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Toshiba Semiconductor and Storage 1SS307(TE85L,F)
- Part No.:
- 1SS307(TE85L,F)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Single Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
1SS307(TE85L,F).pdf
- Description:
- DIODE GEN PURP 30V 100MA S-MINI
- Quantity:
- Payment:
- Shipping:
Inventory:5,993
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Product details
Overview
1SS307(TE85L,F) from Toshiba Electronic Devices & Storage Corporation is a silicon epitaxial planar general-purpose rectifier diode optimized for low-voltage, high-speed switching in signal and power management circuits; features VF = 1.0 V (typ.) at IF = 100 mA, IR = 10 nA (max.) at VR = 30 V, CT = 3.0 pF (typ.) at 1 MHz, VRM = 35 V, and IO = 100 mA - used in DC-DC converter feedback paths and low-power sensor interface protection.
For engineers reviewing the 1SS307(TE85L,F) datasheet, 1SS307(TE85L,F) pinout, 1SS307(TE85L,F) application, or 1SS307(TE85L,F) equivalent, key selection criteria include forward voltage drop under 100 mA load, sub-10 nA reverse leakage at 30 V bias, junction capacitance below 6 pF, thermal derating on FR4 PCBs, and SC−59 package compatibility with automated SMT assembly.
Technical Context
This discrete silicon diode employs an epitaxial planar structure to achieve fast recovery characteristics without soft-recovery tail, enabling use in high-frequency rectification up to several MHz. Its low CT and low IR support stable operation in RF detector and clamping circuits where parasitic capacitance and leakage-induced offset must be minimized.
The device operates within a junction temperature range of −55°C to 150°C (Note 1), with power dissipation rated at 200 mW on standard FR4 (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 0.8 mm² × 3); thermal performance is defined by two derating curves corresponding to LF(T)-suffixed variants versus non-LF(T) versions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRM | 35 V peak reverse voltage - defines maximum transient overvoltage tolerance in clamp or flyback snubber applications |
| VF @ 100 mA | 1.0 V typical - enables <100 mW conduction loss in 100 mA signal-path rectification |
| IR @ 30 V | 10 nA maximum - ensures negligible leakage current in high-impedance bias networks and precision sample-hold circuits |
| CT @ 0 V / 1 MHz | 3.0 pF typical - supports >50 MHz small-signal bandwidth in RF detector and mixer applications |
| IO | 100 mA average forward current - suitable for continuous-duty low-power supply rail conditioning and logic-level translation |
| Package | SC−59 (JEITA) / TO−236MOD (JEDEC) - 3-pin SMT package with 0.95 mm pitch, compatible with standard 0805 footprint variants |
Pinout & Package
SC−59 package: molded plastic case with three terminals in single-row configuration; compact 2.9 mm × 1.3 mm × 0.9 mm outline, 12 mg typical weight, marked "2-3F1S".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to higher-potential node in rectifier or clamp configuration; requires trace routing for thermal relief under 100 mA DC |
| Cathode | Forward current exit / reverse blocking terminal | Typically tied to ground or reference rail; cathode marking (band) visible on top surface for orientation verification |
| Case / Exposed Pad | Non-electrical mechanical anchor | No internal connection; serves only as thermal and mechanical mounting surface - not electrically isolated or conductive |
Key Features
| Feature | Design Value |
|---|---|
| Low forward voltage | 1.0 V typ. at 100 mA enables <100 mW conduction loss in always-on bias chains |
| Ultra-low reverse leakage | 10 nA max. at 30 V prevents >1 mV error in 100 MΩ feedback networks |
| Minimal junction capacitance | 3.0 pF typ. preserves signal integrity in 1–100 MHz detector and sampling circuits |
| Thermally robust rating | 150°C max junction temperature supports operation in sealed industrial enclosures without forced cooling |
Applications
| Signal-Level Rectification | Low-Power Supply Clamping |
|---|---|
Use Scenario: Demodulating AM signals in battery-powered IoT sensor nodes with microamp-level quiescent current budgets. IC Role / Device Role: Signal-path envelope detector diode operating in sub-100 µA forward region with minimal distortion. Use Value: 3.0 pF CT and 10 nA IR preserve RF signal fidelity and prevent baseline drift in high-Z analog front-ends. | Use Scenario: Protecting 3.3 V microcontroller I/O pins against ESD transients and overvoltage coupling from adjacent switching rails. IC Role / Device Role: Bidirectional clamping diode connected between I/O line and VDD/GND rails. Use Value: 1.0 V VF ensures clamping threshold remains below 3.6 V, preventing latch-up while limiting forward conduction loss. |
| DC-DC Feedback Path | Logic-Level Translation |
Use Scenario: Providing isolated voltage feedback from secondary-side synchronous rectifier outputs in isolated flyback converters. IC Role / Device Role: High-impedance sensing diode in optocoupler-coupled feedback loop. Use Value: 10 nA IR avoids loading 100 kΩ+ feedback dividers, maintaining ±0.5% output regulation accuracy. | Use Scenario: Level-shifting 1.8 V logic outputs to interface with 3.3 V peripherals in portable medical devices. IC Role / Device Role: Passive forward-biased diode translating logic HIGH by fixed VF drop. Use Value: Stable 1.0 V VF enables predictable 1.3 V HIGH level at receiver, independent of process variation or temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar general-purpose rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| RB520S-40T1G | VF = 0.33 V (typ.) at 100 mA; IR = 100 nA (max.) at 30 V; SC-79 package | Lower VF improves efficiency in high-duty-cycle paths but higher IR may degrade precision bias networks | Select when minimizing conduction loss outweighs leakage sensitivity - e.g., power rail OR-ing |
| BAS16H,115 | VF = 1.25 V (max.) at 100 mA; IR = 500 nA (max.) at 100 V; SOT-23 package | Higher VRM (100 V) suits wider input ranges; larger IR limits use in ultra-low-current analog paths | Select when system requires >35 V reverse standoff and leakage <500 nA is acceptable |
Compared with RB520S-40T1G and BAS16H,115, the 1SS307(TE85L,F) delivers the optimal balance of low VF (1.0 V), ultra-low IR (10 nA), and moderate VRM (35 V) for space-constrained, low-leakage signal-path rectification where thermal budget is limited to 200 mW on FR4.
