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Toshiba Semiconductor and Storage 1SS196(TE85L,F)
- Part No.:
- 1SS196(TE85L,F)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Single Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
1SS196(TE85L,F).pdf
- Description:
- DIODE GEN PURP 80V 100MA SC59-3
- Quantity:
- Payment:
- Shipping:
Inventory:2
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Product details
Overview
1SS196(TE85L,F) from Toshiba Electronic Devices & Storage Corporation is an ultra-high-speed silicon epitaxial planar switching diode in SC-59 (JEDEC TO-236MOD) package, rated for 80 V reverse voltage, 100 mA average forward current, and featuring 1.6 ns typical reverse recovery time, 0.9 pF typical junction capacitance, and 0.90 V forward voltage at 100 mA - deployed in automotive signal routing and high-frequency pulse shaping circuits.
For engineers reviewing the 1SS196(TE85L,F) datasheet, 1SS196(TE85L,F) pinout, 1SS196(TE85L,F) application, or 1SS196(TE85L,F) equivalent, key selection criteria include AEC-Q101 qualification status, trr ≤ 4.0 ns maximum, VF consistency across 1–100 mA, CT < 3.0 pF at 1 MHz, and thermal derating compliance for FR4-mounted operation.
Technical Context
This diode employs a silicon epitaxial planar structure optimized for minimal minority-carrier storage, enabling sub-2 ns reverse recovery. Its low CT (0.9 pF typ.) and controlled doping profile support stable high-frequency switching up to ~500 MHz in clipping and clamping topologies.
The SC-59 package provides mechanical robustness and thermal performance suitable for AEC-Q101-compliant automotive modules. Absolute maximum ratings distinguish between LF(T)-suffixed variants (150°C Tj, 200 mW PD on FR4) and non-LF(T) versions (125°C Tj, 150 mW PD), with 1SS196(TE85L,F) falling under the LF(T) category per marking and datasheet note alignment.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VR (Reverse Voltage) | 80 V - defines maximum DC or peak AC blocking capability in series-switched paths |
| trr (Reverse Recovery Time) | 1.6 ns typ., 4.0 ns max - enables clean edge transitions in >200 MHz digital signal conditioning |
| CT (Junction Capacitance) | 0.9 pF typ. at 0 V, 1 MHz - minimizes capacitive loading in RF detector and sampling gate inputs |
| VF (Forward Voltage) | 0.90 V typ. at IF = 100 mA - reduces conduction loss in low-voltage logic-level clamping networks |
| IO (Average Forward Current) | 100 mA - supports continuous duty-cycle operation in signal-level switching without heatsinking |
| AEC-Q101 Qualified | Yes - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing |
Pinout & Package
Package: SC-59 (JEDEC TO-236MOD), 3-pin surface-mount plastic package with 12 mg typical weight; lead-free (LF) and RoHS-compliant per TE85L,F suffix.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Pin 1) | Forward current entry point | Connected to higher-potential node in clamp/signal-steering configuration |
| Cathode (Pin 2) | Forward current exit / reverse-blocking terminal | Bonded to PCB ground or reference rail; carries full reverse voltage stress |
| Collector/Case (Pin 3) | Internal chip substrate connection | Electrically tied to cathode in standard diode configuration; no isolation |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-fast switching speed | trr ≤ 4.0 ns ensures minimal timing skew in high-speed data line protection |
| Low-junction capacitance | CT ≤ 3.0 pF maintains signal integrity above 300 MHz in RF sampling applications |
| AEC-Q101 qualification | Validated for automotive powertrain and body electronics under extended temperature and life stress |
| Low forward voltage drop | VF ≤ 1.20 V at 100 mA enables efficient clamping in 3.3 V and 5 V logic interfaces |
Applications
| Automotive CAN Bus Signal Clamping | High-Speed Logic-Level Translation |
|---|---|
Use Scenario: Protecting CAN_H/CAN_L lines from ESD transients and bus overvoltage in vehicle ECUs. IC Role / Device Role / Timing Role: Fast-clamping diode placed between differential pair and ground, conducting within 1.6 ns of overvoltage onset. Use Value: Prevents latch-up in CAN transceivers by limiting voltage excursion to < 1.2 V above rail using 0.9 pF low-capacitance path. | Use Scenario: Level-shifting TTL-to-CMOS signals in FPGA I/O banks operating at 100+ Mbps. IC Role / Device Role / Timing Role: Passive bidirectional voltage translator leveraging matched VF characteristics across 1–10 mA range. Use Value: Enables glitch-free crossing between 3.3 V and 5 V domains with < 0.5 ns added propagation delay due to sub-2 ns trr. |
| RF Detector Input Protection | Digital Pulse Edge Sharpening |
Use Scenario: Shielding precision RF detector IC inputs from antenna-coupled surges in wireless sensor nodes. IC Role / Device Role / Timing Role: Low-CT shunt limiter that remains transparent below 0.6 V and clamps above 30 V with < 0.1 μA leakage. Use Value: Preserves detector sensitivity (NF < 3 dB) while surviving ±15 kV ESD per IEC 61000-4-2 via 0.9 pF minimal parasitic loading. | Use Scenario: Converting slow-rising microcontroller GPIO outputs into crisp clock-like edges for ADC sampling triggers. IC Role / Device Role / Timing Role: Series-connected switch that removes Miller capacitance-induced rounding via rapid turn-off (trr = 1.6 ns). Use Value: Reduces edge jitter to < 15 ps RMS in 50 Ω systems, supporting 1 GSPS sampling synchronization. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultra-high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAT54C,215 (Nexperia) | SC-70 package; trr = 5.0 ns max; VF = 0.83 V @ 10 mA; CT = 10 pF @ 0 V | Higher CT limits use above 100 MHz; suited for general-purpose logic clamping, not RF detection | Select when board space allows larger footprint and RF performance is not required |
| NSR0230HT1G (onsemi) | SOD-523 package; trr = 2.5 ns max; VF = 0.45 V @ 100 mA; CT = 1.5 pF @ 0 V | Lower VF improves efficiency but higher trr increases timing uncertainty in >250 MHz edge control | Prefer for battery-powered logic clamping where conduction loss dominates over timing fidelity |
Compared with BAT54C,215 and NSR0230HT1G, the 1SS196(TE85L,F) uniquely balances sub-2 ns trr, sub-1 pF CT, and AEC-Q101 qualification - making it the only choice among the three for automotive-grade RF sampling and CAN bus transient suppression where both speed and reliability are concurrently mandated.
