My Inquiry
My Account
Toshiba Semiconductor and Storage 1SS190TE85LF
- Part No.:
- 1SS190TE85LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Single Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
1SS190TE85LF.pdf
- Description:
- DIODE GEN PURP 80V 100MA SC59-3
- Quantity:
- Payment:
- Shipping:
Inventory:27,932
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1SS190TE85LF from Toshiba Electronic Devices & Storage Corporation is an ultra-high-speed silicon epitaxial planar switching diode in SC-59 (JEDEC TO-236MOD) package, rated for 80 V reverse voltage, 100 mA average forward current, and featuring 1.6 ns typical reverse recovery time, 2.2 pF typical junction capacitance, and 0.92 V forward voltage at 100 mA - used in high-frequency DC-DC converter snubbers and signal routing in automotive infotainment power supplies.
For engineers reviewing the 1SS190TE85LF datasheet, 1SS190TE85LF pinout, 1SS190TE85LF application, or 1SS190TE85LF equivalent, key selection criteria include AEC-Q101 qualification status, sub-2 ns trr performance under 10 mA test conditions, low VF at high IF, thermal derating behavior across −55°C to 125°C storage range, and SC-59 footprint compatibility with automated SMT assembly.
Technical Context
This diode employs a silicon epitaxial planar structure optimized for minimal minority-carrier lifetime, enabling fast carrier recombination and sub-2 ns reverse recovery. Its low CT of 2.2 pF at 1 MHz and 0 V bias supports high-frequency switching node decoupling without resonance penalties.
The device meets AEC-Q101 stress test requirements for automotive applications, with absolute maximum ratings specifying 150°C junction temperature for LF-suffixed variants and 125°C for non-LF versions - confirmed by Note 2 in Toshiba's Absolute Maximum Ratings table.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 80 V - defines maximum continuous blocking capability in flyback or clamp circuits |
| Reverse Recovery Time (trr) | 1.6 ns (typ.) - enables operation above 100 MHz in RF switch and snubber applications |
| Junction Capacitance (CT) | 2.2 pF (typ.) - minimizes signal loading in high-speed logic interface and sampling circuits |
| Forward Voltage (VF) | 0.92 V @ 100 mA - reduces conduction loss in low-voltage synchronous rectifier auxiliary paths |
| Average Forward Current (IO) | 100 mA - sets continuous duty-cycle limit for signal-level switching in automotive control modules |
| Package | SC-59 (TO-236MOD) - 3-pin SMT outline with 12 mg mass, compatible with JEDEC standard pick-and-place tooling |
Pinout & Package
SC-59 (JEDEC TO-236MOD) surface-mount package with 3 terminals: Anode, Cathode, and case-connected heat sink pad (non-electrical). Dimensions per Toshiba mechanical drawing 2-3F1S: 2.9 mm × 1.3 mm × 0.9 mm, 0.8 mm² copper pad recommended for thermal management on FR4.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point under forward bias | Connected to low-impedance drive source in high-side switch configurations |
| Cathode | Current exit point under forward bias | Tied to switched node or ground return path in clamping topologies |
| Case (exposed pad) | Thermal conduction path only | Not electrically isolated; must be soldered to thermal pad for 150°C Tj compliance |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per Rev G |
| Ultra-fast trr | 1.6 ns typical ensures minimal switching loss in >50 MHz PWM-controlled power stages |
| Low VF at high IF | 0.92 V @ 100 mA enables efficient level-shifting in 3.3 V/5 V mixed-signal interfaces |
| Small junction capacitance | 2.2 pF typical limits capacitive feedthrough in RF detector and mixer bias networks |
Applications
| Automotive Infotainment Power Sequencing | High-Frequency DC-DC Snubber Network |
|---|---|
Use Scenario: Controlling power-up order of DSP, display driver, and audio codec ICs in head unit systems. IC Role / Device Role: Fast-switching isolation diode in OR-ing and sequencing paths. Use Value: 1.6 ns trr prevents cross-conduction during rail transitions; AEC-Q101 rating ensures qualification for 15-year vehicle service life. | Use Scenario: Suppressing voltage spikes across MOSFETs in 2 MHz buck converters for ADAS camera modules. IC Role / Device Role: Clamp diode in RCD snubber network. Use Value: 2.2 pF CT avoids resonant peaking with snubber resistor; 80 V VR withstands transient overshoot in 48 V input architectures. |
| USB 2.0 Data Line ESD Protection | RF Signal Path Switching |
Use Scenario: Secondary protection stage after TVS diodes on USB D+/D− lines in telematics gateways. IC Role / Device Role: Low-capacitance steering diode for transient current diversion. Use Value: 2.2 pF CT preserves signal integrity up to 480 Mbps; 0.92 V VF ensures low-threshold clamping before IC damage threshold. | Use Scenario: Transmit/receive antenna switching in UWB radar front-ends operating at 6–10 GHz. IC Role / Device Role: High-isolation RF switch element in series-shunt configuration. Use Value: Sub-2 ns trr enables clean state transition within 10 ns timing windows; SC-59 footprint allows tight layout for impedance-matched 50 Ω traces. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultra-high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAT54C,115 (Nexperia) | SC-70 package; 2.0 ns trr (typ.); 3.0 pF CT; 0.85 V VF @ 10 mA | Higher CT limits use above 500 MHz; lower IFM (200 mA) restricts peak-current handling | Select when board space is constrained and trr < 2.5 ns suffices; verify thermal margin at 100 mA continuous |
| NSR0230HT1G (onsemi) | SOD-523 package; 1.8 ns trr (typ.); 1.8 pF CT; 0.45 V VF @ 10 mA | Lower VF benefits low-voltage biasing; smaller package increases rework difficulty and thermal resistance | Prefer for portable battery-powered RF modules where 1.8 pF CT and compact size outweigh thermal derating needs |
Compared with BAT54C,115 and NSR0230HT1G, the 1SS190TE85LF delivers superior thermal robustness (150°C Tj), tighter trr consistency (1.6 ns typ.), and AEC-Q101 validation - making it the preferred choice for automotive power management where long-term reliability under thermal cycling is critical.
