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Renesas 1SS119-25-E
- Part No.:
- 1SS119-25-E
- Manufacturer:
- Renesas
- Category:
- Single Diodes
- Package:
- -
- Datasheet:
-
1SS119-25-E.pdf
- Description:
- DIODE FOR HIGH SPEED SWITCHING
- Quantity:
- Payment:
- Shipping:
Inventory:46,500
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Product details
Overview
1SS119-25-E from Renesas is a silicon epitaxial planar switching diode in MHD glass package, rated for 30 V reverse voltage, 150 mA average rectified current, and featuring 3.0 pF max capacitance and 3.5 ns max reverse recovery time. It serves as a high-speed signal path switch in RF front-end and data line protection circuits.
For engineers reviewing the 1SS119-25-E datasheet, 1SS119-25-E pinout, 1SS119-25-E application, or 1SS119-25-E equivalent, key selection criteria include low-junction-capacitance switching performance, fast trr under 10 mA/6 V test conditions, thermal stability up to 175°C junction temperature, and compatibility with automated placement due to its 2.0 mm diameter MHD package.
Technical Context
This diode employs an epitaxial planar structure optimized for minimal charge storage and rapid minority-carrier sweep-out. Its low 3.0 pF capacitance at 1 V reverse bias and sub-4 ns trr enable clean edge fidelity in >100 MHz digital and RF signal routing applications.
The MHD glass package provides hermetic sealing and stable parasitic behavior across −65°C to +175°C storage range. Cathode identification via light-blue band ensures unambiguous polarity during manual or automated assembly.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VR (Reverse Voltage) | 30 V - Maximum DC blocking capability without breakdown in continuous operation |
| trr (Reverse Recovery Time) | 3.5 ns max - Enables reliable switching at frequencies up to ~100 MHz with minimal tail current |
| C (Capacitance) | 3.0 pF max at VR = 1 V, f = 1 MHz - Minimizes signal loading in high-frequency AC coupling paths |
| IF(AV) (Avg. Rectified Current) | 150 mA - Sustained forward conduction capacity for logic-level signal gating or clamping |
| Tj (Junction Temp) | 175°C - Supports operation in thermally constrained environments such as sealed RF modules |
| VF (Forward Voltage) | 0.8 V max at IF = 10 mA - Low conduction loss preserves signal amplitude integrity in low-voltage data lines |
Pinout & Package
MHD (Mini-High-Density) glass package: cylindrical, 2.0 mm diameter × 2.4 mm length, light-blue cathode band marking, mass ≈ 0.084 g, JEITA code GRZZ0002ZC-A.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Connected to reference or return path; polarity marker (light-blue band) adjacent to this pin |
| 2 | Anode | Input or signal source side; forward current enters here during conduction |
Key Features
| Feature | Design Value |
|---|---|
| Low junction capacitance | 3.0 pF max enables minimal signal distortion in 50 Ω RF interfaces up to 500 MHz |
| Fast reverse recovery | 3.5 ns max supports clean transitions in pulse-width modulated control signals and clock distribution |
| Hermetic glass package | MHD construction ensures long-term parameter stability in humid or chemically aggressive environments |
| High junction temperature rating | 175°C Tj allows use in proximity to power amplifiers or in sealed industrial enclosures without derating |
Applications
| RF Signal Switching | High-Speed Data Line Clamping |
|---|---|
Use Scenario: Bidirectional RF antenna switching in 2.4 GHz ISM-band transceivers. IC Role / Device Role / Timing Role: Passive signal path selector controlled by GPIO-driven bias networks. Use Value: 3.0 pF capacitance and 3.5 ns trr preserve insertion loss and group delay flatness across 2–2.5 GHz band. | Use Scenario: ESD protection and overvoltage clamping on USB 2.0 D+/D− lines. IC Role / Device Role / Timing Role: Fast-turn-on shunt clamp activated during transient events. Use Value: Sub-4 ns response limits voltage overshoot to <1.2× VDD, meeting IEC 61000-4-2 Level 4 requirements. |
| Digital Logic Level Translation | Sample-and-Hold Circuit Diode Bridge |
Use Scenario: Isolating mixed-voltage domains (e.g., 3.3 V MCU driving 5 V peripheral). IC Role / Device Role / Timing Role: Unidirectional level-shifting element in open-drain interface configurations. Use Value: 0.8 V VF at 10 mA ensures minimal voltage drop while maintaining timing margins for 10 MHz toggle rates. | Use Scenario: Precision analog sampling front-end in 12-bit ADC systems. IC Role / Device Role / Timing Role: Low-charge-injection switch in track/hold amplifier feedback path. Use Value: Low stored charge (Qrr < 12 pC) prevents droop-induced sampling error beyond ±0.5 LSB. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4148W | Higher C = 4.0 pF max; trr = 4.0 ns max; SOD-123 package (larger footprint) | Less suitable for >300 MHz RF routing due to higher capacitance and slower recovery | Prefer when board space allows larger package and cost is primary constraint |
| BAT54C | Lower VR = 30 V same, but dual-common-cathode configuration; C = 10 pF typical at 0 V | Not single-diode drop-in; intended for dual-channel clamping, not discrete switching | Select only when dual-diode topology matches schematic and layout |
Compared with 1SS119-25-E, 1N4148W trades slightly higher capacitance and slower recovery for broader availability and lower unit cost, while BAT54C offers dual functionality at the expense of single-diode performance-making 1SS119-25-E optimal where RF-grade speed and compact MHD form factor are critical.
