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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Toshiba Semiconductor and Storage 1SS322(TE85L,F)

Name: 1SS322(TE85L,F)
Brand: Toshiba Semiconductor and Storage
SKU: 1SS322(TE85L,F)
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 1SS322(TE85L,F)

Manufacturer:: Toshiba Semiconductor and Storage

Category:: Single Diodes

Package:: SC-70, SOT-323

Datasheet:: 1SS322(TE85L,F).pdf

Description:: DIODE SCHOTTKY 40V 100MA USM

Quantity:: RFQ Add To RFQ list

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Product details

Overview

1SS322(TE85L,F) from TOSHIBA is a silicon epitaxial Schottky barrier diode optimized for low-voltage, high-speed switching applications, featuring VF(3) = 0.54 V (typ.) at IF = 100 mA, IR ≤ 5 μA at VR = 40 V, and CT = 18–25 pF at f = 1 MHz, commonly used in portable DC-DC converter feedback paths and signal clamping circuits.

For engineers reviewing the 1SS322(TE85L,F) datasheet, 1SS322(TE85L,F) pinout, 1SS322(TE85L,F) application, or 1SS322(TE85L,F) equivalent, key selection criteria include forward voltage drop under load, reverse leakage at rated voltage, junction capacitance for high-frequency operation, thermal limits up to 125°C, and SC−70 package compatibility with space-constrained PCB layouts.

Technical Context

The 1SS322(TE85L,F) employs a planar Schottky barrier structure on n-type silicon epitaxial layer, enabling fast recovery (trr not specified but inherent to Schottky architecture) and low conduction loss. Its low VF across 1–100 mA range supports efficient operation in battery-powered logic-level switching and voltage translation.

Designed for surface-mount use in SC−70 (SOT-323) package, the device operates within −55°C to +125°C storage and junction temperature ranges, with absolute maximum VRM = 45 V and IFM = 300 mA, making it suitable for transient-tolerant, low-power signal routing rather than power rectification.

Key Specifications

Parameter	Value and Actual Design Meaning
VF (3)	0.54 V typ. at IF = 100 mA - enables <0.6 V forward drop in high-current digital switching nodes
IR	≤5 μA max. at VR = 40 V - ensures minimal leakage in bias and clamp circuits
CT	18–25 pF at VR = 0 V, f = 1 MHz - supports >100 MHz signal integrity in RF detector or mixer applications
VRM	45 V peak reverse voltage - allows safe operation with 40 V DC blocking margin
P_D	100 mW - limits continuous dissipation to match SC−70 thermal capability
T_j max	125°C - defines upper thermal operating limit for reliability in sealed enclosures

Pinout & Package

Package: SC−70 (JEITA: SC−70, JEDEC: SOT-323), 3-pin surface-mount plastic package with 1.4 mm × 1.25 mm footprint and 0.95 mm height; marking "1SS322" on top surface.

Pin/Terminal	Circuit Role	Design Meaning
Anode (Pin 1)	Forward current entry	Connected to higher-potential node in clamping, OR-ing, or level-shifting paths
Cathode (Pin 2)	Forward current exit / reverse voltage reference	Typically tied to ground or lower-potential rail; defines polarity-sensitive placement
Not connected (Pin 3)	Internal die pad / mechanical support	No electrical connection; serves thermal and mechanical anchoring function only

Key Features

Feature	Design Value
Low VF across wide current range	0.28 V (IF = 1 mA) to 0.54 V (IF = 100 mA) - reduces conduction loss in low-voltage logic interfaces
Ultra-low IR at rated VR	≤5 μA at VR = 40 V - preserves signal integrity in high-impedance sensing and sample-hold circuits
Small-footprint SC−70 package	1.4 × 1.25 mm outline - enables dense layout in wearables and IoT sensor nodes
High-speed switching capability	Schottky barrier construction with no minority-carrier storage - supports sub-nanosecond turn-off in pulse shaping