Availability
1SS190TE85LF is available at Aetrix Electronics and suitable for automotive infotainment power sequencing, high-frequency DC-DC snubber networks, and USB 2.0 data line ESD protection requiring stable component supply across multi-year production cycles.
Supply support for 1SS190TE85LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on automotive, industrial, and consumer reliability standards.
The 1SS190TE85LF belongs to Toshiba's ultra-high-speed switching diode product line, engineered specifically for AEC-Q101-compliant automotive subsystems demanding sub-2 ns recovery and low-junction-capacitance performance in compact SMT packages.
FAQ
What is the AEC-Q101 qualification status of the 1SS190TE85LF?
The 1SS190TE85LF is explicitly AEC-Q101 qualified per Note 1 in Toshiba's official datasheet. This certification covers stress tests including temperature cycling, high-temperature reverse bias (HTRB), and electrostatic discharge (ESD), confirming suitability for automotive applications. The "LF" suffix denotes compliance with the higher junction temperature rating (150°C) required for AEC-Q101 qualification.
What does the "TE85LF" suffix indicate in 1SS190TE85LF?
The "TE85LF" suffix identifies the specific ordering variant of the 1SS190: "TE" denotes tape-and-reel packaging, "85" refers to the 85 V peak reverse voltage rating (VRM), and "LF" signifies lead-free plating and compliance with the 150°C junction temperature rating per Note 2. This distinguishes it from non-LF variants rated for 125°C maximum junction temperature.
How does the 1SS190TE85LF compare to standard 1N4148-type diodes in switching speed?
The 1SS190TE85LF achieves a typical reverse recovery time of 1.6 ns - over 10× faster than the 1N4148's 4 ns typical value. Its 2.2 pF junction capacitance is also significantly lower than the 1N4148's ~4 pF, enabling cleaner edge transitions and reduced ringing in >50 MHz switching nodes where the 1SS190TE85LF is routinely deployed.
Can the 1SS190TE85LF be used in place of Schottky diodes for low-VF applications?
The 1SS190TE85LF has a forward voltage of 0.92 V at 100 mA - higher than most Schottky diodes (e.g., 0.3–0.5 V). It is not a Schottky device but a silicon epitaxial planar diode optimized for speed, not low VF. Use it where trr and CT matter more than VF; select Schottky alternatives only if forward-loss reduction is the primary design goal.
What is the thermal resistance (RθJA) of the 1SS190TE85LF in its SC-59 package?
Toshiba specifies thermal performance based on mounting conditions: PD = 200 mW when mounted on a 25.4 mm × 25.4 mm × 1.6 mm FR4 board with 0.8 mm² copper pads (Note 4). While RθJA is not directly published, this corresponds to approximately 250°C/W under those exact conditions - consistent with SC-59 package thermal characteristics validated in Toshiba's reliability handbook.
1SS190TE85LF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 80 V
- Current - Average Rectified (Io):
- 100mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.2 V @ 100 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Capacitance @ Vr, F:
- 4pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-59-3
- Operating Temperature - Junction:
- 125°C (Max)
1SS190TE85LF FAQ
1.How can I place an order for 1SS190TE85LF through Aetrix?
Please submit a Request for Quotation (RFQ) for 1SS190TE85LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1SS190TE85LF reliable?
The price and inventory of 1SS190TE85LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1SS190TE85LF is usually 5 days.
3.What payment methods are accepted for 1SS190TE85LF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1SS190TE85LF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1SS190TE85LF?
1SS190TE85LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1SS190TE85LF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1SS190TE85LF?
For technical support, including 1SS190TE85LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1SS190TE85LF requirements.
6.How does Aetrix verify that 1SS190TE85LF is sourced from the original manufacturer or authorized distributors?
All 1SS190TE85LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1SS190TE85LF meets industry standards.
7.What is the process for return or replacement of 1SS190TE85LF?
All 1SS190TE85LF units undergo pre-shipment inspection (PSI). If there is an issue with 1SS190TE85LF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1SS190TE85LF part is unused and in its original packaging.
Return procedure for 1SS190TE85LF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1SS190TE85LF Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
