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Renesas 1SS119-14TA-E

Part No.:
1SS119-14TA-E
Manufacturer:
Renesas
Category:
Single Diodes
Package:
-
Datasheet:
Aetrix1SS119-14TA-E.pdf
Description:
DIODE FOR HIGH SPEED SWITCHING
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:200,000

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Product details

Overview

1SS119-14TA-E from Renesas is a silicon epitaxial planar switching diode in a miniature MHD glass package, rated for 30 V reverse voltage, 150 mA average forward current, and featuring 3.0 pF max capacitance and 3.5 ns max reverse recovery time. It serves as a high-speed signal path switch in RF front-ends and digital logic interface circuits.

For engineers reviewing the 1SS119-14TA-E datasheet, 1SS119-14TA-E pinout, 1SS119-14TA-E application, or 1SS119-14TA-E equivalent, key selection criteria include low junction capacitance, fast trr performance under 10 mA/6 V test conditions, cathode-band polarity marking, and MHD package compatibility with automated placement systems.

Technical Context

This diode uses an epitaxial planar structure to achieve low stored charge and rapid carrier recombination, enabling sub-4 ns reverse recovery. Its MHD glass package provides hermetic sealing and thermal stability up to 175°C junction temperature.

Designed for small-signal switching-not power rectification-the 1SS119-14TA-E operates with VF ≤ 0.8 V at 10 mA and IR ≤ 0.1 µA at 30 V, supporting low-leakage, high-isolation signal routing in broadband applications.

Key Specifications

ParameterValue and Actual Design Meaning
Reverse Recovery Time (trr)≤3.5 ns at IF=10 mA, VR=6 V, RL=50 Ω - enables >100 MHz switching in pulse shaping and sampling circuits
Junction Capacitance (C)≤3.0 pF at VR=1 V, f=1 MHz - minimizes signal loading in RF detector and mixer bias networks
Peak Reverse Voltage (VRM)35 V - supports transient-tolerant operation in 24 V industrial control I/O stages
Average Forward Current (IO)150 mA - sufficient for logic-level clamping and protection in CMOS/TTL interface circuits
Forward Voltage (VF)≤0.8 V at IF=10 mA - ensures low insertion loss and minimal DC offset in signal-path switching
Junction Temperature (Tj)−65°C to +175°C - allows deployment in under-hood automotive modules and high-temp industrial sensors

Pinout & Package

The 1SS119-14TA-E is housed in a hermetically sealed MHD glass package (JEITA code GRZZ0002ZC-A), measuring Ø2.0 mm × 2.4 mm length, with mass ≈0.084 g. Cathode identified by light blue band.

Pin/TerminalCircuit RoleDesign Meaning
1CathodeConnected to reference/ground side in series-switch configuration; polarity marker critical for ESD protection orientation
2AnodeSignal input or source node in shunt-clamp topology; forward-biased during active conduction state

Key Features

FeatureDesign Value
Low junction capacitance3.0 pF max enables minimal phase distortion in 50 Ω RF signal paths up to 1 GHz
Ultrafast reverse recovery3.5 ns max supports clean edge transitions in high-frequency sample-and-hold and pulse generation
MHD glass packageHermetic seal and small footprint (Ø2.0 × L2.4 mm) allow reliable reflow soldering and high-density PCB layout
High junction temperature rating175°C Tj supports operation in thermally constrained enclosures without derating below 150 mA IO

Applications

RF Detector CircuitsDigital Logic Clamping

Use Scenario: Demodulating AM signals in portable radio receivers using envelope detection.

IC Role / Device Role / Timing Role: Signal-path switching diode acting as a half-wave rectifier in passive detector topology.

Use Value: 3.0 pF capacitance prevents high-frequency roll-off; 3.5 ns trr avoids distortion of carrier harmonics above 100 MHz.

Use Scenario: Preventing overvoltage on CMOS input pins during hot-plug events in industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Shunt-connected clamping diode limiting input swing to VDD+0.8 V and GND–0.1 µA leakage.

Use Value: Low VF (≤0.8 V) ensures precise clamping threshold; MHD package withstands repeated ESD transients per IEC 61000-4-2.

High-Speed Sampling GatesVideo Signal Switching

Use Scenario: Gating analog video signals in broadcast-grade test equipment with 50 MHz sample clock rates.

IC Role / Device Role / Timing Role: Series-switch element controlling signal passage synchronized to sampling pulse edges.

Use Value: Sub-4 ns trr eliminates ghosting artifacts; 150 mA IO handles peak video sync current without saturation.

Use Scenario: Multiplexing RGB component video signals in AV matrix switchers with <1 ns skew tolerance.

IC Role / Device Role / Timing Role: Bidirectional signal-path switch isolating unused channels while preserving impedance continuity.