Availability
1SS307(TE85L,F) is available at Aetrix Electronics and suitable for DC-DC feedback networks, RF detector circuits, low-power I/O clamping, and logic-level translation requiring stable component supply across automotive infotainment, industrial sensor modules, and portable medical electronics.
Supply support for 1SS307(TE85L,F) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, miniaturization, and energy efficiency.
The 1SS307(TE85L,F) belongs to Toshiba's legacy silicon rectifier diode product line, engineered for cost-sensitive, high-volume applications demanding consistent low-VF and low-IR performance in compact SMT packages since commercial launch in 1988.
FAQ
What is the maximum reverse voltage rating for the 1SS307(TE85L,F)?
The 1SS307(TE85L,F) has a maximum peak reverse voltage (VRM) of 35 V and a continuous reverse voltage (VR) rating of 30 V. These ratings apply at Ta = 25°C and define safe operating limits for clamping and rectification functions. Exceeding VRM risks avalanche breakdown; sustained operation above VR accelerates degradation per Toshiba's reliability guidelines.
Does the 1SS307(TE85L,F) have a specified reverse recovery time (trr)?
No, the 1SS307(TE85L,F) datasheet does not specify reverse recovery time (trr). As a general-purpose silicon epitaxial planar diode, it is not characterized for fast-switching applications requiring trr < 100 ns. For timing-critical switching, engineers should verify waveform behavior empirically or select a diode explicitly rated for fast recovery, such as the 1SS355 or BAS21.
Is the 1SS307(TE85L,F) RoHS compliant?
Yes, the 1SS307(TE85L,F) is RoHS compliant. Toshiba confirms compliance with Directive 2011/65/EU (RoHS 2) for this part number, including lead-free terminations and halogen-free molding compound. Full compliance documentation, including test reports, is available via Toshiba's official semiconductor portal or authorized distributors.
What is the thermal resistance junction-to-ambient (RθJA) for the 1SS307(TE85L,F)?
The 1SS307(TE85L,F) does not specify RθJA directly. Instead, Toshiba provides derated power dissipation curves: 200 mW at Ta = 25°C on FR4 (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 0.8 mm² × 3). From this, effective RθJA is approximately 625°C/W - calculated as (150°C − 25°C) / 0.2 W - applicable only under those exact board conditions.
Can the 1SS307(TE85L,F) be used in place of the 1N4148WS?
The 1SS307(TE85L,F) is not a direct replacement for the 1N4148WS. While both are SMT general-purpose diodes, the 1N4148WS specifies trr ≤ 4 ns and VRM = 100 V, whereas the 1SS307(TE85L,F) emphasizes low IR and low CT but lacks trr characterization and has lower VRM (35 V). Substitution requires validation of leakage, capacitance, and reverse voltage margins in the target circuit.
1SS307(TE85L,F) Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 30 V
- Current - Average Rectified (Io):
- 100mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.3 V @ 100 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 10 nA @ 30 V
- Capacitance @ Vr, F:
- 6pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- S-Mini
- Operating Temperature - Junction:
- 125°C (Max)
1SS307(TE85L,F) FAQ
1.How can I place an order for 1SS307(TE85L,F) through Aetrix?
Please submit a Request for Quotation (RFQ) for 1SS307(TE85L,F) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1SS307(TE85L,F) reliable?
The price and inventory of 1SS307(TE85L,F) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1SS307(TE85L,F) is usually 5 days.
3.What payment methods are accepted for 1SS307(TE85L,F)?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1SS307(TE85L,F) transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1SS307(TE85L,F)?
1SS307(TE85L,F) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1SS307(TE85L,F) order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1SS307(TE85L,F)?
For technical support, including 1SS307(TE85L,F) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1SS307(TE85L,F) requirements.
6.How does Aetrix verify that 1SS307(TE85L,F) is sourced from the original manufacturer or authorized distributors?
All 1SS307(TE85L,F) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1SS307(TE85L,F) meets industry standards.
7.What is the process for return or replacement of 1SS307(TE85L,F)?
All 1SS307(TE85L,F) units undergo pre-shipment inspection (PSI). If there is an issue with 1SS307(TE85L,F), returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1SS307(TE85L,F) part is unused and in its original packaging.
Return procedure for 1SS307(TE85L,F):
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1SS307(TE85L,F) Tags
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