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NXP Semiconductors 1PS76SB70/DG/B2115
- Part No.:
- 1PS76SB70/DG/B2115
- Manufacturer:
- NXP Semiconductors
- Category:
- Single Diodes
- Package:
- SC-76, SOD-323
- Datasheet:
-
1PS76SB70/DG/B2115.pdf
- Description:
- RECTIFIER DIODE
- Quantity:
- Payment:
- Shipping:
Inventory:7,388
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Product details
Overview
1PS76SB70/DG/B2115 from NXP Semiconductors is a single silicon Schottky diode in SOD323 (SC-76) surface-mount package, rated for 70 V reverse voltage and 70 mA forward current, with 410 mV forward voltage at 1 mA and 2 pF capacitance at 0 V - used in high-speed clamping and signal routing in portable power management circuits.
For engineers reviewing the 1PS76SB70/DG/B2115 datasheet, 1PS76SB70/DG/B2115 pinout, 1PS76SB70/DG/B2115 application, or 1PS76SB70/DG/B2115 equivalent, this page delivers verified electrical specs, validated SOD323 pin configuration, real-world use cases in ESD protection and RF detector biasing, and two confirmed alternative parts with documented differences.
Technical Context
This discrete Schottky diode leverages low-barrier metal-semiconductor junction design to achieve ultra-high-speed switching (sub-nanosecond recovery) and low forward voltage drop. Its 2 pF junction capacitance and 10 μA max reverse leakage at 70 V support stable RF and high-frequency signal path performance.
Thermal resistance from junction to ambient is 450 K/W under free-air conditions on FR4 PCB, enabling reliable operation up to 150 °C junction temperature. The device operates within −65 °C to +150 °C ambient range and is qualified for reflow soldering only.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 70 V - maximum blocking capability before breakdown; suitable for 48 V system clamping and 5 V/3.3 V rail protection. |
| Forward Current (IF) | 70 mA continuous - supports moderate signal-level rectification and biasing without thermal derating in SOD323 footprint. |
| Forward Voltage (VF) | 410 mV at 1 mA - enables low-loss biasing in low-power detector and sampling circuits. |
| Junction Capacitance (Cd) | 2 pF at 0 V - minimizes signal distortion in RF envelope detection and high-speed logic clamping. |
| Reverse Leakage (IR) | 10 μA at 70 V - ensures stable DC blocking in precision analog front-ends and battery monitoring paths. |
| Thermal Resistance (Rth(j-a)) | 450 K/W - defines power dissipation limit of ~150 mW in still air; requires minimal copper pour for thermal management. |
Pinout & Package
SOD323 (SC-76) plastic surface-mounted package with 2 leads; body dimensions 1.8 × 1.35 × 0.95 mm; cathode marked by bar on top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Connected to circuit ground or lower-potential node; polarity reference for forward conduction direction. |
| 2 | Anode | Input terminal for forward-biased operation; ties to signal source or positive rail in clamp configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra high-speed switching | Sub-ns reverse recovery time enables use in >1 GHz RF detector and sampling applications. |
| Low forward voltage | 410 mV at 1 mA reduces power loss in low-current bias networks and improves detector sensitivity. |
| Low junction capacitance | 2 pF at 0 V preserves signal integrity in high-frequency AC coupling and RF envelope detection paths. |
| High reverse breakdown voltage | 70 V rating allows direct integration into 48 V telecom line interfaces and industrial I/O protection. |
Applications
| Portable Power Management | RF Signal Detection |
|---|---|
Use Scenario: Voltage clamping and reverse polarity protection in USB-powered IoT sensor nodes. IC Role / Device Role / Timing Role: Discrete Schottky diode providing low-loss DC path control and transient suppression at input stage. Use Value: 410 mV VF minimizes dropout across input protection, preserving operating margin for 3.3 V LDOs. |
Use Scenario: Envelope detection in 2.4 GHz ISM-band receiver front-end. IC Role / Device Role / Timing Role: Passive RF detector diode converting RF amplitude to baseband DC voltage. Use Value: 2 pF Cd and sub-ns switching enable accurate demodulation without bandwidth limiting. |
| ESD Protection Interface | Low-Power Logic Clamping |
Use Scenario: I/O line protection for microcontroller GPIOs in handheld medical devices. IC Role / Device Role / Timing Role: Fast-switching Schottky clamp diverting ESD transients to ground before IC damage. Use Value: 10 μA IR at 70 V ensures negligible standby current draw while maintaining robust 70 V standoff. |
Use Scenario: Level-shifting and overvoltage clamping between mixed-voltage logic families (e.g., 1.8 V ↔ 3.3 V). IC Role / Device Role / Timing Role: Signal-path diode limiting voltage excursions during bus contention or hot-plug events. Use Value: 450 K/W Rth(j-a) allows sustained clamping at 70 mA without thermal runaway in compact layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAS70H | Same 70 V VR and 70 mA IF, but in larger SOD123F package (330 K/W Rth(j-a)); VF = 410 mV at 1 mA identical. | Higher thermal mass suits higher pulse-current duty cycles; less space-constrained designs. | Select BAS70H when board layout permits larger footprint and thermal performance outweighs size constraints. |
| 1PS79SB70 | Identical electrical specs (70 V VR, 70 mA IF, 410 mV VF), but in smaller SOD523 (SC-79) package (450 K/W Rth(j-a)); same 2 pF Cd. | Reduced footprint (1.25 × 0.85 mm vs. 1.8 × 1.35 mm) ideal for ultra-dense portable PCBs. | Choose 1PS79SB70 where board area is critical and thermal load remains within SOD523 limits. |
Compared with 1PS76SB70/DG/B2115, BAS70H offers better thermal dissipation in a larger package, while 1PS79SB70 provides identical performance in a 40 % smaller footprint - enabling trade-offs between thermal headroom and miniaturization without compromising clamping voltage or speed.
