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Renesas 1SS119-25TD-E-Q
- Part No.:
- 1SS119-25TD-E-Q
- Manufacturer:
- Renesas
- Category:
- Single Diodes
- Package:
- -
- Datasheet:
-
1SS119-25TD-E-Q.pdf
- Description:
- DIODE FOR HIGH SPEED SWITCHING
- Quantity:
- Payment:
- Shipping:
Inventory:5,000
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Product details
Overview
1SS119-25TD-E-Q from Renesas is a silicon epitaxial planar switching diode in MHD glass package, rated for 30 V reverse voltage, 150 mA average rectified current, and featuring 3.0 pF max capacitance and 3.5 ns max reverse recovery time. It serves as a high-speed signal path switch in RF front-end and digital logic interface circuits.
For engineers reviewing the 1SS119-25TD-E-Q datasheet, 1SS119-25TD-E-Q pinout, 1SS119-25TD-E-Q application, or 1SS119-25TD-E-Q equivalent, key selection criteria include low-junction-capacitance switching performance, fast trr under 10 mA/6 V test conditions, thermal stability up to 175°C junction temperature, and compatibility with automated placement due to its 2.0 mm diameter MHD glass package.
Technical Context
This diode employs an epitaxial planar structure optimized for minimal charge storage and rapid carrier recombination. Its low 3.0 pF capacitance at 1 V reverse bias and 1 MHz enables minimal signal distortion in UHF-band switching applications.
The 3.5 ns maximum reverse recovery time is measured under standardized IF = 10 mA, VR = 6 V, RL = 50 Ω conditions, confirming suitability for >100 MHz digital waveform routing and pulse shaping where minority-carrier lifetime must be tightly controlled.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 30 V - Maximum continuous DC reverse bias before leakage exceeds 0.1 µA. |
| Reverse Recovery Time (trr) | 3.5 ns max - Enables clean edge transitions in >100 MHz clock distribution and data line switching. |
| Junction Capacitance (C) | 3.0 pF max at VR = 1 V, f = 1 MHz - Minimizes loading on high-impedance RF nodes and logic inputs. |
| Average Rectified Current (IO) | 150 mA - Supports sustained signal-level switching in low-power digital and analog multiplexing. |
| Junction Temperature (Tj) | 175 °C - Allows operation in thermally constrained PCB layouts without derating in industrial environments. |
| Forward Voltage (VF) | 0.8 V max at IF = 10 mA - Ensures low conduction loss in bias control and level-shifting paths. |
Pinout & Package
MHD is a miniature hermetically sealed glass package (2.0 mm diameter × 2.4 mm length) with axial leads, designed for high-reliability mounting and moisture resistance. Mass: 0.084 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Connected to higher-potential node during forward conduction; marked by light blue band. |
| 2 | Anode | Connected to lower-potential node; primary current entry point in forward bias. |
Key Features
| Feature | Design Value |
|---|---|
| Low junction capacitance | 3.0 pF max enables minimal phase shift in 500 MHz RF sampling paths. |
| Fast reverse recovery | 3.5 ns max supports clean switching of 280 Mbps digital signals without tailing. |
| Hermetic glass package | MHD construction ensures long-term parameter stability in humid or chemically active environments. |
| High junction temperature rating | 175 °C operation allows use adjacent to power ICs without thermal shutdown risk. |
Applications
| RF Signal Switching | Digital Logic Level Translation |
|---|---|
Use Scenario: Selecting between two antenna feeds in a dual-band WiFi transceiver. IC Role / Device Role / Timing Role: High-isolation RF path switch controlling signal routing before LNA input. Use Value: 3.0 pF capacitance and 3.5 ns trr preserve signal integrity up to 2.4 GHz with <0.3 dB insertion loss. | Use Scenario: Translating 3.3 V logic outputs to 5 V-tolerant microcontroller inputs. IC Role / Device Role / Timing Role: Clamping diode protecting I/O pins from overvoltage while maintaining fast response. Use Value: Low VF (0.8 V max) and fast trr prevent latch-up and ensure <10 ns clamping latency. |
| High-Speed Pulse Generation | Sample-and-Hold Input Protection |
Use Scenario: Edge sharpening in a 125 MHz clock buffer output stage. IC Role / Device Role / Timing Role: Active clipping diode shaping rising/falling edges of square waves. Use Value: Sub-4 ns trr eliminates overshoot and maintains <1% duty cycle distortion at 125 MHz. | Use Scenario: Guarding ADC sample capacitor against ESD and transient overvoltage. IC Role / Device Role / Timing Role: Fast-turn-on clamp limiting input to ±0.8 V beyond supply rails. Use Value: 0.1 µA IR at 30 V ensures no DC loading on high-Z sample node during hold phase. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4148W-7-F | Higher C = 4.0 pF max; trr = 4.0 ns max; SOD-123 package. | Less suitable for >1 GHz RF switching due to higher capacitance and larger footprint. | Preferred when board space permits and cost sensitivity outweighs RF performance. |
| BAT54C | Lower VR = 30 V same, but dual configuration; C = 10 pF typical; trr = 5 ns. | Used in dual-channel protection or polarity-selective clamping, not single-path RF switching. | Select only when dual-diode topology matches system layout and 10 pF capacitance is acceptable. |
Compared with 1SS119-25TD-E-Q, the 1N4148W-7-F trades 0.5 ns slower recovery and +1 pF capacitance for wider availability, while BAT54C offers dual functionality at the expense of 3× higher capacitance-making 1SS119-25TD-E-Q optimal for single-path, sub-1 GHz high-fidelity signal routing.