Availability
1SS119-25-E is available at Aetrix Electronics and suitable for RF front-end switching, high-speed data line clamping, and precision analog sampling applications requiring stable component supply and consistent parametric performance across production lots.
Supply support for 1SS119-25-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog power, and SoC solutions for automotive, industrial, and IoT systems.
The 1SS119-25-E belongs to Renesas' legacy high-speed discrete diode family, engineered specifically for RF and high-frequency digital signal integrity where low capacitance and nanosecond-scale switching are mandatory.
FAQ
What is the maximum reverse voltage rating for the 1SS119-25-E?
The 1SS119-25-E has a peak reverse voltage (VRM) rating of 35 V and a continuous reverse voltage (VR) rating of 30 V at Ta = 25°C. Exceeding 30 V in steady-state operation risks irreversible breakdown; design margin should maintain VR ≤ 24 V for reliability in variable-temperature environments. The 1SS119-25-E datasheet specifies these limits under standard test conditions and must be observed in all circuit implementations.
Does the 1SS119-25-E have a specified forward voltage at 1 mA?
No, the 1SS119-25-E datasheet specifies forward voltage only at IF = 10 mA (VF ≤ 0.8 V). At 1 mA, VF is not characterized or guaranteed; extrapolation from the typical IV curve suggests ~0.55–0.65 V, but system designs requiring precise low-current conduction must validate empirically. The 1SS119-25-E is optimized for 10–100 mA operating ranges, not microampere-level biasing.
Is the 1SS119-25-E RoHS compliant?
Yes, the 1SS119-25-E complies with RoHS Directive 2011/65/EU as confirmed by Renesas' material declarations dated 2015 onward. Lead content is below 0.1 wt%, and all six restricted substances meet threshold limits. The 1SS119-25-E MHD package contains no intentionally added halogenated flame retardants or phthalates, aligning with IPC-1752A Class B reporting standards.
Can the 1SS119-25-E be used in place of a Schottky diode?
The 1SS119-25-E is a silicon PN junction diode-not a Schottky-and exhibits higher VF (~0.8 V vs. ~0.3 V) and slower trr than most Schottkys. It should not replace Schottky diodes in low-VF or ultrafast (<2 ns) applications. However, the 1SS119-25-E outperforms many Schottkys in low-capacitance RF roles due to its 3.0 pF rating, making it a purpose-fit alternative where capacitance matters more than forward drop.
What is the thermal resistance junction-to-ambient for the 1SS119-25-E?
The 1SS119-25-E does not specify RθJA in its datasheet. As a glass-encapsulated MHD device with no thermal pad or heatsink interface, its effective RθJA is estimated at ~400°C/W under still-air conditions on FR-4 with minimal copper area. For thermal design, rely on the absolute maximum junction temperature (Tj = 175°C) and derate power dissipation (Pd = 250 mW) based on measured board temperature near the 1SS119-25-E location.
1SS119-25-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- -
- Voltage - DC Reverse (Vr) (Max):
- -
- Current - Average Rectified (Io):
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Speed:
- -
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- -
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Operating Temperature - Junction:
- -
1SS119-25-E FAQ
1.How can I place an order for 1SS119-25-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 1SS119-25-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1SS119-25-E reliable?
The price and inventory of 1SS119-25-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1SS119-25-E is usually 5 days.
3.What payment methods are accepted for 1SS119-25-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1SS119-25-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1SS119-25-E?
1SS119-25-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1SS119-25-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1SS119-25-E?
For technical support, including 1SS119-25-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1SS119-25-E requirements.
6.How does Aetrix verify that 1SS119-25-E is sourced from the original manufacturer or authorized distributors?
All 1SS119-25-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1SS119-25-E meets industry standards.
7.What is the process for return or replacement of 1SS119-25-E?
All 1SS119-25-E units undergo pre-shipment inspection (PSI). If there is an issue with 1SS119-25-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1SS119-25-E part is unused and in its original packaging.
Return procedure for 1SS119-25-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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