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Renesas 1SS123(0)-T1B-A
- Part No.:
- 1SS123(0)-T1B-A
- Manufacturer:
- Renesas
- Category:
- Single Diodes
- Package:
- -
- Datasheet:
-
1SS123(0)-T1B-A.pdf
- Description:
- DIODE FOR HIGH SPEED SWITCHING
- Quantity:
- Payment:
- Shipping:
Inventory:137,311
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Product details
Overview
1SS123(0)-T1B-A from Renesas Electronics is a high-speed switching diode in a small SOD-323 (SC-90) surface-mount package, rated for 100 V peak reverse voltage, 200 mA average forward current, and 4 ns reverse recovery time. It serves as a signal-level rectifier or clamp in portable audio amplifiers, USB interface protection circuits, and low-power logic level translation stages.
For engineers reviewing the 1SS123(0)-T1B-A datasheet, 1SS123(0)-T1B-A pinout, 1SS123(0)-T1B-A application, or 1SS123(0)-T1B-A equivalent, key selection criteria include its fast recovery performance, low forward voltage drop at 100 mA, tight leakage specification at 100 V, and compatibility with automated reflow assembly processes for compact consumer electronics designs.
Technical Context
This diode employs a planar epitaxial silicon structure optimized for rapid carrier recombination, enabling reliable operation in 1–10 MHz signal routing and transient suppression tasks. Its junction capacitance of 2.0 pF at 0 V and low series resistance support minimal signal distortion in RF detector and sample-and-hold front-end applications.
The device operates within −55 °C to +150 °C ambient range and meets JEDEC JESD22-A108 reliability standards for temperature cycling and humidity exposure. It is RoHS-compliant and halogen-free per Renesas standard product requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Repetitive Reverse Voltage (VRWM) | 100 V - supports clamping or rectification in 3.3 V to 24 V logic and power rail interfaces without breakdown |
| Average Rectified Forward Current (IF(AV)) | 200 mA - sufficient for signal path switching and low-duty-cycle pulse handling in portable devices |
| Reverse Recovery Time (trr) | 4 ns - enables clean edge transitions in digital signal routing up to ~100 MHz clock domains |
| Forward Voltage (VF) | 1.0 V @ 100 mA - minimizes power loss and self-heating in battery-powered sensor nodes |
| Reverse Leakage Current (IR) | 100 nA @ 100 V - ensures stable DC bias integrity in high-impedance analog front-ends |
| Junction Capacitance (Cj) | 2.0 pF @ 0 V - preserves bandwidth in RF detector and ESD protection shunt paths |
Pinout & Package
Package: SOD-323 (SC-90), 2-terminal surface-mount plastic case, 1.7 mm × 1.25 mm footprint, 0.9 mm height, gull-wing leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (A) | Forward current entry point | Connected to lower-potential node in clamping or rectifier configuration; requires trace routing for thermal relief in high-repetition-rate pulse loads |
| Cathode (K) | Forward current exit / reverse blocking terminal | Bonded to PCB ground or reference rail in ESD protection; polarity marking visible via cathode band on package top surface |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-fast recovery (trr = 4 ns) | Enables use in high-frequency signal demodulation and logic-level translation without tail current interference |
| Low forward voltage (1.0 V @ 100 mA) | Reduces conduction loss by >15% versus standard 1N4148 equivalents in 3.3 V supply rails |
| Small SOD-323 footprint | Supports board space reduction in multi-channel audio codecs and miniaturized USB-C port protectors |
| High reliability grade (Standard) | Qualified for use in consumer audio equipment, office peripherals, and industrial HMI panels per Renesas quality classification |
Applications
| USB 2.0 Data Line Protection | Portable Audio Amplifier Bias Clamping |
|---|---|
Use Scenario: Protecting D+ and D− lines from ESD transients and overvoltage during hot-plug events in mobile accessories. IC Role / Device Role: Fast-switching clamp diode placed between data line and VDD/GND rails to divert surge current. Use Value: 4 ns trr prevents data corruption during 480 Mbps signaling; 2.0 pF Cj avoids signal integrity degradation. | Use Scenario: Stabilizing quiescent bias points in Class AB headphone amplifier output stages under varying load conditions. IC Role / Device Role: DC-level clamp preventing crossover distortion during low-amplitude signal swing. Use Value: 1.0 V VF ensures minimal offset shift across temperature; 100 nA IR maintains precision bias stability. |
| Logic-Level Translation Interface | RF Detector Input Stage |
Use Scenario: Translating 1.8 V GPIO signals to 3.3 V domain in microcontroller-based sensor hubs. IC Role / Device Role: Passive level-shifting diode in series with pull-up resistor network. Use Value: Low VF and 200 mA IF(AV) allow robust operation across wide duty cycles without thermal derating. | Use Scenario: Demodulating amplitude-modulated RF carriers in 868 MHz ISM-band receiver front-ends. IC Role / Device Role: Zero-bias envelope detector diode operating in square-law region. Use Value: 2.0 pF Cj and low series resistance enable >20 dBm sensitivity at 10 kHz baseband bandwidth. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1SS184(TPH3,F) | Lower VF (0.95 V @ 100 mA), same trr (4 ns), identical SOD-323 package | Slightly improved efficiency in battery-critical bias networks; otherwise functionally interchangeable | Preferred where sub-100 mV VF reduction improves system runtime margin |
| RB520S-30T1G | Higher IF(AV) (300 mA), slower trr (6 ns), same package | Better suited for higher-current clamp duties but less ideal for >50 MHz signal integrity | Select when surge current handling exceeds 200 mA and speed < 50 MHz is acceptable |
Compared with 1SS123(0)-T1B-A, the 1SS184 offers marginal forward voltage advantage without trade-offs, while RB520S-30T1G trades speed for higher current capacity-making each suitable for distinct design priorities in portable electronics signal conditioning.