Applications

USB Data Line Clamping	DC-DC Converter Feedback Diode
Use Scenario: Protecting USB 2.0 D+/D− lines from ESD transients while maintaining signal fidelity. IC Role / Device Role / Timing Role: Low-capacitance Schottky clamp diode placed between data line and VBUS or ground. Use Value: CT = 18–25 pF minimizes signal distortion; VF < 0.6 V ensures clamping threshold stays below USB receiver thresholds.	Use Scenario: Providing fast, low-loss path for feedback current in synchronous buck converter optocoupler-isolated loops. IC Role / Device Role / Timing Role: High-speed switching diode in secondary-side error amplifier output path. Use Value: Low VF and IR enable stable regulation at light loads; SC−70 footprint fits tight opto-coupler spacing.
Logic-Level Voltage Translation	RF Detector Input Protection
Use Scenario: Level-shifting between 1.8 V and 3.3 V I/O domains in FPGA or microcontroller GPIO banks. IC Role / Device Role / Timing Role: Bidirectional Schottky diode used in passive translator configuration. Use Value: VF ≈ 0.36 V at 10 mA allows ~1.4 V headroom for 1.8 V logic, preserving noise margin and timing margins.	Use Scenario: Front-end protection of microwave detector diodes in 2.4 GHz Wi-Fi front-end modules. IC Role / Device Role / Timing Role: Low-C_T, low-V_F shunt limiter before sensitive detector input. Use Value: 25 pF max capacitance avoids resonant detuning at 2.4 GHz; 5 μA IR prevents DC offset drift in detector bias path.

USB Data Line Clamping

DC-DC Converter Feedback Diode

Use Scenario: Protecting USB 2.0 D+/D− lines from ESD transients while maintaining signal fidelity.

IC Role / Device Role / Timing Role: Low-capacitance Schottky clamp diode placed between data line and VBUS or ground.

Use Value: CT = 18–25 pF minimizes signal distortion; VF < 0.6 V ensures clamping threshold stays below USB receiver thresholds.

Use Scenario: Providing fast, low-loss path for feedback current in synchronous buck converter optocoupler-isolated loops.

IC Role / Device Role / Timing Role: High-speed switching diode in secondary-side error amplifier output path.

Use Value: Low VF and IR enable stable regulation at light loads; SC−70 footprint fits tight opto-coupler spacing.

Logic-Level Voltage Translation

RF Detector Input Protection

Use Scenario: Level-shifting between 1.8 V and 3.3 V I/O domains in FPGA or microcontroller GPIO banks.

IC Role / Device Role / Timing Role: Bidirectional Schottky diode used in passive translator configuration.

Use Value: VF ≈ 0.36 V at 10 mA allows ~1.4 V headroom for 1.8 V logic, preserving noise margin and timing margins.

Use Scenario: Front-end protection of microwave detector diodes in 2.4 GHz Wi-Fi front-end modules.

IC Role / Device Role / Timing Role: Low-C_T, low-V_F shunt limiter before sensitive detector input.

Use Value: 25 pF max capacitance avoids resonant detuning at 2.4 GHz; 5 μA IR prevents DC offset drift in detector bias path.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
RB520S-30T2R	VF = 0.33 V (IF = 100 mA), IR = 0.1 μA (VR = 30 V), SC−70 package	Lower VR rating (30 V vs. 40 V); tighter IR spec but reduced reverse margin	Preferred where ultra-low leakage dominates over voltage headroom
BAT54C,215	VF = 0.33 V (IF = 10 mA), IR = 2 μA (VR = 30 V), SOT-23 package (larger than SC−70)	Larger footprint; dual-diode configuration adds flexibility but increases board area	Chosen when dual-channel clamping or legacy SOT-23 compatibility required

Compared with RB520S-30T2R and BAT54C,215, the 1SS322(TE85L,F) offers superior reverse voltage margin (40 V) and SC−70 size advantage, making it optimal for compact, medium-voltage signal routing where leakage <5 μA is acceptable.

Availability

1SS322(TE85L,F) is available at Aetrix Electronics and suitable for portable medical sensors, USB interface protection, and low-power DC-DC converter feedback requiring stable component supply across long-lifecycle industrial designs.

Supply support for 1SS322(TE85L,F) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in discrete devices, power ICs, and memory solutions, with global distribution and automotive-grade qualification capabilities.

