Nexperia USA Inc. 1PS79SB31,115

Overview

1PS79SB31 from Nexperia is a planar Schottky barrier diode in SOD523 (SC-79) package, rated for 30 V reverse voltage, 200 mA forward current, and 255–300 mV forward voltage at 10 mA. It serves as a low-loss rectifier and clamping device in space-constrained, low-power portable electronics.

For engineers reviewing the 1PS79SB31 datasheet, 1PS79SB31 pinout, 1PS79SB31 application, or 1PS79SB31 equivalent, key selection criteria include ultra-low VF at low IF, guard ring protection for reliability, SOD523 footprint compatibility, and thermal resistance of 450 K/W on FR4 PCB.

Technical Context

This discrete Schottky diode uses a planar silicon structure with guard ring passivation to suppress edge breakdown and ensure stable reverse leakage (<30 µA at 10 V). Its low junction capacitance (20–25 pF at 1 V, 1 MHz) supports high-speed switching up to hundreds of MHz.

The device operates across −65 °C to +125 °C ambient, with maximum junction temperature limited to 125 °C. Thermal resistance from junction-to-ambient is 450 K/W under standard single-sided FR4 mounting-critical for thermal design in unheatsinked handheld PCB layouts.

Key Specifications

Pinout & Package

Package: SOD523 (SC-79), plastic surface-mount, 1.2 mm × 0.8 mm × 0.6 mm body, single-sided copper FR4 mountable. Cathode identified by marking bar.

Key Features

Applications

Availability

1PS79SB31 is available at Aetrix Electronics and suitable for USB port protection, smartphone power management, wearable sensor biasing, and IoT wireless module clamping requiring stable component supply and consistent SOD523 footprint availability.

Supply support for 1PS79SB31 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, mobile, and computing markets.

The 1PS79SB31 belongs to Nexperia's Schottky diode portfolio designed specifically for ultra-compact, low-power signal integrity and rail protection in portable and space-constrained electronics.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 125 °C. Operation above this value risks permanent degradation of the Schottky metallization and silicon interface. Derating is required when ambient exceeds 85 °C or power dissipation exceeds 44 mW on standard FR4, based on Rth(j-a) = 450 K/W.

Is the 1PS79SB31 suitable for automotive applications?

No. The 1PS79SB31 is not AEC-Q200 qualified and lacks automotive-grade screening, temperature cycling validation, or extended lifetime testing. Nexperia explicitly states non-automotive qualification in its legal disclaimers and recommends dedicated automotive Schottky diodes for such use cases.

How does the guard ring affect ESD robustness?

The integrated guard ring suppresses edge-related avalanche, improving uniformity of reverse breakdown and raising the effective ESD failure threshold. Measured HBM ESD rating is 8 kV (Class 3B), directly enabled by this edge termination structure-not achievable with unguarded planar Schottky processes.

Can this diode replace a 1N5711 in a low-current rectifier circuit?

Yes, with design verification. The 1PS79SB31 offers lower VF (255–300 mV vs. ~430 mV for 1N5711 at 10 mA) and smaller footprint (SOD523 vs. DO-35), but has lower IF rating (200 mA vs. 300 mA) and no axial-leaded mechanical form factor-requiring PCB redesign and thermal revalidation.