Availability
1PS76SB70/DG/B2115 is available at Aetrix Electronics and suitable for portable power management, RF signal detection, ESD protection interface, and low-power logic clamping requiring stable component supply and consistent parametric performance across production lots.
Supply support for 1PS76SB70/DG/B2115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.
The 1PS76SB70/DG/B2115 belongs to NXP's general-purpose Schottky diode family designed for high-speed signal routing, voltage clamping, and low-loss rectification in space-constrained, battery-operated systems.
FAQ
What is the maximum reverse voltage rating for the 1PS76SB70/DG/B2115?
The 1PS76SB70/DG/B2115 has a maximum reverse voltage (VR) rating of 70 V, as specified in Table 6 of the NXP datasheet. This value represents the absolute maximum DC or repetitive peak reverse voltage the device can withstand without breakdown under normal operating conditions, and must not be exceeded to ensure reliability.
What is the forward voltage of the 1PS76SB70/DG/B2115 at 1 mA forward current?
The forward voltage (VF) of the 1PS76SB70/DG/B2115 is 410 mV at 1 mA forward current, per Table 8 in the official NXP datasheet. This low VF enables efficient biasing and clamping in low-power analog and RF signal paths where voltage headroom is constrained.
Which package type does the 1PS76SB70/DG/B2115 use?
The 1PS76SB70/DG/B2115 uses the SOD323 (SC-76) surface-mount plastic package, as confirmed in Table 4 (Ordering Information) and Figure 5 (Package outline) of the NXP datasheet. Its dimensions are 1.8 × 1.35 × 0.95 mm with cathode indicated by a marking bar on the top surface.
How many terminals does the 1PS76SB70/DG/B2115 have, and what are their functions?
The 1PS76SB70/DG/B2115 has two terminals: Pin 1 is the cathode and Pin 2 is the anode, as defined in Table 3 (Pinning) of the NXP datasheet. This single-diode configuration supports unidirectional current flow from anode to cathode under forward bias.
What is the typical junction capacitance of the 1PS76SB70/DG/B2115?
The typical junction capacitance (Cd) of the 1PS76SB70/DG/B2115 is 2 pF measured at 0 V reverse bias and 1 MHz frequency, per Table 8 in the NXP datasheet. This low capacitance supports high-frequency signal integrity in RF detector and fast-switching clamp applications.
1PS76SB70/DG/B2115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- 1PS7xSB70
- Package/Case:
- SC-76, SOD-323
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 70 V
- Current - Average Rectified (Io):
- 70mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 15 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 10 µA @ 70 V
- Capacitance @ Vr, F:
- 2pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-323
- Operating Temperature - Junction:
- 150°C
1PS76SB70/DG/B2115 FAQ
1.How can I place an order for 1PS76SB70/DG/B2115 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1PS76SB70/DG/B2115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1PS76SB70/DG/B2115 reliable?
The price and inventory of 1PS76SB70/DG/B2115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1PS76SB70/DG/B2115 is usually 5 days.
3.What payment methods are accepted for 1PS76SB70/DG/B2115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1PS76SB70/DG/B2115 transactions.
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4.How is shipping managed for 1PS76SB70/DG/B2115?
1PS76SB70/DG/B2115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1PS76SB70/DG/B2115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1PS76SB70/DG/B2115?
For technical support, including 1PS76SB70/DG/B2115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1PS76SB70/DG/B2115 requirements.
6.How does Aetrix verify that 1PS76SB70/DG/B2115 is sourced from the original manufacturer or authorized distributors?
All 1PS76SB70/DG/B2115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1PS76SB70/DG/B2115 meets industry standards.
7.What is the process for return or replacement of 1PS76SB70/DG/B2115?
All 1PS76SB70/DG/B2115 units undergo pre-shipment inspection (PSI). If there is an issue with 1PS76SB70/DG/B2115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1PS76SB70/DG/B2115 part is unused and in its original packaging.
Return procedure for 1PS76SB70/DG/B2115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1PS76SB70/DG/B2115 Tags
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