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Renesas 1SS119-04TJ-E
- Part No.:
- 1SS119-04TJ-E
- Manufacturer:
- Renesas
- Category:
- Single Diodes
- Package:
- -
- Datasheet:
-
1SS119-04TJ-E.pdf
- Description:
- RECTIFIER DIODES
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Product details
Overview
1SS119-04TJ-E from Renesas is a silicon epitaxial planar switching diode in a miniature glass MHD package, rated for 30 V reverse voltage, 150 mA average rectified current, and featuring 3.0 pF max capacitance and 3.5 ns max reverse recovery time. It serves as a high-speed signal path switch in RF detector, sample-and-hold, and fast logic interface circuits.
For engineers reviewing the 1SS119-04TJ-E datasheet, 1SS119-04TJ-E pinout, 1SS119-04TJ-E application, or 1SS119-04TJ-E equivalent, key selection criteria include low-junction-capacitance operation at 1 MHz, sub-4 ns trr under 10 mA forward/6 V reverse test conditions, and compatibility with automated placement due to its 2.0 mm diameter MHD glass package.
Technical Context
This diode employs an epitaxial planar structure optimized for minimal charge storage and rapid carrier recombination, enabling nanosecond-scale switching transitions. Its low 3.0 pF capacitance at 1 V reverse bias supports high-frequency signal routing up to UHF bands without significant phase distortion.
The device operates with a maximum junction temperature of 175°C and withstands non-repetitive surge currents up to 1 A, making it suitable for transient-tolerant front-end protection and pulse conditioning where thermal robustness and speed are jointly critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Recovery Time (trr) | 3.5 ns max - enables clean edge fidelity in >100 MHz digital sampling and RF envelope detection |
| Junction Capacitance (C) | 3.0 pF max at VR = 1 V, f = 1 MHz - minimizes loading on high-Z signal nodes and preserves bandwidth |
| Peak Reverse Voltage (VRM) | 35 V - supports safe margin over 24 V system rails and transient clamping applications |
| Average Rectified Current (IO) | 150 mA - sufficient for continuous signal-level switching in sensor interfaces and logic translators |
| Forward Voltage (VF) | 0.8 V max at IF = 10 mA - ensures low conduction loss in low-power bias and clamp circuits |
| Power Dissipation (Pd) | 250 mW - compatible with passive cooling in compact PCB layouts and sealed modules |
Pinout & Package
1SS119-04TJ-E uses the MHD glass package (JEITA code GRZZ0002ZC-A), measuring Ø2.0 mm × 26.0 mm length, with mass ~0.084 g. The small cylindrical form factor supports wave soldering and high-density mounting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Connected to reference or return path; marked by light blue band; carries reverse-biased leakage current & defines clamping threshold |
| 2 | Anode | Signal input or source node; forward conduction path during active switching; determines forward voltage drop direction |
Key Features
| Feature | Design Value |
|---|---|
| Low junction capacitance | 3.0 pF max enables minimal signal attenuation in 50 Ω RF paths up to 1 GHz |
| Nanosecond reverse recovery | 3.5 ns max ensures <5% timing skew in 200 Mbps digital signal routing |
| High junction temperature rating | 175°C max allows reliable operation in automotive under-hood and industrial motor-control environments |
| Small glass MHD package | Ø2.0 mm × 26 mm profile supports automated pick-and-place and eliminates thermal stress from plastic molding |
Applications
| RF Detector Circuit | High-Speed Logic Interface |
|---|---|
Use Scenario: Demodulating AM signals in portable radio receivers and IoT sensor transceivers. IC Role / Device Role / Timing Role: Signal-path switching diode acting as envelope detector with minimal harmonic distortion. Use Value: 3.0 pF capacitance and 3.5 ns trr preserve modulation integrity up to 433 MHz ISM band frequencies. | Use Scenario: Level-shifting and isolation between 3.3 V microcontroller GPIO and 5 V legacy peripherals. IC Role / Device Role / Timing Role: Fast-turn-on/off clamping diode preventing overshoot and latch-up during bus arbitration. Use Value: Sub-4 ns recovery prevents false triggering in 20–50 MHz SPI/I²C clock domains. |
| Sample-and-Hold Input Stage | Pulse Width Modulation (PWM) Snubber |
Use Scenario: Acquiring analog sensor outputs in data acquisition systems with ≥1 MSPS sampling rates. IC Role / Device Role / Timing Role: Hold capacitor charging/discharging switch with ultra-low charge injection. Use Value: Low C and fast trr reduce aperture uncertainty to <10 ps, supporting 12-bit effective resolution. | Use Scenario: Suppressing voltage spikes across MOSFET drains in 20–100 kHz motor drive inverters. IC Role / Device Role / Timing Role: Fast-recovery snubbing diode conducting flyback energy during turn-off transitions. Use Value: 150 mA IO and 35 V VRM handle repetitive 48 V rail transients without thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4148WS-7-F | Higher VF (1.0 V max), larger SOD-323 package (1.7 × 1.25 mm), 4.0 pF C, 4.0 ns trr | Suitable for general-purpose logic clamping but less optimal for RF detector linearity | Prefer 1SS119-04TJ-E when sub-3.5 ns trr and ≤3.0 pF are required in space-constrained RF designs |
| BAT54C,215 | Dual common-cathode configuration, 30 V VR, 200 mA IO, 10 pF C, 5 ns trr | Used in dual-rail protection and ESD-clamped I/O buffers; higher capacitance limits HF use | Select 1SS119-04TJ-E for single-diode, ultra-low-C, nanosecond-speed roles where layout area and signal fidelity are prioritized |
Compared with 1N4148WS-7-F and BAT54C,215, the 1SS119-04TJ-E delivers the lowest measured capacitance and fastest verified recovery time in a hermetically sealed glass package-critical for repeatable RF detector gain and minimal timing jitter in high-speed sampling.
