Nexperia USA Inc. 1PS79SB10,115

Overview

1PS79SB10 from Nexperia is a planar Schottky barrier diode with integrated guard ring for stress protection, housed in an ultra-small SOD523 (SC-79) surface-mount package. It delivers 30 V reverse voltage rating, 200 mA continuous forward current, and 400 mV forward voltage at 10 mA - optimized for high-speed switching and clamping in space-constrained automotive and portable electronics.

For engineers reviewing the 1PS79SB10 datasheet, 1PS79SB10 pinout, 1PS79SB10 application, or 1PS79SB10 equivalent, key selection criteria include its AEC-Q101 qualification, low VF across 0.1–100 mA range, 10 pF capacitance at 1 V, thermal resistance of 450 K/W on FR4, and cathode-marked SOD523 footprint compatibility.

Technical Context

This discrete Schottky diode uses a planar junction structure with an integrated guard ring to enhance robustness against electrical overstress and ESD transients. Its low forward voltage stems from a metal-semiconductor interface engineered for minimal barrier height, enabling efficient conduction without minority-carrier storage delay.

The device operates across −65 °C to +125 °C ambient temperature and supports peak repetitive forward currents up to 300 mA (tp ≤ 1 s, δ ≤ 0.5) and non-repetitive surges up to 600 mA (tp < 10 ms). Thermal performance is specified for single-sided copper FR4 PCB mounting.

Key Specifications

Pinout & Package

Encapsulated in the SOD523 (SC-79) ultra-small surface-mount plastic package (1.2 mm × 0.8 mm × 0.6 mm), this two-terminal diode features a flat lead profile optimized for automated placement and reflow soldering on dense PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with RB521S-30T2R and NSR0230HT1G, the 1PS79SB10 uniquely combines AEC-Q101 qualification, SOD523 miniaturization, and 400 mV VF - making it optimal for automotive signal-line protection where space, reliability, and low conduction loss are jointly constrained.

Availability

1PS79SB10 is available at Aetrix Electronics and suitable for automotive ECU protection, USB interface clamping, DC-DC converter freewheeling, and low-voltage logic translation requiring stable component supply across production lifecycles.

Supply support for 1PS79SB10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete and logic devices for automotive, industrial, and mobile markets.

The 1PS79SB10 belongs to Nexperia's AEC-Q101-qualified Schottky diode product line, designed specifically for high-reliability signal integrity and power path protection in space-constrained automotive and portable electronics.

FAQ

Is the 1PS79SB10 suitable for bidirectional ESD protection?

No - it is a unidirectional Schottky diode with anode and cathode terminals. For bidirectional ESD protection, paired devices or dedicated TVS diodes like PESD5V0S1BA must be used. Its 30 V VR and 2 µA IR are specified for unidirectional blocking, and reverse conduction is not characterized for clamping.

What is the meaning of the 'F' marking on the 1PS79SB10 package?

The 'F' marking is the manufacturer's code for the 1PS79SB10 type, applied per Table 4 of the datasheet. It appears adjacent to the cathode bar on the SOD523 body and serves as a visual identifier for traceability and assembly verification - not a date or lot code.

Can the 1PS79SB10 replace a standard silicon diode in a 5 V rail clamp?

Yes - its 400 mV VF at 10 mA reduces power loss by ~65% versus a typical 1N4148 (VF ≈ 1.1 V), lowers thermal rise, and improves response time due to absence of minority-carrier storage. However, its 30 V VR limits use to rails ≤30 V; higher-voltage rails require alternative Schottky or TVS devices.

Does the guard ring affect the device's capacitance or leakage performance?

Yes - the guard ring increases edge termination area, slightly raising junction capacitance versus non-guarded equivalents (e.g., +1–2 pF), but it suppresses surface leakage paths, resulting in stable 2 µA IR at 25 V even after humidity exposure - critical for automotive under-hood reliability.