Use Value: Matched C and trr across channels ensure uniform group delay; MHD package minimizes parasitic inductance in 75 Ω traces.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed switching diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
1N4148W-7-FHigher trr (4.0 ns max), same M7 package but SOD-123 outline; VF = 1.0 V @ 10 mAMarginally slower recovery limits use above 80 MHz; higher VF increases clamp voltage errorAcceptable where cost sensitivity outweighs 0.5 ns trr advantage and 0.2 V VF penalty
BAT54CDual common-cathode Schottky; VF = 0.33 V typ, but C = 10 pF min - no trr specificationLower VF benefits clamping, but higher capacitance degrades RF bandwidth beyond 300 MHzPreferred for low-VF DC clamping; unsuitable for >500 MHz signal switching due to capacitance

Compared with 1SS119-14TA-E, the 1N4148W-7-F trades speed for broader availability, while BAT54C offers lower forward drop at the expense of RF bandwidth-making 1SS119-14TA-E optimal for sub-1 GHz high-fidelity switching where both trr and C are simultaneously constrained.

Availability

1SS119-14TA-E is available at Aetrix Electronics and suitable for RF detector circuits, digital logic clamping, and high-speed sampling gates requiring stable component supply, consistent MHD package form factor, and guaranteed trr ≤ 3.5 ns performance.

Supply support for 1SS119-14TA-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and connectivity solutions for automotive, industrial, and IoT applications.

The 1SS119-14TA-E belongs to Renesas' legacy high-speed switching diode product line, engineered specifically for RF and digital interface signal integrity where low capacitance and nanosecond-scale recovery are mandatory.

FAQ

What is the maximum reverse recovery time specified for the 1SS119-14TA-E?

The 1SS119-14TA-E has a maximum reverse recovery time (trr) of 3.5 ns, measured under standardized conditions: IF = 10 mA, VR = 6 V, RL = 50 Ω. This value is guaranteed across the full operating temperature range and is critical for maintaining signal fidelity in high-frequency switching applications. The 1SS119-14TA-E achieves this performance via its silicon epitaxial planar structure and optimized doping profile.

Does the 1SS119-14TA-E have a cathode band, and how is it identified?

Yes, the 1SS119-14TA-E features a light blue cathode band on the MHD glass package, positioned adjacent to pin 1. Pin 1 is the cathode terminal, and pin 2 is the anode. This marking is essential for correct orientation during PCB assembly and ensures proper polarity in clamping, detection, and switching configurations. The 1SS119-14TA-E's cathode identification complies with JEITA standard GRZZ0002ZC-A.

What is the junction capacitance of the 1SS119-14TA-E, and under what conditions is it measured?

The 1SS119-14TA-E exhibits a maximum junction capacitance (C) of 3.0 pF, measured at VR = 1 V and f = 1 MHz. This low capacitance is intrinsic to its epitaxial planar construction and enables minimal signal attenuation in RF paths up to 1 GHz. The 1SS119-14TA-E's C parameter is tightly controlled and verified per Renesas' Rev. 3.00 test methodology.

Can the 1SS119-14TA-E be used in surface-mount reflow processes?

Yes, the 1SS119-14TA-E's MHD glass package is qualified for standard lead-free reflow soldering profiles, including peak temperatures up to 260°C for ≤10 seconds. Its hermetic seal and thermal stability (Tj = −65°C to +175°C) ensure reliability through multiple thermal cycles. The 1SS119-14TA-E is commonly placed using pick-and-place machines compatible with 2.0 mm diameter components.

What is the maximum average forward current rating for the 1SS119-14TA-E?

The 1SS119-14TA-E is rated for an average forward current (IO) of 150 mA at Ta = 25°C. Derating is required above ambient temperatures per the thermal resistance curve in the datasheet, but the device maintains full IO capability up to 75°C ambient when mounted on standard FR-4 with minimal copper area. This rating supports sustained operation in logic interface and detector circuits where the 1SS119-14TA-E is routinely deployed.

1SS119-14TA-E Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Technology:
-
Voltage - DC Reverse (Vr) (Max):
-
Current - Average Rectified (Io):
-
Voltage - Forward (Vf) (Max) @ If:
-
Speed:
-
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
-
Capacitance @ Vr, F:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-
Operating Temperature - Junction:
-

1SS119-14TA-E FAQ

1.How can I place an order for 1SS119-14TA-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 1SS119-14TA-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1SS119-14TA-E reliable?

The price and inventory of 1SS119-14TA-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1SS119-14TA-E is usually 5 days.

3.What payment methods are accepted for 1SS119-14TA-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1SS119-14TA-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1SS119-14TA-E?

1SS119-14TA-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1SS119-14TA-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1SS119-14TA-E?

For technical support, including 1SS119-14TA-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1SS119-14TA-E requirements.

6.How does Aetrix verify that 1SS119-14TA-E is sourced from the original manufacturer or authorized distributors?

All 1SS119-14TA-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1SS119-14TA-E meets industry standards.

7.What is the process for return or replacement of 1SS119-14TA-E?

All 1SS119-14TA-E units undergo pre-shipment inspection (PSI). If there is an issue with 1SS119-14TA-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1SS119-14TA-E part is unused and in its original packaging.

Return procedure for 1SS119-14TA-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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