Renesas 1SS120-91

Overview

1SS120-91 from Renesas is a silicon epitaxial planar switching diode in a miniature glass MHD package, rated for 70 V peak reverse voltage, 150 mA average rectified current, and featuring 3.0 pF max capacitance and 3.5 ns max reverse recovery time. It serves as a high-speed signal path switch in RF detector, sample-and-hold, and fast logic interface circuits.

For engineers reviewing the 1SS120-91 datasheet, 1SS120-91 pinout, 1SS120-91 application, or 1SS120-91 equivalent, key selection criteria include low-junction-capacitance performance at 1 MHz, sub-4 ns trr under defined IF/VR/RL conditions, and compatibility with automated placement due to its 2.0 mm diameter MHD glass package.

Technical Context

This diode employs an epitaxial planar structure optimized for minimal charge storage and rapid carrier sweep-out, enabling reliable operation in high-frequency switching up to ~500 MHz. Its low 3.0 pF capacitance at VR = 1 V and f = 1 MHz directly supports impedance matching in 50 Ω RF front-ends.

The 3.5 ns maximum reverse recovery time (trr) is measured under standardized conditions (IF = 10 mA, VR = 6 V, RL = 50 Ω), confirming suitability for pulse shaping and demodulation where timing fidelity is critical. Junction temperature rating of 175°C supports use in thermally constrained environments.

Key Specifications

Pinout & Package

1SS120-91 uses the MHD glass package (JEITA code GRZZ0002ZC-A), a 2.0 mm diameter cylindrical hermetically sealed envelope with axial leads and light-blue cathode band marking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed switching diode applications.

Compared with 1N4148W and BAT54C, the 1SS120-91 delivers superior high-frequency switching fidelity due to its uniquely low 3.0 pF capacitance and guaranteed ≤3.5 ns trr in a 2.0 mm glass package-critical for RF detector linearity and sampling accuracy where parasitic effects dominate.

Availability

1SS120-91 is available at Aetrix Electronics and suitable for RF detector circuits, high-speed logic interfaces, sample-and-hold amplifiers, and test equipment signal paths requiring stable component supply and long-term obsolescence management.

Supply support for 1SS120-91 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and connectivity solutions for automotive, industrial, and IoT applications.

The 1SS120-91 belongs to Renesas' legacy high-speed switching diode product line, engineered specifically for RF and precision analog signal-path applications demanding low capacitance, fast recovery, and hermetic reliability.

FAQ

What is the maximum reverse recovery time (trr) specification for the 1SS120-91?

The 1SS120-91 has a maximum reverse recovery time of 3.5 ns, tested under the condition IF = 10 mA, VR = 6 V, and RL = 50 Ω. This value is guaranteed across the full operating temperature range and is critical for maintaining signal integrity in high-frequency switching applications such as RF detection and sampling circuits using the 1SS120-91.

Is the 1SS120-91 suitable for RF applications above 100 MHz?

Yes, the 1SS120-91 is specifically designed for RF applications up to approximately 500 MHz. Its 3.0 pF maximum junction capacitance at 1 MHz and 3.5 ns trr enable low signal distortion and precise timing in detector, mixer, and antenna switch circuits. Performance data in the official Renesas datasheet confirms stable C–VR and IR–VR characteristics essential for RF use of the 1SS120-91.

What package type does the 1SS120-91 use, and how is polarity identified?

The 1SS120-91 uses the MHD glass package (JEITA code GRZZ0002ZC-A), a 2.0 mm diameter hermetically sealed axial-leaded device. Polarity is indicated by a light-blue cathode band adjacent to pin 1 (cathode); pin 2 is the anode. This marking is visible under standard optical inspection and compatible with automated optical alignment systems used with the 1SS120-91.

What is the junction temperature rating for the 1SS120-91?

The 1SS120-91 has a maximum junction temperature (Tj) rating of 175°C, with a storage temperature range of −65°C to +175°C. This wide thermal capability supports operation in automotive under-hood, industrial motor drive, and outdoor wireless infrastructure environments where ambient temperatures exceed 100°C-making the 1SS120-91 robust for demanding deployments.

How does the 1SS120-91 compare to standard 1N4148-series diodes in switching performance?

The 1SS120-91 offers tighter trr control (≤3.5 ns vs. 4 ns typical for 1N4148W) and lower capacitance (3.0 pF vs. ~4 pF), resulting in improved high-frequency linearity and reduced feedthrough in RF and sampling applications. While both are silicon switching diodes, the 1SS120-91's MHD glass package and Renesas-optimized epitaxial process deliver measurable advantages for precision signal-path use of the 1SS120-91.