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Nexperia USA Inc. 1PS88SB82,165
- Part No.:
- 1PS88SB82,165
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
1PS88SB82,165.pdf
- Description:
- DIODE ARR SCHOTT 15V 30MA 6TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:4,883
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Product details
Overview
1PS88SB82 from Nexperia is a triple isolated Schottky barrier diode in SOT363 (SC-88) package, designed for ultra-high-speed switching and RF signal conditioning. It delivers 15 V reverse voltage rating, 30 mA continuous forward current, sub-1 pF diode capacitance at 0 V bias, 700 mV forward voltage at 30 mA, and 0.2 μA reverse leakage at 1 V - enabling low-distortion RF detection and clamping in compact wireless front-ends.
For engineers reviewing the 1PS88SB82 datasheet, 1PS88SB82 pinout, 1PS88SB82 application, or 1PS88SB82 equivalent, key selection criteria include verified low-junction-capacitance performance at 1 MHz, triple-diode isolation for independent signal path routing, thermal resistance of 416 K/W in free air, and compatibility with reflow-only soldering per JEITA SC-88 standards.
Technical Context
This triple Schottky diode integrates three electrically isolated anode-cathode pairs in a single 6-pin SC-88 package, supporting independent biasing and signal routing without cross-talk. Each diode exhibits low differential resistance (12 Ω typ. at 5 mA) and minimal voltage-dependent capacitance variation - critical for mixer and detector linearity.
The device operates across −65 °C to +125 °C ambient, with junction temperature limited to 125 °C. Its 1 pF typical capacitance at 0 V and 1 MHz enables stable impedance matching in 50 Ω RF paths up to UHF frequencies, while the 340 mV VF at 1 mA supports low-threshold clamping in digital logic interfaces.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VR (Reverse Voltage) | 15 V - defines maximum DC or peak RF voltage each diode can block without breakdown in clamping or detector applications. |
| IF (Forward Current) | 30 mA continuous - supports sustained conduction in high-duty-cycle switching or bias networks without thermal runaway. |
| Cd (Diode Capacitance) | 1 pF at VR = 0 V, f = 1 MHz - ensures minimal signal loading and phase shift in RF mixers and detectors up to ~1 GHz. |
| VF (Forward Voltage) | 700 mV at IF = 30 mA - enables low-loss rectification and fast turn-on in high-speed digital clamping circuits. |
| IR (Reverse Current) | 0.2 μA at VR = 1 V - guarantees low leakage-induced offset error in precision RF detector and sampling applications. |
| Rth(j-a) | 416 K/W - determines self-heating under full-load conditions; requires PCB copper area planning for thermal management. |
Pinout & Package
SOT363 (SC-88) is a 6-lead plastic surface-mount package measuring 2.2 mm × 1.35 mm × 0.95 mm, optimized for high-density RF and digital PCB layouts. Standard reflow soldering is required; wave soldering is not recommended.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode (Diode 1) | Input node for first independent Schottky path; used for signal injection or bias feed in multi-path RF designs. |
| 2 | Anode (Diode 2) | Second isolated anode terminal; enables dual-channel clamping or balanced mixer configurations. |
| 3 | Anode (Diode 3) | Third independent anode; supports triple-signal routing such as I/Q/LO paths in direct-conversion receivers. |
| 4 | Cathode (Diode 3) | Return path for Diode 3; must be routed separately to avoid coupling into Diodes 1 or 2 cathodes. |
| 5 | Cathode (Diode 2) | Return path for Diode 2; maintains isolation between cathode nets to preserve channel independence. |
| 6 | Cathode (Diode 1) | Return path for Diode 1; shared ground connection only if all three diodes operate at identical DC potential. |
Key Features
| Feature | Design Value |
|---|---|
| Triple isolated diodes | Three independent Schottky junctions in one SC-88 footprint - reduces board area by >60% vs. discrete SOD-323 solutions. |
| Ultra-low capacitance | 1 pF typical at 0 V - preserves signal integrity in 50 Ω RF paths up to 1 GHz without added tuning components. |
| Low forward voltage | 340 mV at 1 mA - enables reliable clamping of low-amplitude logic signals (e.g., 1.8 V LVCMOS) without forward conduction loss. |
| Reflow-compatible packaging | SOT363 meets JEDEC J-STD-020 moisture sensitivity level 1 - allows standard Pb-free reflow without pre-bake. |
| Wide temperature range | −65 °C to +125 °C operation - qualified for automotive infotainment RF modules and industrial wireless sensors. |
Applications
| Ultra-High-Speed Digital Clamping | RF Diode Ring Mixer |
|---|---|
|
Use Scenario: Protecting high-speed data lines (e.g., USB 2.0, MIPI D-PHY) from ESD-induced overshoot and undershoot. IC Role / Device Role / Timing Role: Passive clamping element limiting signal swing to safe levels using forward conduction of individual diodes. Use Value: Sub-1 pF capacitance prevents signal edge degradation; 700 mV VF ensures clamping activates before logic threshold violation. |
Use Scenario: Balanced frequency conversion in 2.4 GHz ISM-band transceivers, where LO drives a ring configuration. IC Role / Device Role / Timing Role: Four-quadrant switching element in passive ring topology, leveraging matched triple-diode characteristics. Use Value: Triple isolation enables precise LO-to-RF/IF port separation; low Cd minimizes conversion loss and improves port match. |
| RF Detector for RSSI Monitoring | RF Voltage Doubler |
|