Availability
1SS119-04TJ-E is available at Aetrix Electronics and suitable for RF detector circuits, high-speed logic interfaces, sample-and-hold input stages, and PWM snubber networks requiring stable component supply across production lifecycles.
Supply support for 1SS119-04TJ-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog power, and connectivity solutions for automotive, industrial, and IoT applications.
The 1SS119-04TJ-E belongs to Renesas' discrete high-speed switching diode product line, engineered specifically for signal integrity preservation in RF, test instrumentation, and precision timing subsystems.
FAQ
What is the maximum reverse recovery time specified for the 1SS119-04TJ-E?
The 1SS119-04TJ-E has a maximum reverse recovery time (trr) of 3.5 ns, tested under standardized conditions of IF = 10 mA, VR = 6 V, and RL = 50 Ω. This value is guaranteed across the full operating temperature range and reflects the device's capability for clean, fast transitions in high-frequency switching applications such as RF detection and digital signal routing.
Does the 1SS119-04TJ-E have a defined forward voltage rating?
Yes, the 1SS119-04TJ-E specifies a maximum forward voltage (VF) of 0.8 V at IF = 10 mA and Ta = 25°C. This low VF supports efficient conduction in low-power signal-switching roles while minimizing self-heating and voltage drop errors in precision analog paths.
What package type does the 1SS119-04TJ-E use, and how is polarity marked?
The 1SS119-04TJ-E uses the MHD glass package (JEITA code GRZZ0002ZC-A), with a Ø2.0 mm diameter and 26.0 mm length. Polarity is indicated by a light blue cathode band adjacent to Pin 1, which is the cathode terminal; Pin 2 is the anode.
Can the 1SS119-04TJ-E be used in RF applications above 100 MHz?
Yes, the 1SS119-04TJ-E is qualified for RF applications up to at least 433 MHz, supported by its 3.0 pF max junction capacitance at 1 V reverse bias and 3.5 ns max trr. These parameters ensure minimal insertion loss and phase distortion in antenna front-ends, envelope detectors, and mixer LO injection paths.
What is the peak reverse voltage rating for the 1SS119-04TJ-E?
The 1SS119-04TJ-E has a peak reverse voltage (VRM) rating of 35 V and a continuous reverse voltage (VR) rating of 30 V. These ratings provide design margin for transient suppression and DC blocking in 24 V industrial control and battery-powered RF modules.
1SS119-04TJ-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- -
- Voltage - DC Reverse (Vr) (Max):
- -
- Current - Average Rectified (Io):
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Speed:
- -
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- -
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Operating Temperature - Junction:
- -
1SS119-04TJ-E FAQ
1.How can I place an order for 1SS119-04TJ-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 1SS119-04TJ-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1SS119-04TJ-E reliable?
The price and inventory of 1SS119-04TJ-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1SS119-04TJ-E is usually 5 days.
3.What payment methods are accepted for 1SS119-04TJ-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1SS119-04TJ-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1SS119-04TJ-E?
1SS119-04TJ-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1SS119-04TJ-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1SS119-04TJ-E?
For technical support, including 1SS119-04TJ-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1SS119-04TJ-E requirements.
6.How does Aetrix verify that 1SS119-04TJ-E is sourced from the original manufacturer or authorized distributors?
All 1SS119-04TJ-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1SS119-04TJ-E meets industry standards.
7.What is the process for return or replacement of 1SS119-04TJ-E?
All 1SS119-04TJ-E units undergo pre-shipment inspection (PSI). If there is an issue with 1SS119-04TJ-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1SS119-04TJ-E part is unused and in its original packaging.
Return procedure for 1SS119-04TJ-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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