The 1SS322(TE85L,F) belongs to Toshiba's legacy Schottky diode product line, engineered for high-speed, low-loss signal conditioning in consumer, computing, and industrial electronics since 1988.

FAQ

What is the maximum reverse voltage rating for the 1SS322(TE85L,F)?

The 1SS322(TE85L,F) has a maximum peak reverse voltage (VRM) of 45 V and a continuous reverse voltage (VR) rating of 40 V. These values define the absolute upper limits for safe DC or repetitive pulse blocking without breakdown. Exceeding VR = 40 V risks irreversible damage, and design margins should be applied per Toshiba's derating guidelines in reliability handbooks.

Does the 1SS322(TE85L,F) have a specified reverse recovery time (trr)?

No, the 1SS322(TE85L,F) datasheet does not specify reverse recovery time (trr) because it is a Schottky barrier diode with majority-carrier conduction-no minority-carrier storage delay. Its switching speed is inherently fast, limited only by junction capacitance (CT = 18–25 pF) and circuit inductance, making it suitable for frequencies beyond 100 MHz in clamping and sampling roles.

Is the 1SS322(TE85L,F) RoHS compliant?

Yes, the 1SS322(TE85L,F) meets RoHS Directive 2011/65/EU requirements. Toshiba confirms compliance in its environmental documentation, and the device contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits. Full substance declarations and test reports are available upon request from authorized Toshiba distributors.

What is the thermal resistance (R_θJA) of the 1SS322(TE85L,F) in SC−70 package?

Toshiba does not publish R_θJA for the 1SS322(TE85L,F) in standard datasheets. However, typical SC−70 packages exhibit R_θJA ≈ 300–400°C/W on 1-inch² FR-4 with 2 oz copper. For thermal design, use the absolute maximum junction temperature (T_j = 125°C) and power dissipation limit (P = 100 mW) to calculate allowable ambient rise, and consult Toshiba's application notes for PCB layout recommendations.

Can the 1SS322(TE85L,F) be used as a replacement for the 1N5711 in high-frequency detector circuits?

The 1SS322(TE85L,F) can serve as a functional alternative to the 1N5711 in many high-frequency detector applications due to its lower VF (0.54 V vs. ~0.7 V) and comparable CT (~20 pF vs. ~2 pF). However, the 1N5711 has significantly lower capacitance and is optimized for RF detection; verify signal fidelity at target frequency using actual 1SS322(TE85L,F) measurements before final design-in.

1SS322(TE85L,F) Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: Schottky

Voltage - DC Reverse (Vr) (Max):: 40 V

Current - Average Rectified (Io):: 100mA

Voltage - Forward (Vf) (Max) @ If:: 600 mV @ 100 mA

Speed:: Small Signal =< 200mA (Io), Any Speed

Reverse Recovery Time (trr):: -

Current - Reverse Leakage @ Vr:: 5 µA @ 40 V

Capacitance @ Vr, F:: 18pF @ 0V, 1MHz

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: USM

Operating Temperature - Junction:: 125°C (Max)

1SS322(TE85L,F) FAQ

1.How can I place an order for 1SS322(TE85L,F) through Aetrix?

Please submit a Request for Quotation (RFQ) for 1SS322(TE85L,F) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1SS322(TE85L,F) reliable?

The price and inventory of 1SS322(TE85L,F) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1SS322(TE85L,F) is usually 5 days.

3.What payment methods are accepted for 1SS322(TE85L,F)?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1SS322(TE85L,F) transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1SS322(TE85L,F)?

1SS322(TE85L,F) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1SS322(TE85L,F) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1SS322(TE85L,F)?

For technical support, including 1SS322(TE85L,F) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1SS322(TE85L,F) requirements.

6.How does Aetrix verify that 1SS322(TE85L,F) is sourced from the original manufacturer or authorized distributors?

All 1SS322(TE85L,F) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1SS322(TE85L,F) meets industry standards.

7.What is the process for return or replacement of 1SS322(TE85L,F)?

All 1SS322(TE85L,F) units undergo pre-shipment inspection (PSI). If there is an issue with 1SS322(TE85L,F), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1SS322(TE85L,F) part is unused and in its original packaging.

Return procedure for 1SS322(TE85L,F):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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