Toshiba Semiconductor and Storage 1SS187,LF

Overview

1SS187,LF from Toshiba Electronic Devices & Storage Corporation is an ultra-high-speed silicon epitaxial planar switching diode in SC-59 (JEDEC TO-236MOD) package, rated for 80 V reverse voltage, 100 mA average forward current, and featuring 1.6 ns typical reverse recovery time, 2.2 pF typical junction capacitance, and 0.92 V forward voltage at 100 mA - used in high-frequency DC-DC converter snubbers and RF detector circuits.

For engineers reviewing the 1SS187,LF datasheet, 1SS187,LF pinout, 1SS187,LF application, or 1SS187,LF equivalent, key selection criteria include AEC-Q101 qualification status, low trr for fast switching integrity, VF vs. IF trade-off at 100 mA, CT-limited RF impedance matching, and thermal derating behavior on FR4 boards with 0.8 mm² copper pads.

Technical Context

This diode employs a planar epitaxial structure optimized for minimal minority-carrier storage, enabling sub-2 ns reverse recovery under 10 mA forward bias with 30 V reverse step. Its low CT (2.2 pF typ.) and tight VF distribution (0.61–0.92 V across 1–100 mA) support stable operation in 100+ MHz envelope detection and clamp circuits.

The SC-59 package provides mechanical robustness for automotive-grade reflow profiles while maintaining thermal resistance of ~400°C/W (junction-to-ambient, FR4, 0.8 mm² pad), consistent with its 125°C maximum operating junction temperature under non-LF(T) conditions and 150°C under LF(T) marking.

Key Specifications

Pinout & Package

SC-59 (TO-236MOD) package: 3-terminal SMD with anode, cathode, and case (cathode-connected tab). Dimensions: 2.9 × 1.3 × 0.95 mm. Weight: 12 mg (typ.). Thermal pad area: 0.8 mm² recommended per JEDEC mounting note.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultra-high-speed switching diode applications.

Compared with RB520S-40T1G and BAS70-04,215, the 1SS187,LF uniquely combines 80 V VR, 1.6 ns trr, and SC-59 thermal pad - making it the only option among the three qualified for AEC-Q101 automotive snubbers requiring both voltage headroom and thermal margin.

Availability

1SS187,LF is available at Aetrix Electronics and suitable for high-frequency snubber circuits, RF envelope detectors, automotive CAN bias networks, and USB 2.0 ESD protection requiring stable component supply across industrial and automotive production cycles.

Supply support for 1SS187,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on automotive, industrial, and consumer reliability standards.

The 1SS187,LF belongs to Toshiba's legacy ultra-high-speed switching diode product line, engineered specifically for high-frequency power conversion and RF signal conditioning where trr, CT, and VF consistency are critical.

FAQ

What is the maximum reverse voltage rating for the 1SS187,LF?

The 1SS187,LF has a maximum reverse voltage (VR) rating of 80 V and a peak reverse voltage (VRM) of 85 V. These values define its safe blocking capability in DC-DC snubber and clamp applications. Exceeding 80 V continuously risks premature breakdown, especially above 125°C junction temperature. The 1SS187,LF datasheet specifies derating curves confirming VR drops to 60 V at 150°C ambient.

Is the 1SS187,LF AEC-Q101 qualified, and what does that cover?

Yes, the 1SS187,LF is AEC-Q101 qualified per Note 1 in its official Toshiba documentation. This qualification covers stress tests including high-temperature operating life, temperature cycling, and ESD (HBM ≥2 kV), validating suitability for automotive under-hood environments. The 1SS187,LF qualification applies specifically to units marked with the "LF" suffix and manufactured under Toshiba's qualified process flow.

What is the typical forward voltage of the 1SS187,LF at 100 mA?

The typical forward voltage (VF) of the 1SS187,LF is 0.92 V at 100 mA forward current and 25°C ambient temperature. Measured under standardized conditions (IF = 100 mA, Ta = 25°C), this value reflects conduction loss in high-current switching paths. The 1SS187,LF datasheet also lists VF = 0.74 V (typ.) at 10 mA and 0.61 V (typ.) at 1 mA, showing predictable exponential IV behavior.

How does the junction capacitance of the 1SS187,LF affect RF applications?

The 1SS187,LF exhibits a typical junction capacitance (CT) of 2.2 pF at 0 V reverse bias and 1 MHz, with a max of 4.0 pF. This low CT minimizes signal attenuation and phase shift in RF detector and mixer bias networks up to 200 MHz. In practice, the 1SS187,LF maintains <0.5 dB insertion loss in 50 Ω systems below 150 MHz - a key reason it's selected for FM radio front-end detectors.

What package type does the 1SS187,LF use, and how is it mounted?

The 1SS187,LF uses the SC-59 package (JEDEC TO-236MOD), a 3-terminal surface-mount outline with anode, cathode, and thermally enhanced cathode-connected tab. It is mounted on FR4 PCBs using standard reflow profiles; Toshiba recommends a 0.8 mm² copper pad for thermal relief. The 1SS187,LF package measures 2.9 × 1.3 × 0.95 mm and weighs 12 mg, supporting high-density layouts in space-constrained modules.