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Nexperia USA Inc. 1PS79SB30,115

Part No.:
1PS79SB30,115
Manufacturer:
Nexperia USA Inc.
Category:
Single Diodes
Package:
SC-79, SOD-523
Datasheet:
Aetrix1PS79SB30,115.pdf
Description:
DIODE SCHOTTKY 40V 200MA SOD523
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:80,018

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Product details

Overview

1PS79SB30,115 from Nexperia is a planar Schottky barrier diode with integrated guard ring for stress protection, rated at 40 V reverse voltage and 200 mA forward current, featuring 320–360 mV forward voltage at 10 mA and 25 °C, housed in an ultra-small SOD523 (SC-79) surface-mount package. It serves as a high-speed switching or clamping element in space-constrained power management and signal routing circuits.

For engineers reviewing the 1PS79SB30,115 datasheet, 1PS79SB30,115 pinout, 1PS79SB30,115 application, or 1PS79SB30,115 equivalent, key selection criteria include low VF performance at low currents (≤360 mV @ 10 mA), sub-0.5 µA reverse leakage at 25 V, 20 pF capacitance at 1 V, AEC-Q101 qualification, and SC-79 footprint compatibility for high-density PCB layouts.

Technical Context

This Schottky diode employs a planar junction structure with an integrated guard ring to enhance robustness against electrical overstress and improve reliability under transient conditions. Its low barrier height enables fast carrier injection and minimal minority-carrier storage, supporting ultra-high-speed switching up to hundreds of MHz.

The device operates within −65 °C to +150 °C ambient and junction temperature ranges, with thermal resistance of 450 K/W (junction-to-ambient, FR4 PCB, single-sided copper). It is qualified per AEC-Q101, confirming suitability for automotive-grade stress environments without derating in standard operating conditions.

Key Specifications

Parameter Value and Actual Design Meaning
Reverse Voltage (VR) 40 V - Maximum blocking capability before breakdown; defines safe operating range in clamping or reverse-biased applications.
Forward Current (IF) 200 mA continuous - Sustained conduction capacity; supports low-power rail steering and biasing without thermal runaway.
Forward Voltage (VF) 320–360 mV @ 10 mA, 25 °C - Enables efficient voltage clamping with minimal power loss in signal-level protection paths.
Reverse Current (IR) ≤0.5 µA @ 25 V, pulsed - Ensures negligible leakage in high-impedance sensing or sample-hold circuits.
Diode Capacitance (Cd) 20 pF @ 1 V, 1 MHz - Limits high-frequency signal distortion; suitable for RF detector or fast-switching logic interface roles.
Junction Temperature (Tj) 150 °C max - Allows operation in under-hood automotive modules or enclosed industrial controllers without forced cooling.
Thermal Resistance (Rth(j-a)) 450 K/W - Indicates self-heating rise of ~90 K at 200 mA on standard FR4; informs layout decisions for thermal relief pads.

Pinout & Package

Encapsulated in the SOD523 (SC-79) plastic surface-mount package: 1.2 mm × 0.8 mm × 0.6 mm body, flat lead configuration, cathode marked by bar on top surface.

Pin/Terminal Circuit Role Design Meaning
1 Cathode (K) Negative terminal; marking bar aligns with this pin-critical for correct orientation during automated placement and polarity-sensitive clamping.
2 Anode (A) Positive terminal; connects to higher-potential node in forward conduction path or to ground in reverse-biased protection configurations.

Key Features

Feature Design Value
Guard ring integration Improves ESD and surge immunity by preventing edge breakdown-enables reliable operation in noisy automotive CAN/LIN bus interfaces.
Ultra-low VF at low IF 250–290 mV @ 1 mA enables precise voltage thresholding in battery monitoring comparators without loading reference nodes.
SOD523 footprint 0.8 mm width allows ≥0.2 mm solder mask dams between adjacent components-supports 0.4 mm pitch routing in wearables and IoT sensors.
AEC-Q101 qualification Validated for automotive discrete stress tests including HTGB, HTRB, and ESD-HBM ≥2 kV-permits direct use in ADAS power supervisors.

Applications

USB Port Protection Automotive LIN Bus Clamping

Use Scenario: Preventing backfeed and ESD transients on USB 2.0 data lines in portable medical devices.

IC Role / Device Role / Timing Role: Bidirectional clamping diode placed between D+ and D− lines and chassis ground.

Use Value: 20 pF capacitance avoids signal integrity degradation at 480 Mbps; 0.5 µA IR prevents DC bias shift in differential receivers.

Use Scenario: Suppressing load-dump spikes on LIN transceiver supply rails in door module ECUs.

IC Role / Device Role / Timing Role: Reverse-polarity and overvoltage clamp across VCC and GND pins.

Use Value: 40 V VR rating covers ISO 7637-2 Pulse 5a (up to 35 V); guard ring ensures survival during repeated 100 V/50 ms surges.