Availability
1SS123(0)-T1B-A is available at Aetrix Electronics and suitable for USB interface protection, portable audio bias control, and logic-level translation requiring stable component supply across production volumes from prototype to mass manufacturing.
Supply support for 1SS123(0)-T1B-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor manufacturer headquartered in Japan, specializing in microcontrollers, analog and power devices, and system-on-chip solutions for automotive, industrial, and consumer markets.
The 1SS123(0)-T1B-A belongs to Renesas' standard high-speed switching diode product line, designed specifically for signal integrity preservation and low-loss clamping in space-constrained, battery-operated electronics.
FAQ
What is the maximum junction temperature rating for the 1SS123(0)-T1B-A?
The 1SS123(0)-T1B-A has a maximum junction temperature (Tj) of +150 °C, validated per JEDEC JESD22-A102 thermal stress testing. This allows continuous operation in compact enclosures with limited airflow, provided PCB copper area and solder mask openings meet Renesas-recommended thermal pad layout guidelines for the SOD-323 package. Derating begins above +125 °C ambient.
Is the 1SS123(0)-T1B-A RoHS-compliant and lead-free?
Yes, the 1SS123(0)-T1B-A is fully RoHS-compliant and lead-free, meeting EU Directive 2011/65/EU and Renesas' internal halogen-free material specifications. The device uses matte tin-plated terminals and green molding compound, with full compliance documentation available through Renesas' product change notification (PCN) archives for 1SS123(0)-T1B-A.
Can the 1SS123(0)-T1B-A be used in place of a 1N4148 in high-frequency circuits?
Yes, the 1SS123(0)-T1B-A can replace 1N4148 in high-frequency applications due to its faster 4 ns reverse recovery time (versus 4–8 ns for 1N4148), lower 2.0 pF junction capacitance, and tighter leakage spec. However, its 100 V VRWM is lower than 1N4148's 100 V rating-so verify reverse voltage margins before substitution in legacy 1N4148 designs using 1SS123(0)-T1B-A.
What is the typical forward voltage of the 1SS123(0)-T1B-A at 10 mA?
The typical forward voltage of the 1SS123(0)-T1B-A at 10 mA and 25 °C is 0.85 V, measured per Renesas' standard test conditions. This value supports accurate voltage-drop modeling in low-current bias networks and precision clamping circuits where millivolt-level offsets affect system gain or offset calibration-critical in portable audio amplifier designs using 1SS123(0)-T1B-A.
Does the 1SS123(0)-T1B-A have a specified storage temperature range?
Yes, the 1SS123(0)-T1B-A has a specified storage temperature range of −55 °C to +150 °C, matching its operating junction temperature limits. This allows safe long-term storage in uncontrolled warehouse environments and compatibility with standard reflow soldering profiles-including peak temperatures up to +260 °C for 10 seconds-without parametric shift or mechanical damage to the SOD-323 package of 1SS123(0)-T1B-A.
1SS123(0)-T1B-A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- -
- Voltage - DC Reverse (Vr) (Max):
- -
- Current - Average Rectified (Io):
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Speed:
- -
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- -
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Operating Temperature - Junction:
- -
1SS123(0)-T1B-A FAQ
1.How can I place an order for 1SS123(0)-T1B-A through Aetrix?
Please submit a Request for Quotation (RFQ) for 1SS123(0)-T1B-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1SS123(0)-T1B-A reliable?
The price and inventory of 1SS123(0)-T1B-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1SS123(0)-T1B-A is usually 5 days.
3.What payment methods are accepted for 1SS123(0)-T1B-A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1SS123(0)-T1B-A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1SS123(0)-T1B-A?
1SS123(0)-T1B-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1SS123(0)-T1B-A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1SS123(0)-T1B-A?
For technical support, including 1SS123(0)-T1B-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1SS123(0)-T1B-A requirements.
6.How does Aetrix verify that 1SS123(0)-T1B-A is sourced from the original manufacturer or authorized distributors?
All 1SS123(0)-T1B-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1SS123(0)-T1B-A meets industry standards.
7.What is the process for return or replacement of 1SS123(0)-T1B-A?
All 1SS123(0)-T1B-A units undergo pre-shipment inspection (PSI). If there is an issue with 1SS123(0)-T1B-A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1SS123(0)-T1B-A part is unused and in its original packaging.
Return procedure for 1SS123(0)-T1B-A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1SS123(0)-T1B-A Tags
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1N4148WX-TP
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1N4148TR
onsemi
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MMSD4148T1G
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BAS16HT1G
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1N914BWT
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BAS21LT1G
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LL4148
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MMSD914T1G
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BAV21W-7-F
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