifications

Pinout & Package

Encapsulated in the SOD323 (SC-76) surface-mount plastic package (1.7 mm × 1.25 mm × 0.95 mm), this two-terminal diode uses standard cathode-bar marking (S1 code) for polarity identification.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with RB520S-30T1G and BAT54C, the 1PS76SB21Z offers superior 40 V reverse rating and verified 550 mV VF at full 200 mA load in the widely adopted SOD323 footprint-making it optimal for industrial 5 V/12 V clamping and compact 3.3 V reverse protection where voltage margin and thermal predictability matter.

Availability

1PS76SB21Z is available at Aetrix Electronics and suitable for ultra-high-speed switching, voltage clamping, line termination, and reverse polarity protection requiring stable component supply and consistent SOD323 packaging across production batches.

Supply support for 1PS76SB21Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade components.

The 1PS76SB21Z belongs to Nexperia's Schottky diode portfolio designed specifically for space-constrained, high-efficiency power management and signal integrity applications in consumer, industrial, and communications equipment.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The 1PS76SB21Z has a maximum junction temperature (Tj) of 125 °C per Absolute Maximum Ratings. Continuous operation must ensure Tj stays within this limit, which-given its 450 K/W Rth(j-a)-requires limiting power dissipation to ≤110 mW in free-air FR4 mounting or implementing thermal relief pads and copper pours to reduce effective thermal resistance.

Is the SOD323 package compatible with standard reflow soldering profiles?

Yes-the SOD323 package is qualified for lead-free reflow soldering per J-STD-020. The recommended profile includes peak temperature ≤260 °C, time above liquidus 60–150 s, and ramp-up rate ≤3 °C/s. Figure 5 in the datasheet provides the exact solder land pattern (0.5 mm × 1.5 mm pads, 0.6 mm solder resist opening) for reliable joint formation.

Does the guard ring affect electrical performance beyond reliability?

The integrated guard ring does not alter nominal forward or reverse electrical parameters (VF, VR, IR), but it prevents premature edge breakdown under high dv/dt or localized ESD stress-thereby maintaining specified leakage and breakdown behavior across the full temperature range and lifetime, especially in noisy industrial environments.

How does reverse leakage change at elevated temperature?

Reverse leakage rises exponentially with temperature: IR is 15 µA at VR = 30 V and Tamb = 25 °C, but increases to 3 mA at the same voltage and Tj = 100 °C. This 200× increase must be accounted for in high-temperature clamping or precision bias networks where leakage-induced offset or power loss is critical.