Availability
1SS196(TE85L,F) is available at Aetrix Electronics and suitable for automotive ECU design, high-speed test equipment signal conditioning, and industrial IoT RF front-end protection requiring stable component supply and long-term lifecycle assurance.
Supply support for 1SS196(TE85L,F) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on automotive, industrial, and consumer reliability standards.
The 1SS196(TE85L,F) belongs to Toshiba's legacy ultra-high-speed switching diode product line, engineered specifically for AEC-Q101-compliant signal integrity preservation in automotive communication buses and high-frequency analog front-ends.
FAQ
What is the maximum reverse recovery time specified for 1SS196(TE85L,F)?
The maximum reverse recovery time (trr) for 1SS196(TE85L,F) is 4.0 ns under test conditions of IF = 10 mA, as confirmed in Toshiba's official electrical characteristics table. This value is critical for timing-critical applications such as high-speed pulse shaping and RF sampling, where delays beyond 4 ns may cause signal distortion or sampling error. The 1SS196(TE85L,F) consistently achieves 1.6 ns typical performance, making it suitable for designs targeting sub-2 ns switching fidelity.
Is 1SS196(TE85L,F) qualified for automotive applications?
Yes, 1SS196(TE85L,F) is AEC-Q101 qualified per Toshiba's documentation, with qualification noted explicitly in the features list and supported by thermal and reliability testing aligned to automotive stress profiles. This qualification covers temperature cycling, high-temperature reverse bias, and ESD robustness - confirming suitability for under-hood and body-control module use. The 1SS196(TE85L,F) meets these requirements as a discrete diode, not as part of an integrated assembly.
What does the "TE85L,F" suffix indicate for 1SS196(TE85L,F)?
"TE85L,F" denotes Toshiba's tape-and-reel packaging format (TE), lead-free plating (L), RoHS compliance (F), and the specific variant optimized for 85 V peak reverse voltage rating. The "L" also correlates to Note 2 in Toshiba's absolute maximum ratings, confirming 150°C junction temperature and 200 mW power dissipation capability when mounted on FR4. This suffix directly identifies the 1SS196(TE85L,F) as the lead-free, automotive-qualified version of the base 1SS196 device.
How does the junction capacitance of 1SS196(TE85L,F) affect RF circuit performance?
The 1SS196(TE85L,F) exhibits 0.9 pF typical junction capacitance at 0 V and 1 MHz, with a maximum of 3.0 pF - a value low enough to avoid significant signal attenuation or phase shift in 50 Ω RF paths up to 500 MHz. In detector or mixer input stages, this CT ensures minimal loading of high-impedance nodes, preserving noise figure and dynamic range. Because the 1SS196(TE85L,F) maintains this low CT across its operating voltage range, it delivers consistent RF performance without tuning dependencies.
Can 1SS196(TE85L,F) be used in place of standard small-signal diodes like 1N4148?
No - while both are switching diodes, the 1SS196(TE85L,F) is optimized for ultra-high-speed operation (trr ≤ 4.0 ns vs. 1N4148's 4–8 ns) and lower capacitance (0.9 pF vs. ~4 pF), making it unsuitable as a direct replacement where slower recovery or higher CT is intentionally used for filtering or snubbing. Substituting 1SS196(TE85L,F) for 1N4148 may cause unintended ringing or oscillation in low-frequency clamp circuits. The 1SS196(TE85L,F) should only replace 1N4148 when verified trr and CT requirements align with the target application's timing and bandwidth needs.
1SS196(TE85L,F) Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 80 V
- Current - Average Rectified (Io):
- 100mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.2 V @ 100 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Capacitance @ Vr, F:
- 3pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-59-3
- Operating Temperature - Junction:
- 125°C (Max)
1SS196(TE85L,F) FAQ
1.How can I place an order for 1SS196(TE85L,F) through Aetrix?
Please submit a Request for Quotation (RFQ) for 1SS196(TE85L,F) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1SS196(TE85L,F) reliable?
The price and inventory of 1SS196(TE85L,F) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1SS196(TE85L,F) is usually 5 days.
3.What payment methods are accepted for 1SS196(TE85L,F)?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1SS196(TE85L,F) transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1SS196(TE85L,F)?
1SS196(TE85L,F) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1SS196(TE85L,F) order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1SS196(TE85L,F)?
For technical support, including 1SS196(TE85L,F) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1SS196(TE85L,F) requirements.
6.How does Aetrix verify that 1SS196(TE85L,F) is sourced from the original manufacturer or authorized distributors?
All 1SS196(TE85L,F) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1SS196(TE85L,F) meets industry standards.
7.What is the process for return or replacement of 1SS196(TE85L,F)?
All 1SS196(TE85L,F) units undergo pre-shipment inspection (PSI). If there is an issue with 1SS196(TE85L,F), returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1SS196(TE85L,F) part is unused and in its original packaging.
Return procedure for 1SS196(TE85L,F):
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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