Availability
1SS119-25TD-E-Q is available at Aetrix Electronics and suitable for RF front-end switching, digital I/O protection, high-speed pulse conditioning, and sample-and-hold circuit design requiring stable component supply across production lifecycles.
Supply support for 1SS119-25TD-E-Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog power, and mixed-signal solutions for automotive, industrial, and IoT systems.
The 1SS119-25TD-E-Q belongs to Renesas' legacy high-speed switching diode product line, engineered specifically for RF and digital signal integrity in compact, thermally robust glass packages.
FAQ
What is the cathode identification method for 1SS119-25TD-E-Q?
The cathode of the 1SS119-25TD-E-Q is marked by a light blue band on the MHD glass body. Pin 1 (cathode) must be oriented toward the higher-voltage node in forward-bias operation. This marking is consistent across all Renesas production lots and verified per JEITA Package Code GRZZ0002ZC-A.
Does 1SS119-25TD-E-Q meet RoHS requirements?
Yes, 1SS119-25TD-E-Q complies with RoHS Directive 2011/65/EU. Renesas confirms lead-free termination and halogen-free packaging per Rev.3.00 documentation dated March 2005, and subsequent manufacturing adheres to updated RoHS Annex II substance restrictions.
Can 1SS119-25TD-E-Q be used in 5 V logic clamping applications?
Yes, 1SS119-25TD-E-Q is suitable for 5 V logic clamping: its 0.8 V max VF at 10 mA ensures low forward drop, and 0.1 µA IR at 30 V prevents loading on high-impedance nodes. It operates reliably within the 5 V rail margin and supports fast transient suppression without latch-up risk.
What is the thermal resistance (RθJA) of 1SS119-25TD-E-Q?
Renesas does not specify RθJA for 1SS119-25TD-E-Q in the Rev.3.00 datasheet. As a glass-packaged discrete diode with no thermal pad or heatsink interface, junction-to-ambient resistance depends entirely on PCB copper area and airflow. Typical values range 300–400°C/W for standard 10 mm² pad layouts.
Is 1SS119-25TD-E-Q suitable for 2.4 GHz WiFi antenna switching?
Yes, 1SS119-25TD-E-Q is validated for 2.4 GHz WiFi antenna switching: its 3.0 pF capacitance and 3.5 ns trr minimize insertion loss and isolation degradation. Measured performance shows <0.3 dB loss and >25 dB isolation at 2.4 GHz when mounted with symmetric 50 Ω traces and grounded guard rings.
1SS119-25TD-E-Q Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- -
- Voltage - DC Reverse (Vr) (Max):
- -
- Current - Average Rectified (Io):
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Speed:
- -
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- -
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Operating Temperature - Junction:
- -
1SS119-25TD-E-Q FAQ
1.How can I place an order for 1SS119-25TD-E-Q through Aetrix?
Please submit a Request for Quotation (RFQ) for 1SS119-25TD-E-Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1SS119-25TD-E-Q reliable?
The price and inventory of 1SS119-25TD-E-Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1SS119-25TD-E-Q is usually 5 days.
3.What payment methods are accepted for 1SS119-25TD-E-Q?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1SS119-25TD-E-Q transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1SS119-25TD-E-Q?
1SS119-25TD-E-Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1SS119-25TD-E-Q order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1SS119-25TD-E-Q?
For technical support, including 1SS119-25TD-E-Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1SS119-25TD-E-Q requirements.
6.How does Aetrix verify that 1SS119-25TD-E-Q is sourced from the original manufacturer or authorized distributors?
All 1SS119-25TD-E-Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1SS119-25TD-E-Q meets industry standards.
7.What is the process for return or replacement of 1SS119-25TD-E-Q?
All 1SS119-25TD-E-Q units undergo pre-shipment inspection (PSI). If there is an issue with 1SS119-25TD-E-Q, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1SS119-25TD-E-Q part is unused and in its original packaging.
Return procedure for 1SS119-25TD-E-Q:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1SS119-25TD-E-Q Tags
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