Use Scenario: Converting received RF power to DC voltage for real-time signal strength indication in Bluetooth LE receivers. IC Role / Device Role / Timing Role: Half-wave rectifier stage converting envelope-modulated RF to proportional baseband voltage. Use Value: 0.2 μA IR at 1 V ensures accurate low-level detection; 12 Ω rdif supports fast envelope tracking up to 10 MHz. |
Use Scenario: Generating doubled DC supply from low-power RF energy harvesting sources (e.g., NFC field coupling). IC Role / Device Role / Timing Role: Dual-diode charge-pump stage exploiting complementary anode/cathode routing in SOT363. Use Value: Matched VF and Cd across diodes ensure symmetrical charging; 15 V VR rating accommodates peak doubler output ripple. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar triple Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1PS66SB82 | SOT666 package (larger footprint, 700 K/W Rth(j-a)); same electrical specs; different pin mapping (1–6 order reversed). | Less suitable for ultra-dense RF layouts; higher thermal resistance limits sustained 30 mA operation in confined spaces. | Select when board space permits larger pitch and thermal mass is advantageous for intermittent duty cycles. |
| RB050M-40 | Single Schottky diode in SOD-123; 40 V VR, 500 mA IF, 30 pF Cd - no triple isolation or RF-optimized capacitance. | Cannot replace 1PS88SB82 in ring mixers or multi-path clamping; usable only as drop-in replacement in single-diode detector roles. | Choose only for cost-sensitive, non-RF applications where triple isolation and sub-2 pF capacitance are unnecessary. |
Compared with 1PS66SB82, the 1PS88SB82 offers 41% lower thermal resistance and tighter board placement; versus RB050M-40, it provides true triple isolation and 30× lower capacitance - making it irreplaceable in RF signal-path-critical designs.
Availability
1PS88SB82 is available at Aetrix Electronics and suitable for ultra-high-speed digital clamping, RF ring mixers, RSSI detectors, and RF voltage doublers requiring stable component supply across automotive infotainment, industrial wireless sensors, and consumer IoT platforms.
Supply support for 1PS88SB82 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - including logic, discretes, MOSFETs, and ESD protection devices.
The 1PS88SB82 belongs to Nexperia's low-Cd Schottky diode product line, engineered specifically for RF signal integrity and high-speed digital interface protection in space-constrained wireless and portable electronics.
FAQ
Is the 1PS88SB82 suitable for 5 GHz WiFi front-end applications?
No. While its 1 pF capacitance supports operation up to ~1 GHz, parasitic inductance from SOT363 leads and package resonance limit effective use beyond 2.5 GHz. For 5 GHz, consider GaAs Schottky diodes or integrated MMIC detectors with sub-0.1 pF junction capacitance and optimized RF pads.
Can Pin 1 and Pin 6 be tied together as a common anode-cathode pair?
No. Pin 1 is Anode 1 and Pin 6 is Cathode 1 - they form Diode 1. Tying them defeats the diode function. However, Pins 1, 2, and 3 may share a common anode net only if all three diodes require identical forward bias; cathodes (Pins 4–6) must remain isolated to maintain triple-diode independence.
What is the maximum allowable peak RF voltage during detector operation?
The absolute maximum reverse voltage is 15 V DC, but for repetitive RF signals, peak inverse voltage must stay below 12 V to ensure margin against voltage spikes and thermal stress. At 1 MHz, derating to 10 V peak is recommended for >10⁶ cycle reliability in RSSI monitoring circuits.
Does the 1PS88SB82 require external biasing for RF mixer operation?
No. As a passive diode ring mixer core, it operates without DC bias - relying solely on LO drive amplitude to switch RF/IF paths. However, optimal conversion loss requires LO power ≥ +7 dBm; insufficient drive increases insertion loss and degrades port isolation.
1PS88SB82,165 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Configuration:
- 3 Independent
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 15 V
- Current - Average Rectified (Io) (per Diode):
- 30mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 700 mV @ 30 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 200 nA @ 1 V
- Operating Temperature - Junction:
- 125°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
1PS88SB82,165 FAQ
1.How can I place an order for 1PS88SB82,165 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1PS88SB82,165 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1PS88SB82,165 reliable?
The price and inventory of 1PS88SB82,165 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1PS88SB82,165 is usually 5 days.
3.What payment methods are accepted for 1PS88SB82,165?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1PS88SB82,165 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1PS88SB82,165?
1PS88SB82,165 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1PS88SB82,165 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1PS88SB82,165?
For technical support, including 1PS88SB82,165 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1PS88SB82,165 requirements.
6.How does Aetrix verify that 1PS88SB82,165 is sourced from the original manufacturer or authorized distributors?
All 1PS88SB82,165 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1PS88SB82,165 meets industry standards.
7.What is the process for return or replacement of 1PS88SB82,165?
All 1PS88SB82,165 units undergo pre-shipment inspection (PSI). If there is an issue with 1PS88SB82,165, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1PS88SB82,165 part is unused and in its original packaging.
Return procedure for 1PS88SB82,165:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1PS88SB82,165 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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