Low-Power Sensor Biasing RF Detector Input Stage

Use Scenario: Providing isolated bias current to MEMS pressure sensor bridges in battery-powered HVAC controllers.

IC Role / Device Role / Timing Role: Blocking diode in constant-current source path to prevent reverse leakage into reference voltage dividers.

Use Value: 250 mV VF @ 1 mA minimizes headroom loss; 0.5 µA IR avoids >1 LSB error in 16-bit ADC reference networks.

Use Scenario: Demodulating 868 MHz ISM band signals in smart meter RF front-ends.

IC Role / Device Role / Timing Role: Zero-bias envelope detector anode connected to antenna matching network.

Use Value: Low Cd (20 pF) preserves Q-factor of LC tank; Schottky barrier enables sub-100 mV detection threshold for weak signal recovery.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
RB520S-40T1G (ON Semiconductor) Higher VF (450 mV @ 10 mA); same 40 V VR; SOD-523 package; no AEC-Q101 qualification. Lacks automotive stress validation; unsuitable for under-hood deployment without additional system-level testing. Select when cost sensitivity outweighs AEC-Q101 requirement and VF margin permits.
SD103ATW-7-F (Diodes Inc.) Lower VR (30 V); higher IF (350 mA); SOD-323 package (larger footprint); AEC-Q101 qualified. Requires PCB redesign due to 1.7 mm × 1.25 mm body; insufficient for 35 V load-dump scenarios. Choose only if higher current handling is critical and voltage margin allows reduction to 30 V.

Compared with RB520S-40T1G and SD103ATW-7-F, the 1PS79SB30,115 uniquely balances AEC-Q101 compliance, 40 V rating, and ultra-low VF in the smallest SOD523 footprint-making it optimal for space-limited automotive and portable electronics where leakage, speed, and qualification are jointly constrained.

Availability

1PS79SB30,115 is available at Aetrix Electronics and suitable for USB port protection, automotive LIN bus clamping, low-power sensor biasing, and RF detector input stages requiring stable component supply across production lifecycles.

Supply support for 1PS79SB30,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors-including logic, discretes, MOSFETs, and ESD protection devices.

The 1PS79SB30,115 belongs to Nexperia's AEC-Q101-qualified Schottky diode portfolio, engineered specifically for automotive signal integrity and power rail protection in compact, thermally constrained modules.

FAQ

What is the maximum allowable peak forward current for 1PS79SB30,115?

The non-repetitive peak forward current (IFSM) is 1 A for an 8.3 ms half-sine wave pulse at 25 °C initial junction temperature. This rating supports brief inrush events such as hot-plug insertion or capacitor charging surges without permanent degradation, provided thermal mass limits average power dissipation.

Does the 1PS79SB30,115 require derating at elevated ambient temperatures?

Yes-continuous forward current must be linearly derated above 75 °C ambient. At 125 °C, the maximum IF drops to approximately 120 mA based on the 450 K/W Rth(j-a) and 150 °C Tj limit. Derating curves are provided in Figure 1 of the official datasheet for precise thermal modeling.

Can the 1PS79SB30,115 be used in bidirectional ESD protection configurations?

No-it is a unidirectional Schottky diode with defined anode and cathode terminals. For bidirectional ESD protection, paired devices or dedicated TVS arrays (e.g., PESD5V0S1BA) are required. Its guard ring enhances unidirectional surge tolerance but does not enable reverse conduction.

What is the significance of the 'G1' marking on the 1PS79SB30,115 package?

'G1' is the manufacturer's top-side marking code for the 1PS79SB30 type, per Table 4 of the datasheet. The cathode is identified by a bar adjacent to pin 1, independent of the alphanumeric mark-ensuring unambiguous orientation during automated optical inspection and pick-and-place operations.

1PS79SB30,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SC-79, SOD-523
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
40 V
Current - Average Rectified (Io):
200mA
Voltage - Forward (Vf) (Max) @ If:
600 mV @ 200 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
500 nA @ 25 V
Capacitance @ Vr, F:
20pF @ 1V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOD-523
Operating Temperature - Junction:
150°C (Max)

1PS79SB30,115 FAQ

1.How can I place an order for 1PS79SB30,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for 1PS79SB30,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1PS79SB30,115 reliable?

The price and inventory of 1PS79SB30,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1PS79SB30,115 is usually 5 days.

3.What payment methods are accepted for 1PS79SB30,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1PS79SB30,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1PS79SB30,115?

1PS79SB30,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1PS79SB30,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1PS79SB30,115?

For technical support, including 1PS79SB30,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1PS79SB30,115 requirements.

6.How does Aetrix verify that 1PS79SB30,115 is sourced from the original manufacturer or authorized distributors?

All 1PS79SB30,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1PS79SB30,115 meets industry standards.

7.What is the process for return or replacement of 1PS79SB30,115?

All 1PS79SB30,115 units undergo pre-shipment inspection (PSI). If there is an issue with 1PS79SB30,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1PS79SB30,115 part is unused and in its original packaging.

Return procedure for 1PS79SB30,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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